Question Bank Basic Electronics

Question Bank - Basic Electronics
Prof. Nilesh Bhaskarrao Bahadure
Ph.D.
July 25, 2021
University Question Bank + Additional
Objective Questions - 1 to 153, Short Questions - 1 to 75, Long Questions - 1
to 28
Total = 256 Questions
1 Objective Question
1. Knee voltage of germanium diode is . . .
(a) 0.3v
(b) 0.7v
(c) 1v
(d) 0v
2. Color coding for given resistor is ”Blue-red-orange”, then its value is . . . . . .
(a) 62 kilo ohm
(b) 6.2 kilo ohm
(c) 6.2 meter ohm
(d) 6200 ohm
3. Diode is . . . . . . a device.
(a) a non linear
(b) a linear
(c) an amplifying
(d) none of the above
4. To display digit 9 in a seven segment display.
(a) “A” segment off
(b) “B” segment off
(c) “E” segment off
(d) All segments on
5. The base of transistor is . . . . . . doped.
1

(a) Heavily
(b) Moderately
(c) Lightly
(d) Either lightly or heavily
6. The phase difference between the input and output voltages of a transistor connected in
common collector arrangement is
(a) 180o
(b) 0o
(c) 90o
(d) 270o
7. The smallest possible ripple factor we get in case of
(a) Half wave rectifier
(b) Full wave bridge rectifier
(c) Center tap full wave rectifier with capac-
itor filter
(d) None of the above
8. Which of the following is active transducer
(a) Thermocouple
(b) Linear Variable Differential Transformer
(c) Reluctance pickup
(d) Load cell
9. (A+B)’ = . . . . . .
(a) A’.B’
(b) A’ + B’
(c) A’ - B’
(d) None of these
10. (49.25)10 = (?)2
(a) 11001.10
(b) 110001.10
(c) 110000.01
(d) 110001.01
11. In Bridge Rectifier, if input voltage is Vm sin ωt then PIV across any diode will be
(a) 2Vm
(b) Vm
(c) Vm
√
2
(d) Vm
2
12. The Boolean expression A + AB is equal to
(a) A + B
(b) A + B
(c) A
(d) both (a) and (b)
13. The . . . . . . gauge operates on the principle of photo resistivity.
(a) bounded
(b) unbounded
(c) semiconductor
(d) both (a) and (b)
14. The logic gate giving output high when both inputs are low is
(a) OR
(b) NAND
(c) AND
(d) None of these
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15. (1110)2 − (1101)2 =
(a) 1001
(b) 0110
(c) 0001
(d) 1000
16. The value of capacitance is independent of
(a) area of plate
(b) dielectric constant
(c) mass of plate
(d) distance between plates
17. . . . . . . can be used in camera for determining light intensity.
(a) LED
(b) Diode
(c) Transistor
(d) LDR
18. The material used for LED is
(a) GaAs
(b) CdSe
(c) Pbs
(d) Cds
19. Thermocouple is a . . . . . . transducer and used for measurement of
(a) Passive, temperature
(b) Active, light sensitivity
(c) Active, displacement
(d) Active, temperature
20. In bridge rectifier, PIV across any diode will be
(a) 2Vm
(b) Vm
(c) Vm
√
2
(d) Vm
2
21. To display the digit 7 in seven segment display then
(a) segments a, b and c should be turned on and all other segments should be off
(b) segments a, b and c should be off and all other segments should be turned on
(c) segments a, f and e should be turned on and all other segments should be off
(d) segments a, f and e should be off and all other segments should be turned on
22. See back effect is observed in
(a) LVDT
(b) Strain gauge
(c) RTD
(d) Thermocouple
23. Thermistor and LDR are type of . . . . . . resistors.
(a) fixed
(b) variables
(c) non linear
(d) linear
24. The Boolean expression (A + AB) (A + A) is equal to
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(a) A
(b) A(A + B)
(c) A + B
(d) all above
25. LVDT has primary winding and . . . . . . secondary winding.
(a) one, two
(b) two, one
(c) one, one
(d) two, two
26. The terminal taken out from p-type of layer in p-n junction diode is called
(a) cathode
(b) anode
(c) emitter
(d) base
27. Colour bands on resistor are brown, black black, gold its value is
(a) 10 5%
(b) 10 10%
(c) 100 5%
(d) 100 10%
28. Solar cell is a . . . . . . transducer.
(a) active
(b) passive
(c) resistive
(d) inductive
29. 1’s compliment of 0101 is
(a) 1010
(b) 1011
(c) 1111
(d) 0000
30. Example of electro-mechanical switch is
(a) toggle switch
(b) band switch
(c) push button switch
(d) relay
31. Zener diode can be used as
(a) regulator
(b) filter
(c) amplifier
(d) oscillator
32. Ripple factor of full wave rectifier without filter is
(a) 0.2
(b) 0.48
(c) 0.24
(d) 1.21
33. Thermocouple is . . . . . . transducer and used for measurement of . . . . . .
(a) Passive, temperature
(b) Active, light sensitivity
(c) Active, displacement
(d) Active, temperature
34. A photo diode is an example of light
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(a) Source
(b) Detector
(c) Coupler
(d) Isolator
35. 2’s complement of a number 1010101 is . . . . . .
(a) 0101010
(b) 0101011
(c) 1101010
(d) 01010111
36. Semiconductor material used for LED is
(a) Silicon
(b) Gallium Bromide
(c) Gallium Arsenide
(d) None of these
37. . . . . . . is an active transducer.
(a) Thermocouple
(b) Strain gauge
(c) LVDT
(d) None of these
End of University Question Bank
38. One eV is equal to . . . . . . J.
(a) 6.02 × 1023
(b) 1.6 × 10−19
(c) 6.25 × 1018
(d) 1.66 × 10−24
39. The diode . . . . . ..
(a) is the simplest of semiconductor devices
(b) has characteristics that closely match those of a simple switch
(c) is a two-terminal device
(d) All of the above
40. What does a high resistance reading in both forward- and reverse-bias directions indicate?
(a) A good diode
(b) An open diode
(c) A shorted diode
(d) A defective ohmmeter
41. What is the state of an ideal diode in the region of nonconduction?
(a) An open circuit
(b) A short circuit
(c) Unpredictable
(d) Undefined
42. What unit is used to represent the level of a diode forward current IF?
(a) pA
(b) nA
(c) A
(d) mA
43. The diffused impurities with . . . . . . valence electrons are called donor atoms.
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(a) 4
(b) 3
(c) 5
(d) 0
44. What is the range of the operating voltage level for LED’s?
(a) 5-12 mV
(b) 1.7-3.3 V
(c) 5-12 V
(d) 20-25 V
45. What is the resistor value of an ideal diode in the region of conduction?
(a) 0
(b) 5KΩ
(c) Undefined
(d) Infinity
46. In what state is a silicon diode if the voltage drop across it is about 0.7 V?
(a) No bias
(b) Forward bias
(c) Reverse bias
(d) Zener region
47. The leakage current in a crystal diode is due to . . . . . ..
(a) minority carriers
(b) majority carriers
(c) junction capacitance
48. If the temperature of a crystal diode increases, then leakage current . . . . . ..
(a) remains the same
(b) decreases
(c) increases
(d) becomes zero
49. If the doping level of a crystal diode is increased, the breakdown voltage. . . . . ..
(b) is increased
(c) is decreased
50. The knee voltage of a crystal diode is approximately equal to . . . . . ..
(a) applied voltage
(b) breakdown voltage
(c) forward voltage
(d) barrier potential
51. A diode is a . . . . . . device
(a) non-linear
(b) bilateral
(c) linear
52. If the doping level in a crystal diode is increased, the width of depletion layer. . . . . ..
(b) is decreased
(c) in increased
53. A zener diode is used as . . . . . .
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(a) an amplifier
(b) a voltage regulator
(c) a rectifier
(d) a multivibrator
54. The doping level in a zener diode is . . . . . . that of a crystal diode
(a) the same as
(b) less than
(c) more than
55. A zener diode is always . . . . . . connected in
(a) reverse
(b) forward
(c) either reverse or forward
56. A zener diode utilizes . . . . . . characteristics for its operation.
(a) forward
(b) reverse
(c) both forward and reverse
57. In the breakdown region, a zener didoe behaves like a . . . . . . source.
(a) constant voltage
(b) constant current
(c) constant resistance
58. A zener diode is destroyed if it. . . . . .
(a) is forward biased
(b) is reverse biased
(c) carrier more than rated current
59. A zener diode is . . . . . . device
(a) a non-linear
(b) a linear
(c) an amplifying
60. The disadvantage of a half-wave rectifier is that the. . . . . .
(a) components are expensive
(b) diodes must have a higher power rating
(c) output is difficult to filter
61. If the input to a half-wave rectifier is an r.m.s value of 400
√
2
volts, then diode PIV rating
is. . . . . .
(a) 400
√
2
(b) 400 V
(c) 400 ×
√
2
62. The ripple factor of a half-wave rectifier is. . . . . .
(a) 2
(b) 1.21
(c) 2.5
(d) 0.48
63. The PIV rating of each diode in a bridge rectifier is . . . . . . that of the equivalent centre-tap
rectifier
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(a) one-half
(b) the same as
(c) twice
(d) four times
64. For the same secondary voltage, the output voltage from a centre-tap rectifier is . . . . . .
than that of bridge rectifier
(a) twice
(b) thrice
(c) four time
(d) one-half
65. If the PIV rating of a diode is exceeded, . . . . . .
(a) the diode conducts poorly
(b) the diode is destroyed
(c) the diode behaves like a zener diode
66. A half-wave rectifier has an input voltage of 240 V r.m.s. If the step-down transformer
has a turns ratio of 8:1, what is the peak load voltage? Ignore diode drop.
(a) 27.5 V
(b) 86.5 V
(c) 30 V
(d) 42.5 V
67. The maximum efficiency of a half-wave rectifier is . . . . . .
(a) 40.6 %
(b) 81.2 %
(c) 50 %
(d) 25 %
68. The most widely used rectifier is . . . . . .
(a) half-wave rectifier
(b) centre-tap full-wave rectifier
(c) bridge full-wave rectifier
69. The arrow direction in the diode symbol indicates
(a) Direction of electron flow.
(b) Direction of hole flow (Direction of conventional current)
(c) Opposite to the direction of hole flow
70. When the diode is forward biased, it is equivalent to
(a) An off switch
(b) An On switch
(c) A high resistance
71. Under normal reverse bias voltage applied to diode, the reverse current in Si diode
(a) 100mA
(b) order of µA
(c) 1000µA
(d) None of these
72. Avalanche breakdown in a diode occurs when
(a) Potential barrier is reduced to zero.
(b) Forward current exceeds certain value.
(c) Reverse bias exceeds a certain value.
(d) None of these
73. Reverse saturation current in a Silicon PN junction diode nearly doubles for very
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(a) 2 degree rise in temp.
(b) 5 degree rise in temp.
(c) 6 degree rise in temp.
(d) 10 degree rise in temp.
74. A forward potential of 10V is applied to a Si diode. A resistance of 1KΩ is also in series
with the diode. The current is
(a) 10 mA
(b) 9.3 mA
(c) 0.7 mA
(d) 0
75. When a reverse bias is applied to a diode, it will
(a) Raise the potential barrier
(b) Lower the potential barrier
(c) Increases the majority-carrier a current greatly
(d) None of these
76. The number of depletion layers in a transistor is . . . . . .
(a) four
(b) three
(c) one
(d) two
77. The base of a transistor is . . . . . . doped
(a) heavily
(b) moderately
(c) lightly
78. The element that has the biggest size in a transistor is . . . . . .
(a) collector
(b) base
(c) emitter
(d) collector-base-junction
79. In a PNP transistor, the current carriers are . . . . . .
(a) acceptor ions
(b) donor ions
(c) free electrons
(d) holes
80. The collector of a transistor is . . . . . . doped
(a) heavily
(b) moderately
(c) lightly
81. A transistor is a . . . . . . operated device
(a) current
(b) voltage
(c) both voltage and current
82. In a NPN transistor, . . . . . . are the minority carriers
(a) free electrons
(b) holes
(c) donor ions
(d) acceptor ions
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83. The emitter of a transistor is . . . . . . doped
(a) lightly
(b) heavily
(c) moderately
84. In a transistor, the base current is about . . . . . . of emitter current
(a) 25%
(b) 20%
(c) 35 %
(d) 5%
85. At the base-emitter junctions of a transistor, one finds . . . . . .
(a) a reverse bias
(b) a wide depletion layer
(c) low resistance
86. The input impedance of a transistor is . . . . . .
(a) high
(b) low
(c) very high
(d) almost zero
87. Most of the majority carriers from the emitter . . . . . .
(a) recombine in the base
(b) recombine in the emitter
(c) pass through the base region to the collector
88. The current IB is . . . . . .
(a) electron current
(b) hole current
(c) donor ion current
(d) acceptor ion current
89. In a transistor . . . . . .
(a) IC = IE + IB
(b) IB = IC + IE
(c) IE = IC IB
(d) IE = IC + IB
90. The value of α of a transistor is . . . . . .
(a) more than 1
(b) less than 1
(c) 1
91. The output impedance of a transistor is . . . . . .
(a) high
(b) zero
(c) low
(d) very low
92. The value of β for a transistor is generally . . . . . .
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(a) 1
(b) less than 1
(c) between 20 and 500
(d) above 500
93. The most commonly used transistor arrangement is . . . . . . arrangement
(a) common emitter
(b) common base
(c) common collector
94. The phase difference between the input and output voltages in a common base arrangement
is . . . . . .
(a) 180o
(b) 90o
(c) 270o
(d) 0o
95. The power gain in a transistor connected in . . . . . . arrangement is the highest
(a) common emitter
(b) common base
(c) common collector
common emitter arrangement is . . . . . .
(a) 0o
(b) 90o
(c) 270o
(d) 180o
97. The voltage gain in a transistor connected in . . . . . . arrangement is the highest
(a) common base
(b) common collector
(c) common emitter
98. As the temperature of a transistor goes up, the base-emitter resistance . . . . . .
(a) decreases
(b) increases
(c) remains the same
99. The voltage gain of a transistor connected in common collector arrangement is . . . . . .
(a) equal to 1
(b) more than 10
(c) more than 100
(d) less than 1
common collector arrangement is . . . . . .
(a) 180o
(b) 90o
(c) 270o
(d) 0o
101. In a transistor, signal is transferred from a . . . . . . circuit
(a) high resistance to low resistance
(b) low resistance to high resistance
(c) high resistance to high resistance
(d) low resistance to low resistance
102. The leakage current in CE arrangement is . . . . . . that in CB arrangement
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(a) more than
(b) less than
(c) the same as
103. The collector-base junction in a transistor has . . . . . ..
(a) forward bias at all times
(b) reverse bias at all times
(c) low resistance
104. When transistors are used in digital circuits they usually operate in the:
(a) active region
(b) breakdown region
(c) saturation and cutoff regions
(d) linear region
105. To operate properly, a transistor’s base-emitter junction must be forward biased with
reverse bias applied to which junction?
(a) collector-emitter
(b) base-collector
(c) base-emitter
(d) collector-base
106. A transistor may be used as a switching device or as a:
(a) fixed resistor
(b) tuning device
(c) rectifier
(d) variable resistor
107. Which is beta’s current ratio?
(a) IC/IB
(b) IC/IE
(c) IB/IE
(d) IE/IB
108. If a 2 mV signal produces a 2 V output, what is the voltage gain?
(a) 0.001
(b) 0.004
(c) 100
(d) 1000
109. In a transistor, collector current is controlled by:
(a) collector voltage
(b) base current
(c) collector resistance
(d) all of the above
110. Process of linearly increasing amplitude of an electrical signal is called
(a) switching
(b) amplification
(c) multiplexing
(d) fabrication
111. Switch is open when transistor is in
(a) cutoff region
(b) linear region
(c) saturation region
(d) breakdown region
112. In cutoff region, transistor behaves like open switch between
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(a) collector and base
(b) base and emitter
(c) collector and emitter
(d) base and ground
113. When VCE exceeds 0.7V, transistor goes into a
(a) linear region
(b) diode region
(c) cutoff region
(d) saturation region
114. Switch is closed when transistor is in
(a) cutoff region
(b) linear region
(c) saturation region
(d) breakdown region
115. Function of transducer is to convert
(a) Electrical signal into non electrical quantity
(b) Non electrical quantity into electrical signal
(c) Electrical signal into mechanical quantity
(d) All of these
116. Potentiometer transducers are used for the measurement of
(a) Pressure
(b) Displacement
(c) Humidity
(d) Both (a) and (b)
117. Thermistor is a transducer. Its temperature coefficient is
(a) Negative
(b) Positive
(c) Zero
(d) None of these
118. Strain gauge is a
(a) Active device and converts mechanical displacement into a change of resistance
(b) Passive device and converts electrical displacement into a change of resistance
(c) Passive device and converts mechanical displacement into a change of
resistance
(d) Active device and converts electrical displacement into a change of resistance
119. The linear variable differential transformer transducer is
(a) Inductive transducer
(b) Non-inductive transducer
(c) Capacitive transducer
(d) Resistive transducer
120. The transducer used for the measurements is/are
(a) Resistance temperature detectors
(b) Thermistors
(c) Ultrasonic
(d) All of these
121. If at one end, the two wires made of different metals are joined together then a voltage
will get produced between the two wires due to difference of temp between the two ends
of wires. This effect is observed in
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(a) Thermocouples
(b) Thermistors
(c) RTD
(d) Ultrasonics
122. For the measurement of pressure the instruments used can be
(a) Mechanical
(b) Electro-mechanical
(c) Electronic
(d) All of these
123. With the increase in the intensity of light, the resistance of a photovoltaic cell
(a) Increases
(b) Decreases
(c) Remains same
(d) None of these
124. If the displacement is measured with strain gauge then the number of strain gauge normally
required are
(a) One
(b) Two
(c) Three
(d) Four
125. Which of the following is not a characteristic of ideal transducer?
(a) High dynamic range
(b) Low linearity
(c) High repeatability
(d) Low noise
126. A transducer converting ground movement or velocity to voltage is known as . . . . . .
(a) Geophone
(b) Pickup
(c) Hydrophone
(d) Sonar transponder
127. Which of following represent active transducer?
(a) Strain gauge
(b) Thermistor
(c) LVDT
(d) Thermocouple
128. Which transducer is known as ’self-generating transducer’?
(a) Active transducer
(b) Passive transducer
(c) Secondary transducer
(d) Analog transducer
129. What is the relation between scale factor and sensitivity of a transducer?
(a) Scale factor is double of sensitivity
(b) Scale factor is inverse of sensitivity
(c) Sensitivity is inverse of scale factor
(d) Sensitivity is equal to scale factor
130. Which of the following is an analog transducer?
(a) Encoders
(b) Strain gauge
(c) Digital tachometers
(d) Limit switches
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131. What is the principle of operation of LVDT?
(a) Mutual inductance
(b) Self-inductance
(c) Permanence
(d) Reluctance
132. Which of the following can be measured using Piezo-electric transducer?
(a) Velocity
(b) Displacement
(c) Force
(d) Sound
133. With the increase in the intensity of light, the resistance of a photovoltaic cell
(a) Increases
(b) Decreases
(c) Remains same
(d) None of these
134. Which of the following is a digital device
(a) Regulator of a fan
(b) Microphone
(c) Resistance of a material
(d) Light switch
135. A Binary number system has how many digits.
(a) 0
(b) 1
(c) 2
(d) 10
136. Temperature variation is a/an
(a) Digital quantity
(b) Analog quantity
(c) Either Digital or Analog quantity
(d) None
137. In decimal number system what is MSD
(a) First digit from left to right
(b) First digit from right to left
(c) Middle digit
(d) Mean of all digits
138. 1 Kilo bits are equal to
(a) 1000 bits
(b) 1024 bits
(c) 1012 bits
(d) 1008 bits
139. A Nibble is equal to . . . . . . bit(s)
(a) 1
(b) 2
(c) 4
(d) 8
140. The output of an AND gate is LOW . . . . . .
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(a) all the time
(b) when any input is LOW
(c) when any input is HIGH
(d) when all inputs are HIGH
141. Give the decimal value of binary 10010.
(a) 610
(b) 910
(c) 1810
(d) 2010
142. In Boolean algebra A.A is equal to
(a) A
(b) A2
(c) 2A
(d) 1
143. X + X.Y =?
(a) 1
(b) 0
(c) X
(d) Y
144. Maximum number in decimal that can be represented by 4 bits (binary) is
(a) 4
(b) 7
(c) 15
(d) 16
145. 1’s Complement of 11001010 is
(a) 11001011
(b) 11001001
(c) 00110101
(d) 00110111
146. 2’s Complement of 10101011 is
(a) 01010101
(b) 00111100
(c) 10101011
(d) 10101100
147. Convert the fractional binary number 0000.1010 to decimal.
(a) 0.625
(b) 0.50
(c) 0.55
(d) 0.10
148. How many output is high of NOR GATE?
(a) 2
(b) 4
(c) 1
(d) 3
149. The inputs of a NAND gate are connected together. The resulting circuit is . . . . . .
(a) OR gate
(b) AND gate
(c) NOT gate
150. Digital circuit can be made by the repeated use of . . . . . .
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(a) OR gates
(b) NOT gates
(c) NAND gates
151. Any Gate is having how many output
(a) One or more
(b) Two or more
(c) One
(d) Zero or more
152. If a 3-input NOR gate has eight input possibilities, how many of those possibilities will
result in a HIGH output?
(a) 1
(b) 2
(c) 7
(d) 8
153. What does the small bubble on the output of the NAND gate logic symbol mean?
(a) open collector output
(b) tristate
(c) The output is inverted
Active transducers are self-generating type, they dont require external power to work while passive
transducers require external power to work.
2 Short Questions
1. With the help of neat circuit diagram and waveforms, explain full wave bridge rectifier in
detail.
2. Compare LED with LCD display.
3. Perform the following subtraction using 2’s complement method.
(a) (23)10 − (48)10
(b) (48)10 − (−23)10
4. Define the following terms with respect to transducers.
(a) Transducer
(b) Linearity
(c) Accuracy
5. Explain On Off, SPST and DPDT type of switches in detail.
6. Draw and explain input and output characteristics of common emitter amplifier.
7. Explain working of transistor as an amplifier.
8. Explain different types of capacitors.
9. Explain bonded and unbounded strain gauge with neat diagram.
10. Explain in detail working of photo diode.
11. Convert the following numbers to octal, binary (BCA)H, (1FA)H.
12. Explain full wave center tapped rectifier with capacitive filter.
13. State and prove the Demorgan’s theorem.
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14. Draw and explain seven segment common cathode LED display.
15. Explain selection parameters of transducer.
16. Explain basic construction of electrolytic capacitor with suitable diagram.
17. Describe principle of operation and construction of LDR with neat diagram.
18. Draw and explain transistor as an amplifier.
19. Explain photo-electric pickup in detail.
20. Explain relay (electromechanical switch).
21. Draw and explain construction of aluminum electrolytic capacitor.
22. Draw and explain half wave rectifier with suitable waveforms.
23. Explain input output characteristics of common emitter configuration.
24. State and prove De Morgan’s theorem.
25. Write types of transducers and explain any one in detail.
26. Convert the following numbers into octal, binary : (DEF.BFA)16, (72E.CD)16.
27. What is the need of filter? Explain capacitor filter. Write expression for ripple factor.
28. Explain with diagram types of inductor.
29. Define forward and reverse voltage
30. What are the characteristics of active and passive components?
31. List different types of active and passive components
32. Why is silicon preferred over germanium in the manufacture of semiconductor devices?
33. Define drift current? Give the energy band structure of P- type semiconductor.
34. Explain why an ordinary junction transistor is called bipolar? Why transistor is called
current controlled device?
35. Draw and explain the input and output characteristics of a transistor in CE configuration
and mark the cutoff saturation and active regions.
36. Why is collector region wider than emitter region in BJT? In a BJT,the emitter current is
12 mA and the emitter current is 1.02 times the collector current. Find the base current.
37. Define the different operating regions of transistor.
38. Explain npn and pnp transistor.
39. explain the principle of operation of a thermocouple
40. explain the principle of operation of a resistive position transducer
41. explain the principle of operation of RTDs
42. Encode the following decimal numbers in BCD code. A)64 B) 525.25
43. List out the advantages of using digital circuitry. Differentiate Analog and Digital system
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44. What do you mean by radix of the number system? What is the essential characteristic
of Hexadecimal number system over Binary number system?
45. Explain characteristics of Number System with proper example
46. Convert the following number into binary numbers to octal and then to decimal.
(a) 11011100.101010
(b) 01010011.010101
(c) 10110011
47. What do you mean by Boolean algebra? List out the truth table entry for two input
NAND Gate.
48. Explain using diagram how NOR and NAND Gates are Universal Gate.
49. Explain De-Morgans theorem using example.
50. Explain Identity, Complementation, Commutative, Associative and Distributive Laws with
example.
51. Show the logic circuit for Y = AB̄ + AB. Next simplify this Boolean equation and the
corresponding circuit.
52. Show the logic circuit for this Boolean equation Y = (Ā + B)(A + B). Then, simplify the
circuit s much as possible using algebra.
53. Given the following truth table:
A B C Y
0 0 0 0
0 0 1 1
0 1 0 0
0 1 1 0
1 0 0 1
1 0 1 0
1 1 0 0
1 1 1 1
(a) Obtain the simplified functions in sum of products
(b) Obtain the simplified functions in product of sums
54. Differentiate between P-type and N-type Semiconductors.Also name the doping materials
used for their formation?
55. Why Silicon is mostly proffered as a Semiconductor material. Explain by giving at least
five reasons?
56. Explain Zener Diode as a Voltage Regulator.
57. Explain LED, the materials chosen for its formation, Working and Draw Voltage-Current
Characteristics?
58. Compare Characteristics of Transistors in its Various modes of Operation. Also state
which is best Configuration among these.
59. Compare Characteristics of Transistors in its Various modes of Operation. Also state
which is best Configuration among these.
60. What is rectifier, explain the working of half wave rectifier with waveform
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61. Draw the circuit diagram of full wave bridge rectifier and draw its input and output
waveforms. Also state the equation for D.C. load current
62. Explain universal gates in detail
63. Draw the logic symbol and truth table of following gates. 1. AND 2. OR 3. EX-OR 4.
NOR
64. Describe the working operation of half-wave rectifier with suitable waveforms. Also, derive
the equation for DC output voltage.
65. Define and discuss following terms in relation to diode:
(a) Transition capacitance,
(b) Diffusion capacitance
66. Compare half wave, center tapped and bridge rectifier
67. Define current gain α and β for transistor. Derive relationship between α and β.
68. Compare CB, CE and CC configuration in transistor.
69. Describe the diode’s static and dynamic resistances. Also, draw diode V-I characteristic.
70. Distinguish between avalanche and zener breakdown in p-n junction diode.
71. Explain
(a) Zener Diode
(b) Photodiode
(c) LED
72. Draw and explain in details the 7-segment LED
73. Explain principle of operation of a Photodiode.
74. Derive the relationship between α and β. Calculate the value of Ic, Ie for a transistor that
has α = 0.98 and Ib = 100µA.
75. State and prove Demorgan’s Theorem
3 Long Questions
1. Explain the application of transistor as an amplifier and switch
2. Explain thermocouple for the measurement of temperature in detail.
3. Prove the following Boolean expressions :
(a) A + AB = A
(b) (A+ B) (A + C) = A + BC
(c) (A + B’ + AB) (A + B’) (A’B) = 0
(d) A + A’B + AB = A + B
4. Explain full wave center tapped rectifier with capacitive filter.
5. Prove that
(a) (A + B̄ + AB)(A + B̄)(ĀB) = 0
(b) ĀC̄ + BC̄ + ĀBC + ABC = ĀC̄ + B
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6. Perform subtraction using 2’s complement and convert it into octal.
(a) (123.45)8 − (50)8
(b) (175)8 − (100)8
7. Prove that NAND and NOR are universal Gates.
8. Explain working of full wave bridge rectifier with associated waveforms. Define following
terms :
(a) Rectification efficiency
(b) PIV
9. Explain construction and working of linear variable differential transformer.
10. State and proof Demorgaon’s theorem and write the Boolean equation for NAND, NOR,
EX-OR and EX-NOR gate.
11. Explain thermo couple and how temp. is measured using thermo couple and explain its
types.
12. Draw experimental setup for V-I characteristics of common emitter configuration and
explain input output characteristics.
13. Explain full wave rectifier. Sketch associated waveforms. And derive an expression for :
(a) Average value of dc voltage
(b) rms value of dc voltage.
14. Perform subtraction using 2’s complement :
(a) (A.59)16 − (B.31)16
(b) (75)10 − (25)10
15. Explain basic and universal logic gates with symbol, equation and truth table.
16. Explain the principal and working of an LVDT. Also draw the plot showing variation in
amplitude and phase of the output with displacement.
17. What is the common name by which photovoltaic transducers are known as? Explain
their working in details.
18. Simplify the following Boolean expressions:
(a) A B C + A B C’ + A B’ C+ A B’ C’ + A’ B C + A’ B C’ + A’ B’ C’ + A’
B’ C
(b) (A’ + B + C’) (A’ + B + C) ( C + D) (C + D + E)
19. Do the following
(a) (7F)16 − (5C)16 using 2’s complement method
(b) (735.25)10 = (?)16
(c) 101011.111011)2 = (?)8 = (?)16
20. For the logic expression Z = ĀB + AB̄
(a) Obtain the truth table.
(b) Name the operation performed
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(c) Realize this operation using AND, OR, NOT gates
(d) Realize Same operation using only NAND gates
21. Draw CE transistor configuration and give its input and output characteristics. Also derive
the relation between current gain of CE, CB and CC configurations.
22. Draw the circuit of transistor in CE configuration. Sketch the output characteristics.
Indicate the active, saturation and cutoff regions.
23. Indicate and briefly explain various current components flowing in p-n-p transistor with
forward-based emitter junction and reverse-biased collector junction.
24. A diode having internal resistance 20 is used for half-wave rectification. If the applied
voltage V = 50 sin(ωt) and load resistance RL = 800Ω,find:
(a) Im, Idc, Irms
(b) d.c. output voltage
(c) efficiency of rectification.
25. Define the rectification and describe the full wave bridge rectifier with the help of neat
circuit diagram and waveforms.
26. Explain DC load line and Q-point for any transistor configuration. Also state the necessity
of biasing and list biasing methods for transistor.
27. Where CC configuration is used? Draw circuit of CC and CB configuration of transistor.
Compare current gain, voltage gain, input impedance and output impedance of both
28. Draw circuit of transistor as a switch
22 of 22

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