The document is a device modeling report for the diode model 1SR139-600 manufactured by Rohm, detailing its specifications and simulation results. It includes key electrical parameters, circuit simulation characteristics, forward current behavior, capacitance characteristics, and reverse recovery attributes with compared measurement errors. The report emphasizes simulation accuracy and provides copyright information for Bee Technologies Inc.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER / STANDARD
PART NUMBER: 1SR139-600
MANUFACTURER: ROHM
REMARK: TC=80C
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

2. SPICE MODEL
*$
* PART NUMBER: 1SR139-600
* MANUFACTURER: ROHM
* VRM=600,TC=80C,IO=1A,IFSM=40A
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
.MODEL D1SR139-600_80C D
+ IS=33.407E-9
+ N=1.9062
+ RS=38.385E-3
+ IKF=13.233
+ ISR=0
+ CJO=23.217E-12
+ M=.38318
+ VJ=.3905
+ BV=600
+ IBV=10.000E-6
+ TT=7.7166E-6
*$
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

3. Forward Current Characteristic Reference
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

4. Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
V1
0Vdc D1
1SR139-600_80C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.01 0.620 0.622 -0.32
0.02 0.660 0.656 0.61
0.05 0.700 0.703 -0.43
0.1 0.742 0.738 0.54
0.2 0.778 0.777 0.13
0.5 0.832 0.834 -0.24
1 0.890 0.888 0.22
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

6. Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
V2
0Vdc
V2 = 600V V1
V1 = 0 D1
TD = 0
TR = 1us
TF = 10ns
PW = 5us
PER = 10us 1SR139-600_80C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF) Cj(pF)
Vrev(V) %Error
Measurement Simulation
0 23.445 23.445 0.00
0.1 21.279 22.000 -3.39
0.2 19.775 19.924 -0.75
0.5 16.688 16.954 -1.59
1 14.106 14.313 -1.47
2 11.560 11.632 -0.62
5 8.596 8.467 1.50
10 6.727 6.621 1.58
20 5.187 5.101 1.66
50 3.635 3.604 0.85
100 2.778 2.765 0.47
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

8. Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
50
V2 = 10.8V V1
V1 = -9.2V D1
TD = 0
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us 1SR139-600_80C
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trr 5.12 us 5.11 us 0.195
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

9. Reverse Recovery Characteristic Reference
Measurement
Trj =2.04(us)
Trb=3.08(us)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004