This document provides specifications for the 2SK3484 N-channel MOS field effect transistor (MOSFET) including: - Electrical characteristics such as on-state resistance, gate cut-off voltage, and input/output capacitances. - Thermal characteristics such as thermal resistance and power dissipation derating curves. - Switching characteristics such as turn-on/off delay times and rise/fall times. - Package drawings and equivalent circuit diagram for the TO-251 and TO-252 packages.

1. The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
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MOS FIELD EFFECT TRANSISTOR
2SK3484
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15069EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002
DESCRIPTION
The 2SK3484 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low on-state resistance
RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A)
RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A)
• Low Ciss: Ciss = 900 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 100 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±16 A
Drain Current (pulse)
Note1
ID(pulse) ±22 A
Total Power Dissipation (TC = 25°C) PT1 30 W
Total Power Dissipation (TA = 25°C) PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 10 A
Single Avalanche Energy
Note2
EAS 10 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C) 4.17 °C/W
Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3484 TO-251 (MP-3)
2SK3484-Z TO-252 (MP-3Z)
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2. Data Sheet D15069EJ2V0DS2
2SK3484
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10 µA
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V
Forward Transfer Admittance
Note
| yfs | VDS = 10 V, ID = 8 A 4.7 9.5 S
Drain to Source On-state Resistance
Note
RDS(on)1 VGS = 10 V, ID = 8 A 100 125 mΩ
RDS(on)2 VGS = 4.5 V, ID = 8 A 110 148 mΩ
Input Capacitance Ciss VDS = 10 V 900 pF
Output Capacitance Coss VGS = 0 V 110 pF
Reverse Transfer Capacitance Crss f = 1 MHz 50 pF
Turn-on Delay Time td(on) VDD = 50 V, ID = 8 A 9.0 ns
Rise Time tr VGS = 10 V 5.0 ns
Turn-off Delay Time td(off) RG = 0 Ω 30 ns
Fall Time tf 4.0 ns
Total Gate Charge QG VDD = 80 V 20 nC
Gate to Source Charge QGS VGS = 10 V 3.0 nC
Gate to Drain Charge QGD ID = 16 A 5.0 nC
Body Diode Forward Voltage
Note
VF(S-D) IF = 16 A, VGS = 0 V 1.0 V
Reverse Recovery Time trr IF = 16 A, VGS = 0 V 60 ns
Reverse Recovery Charge Qrr di/dt = 100 A/ µs 122 nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25 Ω
50 Ω
PG.
L
VDD
VGS = 20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 sµ
Duty Cycle ≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%0
ID
90%
90%
td(on) tr td(off) tf
10%
τ
ID
0
ton toff
PG. 50 Ω
D.U.T.
RL
VDD
IG = 2 mA
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3. Data Sheet D15069EJ2V0DS 3
2SK3484
TYPICAL CHARACTERISTICS (TA = 25°C)
TC - Case Temperature - ˚C
PT-TotalPowerDissipation-W
0 8020 40 60 100 140120 160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - ˚C
dT-PercentageofRatedPower-%
0 4020 60 100 14080 120 160
120
100
80
60
40
20
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t)-TransientThermalResistance-˚C/W
10
0.01
0.1
1
100
1000
1 m 10 m 100 m 1 10 100 1000
Single Pulse
10 100
Rth(ch-C) = 4.17˚C/W
µ µ
Rth(ch-A) = 125˚C/W
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID-DrainCurrent-A
10
1
0.1
100
0.1
1 10 100
TC = 25˚C
Single Pulse
1000
10
m
s
ID(pulse)
ID(DC)
1
m
s
100
µs10
µs
RDS(on)
Lim
ited
(atVG
S
=
10
V)
PowerDissipation
Lim
ited
DC
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4. Data Sheet D15069EJ2V0DS4
2SK3484
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
RDS(on)-DraintoSourceOn-stateResistance-mΩ
10.1
250
200
150
100
50
0
10 100
Pulsed
VGS = 4.5 V
10 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
VGS(off)-GateCut-offVoltage-V
1
2
3
4
−50 0 50 100 150
0
VDS = 10 V
ID = 1 mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|yfs|-ForwardTransferAdmittance-S
0.01 0.1 1
10
100
10 100
0.1
0.01
1
Pulsed
TA = 150˚C
75˚C
25˚C
−40˚C
VDS = 10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
RDS(on)-DraintoSourceOn-stateResistance-mΩ
5 10 15 20
200
150
100
50
0
8 A
ID = 16 A
Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID-DrainCurrent-A
2 3 410
VGS =10 V
4.5 V
25
20
15
10
5
0
Pulsed
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID-DrainCurrent-A
1 2 3 4 5
1
0.01
10
1
0.1
100
TA = −40˚C
25˚C
75˚C
150˚C
Pulsed
VDS = 10 V
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5. Data Sheet D15069EJ2V0DS 5
2SK3484
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on),tr,td(off),tf-SwitchingTime-ns
10
1
10.1
100
1000
10 100
tf
tr
td(on)
td(off)
VDD = 50 V
VGS = 10 V
RG = 0 Ω
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
Ciss,Coss,Crss-Capacitance-pF
10
0.01 0.1
100
1000
10000
1 10 100
Ciss
VGS = 0 V
f = 1 MHz
Coss
Crss
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
RDS(on)-DraintoSourceOn-stateResistance-mΩ
−50 0 50 100 150
300
200
100
0
10 V
VGS = 4.5 V
ID = 8 A
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1
ISD-DiodeForwardCurrent-A
0 1.5
VSD - Source to Drain Voltage - V
0.5
Pulsed
0.01
0.1
1
10
100
0 V
VGS = 10 V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF - Drain Current - A
trr-ReverseRecoveryTime-ns
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1 10 100
1000
100
µ
DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS-GatetoDrainVoltage-V
QG - Gate Charge - nC
VDS-DraintoSourceVoltage-V
5 10 15 20 25
100
80
60
40
20
0
VDS
VGS
VDD = 80 V
50 V
20 V
ID = 16 A
10
8
6
4
2
0
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6. Data Sheet D15069EJ2V0DS6
2SK3484
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - mH
IAS-SingleAvalancheCurrent-A
1
10
100
1 10
VDD = 50V
RG = 25 Ω
VGS = 20→0 V
Startimg Tch = 25˚C
IAS = 10 A
0.01 0.1
0.1
EAS =10mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature - ˚C
EnergyDeratingFactor-%
25 50 75 100
160
140
120
100
80
60
40
20
0
125 150
VDD = 50 V
RG = 25 Ω
VGS = 20 → 0 V
IAS ≤ 10 A
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7. Data Sheet D15069EJ2V0DS 7
2SK3484
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3) 2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
21 3
6.5 ±0.2
5.0 ±0.2
4
1.5−0.1
+0.2
5.5±0.27.0MIN.
13.7MIN.
2.32.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6±0.2
1.1 ±0.2
0.5 −0.1
+0.2
0.5 −0.1
+0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1 2 3
4
6.5 ±0.2
5.0 ±0.2
4.3MAX.0.8
2.3 2.3
0.9
MAX.
5.5±0.2
10.0MAX.
2.0
MIN.
1.5−0.1
+0.2
2.3 ±0.2
0.5 ±0.1
0.8
MAX.
0.8
1.0MIN.
1.8TYP.
0.7
1.1 ±0.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
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8. 2SK3484
The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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