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Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK ST...AUTHELECTRONIC
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Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK ST...AUTHELECTRONIC
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Overview of the fundamental roles in Hydropower generation and the components involved in wider Electrical Engineering.
This paper presents the design and construction of hydroelectric dams from the hydrologist’s survey of the valley before construction, all aspects and involved disciplines, fluid dynamics, structural engineering, generation and mains frequency regulation to the very transmission of power through the network in the United Kingdom.
Author: Robbie Edward Sayers
Collaborators and co editors: Charlie Sims and Connor Healey.
(C) 2024 Robbie E. Sayers
Industrial Training at Shahjalal Fertilizer Company Limited (SFCL)MdTanvirMahtab2
This presentation is about the working procedure of Shahjalal Fertilizer Company Limited (SFCL). A Govt. owned Company of Bangladesh Chemical Industries Corporation under Ministry of Industries.
Welcome to WIPAC Monthly the magazine brought to you by the LinkedIn Group Water Industry Process Automation & Control.
In this month's edition, along with this month's industry news to celebrate the 13 years since the group was created we have articles including
A case study of the used of Advanced Process Control at the Wastewater Treatment works at Lleida in Spain
A look back on an article on smart wastewater networks in order to see how the industry has measured up in the interim around the adoption of Digital Transformation in the Water Industry.
Using recycled concrete aggregates (RCA) for pavements is crucial to achieving sustainability. Implementing RCA for new pavement can minimize carbon footprint, conserve natural resources, reduce harmful emissions, and lower life cycle costs. Compared to natural aggregate (NA), RCA pavement has fewer comprehensive studies and sustainability assessments.
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Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
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Data file handling has been effectively used in the program.
The automated cosmetic shop management system should deal with the automation of general workflow and administration process of the shop. The main processes of the system focus on customer's request where the system is able to search the most appropriate products and deliver it to the customers. It should help the employees to quickly identify the list of cosmetic product that have reached the minimum quantity and also keep a track of expired date for each cosmetic product. It should help the employees to find the rack number in which the product is placed.It is also Faster and more efficient way.
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Gen AI Study Jams _ For the GDSC Leads in India.pdf
Semiconductor Datasheet Template
1. 24062016TDS
Junction Power
Ordering Information
Part Number Package Option
24062016TDS-O13 MA-123
24062016TDS-I23 MA-145
Description
Junction power box power supply is a 24 V hardwired power
supply. The Box power supply is mounted on a 4 inch square
junction box. The power supply is protected electronically in the
event of a output miswire, and will automatically reset when wiring
is corrected.
Features
High junction temperature capability
Avalanche-rated
Low leakage current
Good trade-off between leakage current and forward
voltage drop
Benefits
Simple wiring scheme uses 4-conductor, low voltage link to
provide power and communication for both QS electronic drive
units (EDUs) and seeTouchR QS keypads
Flexible wiring topology for easy installation and integration
Form factor allows the power supply to be hidden in utility
spaces
Application
Notebook & LCD adaptors
desktop SMPS
Parameter Value Unit
V @ TDSS jmax 780 V
RDS(on) max <89 mΩ
Qg typ 20 nC
I @ 25 ºCDmax 24 A
Copyright TDSmaker 2017 – All Rights Reserved 1/6
Revision no: 00
Publish Date: 05.10.2017
2. 24062016TDS
Junction Power
1. Maximum Ratings
Table 2 Maximum Ratings
@ T = 25 ºC, unless otherwise specifiedj
Parameter Symbol Values Unit Condition
Min Typ Max
Continuous drain current ID -14 10.5 A TC= 100ºC
-19 12.4 A TC = 25ºC
Pulsed drain current ID, pulse -30 19.5 A TC = 25ºC
Avalanche energy, single pulse EAS -14 10.0 mJ I = 5.1A; V = 50V, VGS = 10V,
L=10mH, RG=25 Ohms
D DD
Avalanche energy, repetitive EAR -14 20.0 mJ I = 2.0; V = 50VD DD
Avalanche current, single pulse IAS 4 0.55 15.6 mJ -
MOSFET dv/dt ruggedness dv/dt 10 4.1 A VDS = 0….480V
Gate source voltage (static) VGS -14 10 V/ns Static
Gate source voltage (dynamic) VGS -30 0.6 20 V AC (F>1Hz)
Power dissipation Ptot -30 22 V TO-220, TO-263, TC = 25ºC
Storage temperature Tstg -30 34.5 W -
Operating junction temperature Tj -12 17 ºC -
Mounting torque - 15 3.4 19 ºC M3 and M3.5 screws
Continuous diode forward current ISD -30 45 N-cm Tc = 25ºC
Diode pulse current IS, pulse -10 19 A Tc = 25ºC
Reverse diode dv/dt -10 15 A V =0…480V, I <=I , T = 25ºCDS SD S j
Maximum diode commutation speed di /dtf -10 11 V/ns V =0…480V, I <=I , T = 25ºCDS SD S j
2. Thermal Characteristics
Table 3 Thermal Characteristics
Symbol Parameter
Values Unit
MA-123 MA-145 MA-113 MA-432
Rth-jC Thermal resistance, junction-case 1.4 1.3 1.4 1.1 ºC W/
Rth-jA Thermal resistance, junction-ambient 70 70 70 70 ºC W/
TS Soldering temperature, wave soldering only
allowed at leads
340 330 400 250 ºC
Copyright TDSmaker 2017 – All Rights Reserved 2/6
Revision no: 00
Publish Date: 05.10.2017
3. 24062016TDS
Junction Power
3. Electrical Characteristics
Table 4 Static Characteristics
@ T = 25ºC, unless otherwise specifiedj
Parameter Symbol Values Unit Condition
Min Typ Max
Drain-source breakdown voltage V(BR)DSS 650 900 V I = 1mA, V = 0VD GS
Gate threshold voltage VGS(TH) 2.5 2.7 2.9 V V = V I = 72uADS GS, D
Zero gate voltage drain current IDSS
- - 4
µA
V = 650V, T = 25ºC, V = 0VDS C GS
- - 100 V = 650V, T = 125ºC, V = 0VDS C GS
Gate-source leakage current IGSS - - 100 mJ V = ±30V, V = 0VGS DS
Drain-source on-state resistance RDS(on) - - 0.23 A V = 10V, I = 5.8 A,
T = 25ºC
GS D
J
Gate resistance RG - - 0.3 V/ns -
Table 5 Dynamic Characteristics
Parameter Symbol Values Unit Condition
Min Typ Max
Input capacitance Ciss - 1900 - pF
V = 100V, f = 1MHz,
V = 0V
DS
GS
Output capacitance Coss - 56 - pF
Reverse transfer capacitance Crss - 8 - pF
Turn-on delay time td(on) - 4 - ns
V = 400V, I = 4.5A
R = 3.4Ω, V = 13V
DD D
G GS
Rise time tr - 5 - ns
Turn-off delay time td(off) - 3 - ns
Fall time tf - 1 - ns
Table 6 Gate Charge Characteristics
Parameter Symbol Values Unit Condition
Min Typ Max
Gate to source charge Qgs 0,6 nC
V = 480V, I = 5.8A, V = 0 to
10V
DD D GS
Gate to drain charge Qgd 34 nC
Gate charge total Qg 3 nC
Gate plateau voltage td(on) 0.8 V
Table 7 Reverse Diode Characteristics
Parameter Symbol Values Unit Condition
Min Typ Max
Diode source-drain current ISD 5 A
Diode forward voltage Vfd 56 V I = 11.6A, V = 0V,
T = 25ºC
SD GS
J
Reverse recovery time trr 3 nS I = 11.6A,
L = 5mH
di/dt = 100A/µS
V = 60V, T = 25ºC
F
DD J
Reverse recovery charge Qrr 1.4 µC
Peak reverse recovery current Irrm A
Copyright TDSmaker 2017 – All Rights Reserved 3/6
Revision no: 00
Publish Date: 05.10.2017
4. 24062016TDS
Junction Power
4. Electrical Characteristics Graphs
Power Dissipation Maximum Transient Thermal Impedance
Max power limited by case temperature Variable is pulse time (t )p
Table 8 Thermal Performance
Typical Output Characteristics Maximum Transient Thermal Impedance
T = 25 C; Variable is VC
o
GS T = 125 C; Variable is VC
o
GS
Table 9 Output Characteristics
Typical Output Characteristics Maximum Transient Thermal Impedance
T = 25 C; Variable is VC
o
GS T = 125 C; Variable is VC
o
GS
Copyright TDSmaker 2017 – All Rights Reserved 4/6
Revision no: 00
Publish Date: 05.10.2017
5. 24062016TDS
Junction Power
Table 10 Drain-Source Resistance
Typical Drain-Source On-State Resistance Drain-Source On-State Resistance
Tj = 25oC; Variable is gate voltage (VGS) I = 14.3A, V =10VD GS
Table 11 Safe Operating Area
Typical Capacitances Typical Gate Charge
V = 0V; Freq. = 1MHzGS I = 8.6A Pulsed Vdd = 480VD
Copyright TDSmaker 2017 – All Rights Reserved 5/6
Revision no: 00
Publish Date: 05.10.2017
6. 24062016TDS
Junction Power
5. Disclaim
The information in this document is provided solely regarding TDSmaker products. The information is not a guarantee of
performance or characteristics. TDSmaker reserves the right to modify, change, amend, improve or make corrections to this
document, and its products, at any time and its sole discretion without prior written consent or notice. No license to any
intellectual property rights is granted or implied under this document. TDSmaker disclaims warranties and liabilities of any
kind including non-infringement of intellectual property rights of any third party. TDSmaker products may be used in
applications such as automotive, military, aerospace, medical or other applications where failure or malfunction may result in
personal injury, death or severe property or environmental damage only with express written approval from TDSmaker. Sale
of TDSmaker products are subject toTDSmaker’s standard terms and conditions. Products not purchased through
TDSmaker’sauthorized distributors, agents or sales representatives are void of warranty.
Copyright TDSmaker 2017 – All Rights Reserved 6/6
Revision no: 00
Publish Date: 05.10.2017