Trends and challenges in vlsi


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Trends & Challenges

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Trends and challenges in vlsi

  1. 1. TRENDS AND CHALLENGES IN VLSI BY: Bhanuteja Labishetty
  2. 2. OVERVIEW Introduction Technology Scaling Challenges in DSM digital design Design challenges of technology Scaling Design challenges of low power Active power management Leakage power management Challenges in VLSI circuit reliability Future direction in microprocessors systems Conclusion
  3. 3. In the last three decades the world of computers andespecially that of microprocessors has been advanced atexponential rates in both productivity and performance. Theintegrated circuit industry has followed a steady path ofconstantly shrinking devices geometries and increasedfunctionality that larger chips provide. The technology thatenabled this exponential growth is a combination ofadvancements in process technology, microarchitecture,architecture and design and development tools.
  4. 4.  Each new generation has approximately doubled logic circuit density and increased performance by about 40% .Moore’s law: In 1965, Gordon Moore noted that the number of transistors on a chipdoubled every 18 to 24 months. He made a prediction that semiconductor technology would double its effectiveness every 18 months Moore’s law continues to drive the scaling of CMOS technology. The feature size of the transistor now has been shrunk well into Nano-scale region. A large single VLSl chip can contain over one billion transistor.
  5. 5.  The ever-increasing level of integration has enabled higher performance and richer feature sets on a single chip. As the geometry of the transistor is getting smaller and the number of transistors on a single chip grows exponentially, the power management for a state-of-the-art VLSI design has become increasingly important. To maintain the performance trend of the vlsi system as the technology scaling continues, many advanced design techniques, especially in power management, have to be employed in order to achieve a balanced design to meet platform and end-user needs.
  6. 6. INTRODUCTION During the past 40 years the semiconductor VLSI IC industry has distinguished itself both by rapid pace of performance improvements in its products, and by a steady path of constantly shrinking device geometries and increasing chip size. The speed and integration density of IC’s have dramatically improved. Exploitation of a billion transistor capacity of a single VLSI IC requires new system paradigms and significant improvements to design productivity. Structural complexity can be increased by having more productive design methods and by putting more resources in design work.
  7. 7.  According to International Technology Roadmap for Semiconductor (IRTS) projections, the number of transistors per chip and the local clock frequencies for high-performance microprocessors will continue to grow exponentially in the next 10 years too.
  8. 8.  The general trends, that we expect in the next ten years, according to ITRS projections concerning:  Increasing of transistor count for microprocessors and DRAM memory elements.  Shrinking of linewidths of IC’s.  Growing chip die sizes and Increasing semiconductor fabrication process complexity
  9. 9. Technology scaling:
  10. 10. CHALLENGES IN DSM DIGITAL DESIGN Microscopic Issue Macroscopic Issue  Ultra high speed design  Time to market  Interconnect  Millions of gates  Noise , Crosstalk  High-Level Abstractions  Reliability, Manufacturability  Reuse & IP: Portability  Power Dissipation  Predictability  Clock distribution  Etc…..
  11. 11.  Exponential growth rates have occurred for other aspects of computer technology such as clock speed and processor performance. Shrinking linewidths not only enables more components to fit onto an IC (typically 2x per linewidth generation) but also lower costs (typically 30% per linewidth generation).
  12. 12.  Shrinking linewidths have slowed down the rate of growth in die size to 1.14x per year versus 1.38 to 1.58x per year for transistor counts, and since the mid-nineties accelerating linewidth shrinks have halted and even reversed the growth in die sizes.
  13. 13.  Shrinking linewidths isn’t free. Linewidth shrinks require process modifications to deal with a variety of issues that come up from shrinking the devices - leading to increasing complexity in the processes being usedDesign Challenges of Technology Scaling: Advances in optical lithography have allowed manufacturing of on - chip structures with increasingly higher resolution. The area, power, and speed characteristics of transistors with a planar structure, such as MOS devices, improve with the decrease (i.e. scaling) in the lateral dimensions of the devices. Therefore, these technologies are referred as scalable
  14. 14. Generally, scalable technology has three main goals:  Reduce gate delay by 30%, resulting in an increase in Operating frequency of about 43%  Double transistor density and  Reduce energy per transition by about 65%, saving 50% of power, at a 43% increase in frequency Scaling a technology reduces gate by 30% and the lateral and vertical dimensions by 30%. Therefore, the area and fringing capacitance, and consequently the total capacitance, decrease by 30% to 0.7 from nominal value normalized to 1. Since the dimensions decrease by 30%, the die area decrease by 50%, and capacitance per unit of area increases by 43%
  15. 15. DESIGN CHALLENGES OF LOW POWER The electronic devices at the heart of such products need to dissipate low power, in order to conserve battery life and meet packaging reliability constraints. Lowering power consumption is important not only for lengthening battery life in portable systems, but also for improving reliability, and reducing heat-removal cost in high-performance systems. Consequently, power consumption is a dramatic problem for all integrated circuits designed today Following figure shows the relative impact on power consumption of each phase of the design process. Essentially higher - level categories have more effect on power reduction.
  16. 16.  Low power design in terms of algorithms, architectures, and circuits has received significant attention and research input over the last decade. Higher System level Design partitioning, Power down Impact Complexity, concurrency, locality, Algorithm level Regularity, Data representation Architecture Voltage Scaling, Parallelism, level Instruction set, Signal correlation Transistor sizing, Logical optimization, Activity driven power Circuit level down, Low swing logic, Adiabatic Switching Process device Threshold Reduction, Multi level Threshold
  17. 17. ACTIVE POWER MANAGEMENT:Reducing Switching Activities: For a high-frequency digital design, the clock power often represents a significant portion of the overall switching power. The clock signals are driving a large number of sequential elements in a synchronized system. The frequency scaling continues to drive up the overall use of the timing elements, including latches and flip-flops. One of the most effective ways to reduce the switching power is through clock gating. By dividing the chip into different clock domains and gating the clock signals with block enable signals, it can greatly reduce the overall chip power.
  18. 18. Dynamic Voltage swing: To ensure a chip provide a high-level of performance while not getting into reliability issues induced by on-die over-heating, an ability to intelligently scale both voltage and frequency dynamically. The power and frequency scaling can be managed through either operating system or can be triggered in flight by many on-die thermal sensors that are positioned strategically across the die The on-die thermal sensor is critical in managing the “hot-spots” where junction temperature could exceed reliability limit if now controlled.
  19. 19. LEAKAGE POWER MANAGEMENTSleep transistor: As transistor geometry gets smaller, the leakage components, including both sub threshold and gate leakage, have become more and more. The leakage power can potentially take up a significant portion of the overall chip power. One of the most effective techniques in reducing the transistor leakage is to introduce sleep transistor between normal circuit block and power supply rails, either or both VCC and VSS. The sleep transistors can be shut off completely during idle state or whenever the blocks are not being accessed.
  20. 20.  When the sleep transistors are turned off, the power supplies at VCC and or VSS across the function block will be collapsing towards the middle. As a result, the voltage difference across the transistor gate as well as source and drain is lowered, which reduces the leakage significantly.Multiple Power Supplies: Since each functional block on a chip often requires different supply voltage in order to achieve optimal power and performance trade off at local level. One effective way to minimize the power consumption is to introduce different power supplies locally.
  21. 21.  When certain circuit blocks are in idle state, a lower power supply can be given to keep the leakage power at minimum. When the circuits are in active state, a higher power supply can be given to provide optimum performance.Frequency Scaling: The figure shows that the voltage level is decreasing due to the scaling of the size of the channel.
  22. 22.  The average number of gate delays in a clock period is decreasing because both the new microarchitectures use shorter pipelines for static gates, and because the advanced circuit techniques reduce the critical path delays even further. This could be the main reason that the frequency is doubled in every technology generation.
  23. 23.  The twofold frequency improvement for each technology generation is primarily due to the following factors  The reduced number of gates employed in a clock period, what makes the design more pipelined.  Advanced circuit design techniques that reduce the average gate delay beyond 30% per generation.
  24. 24. CHALLENGES IN VLSI CIRCUIT RELIABILITY Shrinking geometries, lower power voltages, and higher frequencies have a negative impact on reliability. Together, they increase the number of occurrences of intermittent and transient faults. Faults experienced by semiconductor devices fall into three main categories: permanent, intermittent, and transient.Permanent Faults: Permanent faults reflect irreversible physical changes. Theimprovement of semiconductor design and manufacturing techniques hassignificantly decreased the rate of occurrence of permanent faults.
  25. 25.  The Figure shows the evolution of permanent - fault rates for CMOS microprocessors and static and dynamic memories over the past decade. The semiconductor industry is widely adopting copper interconnects. This trend has a positive impact on permanent - faults rate of occurrence, as copper provides a higher electro migration threshold than aluminium does.
  26. 26. Intermittent Faults Intermittent faults occur because of unstable or marginal hardware;they can be activated by environmental changes, like higher or lowertemperature or voltage. Many times intermittent precede the occurrence ofpermanent faults.Transient faults Transient faults occur because of temporary environmentalconditions. Several phenomena induce transient faults: neutron and alphaparticles; power supply and interconnect noise, electromagneticinterference, and electrostatic discharge.
  27. 27.  Higher VLSI integration and lower supply voltages have contributed to higher occurrence rates for particle - induced transients, also known as soft errors. Following plot measured neutron - and alpha - induced soft errors rates (SERs) for CMOS SRAMs as a function of memory capacity.
  28. 28. FAULT AVOIDANCE AND FAULT TOLERANCE Fault avoidance and fault tolerance are the main approaches used to increase the reliability of VLSI circuits. Fault avoidance relies on improved materials, manufacturing processes, and circuit design. For instance, lower - alpha emission interconnect and packaging materials contribute to low SERs. Silicon on insulator is commonly used process solution for lower circuit sensitivity to particle - induced transients
  29. 29.  Fault tolerance is implementable at the circuit or system level. It relies on concurrent error detection, error recovery, error correction codes (CEDs), and space or time redundancy. Intermittent and transient faults are expected to represent the main source of errors experienced by VLSI circuits. Failure avoidance, based on design technologies and process technologies, would not fully control intermittent and transient faults. Fault - tolerant solutions, presently employed in custom – designed systems, will become widely used in off-the-shelf ICs tomorrow, i.e. in mainstream commercial applications.
  30. 30.  The transient errors we will consider the influences of changes in the supply voltage referred to as power supply noise. Power supply noise adversely affects circuit operation through the following mechanisms: a) signal uncertainty b) on-chip clock jitter c) noise margin degradation and d) degradation of gate oxide reliability. For correct circuit operation the supply levels have to be maintained within a certain range near the nominal voltage levels. This range is called the power noise margin.
  31. 31.  The primary objective in the design of the distribution system is to supply sufficient current to each transistor on an integrated circuit while ensuring that the power noise does not exceed the target noise margins. As an illustration, the evolution of the average current of high- performance Intel family of microprocessors is given in Figure.
  32. 32. FUTURE DIRECTIONS IN MICROPROCESSORSYSTEMS Deep-submicron technology allows billions of transistors on a single die, potentially running at gigahertz frequencies. According to Semiconductor Industry Association projections, the number of transistor per chip and the local clock frequencies for high performance microprocessors will continue to grow exponentially in the near future, as it is illustrated in Figure below. This ensures that future microprocessors will become even more complex.
  33. 33. CONCLUSION As technology scales, important new opportunities emerge for VLSIICs designers. Understanding technology trends and specific applications isthe main criterion for designing efficient and effective chips. There areseveral difficult and exciting challenges facing the design of complex ICs.To continue its phenomenal historical growth and continue to followMoore’s law, the semiconductor industry will require advances on all fronts– from front-end process and lithography to design innovative high-performance processor architectures, and SoC solutions. The roadmap’s goalis to bring experts together in each of these fields to determine what thosechallenges are, and potentially how to solve them.