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Ricardo Vidrio1, Ryan Need1, Stephen Wilson1
1 Materials Department, University of California, Santa Barbara, CA, USA
Acknowledgements
The Growth of Two Dimensional Transition Metal Dichalcogenides
Transition metal dichalcogenides
are the semiconducting analog to graphene
Crystal growth reactions are carried out
using the chemical vapor transport mechanism
Mass amounts of powder for NbIrTe4 [in mg]
Element Mass with
excess
tellurium
(1:1:4.3)
Mass without
excess
tellurium
(1:1:4)
Mass with
excess
tellurium
(1:1:8)
niobium (Nb) 111.4 116.8 71.1
iridium (Ir) 230.5 241.6 147
tellurium (Te) 658.0 641.6 782
Pressure = 5x10-5mbar
Growth time = 7 days
Temperature: Temperature gradient, THOT=1000°C and TCOLD=900°C
Powder found in ampoules after reaction
is analyzed using x-ray diffraction
This project was partially supported by the LSAMP program of the National Science
Foundation under Award no. DMR-1102531 and by the MRSEC Program of the National
Science Foundation under Award No. DMR- 1121053. I also acknowledge the
contribution that Ryan Need has placed forward on this project. His mentorship and
patience proved invaluable throughout the entire summer. I also want to thank Prof.
Stephen Wilson for allowing me to research in his lab this summer.
The location, height, and shape of the peaks is analyzed
using a process known as Rietveld refinement.
(a) Tellurium crystals
deposited inside of
ampoule vial via
microscope
(b) SEM micrograph of
tellurium crystals
(c) Electrical
measurement of
tellurium crystals
Electrical and chemical analysis of crystals
revealed them to be pure tellurium
SEM micrographs reveal the hexagonal crystal structure of tellurium. The
ratio of diameter/length was found to be dependent on the pressure
present in the ampoule during growth.
Temperature-dependent electrical transport confirmed that our tellurium
crystals did not behave like semiconductors, but instead like semimetals
as previous literature had reported.
Moving forward, growth-from-the-melt
reactions will be attempted
There is no ternary phase diagram available for
this system so it is possible that NbIrTe4 is a
congruently melting phase that could be grown
straight from a melt of the three elements.
Since tellurium melts first (M.P. is 449°C), it was
placed in the bottom of the ampoule so that
niobium (M.P. is 2,469°C) and iridium (M.P. is
2,447°C) sink into liquid and mix properly.
Need to identify parameters that hinder inconsistency:
(1) Determine if cleanliness is an important factor in hindering
inconsistency
(2) Make sure that we set up a proper vacuum and pressure
conditions inside of ampoule
Image source:
http://www.intech
open.com/source/
html/43029/media
/image1.png
Two-dimensional transition metal
dichalcogenides combine a sheet-like
structure with versatile electrical
properties.
M = transition metal
X = chalcogenide
Specifically, we’re attempting to grow
single crystals of ternary dichalcogenides
compounds.
M = transition metal #1
M’ = transition metal #2
X = chalcogenide
These may allow for increased
functionality through cation chemistry
compared to their binary counterparts.
MX2
MM’X4
Raw x-ray data is collected on a powdered sample. An example data
set is shown below in blue.
After refinement, our model matches the data closely, and quantifies
which phases are present in the powder and in what amounts.
One-third of our reactions have produced
high quantities of our desired phase, NbIrTe4
Using bromine and iodine as transport agents, as well as using no
transport agent, has resulted in batches with >70% NbIrTe4.
However, when repeated, none of our batches have produced
repeatable results.
This leads us to believe there is some un-captured variable in our
experiment up to now.

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TMDC Horizontal Poster

  • 1. Ricardo Vidrio1, Ryan Need1, Stephen Wilson1 1 Materials Department, University of California, Santa Barbara, CA, USA Acknowledgements The Growth of Two Dimensional Transition Metal Dichalcogenides Transition metal dichalcogenides are the semiconducting analog to graphene Crystal growth reactions are carried out using the chemical vapor transport mechanism Mass amounts of powder for NbIrTe4 [in mg] Element Mass with excess tellurium (1:1:4.3) Mass without excess tellurium (1:1:4) Mass with excess tellurium (1:1:8) niobium (Nb) 111.4 116.8 71.1 iridium (Ir) 230.5 241.6 147 tellurium (Te) 658.0 641.6 782 Pressure = 5x10-5mbar Growth time = 7 days Temperature: Temperature gradient, THOT=1000°C and TCOLD=900°C Powder found in ampoules after reaction is analyzed using x-ray diffraction This project was partially supported by the LSAMP program of the National Science Foundation under Award no. DMR-1102531 and by the MRSEC Program of the National Science Foundation under Award No. DMR- 1121053. I also acknowledge the contribution that Ryan Need has placed forward on this project. His mentorship and patience proved invaluable throughout the entire summer. I also want to thank Prof. Stephen Wilson for allowing me to research in his lab this summer. The location, height, and shape of the peaks is analyzed using a process known as Rietveld refinement. (a) Tellurium crystals deposited inside of ampoule vial via microscope (b) SEM micrograph of tellurium crystals (c) Electrical measurement of tellurium crystals Electrical and chemical analysis of crystals revealed them to be pure tellurium SEM micrographs reveal the hexagonal crystal structure of tellurium. The ratio of diameter/length was found to be dependent on the pressure present in the ampoule during growth. Temperature-dependent electrical transport confirmed that our tellurium crystals did not behave like semiconductors, but instead like semimetals as previous literature had reported. Moving forward, growth-from-the-melt reactions will be attempted There is no ternary phase diagram available for this system so it is possible that NbIrTe4 is a congruently melting phase that could be grown straight from a melt of the three elements. Since tellurium melts first (M.P. is 449°C), it was placed in the bottom of the ampoule so that niobium (M.P. is 2,469°C) and iridium (M.P. is 2,447°C) sink into liquid and mix properly. Need to identify parameters that hinder inconsistency: (1) Determine if cleanliness is an important factor in hindering inconsistency (2) Make sure that we set up a proper vacuum and pressure conditions inside of ampoule Image source: http://www.intech open.com/source/ html/43029/media /image1.png Two-dimensional transition metal dichalcogenides combine a sheet-like structure with versatile electrical properties. M = transition metal X = chalcogenide Specifically, we’re attempting to grow single crystals of ternary dichalcogenides compounds. M = transition metal #1 M’ = transition metal #2 X = chalcogenide These may allow for increased functionality through cation chemistry compared to their binary counterparts. MX2 MM’X4 Raw x-ray data is collected on a powdered sample. An example data set is shown below in blue. After refinement, our model matches the data closely, and quantifies which phases are present in the powder and in what amounts. One-third of our reactions have produced high quantities of our desired phase, NbIrTe4 Using bromine and iodine as transport agents, as well as using no transport agent, has resulted in batches with >70% NbIrTe4. However, when repeated, none of our batches have produced repeatable results. This leads us to believe there is some un-captured variable in our experiment up to now.