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BIASING AND BIAS STABILITY & 
Temperature 
Stability 
@ 
BByy 
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EECCEE DDEEPPAARRTTMMEENNTT 
MMAAIILL:: eecc22rreeaacchh@@ggmmaaiill..ccoomm 
MMOOBB:: 88990077330055664422
INTRODUCTION 
 The BJT as a circuit element operates various circuits with many major and 
minor modifications. 
 For the analysis of such circuits, we obtain the various conditions for proper 
operation of the device, and also determine the projected range of operation of 
the device. 
 A detailed study of the device in a two-port mode simplifies the circuit analysis 
of the device to a large extent. 
 Thus, we calculate the various parameters of the devices’ performance, 
namely voltage gain, current gain, input impedance, and output impedance. 
 The frequency response of the device is dealt with in detail, and a study of the 
various regions of operation in the frequency scale is also explained. 
 Finally, we will discuss the various configurations of the device and take a look 
into the high-frequency operation of the device and its performance in those 
regions.
BIASING AND BIAS STABILITY 
 Biasing refers to the establishment of suitable dc values of different currents and 
voltages of a transistor. 
 Through proper biasing, a desired quiescent operating point of the transistor 
amplifier in the active region (linear region) of the characteristics is obtained. 
 The selection of a proper quiescent point generally depends on the following factors: 
(a) The amplitude of the signal to be handled by the amplifier and distortion level 
in signal 
(b) The load to which the amplifier is to work for a corresponding supply voltage 
 The operating point of a transistor amplifier shifts mainly with changes in 
temperature, since the transistor parameters — β, ICO and VBE (where the symbols carry 
their usual meaning)—are functions of temperature. 
 Circuit Configurations 
 Fixed-bias circuit 
 Fixed bias with emitter resistance 
 Voltage-divider bias 
 Voltage-feedback biasing
6 
BIAS STABILITY 
 Through proper biasing, a desired quiescent operating point of the transistor 
amplifier in the active region (linear region) of the characteristics is obtained. It is 
desired that once selected the operating point should remain stable. The maintenance 
of operating point stable is called Stabilisation. 
 The selection of a proper quiescent point generally depends on the following factors: 
(a) The amplitude of the signal to be handled by the amplifier and distortion level 
in signal 
(b) The load to which the amplifier is to work for a corresponding supply voltage 
 The operating point of a transistor amplifier shifts mainly with changes in 
temperature, since the transistor parameters — β, ICO and VBE (where the symbols carry 
their usual meaning)—are functions of temperature.
7 
The Thermal Stability of Operating Point (SIco) 
Stability Factor S:- The stability factor S, as the change of collector current 
with respect to the reverse saturation current, keeping β and VBE constant. 
This can be written as: 
The Thermal SSttaabbiilliittyy FFaaccttoorr :: SSIIccoo 
SSIIccoo == ∂∂IIcc 
∂∂IIccoo 
VVbbee,, ββ 
TThhiiss eeqquuaattiioonn ssiiggnniiffiieess tthhaatt IIcc CChhaannggeess SSIIccoo ttiimmeess aass ffaasstt aass IIccoo 
DDiiffffeerreennttiiaattiinngg tthhee eeqquuaattiioonn ooff CCoolllleeccttoorr CCuurrrreenntt IICC == ((11++ββ))IIccoo++ ββIIbb && 
rreeaarrrraannggiinngg tthhee tteerrmmss wwee ccaann wwrriittee 
SSIIccoo ═ 11++ββ 
11-- ββ ((∂∂IIbb//∂∂IICC)) 
IItt mmaayy bbee nnootteedd tthhaatt LLoowweerr iiss tthhee vvaalluuee ooff SSIIccoo bbeetttteerr iiss tthhee ssttaabbiilliittyy
CALCULATION OF STABILITY FACTORS 
 Stability Factor S:- The stability factor S, as the change of collector current with 
respect to the reverse saturation current, keeping β and VBE constant. This can be 
written as: 
Or, 
 Stability Factor S’:- The variation of IC with VBE is given by the stability factor S defined 
by the partial derivative: 
 Stability Factor S″:- The variation of IC with respect to β is represented by the stability 
factor, S'', given as: 
 General Remarks on Collector Current Stability:- The stability factors have been 
defined earlier keeping in mind the change in collector current with respect to changes 
in ICO , VBE and β. These stability factors are repeated here for simplicity.
9 
The Fixed Bias Circuit 
15 V 
C 
E 
B 
15 V 
200 k 1 k 
The Thermal SSttaabbiilliittyy FFaaccttoorr :: SSIIccoo 
SSIIccoo == ∂∂IIcc 
∂∂IIccoo 
VVbbee,, ββ 
GGeenneerraall EEqquuaattiioonn ooff SSIIccoo CCoommeess oouutt ttoo bbee 
SSIIccoo ═ 11 ++ ββ 
11-- ββ ((∂∂IIbb//∂∂IICC)) 
AAppppllyyiinngg KKVVLL tthhrroouugghh BBaassee CCiirrccuuiitt wwee ccaann 
wwrriittee,, IIbb RRbb++ VVbbee== VVcccc 
DDiiffff ww.. rr.. tt.. IICC,, wwee ggeett ((∂∂IIbb // ∂∂IIcc)) == 00 
SSIIccoo== ((11++ββ)) iiss vveerryy llaarrggee 
IInnddiiccaattiinngg hhiigghh uunn--ssttaabbiilliittyy 
RRbb 
IIbb 
RRCC 
RRCC
Merits: 
• It is simple to shift the operating point anywhere in the active region by merely 
10 
changing the base resistor (RB). 
• A very small number of components are required. 
Demerits: 
• The collector current does not remain constant with variation in temperature or 
power supply voltage. Therefore the operating point is unstable. 
• When the transistor is replaced with another one, considerable change in the 
value of β can be expected. Due to this change the operating point will shift. 
• For small-signal transistors (e.g., not power transistors) with relatively high 
values of β (i.e., between 100 and 200), this configuration will be prone to 
thermal runaway. In particular, the stability factor, which is a measure of the 
change in collector current with changes in reverse saturation current, is 
approximately β+1. To ensure absolute stability of the amplifier, a stability factor 
of less than 25 is preferred, and so small-signal transistors have large stability 
factors.
11 
Usage: 
• Due to the above inherent drawbacks, fixed bias is rarely used in linear circuits 
(i.e., those circuits which use the transistor as a current source). Instead, it is often 
used in circuits where transistor is used as a switch. However, one application of 
fixed bias is to achieve crude automatic gain control in the transistor by feeding 
the base resistor from a DC signal derived from the AC output of a later stage.
SMALL-SIGNAL LOW-FREQUENCY 
OPERATION OF TRANSISTORS 
Hybrid Parameters and Two-Port Network 
For the hybrid equivalent model to be described, the parameters are defined at an 
operating point that may or may not give an actual picture of the operating condition 
of the amplifier. The quantities hie , hre , hfe and hoe are called the hybrid parameters and 
are the components of a small-signal equivalent circuit. The description of the hybrid 
equivalent model begins with the general two-port system. 
Two-port system representation (Black model 
realisation)
EQUIVALENT CIRCUITS THROUGH 
HYBRID PARAMETERS 
AS A TWO-PORT NETWORK 
For the transistor, even though it has three basic configurations, they are all four-terminal 
configurations, and thus, the resulting equivalent circuit will have the same 
format. The h-parameter will however change with each configuration. To distinguish 
which parameter has been used or which is available, a second subscript has been 
added to the h-parameter notation. 
(i) For the common-base configuration: the lower case letter b 
(ii) For the common-emitter configuration: the lower case letter e 
(iii) For the common-collector configuration: the lower case letter c 
Complete hybrid equivalent model
Stabilisation

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Stabilisation

  • 1. BIASING AND BIAS STABILITY & Temperature Stability @ BByy AAJJAALL..AA..JJ (( AASSSSIISSTTAANNTT PPRROOFFEESSSSOORR )) EECCEE DDEEPPAARRTTMMEENNTT MMAAIILL:: eecc22rreeaacchh@@ggmmaaiill..ccoomm MMOOBB:: 88990077330055664422
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  • 4. INTRODUCTION  The BJT as a circuit element operates various circuits with many major and minor modifications.  For the analysis of such circuits, we obtain the various conditions for proper operation of the device, and also determine the projected range of operation of the device.  A detailed study of the device in a two-port mode simplifies the circuit analysis of the device to a large extent.  Thus, we calculate the various parameters of the devices’ performance, namely voltage gain, current gain, input impedance, and output impedance.  The frequency response of the device is dealt with in detail, and a study of the various regions of operation in the frequency scale is also explained.  Finally, we will discuss the various configurations of the device and take a look into the high-frequency operation of the device and its performance in those regions.
  • 5. BIASING AND BIAS STABILITY  Biasing refers to the establishment of suitable dc values of different currents and voltages of a transistor.  Through proper biasing, a desired quiescent operating point of the transistor amplifier in the active region (linear region) of the characteristics is obtained.  The selection of a proper quiescent point generally depends on the following factors: (a) The amplitude of the signal to be handled by the amplifier and distortion level in signal (b) The load to which the amplifier is to work for a corresponding supply voltage  The operating point of a transistor amplifier shifts mainly with changes in temperature, since the transistor parameters — β, ICO and VBE (where the symbols carry their usual meaning)—are functions of temperature.  Circuit Configurations  Fixed-bias circuit  Fixed bias with emitter resistance  Voltage-divider bias  Voltage-feedback biasing
  • 6. 6 BIAS STABILITY  Through proper biasing, a desired quiescent operating point of the transistor amplifier in the active region (linear region) of the characteristics is obtained. It is desired that once selected the operating point should remain stable. The maintenance of operating point stable is called Stabilisation.  The selection of a proper quiescent point generally depends on the following factors: (a) The amplitude of the signal to be handled by the amplifier and distortion level in signal (b) The load to which the amplifier is to work for a corresponding supply voltage  The operating point of a transistor amplifier shifts mainly with changes in temperature, since the transistor parameters — β, ICO and VBE (where the symbols carry their usual meaning)—are functions of temperature.
  • 7. 7 The Thermal Stability of Operating Point (SIco) Stability Factor S:- The stability factor S, as the change of collector current with respect to the reverse saturation current, keeping β and VBE constant. This can be written as: The Thermal SSttaabbiilliittyy FFaaccttoorr :: SSIIccoo SSIIccoo == ∂∂IIcc ∂∂IIccoo VVbbee,, ββ TThhiiss eeqquuaattiioonn ssiiggnniiffiieess tthhaatt IIcc CChhaannggeess SSIIccoo ttiimmeess aass ffaasstt aass IIccoo DDiiffffeerreennttiiaattiinngg tthhee eeqquuaattiioonn ooff CCoolllleeccttoorr CCuurrrreenntt IICC == ((11++ββ))IIccoo++ ββIIbb && rreeaarrrraannggiinngg tthhee tteerrmmss wwee ccaann wwrriittee SSIIccoo ═ 11++ββ 11-- ββ ((∂∂IIbb//∂∂IICC)) IItt mmaayy bbee nnootteedd tthhaatt LLoowweerr iiss tthhee vvaalluuee ooff SSIIccoo bbeetttteerr iiss tthhee ssttaabbiilliittyy
  • 8. CALCULATION OF STABILITY FACTORS  Stability Factor S:- The stability factor S, as the change of collector current with respect to the reverse saturation current, keeping β and VBE constant. This can be written as: Or,  Stability Factor S’:- The variation of IC with VBE is given by the stability factor S defined by the partial derivative:  Stability Factor S″:- The variation of IC with respect to β is represented by the stability factor, S'', given as:  General Remarks on Collector Current Stability:- The stability factors have been defined earlier keeping in mind the change in collector current with respect to changes in ICO , VBE and β. These stability factors are repeated here for simplicity.
  • 9. 9 The Fixed Bias Circuit 15 V C E B 15 V 200 k 1 k The Thermal SSttaabbiilliittyy FFaaccttoorr :: SSIIccoo SSIIccoo == ∂∂IIcc ∂∂IIccoo VVbbee,, ββ GGeenneerraall EEqquuaattiioonn ooff SSIIccoo CCoommeess oouutt ttoo bbee SSIIccoo ═ 11 ++ ββ 11-- ββ ((∂∂IIbb//∂∂IICC)) AAppppllyyiinngg KKVVLL tthhrroouugghh BBaassee CCiirrccuuiitt wwee ccaann wwrriittee,, IIbb RRbb++ VVbbee== VVcccc DDiiffff ww.. rr.. tt.. IICC,, wwee ggeett ((∂∂IIbb // ∂∂IIcc)) == 00 SSIIccoo== ((11++ββ)) iiss vveerryy llaarrggee IInnddiiccaattiinngg hhiigghh uunn--ssttaabbiilliittyy RRbb IIbb RRCC RRCC
  • 10. Merits: • It is simple to shift the operating point anywhere in the active region by merely 10 changing the base resistor (RB). • A very small number of components are required. Demerits: • The collector current does not remain constant with variation in temperature or power supply voltage. Therefore the operating point is unstable. • When the transistor is replaced with another one, considerable change in the value of β can be expected. Due to this change the operating point will shift. • For small-signal transistors (e.g., not power transistors) with relatively high values of β (i.e., between 100 and 200), this configuration will be prone to thermal runaway. In particular, the stability factor, which is a measure of the change in collector current with changes in reverse saturation current, is approximately β+1. To ensure absolute stability of the amplifier, a stability factor of less than 25 is preferred, and so small-signal transistors have large stability factors.
  • 11. 11 Usage: • Due to the above inherent drawbacks, fixed bias is rarely used in linear circuits (i.e., those circuits which use the transistor as a current source). Instead, it is often used in circuits where transistor is used as a switch. However, one application of fixed bias is to achieve crude automatic gain control in the transistor by feeding the base resistor from a DC signal derived from the AC output of a later stage.
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  • 30. SMALL-SIGNAL LOW-FREQUENCY OPERATION OF TRANSISTORS Hybrid Parameters and Two-Port Network For the hybrid equivalent model to be described, the parameters are defined at an operating point that may or may not give an actual picture of the operating condition of the amplifier. The quantities hie , hre , hfe and hoe are called the hybrid parameters and are the components of a small-signal equivalent circuit. The description of the hybrid equivalent model begins with the general two-port system. Two-port system representation (Black model realisation)
  • 31. EQUIVALENT CIRCUITS THROUGH HYBRID PARAMETERS AS A TWO-PORT NETWORK For the transistor, even though it has three basic configurations, they are all four-terminal configurations, and thus, the resulting equivalent circuit will have the same format. The h-parameter will however change with each configuration. To distinguish which parameter has been used or which is available, a second subscript has been added to the h-parameter notation. (i) For the common-base configuration: the lower case letter b (ii) For the common-emitter configuration: the lower case letter e (iii) For the common-collector configuration: the lower case letter c Complete hybrid equivalent model