This document summarizes the specifications of an N-channel enhancement mode field effect transistor (FET) in a TO-220 or TO-263 package. It has a drain-source breakdown voltage up to 30V, continuous drain current up to 100A, and on-resistance as low as 5.3mΩ at a gate-source voltage of 10V. The document provides detailed maximum ratings, electrical characteristics, and test conditions. Graphs depict characteristics such as output, transfer and capacitance curves, and switching waveforms are shown.

1. N-Channel Enhancement Mode Field Effect Transistor
CEP83A3/CEB83A3
FEATURES
30V, 100A, RDS(ON) = 5.3mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
TO-220 & TO-263 package.
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
PD
IDM
30
0.67
100
400
100
±20
V
W
A
A
V
W/ C
4 - 178
S
G
D
G
S S
D
D
G
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
RDS(ON) = 8.0mΩ @VGS = 4.5V.
Lead free product is acquired.
Rev 1. 2005.August http://www.cetsemi.com
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
EAS
IAS 35
875
A
mJ
Operating and Store Temperature Range TJ,Tstg -55 to 175 C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Parameter Symbol Limit Units
C/W
C/W
62.5
1.5RθJC
RθJA

2. CEP83A3/CEB83A3
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Forward Transconductance
Gate Threshold Voltage
Static Drain-Source
On-Resistance
BVDSS
IDSS
IGSSR
IGSSF
8.0
1 3
-100
100
1
mΩ
V
nA
nA
µA
V
S
4 - 179
Gate Body Leakage Current, Reverse
On Characteristics b
Dynamic Characteristics c
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-Off Fall Time
Turn-Off Delay Time
Turn-On Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
Test Condition
VGS = 0V, ID = 250µA
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
VSD
Typ Max
30
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 40A
VDS = 10V, ID = 15A
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6Ω
VDS = 15V, ID = 16A,
VGS = 5V
VDS = 15V, VGS = 0V,
f = 1.0 MHz
VGS = 0V, IS = 20A
9500
800
300
25.7
10
128
34
50
20
200
70
50
20.8
19
65
90
1.5
27
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
VGS = 10V, ID = 50A 5.3 mΩ
6.0
4.2
4
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C

3. CEP83A3/CEB83A3
4 - 180
C,Capacitance(pF)
ID,DrainCurrent(A)
ID,DrainCurrent(A)
VTH,Normalized
Gate-SourceThresholdVoltage
RDS(ON),Normalized
RDS(ON),On-Resistance(Ohms)
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Ciss
Coss
Crss
12000
10000
8000
6000
4000
2000
0
0 5 10 15 20 25
2.2
1.9
1.6
1.3
1.0
0.7
0.4
VGS=10V
ID=50A
-100 -50 0 50 100 150 200
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
-50 -25 0 25 50 75 100 125 150
IS,Source-draincurrent(A)
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
0 1 2 3 4
0
20
40
60
80
100
VGS=3V
VGS=10,8,6,4V
0 1 2 3
-55 C
25 C
10
54
20
30
40
50
0
TJ=125 C
0.4 0.6 0.8 1.0
10
1
10
0
10
2
1.2 1.4
VGS=0V

4. 4 - 181
VGS,GatetoSourceVoltage(V)
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
ID,DrainCurrent(A)
CEP83A3/CEB83A3
Figure 9. Switching Test Circuit Figure 10. Switching Waveforms
t
V
V
t
td(on)
OUT
IN
on
r
10%
td(off)
90%
10% 10%
50% 50%
90%
toff
tf
90%
PULSE WIDTH
INVERTED
VDD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
r(t),NormalizedEffective
TransientThermalImpedance
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
10
0
10
-1
10
-2
10
0
10
1
10
-1
10
-2
10
-3
10
-4
10
-5
10
0
10
2
10
1
10
0
10
1
10
-1
10
2
10
3
RDS(ON)Limit
10ms
1ms
DC
100µs
Single Pulse
TC=25 C
TJ=150 C
PDM
t1
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
10
8
6
4
2
0
0 20 40 60 100
VDS=15V
ID=16A
80
4