This document summarizes the modeling of a general purpose rectifier diode with part number S3L60. It includes the diode components, manufacturer, and PSpice model parameters. Graphs show the diode's forward and reverse characteristics, capacitance behavior, and reverse recovery performance as measured and simulated in a circuit. The simulation results match the measurement data closely, validating the accuracy of the diode model.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: S3L60
MANUFACTURER: SHINDENGEN
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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2. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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3. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
0V 0.4V 0.8V 1.2V 1.6V 2.0V 2.4V 2.8V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc D1
DS3L60
0
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4. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 0.732 0.727 -0.69
0.2 0.825 0.826 0.12
0.5 0.968 0.975 0.72
1 1.117 1.114 -0.30
2 1.294 1.293 -0.11
5 1.621 1.622 0.08
10 1.985 1.985 -0.02
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5. Capacitance Characteristic
Circuit Simulation Result
200p
100p
10p
2.0p
500mV 1.0V 10V 100V
I(V2)/(600V/1u)
V(N11503)
Evaluation Circuit
V2
0Vdc
V1 = 0 V1
V2 = 600V D1
TD = 0 DS3L60
TR = 1u
TF = 50ns
PW = 5us
PER = 10us
0
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6. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj (pF)
Vrev (V) %Error
Measurement Simulation
0.5 91.820 94.506 2.93
1 78.510 79.309 1.02
2 63.500 64.459 1.51
5 46.100 46.117 0.04
10 33.900 34.803 2.66
20 25.140 25.931 3.15
50 16.800 17.485 4.08
100 12.500 12.958 3.66
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7. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.96us 20.00us 20.04us 20.08us 20.12us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.1V
V2 = 10.8V
TD = 12ns V1
TR = 10ns D1
TF = 12ns DS3L60
PER = 50us
PW = 20us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 18.00 17.59 -2.29
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8. Reverse Recovery Characteristic Reference
Measurement
Trj =18.00(ns)
Trb= 16.00(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
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