The document presents a device modeling report for the HFA08TB60 diode, including specifications and parameters such as saturation current, series resistance, and junction potential. It includes simulation results for forward current, capacitance characteristics, and reverse recovery characteristics, comparing measured values with simulated data and displaying percentage errors. The document is comprehensive in detailing circuit simulations and characteristic evaluations relevant to the diode.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER / PROFESSIONAL
PART NUMBER: HFA08TB60
MANUFACTURER: INTERNATIONAL RECTIFIER
REMARK: TC=25C
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

3. Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc
DHFA08TB60_25C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

4. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.05 0.606 0.615 -1.485
0.1 0.666 0.680 -2.102
0.2 0.740 0.756 -2.162
0.5 0.874 0.872 0.229
1 0.998 0.979 1.904
2 1.144 1.120 2.098
5 1.406 1.418 -0.853
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Forward Current Characteristic Reference
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
V2
0Vdc
V2 = 600V V1
V1 = 0 U1
TD = 0
TR = 1us DHFA08TB60_25C
TF = 10ns
PW = 5us
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF) Cj(pF)
Vrev(V) %Error
Measurement Simulation
0 123.158 123.158 0.000
0.1 114.125 113.973 0.133
0.2 105.148 105.416 -0.255
0.5 87.761 88.182 -0.480
1 72.339 72.535 -0.271
2 56.576 57.034 -0.810
5 38.891 39.396 -1.299
10 28.973 29.260 -0.991
20 21.551 21.443 0.501
50 14.649 14.159 3.345
100 11.026 10.563 4.199
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
50
V2 = 10.8V V1
V1 = -9.37V U1
TD = 0
TR = 10ns DHFA08TB60_25C
TF = 10ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj 16.40 ns 16.00 ns - 2.439
trb 38.80 ns 38.65 ns - 0.386
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

9. Reverse Recovery Characteristic Reference
Measurement
Trj =16.4 (ns)
Trb=38.8 (ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005