Original N-CHANNEL Mossfet IRFB4227PBF IRFB4227 4227 130A 200V TO-220 New IR https://authelectronic.com/original-n-channel-mossfet-irfb4227pbf-irfb4227-4227-130a-200v-to-220-new-ir

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09/10/07
IRFB4227PbF
Notes  through † are on page 8
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFETutilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
S
D
G
TO-220AB
D
S
D
G
G D S
Gate Drain Source
VDS max 200 V
VDS (Avalanche) typ. 240 V
RDS(ON) typ. @ 10V 19.7 m:
IRP max @ TC= 100°C 130 A
TJ max 175 °C
Key Parameters
Absolute Maximum Ratings
Parameter Units
VGS Gate-to-Source Voltage V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current c
IRP @ TC = 100°C Repetitive Peak Current g
PD @TC = 25°C Power Dissipation W
PD @TC = 100°C Power Dissipation
Linear Derating Factor W/°C
TJ Operating Junction and °C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw N
Thermal Resistance
Parameter Typ. Max. Units
RθJC
Junction-to-Case f ––– 0.45
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA
Junction-to-Ambient f ––– 62
Max.
46
260
65
±30
130
300
-40 to + 175
10lbxin (1.1Nxm)
330
190
2.2
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
l Class-D Audio Amplifier 300W-500W
(Half-bridge)
PD - 97035D

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S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage 200 ––– ––– V
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 170 ––– mV/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 19.7 24 mΩ
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -13 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 1.0 mA
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 49 ––– ––– S
Qg Total Gate Charge ––– 70 98 nC
Qgd Gate-to-Drain Charge ––– 23 –––
td(on) Turn-On Delay Time ––– 33 ––– ns
tr Rise Time ––– 20 –––
td(off) Turn-Off Delay Time ––– 21 –––
tf Fall Time ––– 31 –––
tst Shoot Through Blocking Time 100 ––– ––– ns
EPULSE Energy per Pulse µJ
Ciss Input Capacitance ––– 4600 –––
Coss Output Capacitance ––– 460 ––– pF
Crss Reverse Transfer Capacitance ––– 91 –––
Coss eff. Effective Output Capacitance ––– 360 –––
LD Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package
Avalanche Characteristics
Parameter Units
EAS Single Pulse Avalanche Energyd mJ
EAR Repetitive Avalanche Energy ™ mJ
VDS(Avalanche) Repetitive Avalanche VoltageÙ V
IAS Avalanche CurrentÃd A
Diode Characteristics
Parameter Min. Typ. Max. Units
IS @ TC = 25°C Continuous Source Current ––– ––– 65
(Body Diode) A
ISM Pulsed Source Current ––– ––– 260
(Body Diode)Ù
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 100 150 ns
Qrr Reverse Recovery Charge ––– 430 640 nC
VDD = 100V
ID = 46A
RG = 2.5Ω
VGS = 10V e
––– 570 –––
––– 910 –––
33
39
–––
–––
240 –––
Typ. Max.
ƒ = 1.0MHz,
––– 140
TJ = 25°C, IF = 46A, VDD = 50V
di/dt = 100A/µs e
TJ = 25°C, IS = 46A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 46A e
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VGS = 0V, VDS = 0V to 160V
VDS = 200V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 0V
L = 220nH, C= 0.4µF, VGS = 15V
MOSFET symbol
VDS = 25V, ID = 46A
VDD = 100V, ID = 46A, VGS = 10Ve
Conditions
and center of die contact
VDD = 160V, VGS = 15V, RG= 4.7Ω
VDS = 160V, RG= 4.7Ω, TJ = 25°C
L = 220nH, C= 0.4µF, VGS = 15V
VDS = 160V, RG= 4.7Ω, TJ = 100°C
VDS = 25V

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Fig 6. Typical EPULSE vs. Drain CurrentFig 5. Typical EPULSE vs. Drain-to-Source Voltage
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature
3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ID,Drain-to-SourceCurrent(Α)
VDS = 25V
≤ 60µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.0
1.0
2.0
3.0
4.0
RDS(on),Drain-to-SourceOnResistance
(Normalized)
ID = 46A
VGS = 10V
130 140 150 160 170 180 190
ID, Peak Drain Current (A)
0
200
400
600
800
1000
Energyperpulse(µJ)
L = 220nH
C = Variable
100°C
25°C
110 120 130 140 150 160 170
VDS, Drain-to -Source Voltage (V)
100
200
300
400
500
600
700
800
900
1000
Energyperpulse(µJ)
L = 220nH
C = 0.4µF
100°C
25°C
0.1 1 10
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID,Drain-to-SourceCurrent(A)
≤ 60µs PULSE WIDTH
Tj = 175°C
7.0V
VGS
TOP 15V
10V
8.0V
BOTTOM 7.0V
0.1 1 10
VDS, Drain-to-Source Voltage (V)
10
100
ID,Drain-to-SourceCurrent(A)
≤ 60µs PULSE WIDTH
Tj = 25°C
7.0V
VGS
TOP 15V
10V
8.0V
BOTTOM 7.0V

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Fig 11. Maximum Drain Current vs. Case Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Safe Operating Area
Fig 7. Typical EPULSE vs.Temperature
Fig 10. Typical Gate Charge vs.Gate-to-Source VoltageFig 9. Typical Capacitance vs.Drain-to-Source Voltage
25 50 75 100 125 150
Temperature (°C)
0
200
400
600
800
1000
1200
1400
Energyperpulse(µJ)
L = 220nH
C= 0.4µF
C= 0.3µF
C= 0.2µF
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ISD,ReverseDrainCurrent(A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
C,Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0 20 40 60 80 100 120
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS,Gate-to-SourceVoltage(V)
VDS= 160V
VDS= 100V
VDS= 40V
ID= 46A
25 50 75 100 125 150 175
TC , CaseTemperature (°C)
0
10
20
30
40
50
60
70
ID,DrainCurrent(A)
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID,Drain-to-SourceCurrent(A)
Tc = 25°C
Tj = 175°C
Single Pulse
1µsec
10µsec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec

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1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
ThermalResponse(ZthJC)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 15. Threshold Voltage vs. Temperature
Fig 14. Maximum Avalanche Energy Vs. TemperatureFig 13. On-Resistance Vs. Gate Voltage
Fig 16. Typical Repetitive peak Current vs.
Case temperature
Ri (°C/W) τi (sec)
0.08698 0.000074
0.2112 0.001316
0.1506 0.009395
τJ
τJ
τ1
τ1
τ2
τ2
τ3
τ3
R1
R1
R2
R2
R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS(th)GatethresholdVoltage(V)
ID = 250µA
25 50 75 100 125 150 175
Case Temperature (°C)
0
40
80
120
160
200
RepetitivePeakCurrent(A)
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
Square Pulse
5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
0.00
0.04
0.08
0.12
0.16
RDS(on),Drain-to-SourceOnResistance(Ω)
TJ = 25°C
TJ = 125°C
ID = 46A
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
100
200
300
400
500
600
EAS,SinglePulseAvalancheEnergy(mJ)
I D
TOP 8.6A
14A
BOTTOM 39A

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Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms
VGS
VDS
90%
10%
td(on) td(off)tr tf
Fig 19b. Unclamped Inductive WaveformsFig 19a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
RG
IAS
0.01Ωtp
D.U.T
LVDS
+
-
VDD
DRIVER
A
15V
20VVGS
Fig 21a. Gate Charge Test Circuit Fig 21b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+-
-
-
ƒ
„
‚
RG
VDD• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T

Inductor Current
1K
VCC
DUT
0
L
S
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-VDD

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Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms
Fig 21c. EPULSE Test Waveforms

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Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2007
TO-220AB packages are not recommended for Surface Mount Application.
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 39A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
… Half sine wave with duty cycle = 0.25, ton=1µsec.
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/