This document provides specifications for a HEXFET Power MOSFET transistor. Key specifications include: - Continuous drain current of 10A at 25°C and 7A at 100°C with a gate voltage of 10V. - Static drain-source on-resistance of 0.185 ohms. - Drain-source breakdown voltage of 100V. - Maximum junction temperature of 175°C. - Available in D-PAK and I-PAK packages suitable for surface mount and through-hole applications respectively.