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1.
International Journal of
Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 11, November (2014), pp. 01-05 © IAEME 1 THREE DIMENSIONAL INTEGRATION OF CMOS INVERTER Dattaprasad Madur1 , Dr. Deepak Bhoir2 , Asst. Prof. Swapnali Makdey3 Department of Electronics, Fr. Conceicao Rodrigues College of Engineering Fr. Agnel Ashram, Bandstand, Bandra (W), Mumbai: 400 050, India ABSTRACT The Performance of a memory device plays a vital role in a computing system. The Processor architecture decides the performance of system. Also the memory device has contribution to the system’s performance. Some aspects related to memory viz. hit, miss, latency, etc. are the key terms which has impact to the system’s performance. Now a day, the advanced processor architecture revolution has become crucial and is ceasing in the improvement of faster fetching, decoding and execution. The New concept of three dimensionally integrated memories tends to give a better performance than the two dimensionally integrated memory. The Approach of 3DI is to stack the multiple dies of a memory which gives shorter interconnections; low resistance and low power consumption, faster passage of control signals and reduction of a die area as compared to the previous integration technology at the cause of increasing the cost and system complexity. Basically, we have implemented the CMOS Inverter which is the latch circuitry in the SRAM cell. We have simulated a 3D integrated CMOS Inverter in 40nm process technology. Keywords: 3DI, CMOS, Memory etc. I. INTRODUCTION Three dimensional integration of a circuit or a complete system brings a new approach in the VLSI stream. The SiP type of 3DI is simple, inexpensive and straight forward. The Other type i.e. Through Silicon Vias (TSV) based 3D integration give more benefits. Some of them are short connection, reduced RC delays, small area etc[2]. 3DI using the TSV is a promising approach to coping with the challenges faced by the current 2D technology. A TSV-based 3D IC is implemented by stacking multiple dies which are vertically connected by TSVs. This may shorten the global interconnects of a 3D IC and greatly improve its performance and power consumption. High bandwidth is achieved by the increase of IO channels provided by the TSVs, which also reduces the unnecessary waste of energy during data movement. INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATION ENGINEERING & TECHNOLOGY (IJECET) ISSN 0976 – 6464(Print) ISSN 0976 – 6472(Online) Volume 5, Issue 11, November (2014), pp. 01-05 © IAEME: http://www.iaeme.com/IJECET.asp Journal Impact Factor (2014): 7.2836 (Calculated by GISI) www.jifactor.com IJECET © I A E M E
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International Journal of
Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 1 A 3D circuit is the stacking of regular 2D circuits. The Advances on the fabricatio packaging technologies allowed interconnecting stacked 2D circuits by using 3D vias. 3DI technology could help to provide tremendous amount of IO bandwidth to the processor with very low energy, using thousands of TSVs between processor and the memor deliver Tera-scale performance, which will demand 100’s of GB/s of memory bandwidth where as a traditional memory subsystem solution will not be sufficient II. DESIGN AND IMPLEMENTATION OF 40nm CMOS INVERTER 2.1 Creating the 3D model As we know the 3D model is the model on the planar surface. Following Figs. explain you this. Fig.1: Layer thicknesses and z in the CMOS process Fig.1. explains you the parameters to be defined in the process file for 3D model i.e. thicknesses of STI, ILD and M1 and also the z respectively whereas Fig.2. Explain International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 6472(Online), Volume 5, Issue 11, November (2014), pp. 01 2 A 3D circuit is the stacking of regular 2D circuits. The Advances on the fabricatio ed interconnecting stacked 2D circuits by using 3D vias. 3DI technology could help to provide tremendous amount of IO bandwidth to the processor with very low energy, using thousands of TSVs between processor and the memory. A 3D integrated memory could scale performance, which will demand 100’s of GB/s of memory bandwidth where as a traditional memory subsystem solution will not be sufficient [2]. DESIGN AND IMPLEMENTATION OF 40nm CMOS INVERTER the 3D model is the introduction of third axis i.e. z-axis in the respective layout . Following Figs. explain you this. Layer thicknesses and z-coordinates Fig.2: 40nm CMOS Inverter Layout CMOS process Fig.3: 3D Inverter the parameters to be defined in the process file for 3D model i.e. thicknesses of STI, ILD and M1 and also the z-coordinates of specific layers (z0, zSTI, Zbottom etc.) Explain the layout design of Inverter. International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 1-05 © IAEME A 3D circuit is the stacking of regular 2D circuits. The Advances on the fabrication and ed interconnecting stacked 2D circuits by using 3D vias. 3DI technology could help to provide tremendous amount of IO bandwidth to the processor with very low y. A 3D integrated memory could scale performance, which will demand 100’s of GB/s of memory bandwidth where as a axis in the respective layout 40nm CMOS Inverter Layout the parameters to be defined in the process file for 3D model i.e. (z0, zSTI, Zbottom etc.)
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International Journal of
Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 1 class CMOS004Params() [ ('lmd', 0.02), ('Tsub',2), ('TBOX',0.03), (‘TSTI’,0.01), ('Tox',3e-3'), ('Tpoly',0.20), ('TTiSi2',0.02), ('TM0',0.2), ('TILD',1), # sub doping ('Nsub', 2e17') # S/D extention doping ('Nsde_n', 2.06338e2'), ('Nsde_p', 2.87375e19')] (a) Definition of all process parameters Table 1 (a) and (b) give process of making a 3D structure respectively. Fig.4: Different views of 3D Inverter (+Z, +X and +Y) 2.2 40nm 3D CMOS Inverter First of all, the optimized layout of inverter has to be drawn. Secondly, write down the process file of particular technology say 40nm. Combine these two, resulting into the 3D model. Fig.3. shows the generated 3D model of 40nm CMOS Inverter. Fig.4. shows the different views of CMOS Inverter Model. International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 6472(Online), Volume 5, Issue 11, November (2014), pp. 01 3 Table 1 class CMOS004Params() ('Nsde_p', 2.87375e19')] self.z0 = 0.0 self.zbottom = self.z0 - Tsub self.zBOX = self.z0 - TSTI - self.zSTI = self.z0 - TSTI self.zpoly = self.z0 + Tpoly self.zTiSi2n = self.z0 + TTiSi2 self.zTiSi2p = self.zGe + TTiSi2 self.zpolyTiSi2 = self.zpoly + TTiSi2 self.zM0t = self.zpoly + TTiSi2 +TM0 self.zM1b = self.z0 + TILD self.zM1t = self.zM1b + TM1 self.zM2b = self.zM1t + TIMD2 self.zM2t = self.zM2b + TM2 self.zmax = self.zM2b + TPass self.Tpad = 0.1*TILD rocess parameters (b) Pseudo Code for 3D structure the details about the definition of the process parameters and the of making a 3D structure respectively. Different views of 3D Inverter (+Z, +X and +Y) First of all, the optimized layout of inverter has to be drawn. Secondly, write down the technology say 40nm. Combine these two, resulting into the 3D model. shows the generated 3D model of 40nm CMOS Inverter. Fig.4. shows the different views of International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 1-05 © IAEME TBOX TTiSi2 self.zTiSi2p = self.zGe + TTiSi2 self.zpolyTiSi2 = self.zpoly + TTiSi2 self.zM0t = self.zpoly + TTiSi2 +TM0 self.zM1t = self.zM1b + TM1 self.zM2b = self.zM1t + TIMD2 self.zM2t = self.zM2b + TM2 ss (b) Pseudo Code for 3D structure details about the definition of the process parameters and the Different views of 3D Inverter (+Z, +X and +Y) First of all, the optimized layout of inverter has to be drawn. Secondly, write down the technology say 40nm. Combine these two, resulting into the 3D model. shows the generated 3D model of 40nm CMOS Inverter. Fig.4. shows the different views of
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International Journal of
Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 11, November (2014), pp. 01-05 © IAEME 4 2.3 Circuit Simulation The Resulting 3D Model is converted into the IC form for further simulation as shown in fig.5. It shows pulse input without delay and the capacitive load at the output with supply voltage of 0.1 volts. Fig.5: Circuit Schematic of CMOS Inverter III. SIMULATION RESULTS Following Figs. Show the transient characteristics and Steady state characteristics for the capacitive load Fig.6: Transient Characteristics Fig.7: Steady state Characteristics Fig.8: Transient Characteristics with delay Fig.9: Static Power Curve
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International Journal of
Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online), Volume 5, Issue 11, November (2014), pp. 01-05 © IAEME 5 Summary of results of CMOS Inverter Parameters Values Lambda 20nm Gate length 40nm Supply Voltage 0.1 volts Threshold Voltage 0.035 volts Chip Area 0.342umଶ Delay in the circuit 0.21nsec Static power 9nWatts Dynamic power 0.25f Watts~0.5nWatts IV. CONCLUSION Thus, this new concept of 3DI brings a new turn in the vlsi systems optimizing the above parameters as compared to previous integrations from 2D to 2.9D. ACKNOWLEDGEMENT The Authors would like to thank Dr. Surendra Rathode from SPIT for the lab provision for the Genius simulator, Mr. Amit Saini from Cadre Design Systems for his valuable support to this work and Mr. Ajay Koli, Fr CRCE for his technical support. REFERENCES [1] Koyanagi et al, “Future System-on-Silicon LSI Chips”, IEEE Micro, July/August 1998. [2] S. Borkar, et al, “3D Integration for Energy Efficient System Design”, DAC June 2011. [3] Yangdong Deng and W.P. Maly. 2.5-dimensional vlsi system integration. Very Large Scale Integration (VLSI) Systems, IEEE Transactions on, 13(6):668–677, June 2005. [4] S. Tarzia, “A Survey of 3D Circuit Integration”, March 14, 2008. [5] G. T. Goele et al., “Vertical Single Gate CMOS Inverters on Laser-Processed Multilayer Substrates,” Proceedings of the IEEE International Electron Device Meetings, Vol. 27, pp. 554-556, December 1981. [6] P. Vasilis, “Interconnect-Based Design Methodologies for Three-Dimensional Integrated Circuits,” PhD report at University of Rochester, New York, 2008. [7] Rajinder Tiwari and R K Singh, “An Optimized High Speed Dual Mode CMOS Differential Amplifier for Analog VLSI applications”, International Journal of Electrical Engineering & Technology (IJEET), Volume 3, Issue 1, 2012, pp. 180 - 187, ISSN Print: 0976-6545, ISSN Online: 0976-6553. [8] P.Sreenivasulu, Krishnna veni, Dr. K.Srinivasa Rao and Dr.A.VinayaBabu, “Low Power Design Techniques of CMOS Digital Circuits”, International Journal of Electronics and Communication Engineering &Technology (IJECET), Volume 3, Issue 2, 2012, pp. 199 - 208, ISSN Print: 0976- 6464, ISSN Online: 0976 –6472.
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