This document discusses different techniques for integrating MEMS (Micro-Electro-Mechanical Systems) into a standard BiCMOS semiconductor fabrication process. It describes a Back-End-Of-Line integration technique that uses the metallization layers of a BiCMOS process along with additional MEMS processing steps. A back-side substrate etching technique is also discussed for preventing substrate losses in passive components. Fully embedding these MEMS integration methods could allow single-chip mm-wave transceivers to be realized using cost-effective standard silicon processes operating at higher frequencies with lower losses.