This document discusses two MOSFET-only voltage reference circuit designs and analyzes their temperature coefficient and output noise. The first circuit uses a self-cascode PTAT generator and threshold voltage extractor to generate a reference voltage. The second combines a CTAT current from one transistor with a PTAT current from another using a current mirror. Both circuits were simulated in 180nm CMOS technology from -25°C to 50°C. The results show the output voltage variation over temperature for the first circuit and compare the noise analysis of the two designs. In conclusion, the performance of the two circuits is compared.
Achievement of ac voltage traceability and uncertainty of nis, egypt through ...Alexander Decker
This document describes how the National Institute for Standards (NIS) in Egypt achieved traceability of AC voltage measurements through collaboration with the National Institute of Standards and Technology (NIST) in the United States. NIS used thermal voltage converters and micropotentiometers calibrated by NIST to measure AC voltages from 50mV to 200V over a range of frequencies. A bilateral comparison between NIS and NIST found good agreement between their measurement results, within 0.4-13.3 parts per million. Electrical modeling and simulation helped characterize the devices and understand measurement uncertainties. The collaboration helped strengthen NIS's capabilities for traceable AC voltage measurements.
A novel voltage reference without the operational amplifier and resistorsIJRES Journal
novel voltage reference has been proposed and simulated using a 0.18μm CMOS process in
this paper. A near-zero temperature coefficient voltage is achieved in virtue of the bias voltage subcirciut which
consists of two MOSFETs operating in the saturation region. The kind of bias voltage subcirciut is used to
adjust the output voltage and compensate the curvature. The output voltage is equal to the extrapolated
threshold voltage of a MOSFET at absolute zero temperature, which was about 591.5 mV for the MOSFETs we
used. The power supply rejection ratio (PSRR) is improved with three feedback loops. Although the output
voltage fluctuates with process variation, the circuit can monitor the process variation in MOSFET threshold
voltage. The simulation results show that the line regulation is 0.75 mV/V in a supply voltage range from 1.6 V
to 3.1 V and the temperature coefficient is around 10.8 ppm/℃ to 28.5 ppm/℃ at 9 different corners in a
temperature range from -20℃ to 120 ℃.
The PSRR is -70 dB at 100Hz with a supply voltage at 1.8 V, and the
layout size is 0.012mm2. The results of simulation and post layout simulation are almost the same.
TOWARDS TEMPERATURE-INSENSITIVE NANOSCALE CMOS CIRCUITS WITH ADAPTIVELY REGUL...VLSICS Design
In this paper, we show that the temperature-induced performance drop seen in nanoscale CMOS circuitscan be tackled by powering the circuits with adaptively regulated voltage power supplies. Essentially, when temperature rises, the supply voltage will be bumped up to offset otherwise performance degradation. To avoid thermal over-drift as chip temperature exceeds its operation range, a voltage limiteris integrated into the proposed power supply to cap the supply voltage. Using this proposed adaptive voltage source to power individual CMOS logic gates and/or subsystems will free the chips from using expensive high-precision temperature sensors for thermal management and performance tuning. Experiments on various benchmark circuits, which are implemented with a 45nm CMOS technology, have confirmed that the circuit delay variation can be reduced to 15%~30% over a wide temperature range (0℃ to 90℃), a sharp contrast to the large delay variations(50%~75%)observed in most IC designs where a constant power supply is employed.
Memristor-Capacitor Based Startup Circuit for Voltage Reference Generatorsmangal das
This document presents a memristor-capacitor based startup circuit for voltage reference generators. It derives theoretical equations describing memristor switching behavior and proposes a startup circuit using a series combination of memristor and capacitor. Simulation results show the memristor-based circuit achieves an on to off state transition in 2.8 ns, much faster than a conventional MOSFET-based startup circuit which takes 55.56 ns. While no significant speed difference is seen compared to a resistor-based startup circuit, the memristor circuit offers area savings due to memristors' smaller size compared to resistors.
This document provides instructions for an electronics lab experiment on voltage regulators. The objectives are to study the major parts of a voltage regulator and how they work, determine the load and line regulation of a voltage regulator, and study the operation of a voltage regulator with constant current limiting. The experiment involves building circuits with discrete components to demonstrate a basic linear voltage regulator and one with constant current limiting. Measurements will be taken to analyze the load and line regulation and generate voltage-current graphs to characterize the constant current limiting behavior.
TOWARDS TEMPERATURE-INSENSITIVE NANOSCALE CMOS CIRCUITS WITH ADAPTIVELY REGUL...VLSICS Design
In this paper, we show that the temperature-induced performance drop seen in nanoscale CMOS circuitscan be tackled by powering the circuits with adaptively regulated voltage power supplies. Essentially, when temperature rises, the supply voltage will be bumped up to offset otherwise performance degradation. To avoid thermal over-drift as chip temperature exceeds its operation range, a voltage limiteris integrated into the proposed power supply to cap the supply voltage. Using this proposed adaptive voltage source to power individual CMOS logic gates and/or subsystems will free the chips from using expensive high-precision temperature sensors for thermal management and performance tuning. Experiments on various benchmark circuits, which are implemented with a 45nm CMOS technology, have confirmed that the circuit delay variation can be reduced to 15%~30% over a wide temperature range (0℃ to 90℃), a sharp contrast to the large delay variations(50%~75%)observed in most IC designs where a
constant power supply is employed.
This document summarizes a research paper on implementing hysteresis control for space vector pulse width modulation (SVPWM) inverters. It begins by introducing SVPWM and total harmonic distortion (THD). It then describes the principles of SVPWM, including determining switching times and patterns. Next, it defines the hysteresis band control method using a relay function. The document proceeds to model the inverter and describe the switching interval generator and control signal generator blocks. Finally, it provides an overview of the simulation model, which combines hysteresis control with SVPWM.
This document describes a novel electrostatic precipitator design that uses a high frequency transformer or three-phase transformer controlled by power electronic devices like IGBTs. This improves the power consumption and performance of the electrostatic precipitator. The design allows for better control of submicron particles from exhaust gases. Key aspects of the novel design include a four-dimensional discharge electrode, high frequency transformer, three-phase transformer, IGBT converter, thyristor, and diode full bridge rectifier. The design aims to more effectively agglomerate and capture very fine particles.
Achievement of ac voltage traceability and uncertainty of nis, egypt through ...Alexander Decker
This document describes how the National Institute for Standards (NIS) in Egypt achieved traceability of AC voltage measurements through collaboration with the National Institute of Standards and Technology (NIST) in the United States. NIS used thermal voltage converters and micropotentiometers calibrated by NIST to measure AC voltages from 50mV to 200V over a range of frequencies. A bilateral comparison between NIS and NIST found good agreement between their measurement results, within 0.4-13.3 parts per million. Electrical modeling and simulation helped characterize the devices and understand measurement uncertainties. The collaboration helped strengthen NIS's capabilities for traceable AC voltage measurements.
A novel voltage reference without the operational amplifier and resistorsIJRES Journal
novel voltage reference has been proposed and simulated using a 0.18μm CMOS process in
this paper. A near-zero temperature coefficient voltage is achieved in virtue of the bias voltage subcirciut which
consists of two MOSFETs operating in the saturation region. The kind of bias voltage subcirciut is used to
adjust the output voltage and compensate the curvature. The output voltage is equal to the extrapolated
threshold voltage of a MOSFET at absolute zero temperature, which was about 591.5 mV for the MOSFETs we
used. The power supply rejection ratio (PSRR) is improved with three feedback loops. Although the output
voltage fluctuates with process variation, the circuit can monitor the process variation in MOSFET threshold
voltage. The simulation results show that the line regulation is 0.75 mV/V in a supply voltage range from 1.6 V
to 3.1 V and the temperature coefficient is around 10.8 ppm/℃ to 28.5 ppm/℃ at 9 different corners in a
temperature range from -20℃ to 120 ℃.
The PSRR is -70 dB at 100Hz with a supply voltage at 1.8 V, and the
layout size is 0.012mm2. The results of simulation and post layout simulation are almost the same.
TOWARDS TEMPERATURE-INSENSITIVE NANOSCALE CMOS CIRCUITS WITH ADAPTIVELY REGUL...VLSICS Design
In this paper, we show that the temperature-induced performance drop seen in nanoscale CMOS circuitscan be tackled by powering the circuits with adaptively regulated voltage power supplies. Essentially, when temperature rises, the supply voltage will be bumped up to offset otherwise performance degradation. To avoid thermal over-drift as chip temperature exceeds its operation range, a voltage limiteris integrated into the proposed power supply to cap the supply voltage. Using this proposed adaptive voltage source to power individual CMOS logic gates and/or subsystems will free the chips from using expensive high-precision temperature sensors for thermal management and performance tuning. Experiments on various benchmark circuits, which are implemented with a 45nm CMOS technology, have confirmed that the circuit delay variation can be reduced to 15%~30% over a wide temperature range (0℃ to 90℃), a sharp contrast to the large delay variations(50%~75%)observed in most IC designs where a constant power supply is employed.
Memristor-Capacitor Based Startup Circuit for Voltage Reference Generatorsmangal das
This document presents a memristor-capacitor based startup circuit for voltage reference generators. It derives theoretical equations describing memristor switching behavior and proposes a startup circuit using a series combination of memristor and capacitor. Simulation results show the memristor-based circuit achieves an on to off state transition in 2.8 ns, much faster than a conventional MOSFET-based startup circuit which takes 55.56 ns. While no significant speed difference is seen compared to a resistor-based startup circuit, the memristor circuit offers area savings due to memristors' smaller size compared to resistors.
This document provides instructions for an electronics lab experiment on voltage regulators. The objectives are to study the major parts of a voltage regulator and how they work, determine the load and line regulation of a voltage regulator, and study the operation of a voltage regulator with constant current limiting. The experiment involves building circuits with discrete components to demonstrate a basic linear voltage regulator and one with constant current limiting. Measurements will be taken to analyze the load and line regulation and generate voltage-current graphs to characterize the constant current limiting behavior.
TOWARDS TEMPERATURE-INSENSITIVE NANOSCALE CMOS CIRCUITS WITH ADAPTIVELY REGUL...VLSICS Design
In this paper, we show that the temperature-induced performance drop seen in nanoscale CMOS circuitscan be tackled by powering the circuits with adaptively regulated voltage power supplies. Essentially, when temperature rises, the supply voltage will be bumped up to offset otherwise performance degradation. To avoid thermal over-drift as chip temperature exceeds its operation range, a voltage limiteris integrated into the proposed power supply to cap the supply voltage. Using this proposed adaptive voltage source to power individual CMOS logic gates and/or subsystems will free the chips from using expensive high-precision temperature sensors for thermal management and performance tuning. Experiments on various benchmark circuits, which are implemented with a 45nm CMOS technology, have confirmed that the circuit delay variation can be reduced to 15%~30% over a wide temperature range (0℃ to 90℃), a sharp contrast to the large delay variations(50%~75%)observed in most IC designs where a
constant power supply is employed.
This document summarizes a research paper on implementing hysteresis control for space vector pulse width modulation (SVPWM) inverters. It begins by introducing SVPWM and total harmonic distortion (THD). It then describes the principles of SVPWM, including determining switching times and patterns. Next, it defines the hysteresis band control method using a relay function. The document proceeds to model the inverter and describe the switching interval generator and control signal generator blocks. Finally, it provides an overview of the simulation model, which combines hysteresis control with SVPWM.
This document describes a novel electrostatic precipitator design that uses a high frequency transformer or three-phase transformer controlled by power electronic devices like IGBTs. This improves the power consumption and performance of the electrostatic precipitator. The design allows for better control of submicron particles from exhaust gases. Key aspects of the novel design include a four-dimensional discharge electrode, high frequency transformer, three-phase transformer, IGBT converter, thyristor, and diode full bridge rectifier. The design aims to more effectively agglomerate and capture very fine particles.
This document provides instructions for an experiment involving Kirchhoff's Current and Voltage Laws. The objectives are to learn and apply Kirchhoff's Current Law and Kirchhoff's Voltage Law, obtain further practice with electrical measurements, and compare results with calculations and simulations. The experiment uses a circuit with four resistors to apply the two Kirchhoff's Laws and calculate voltages and currents at various points. Students are instructed to use the laws to derive equations relating node voltages, solve them through calculation and simulation, measure resistor values, and compare results.
The document summarizes an experiment on verifying Norton's theorem and delta-star transformations. Key steps include:
1) Measuring resistance values of circuit components and calculating Norton parameters like internal resistance RN and current IN.
2) Constructing equivalent Norton circuits and comparing measured and calculated values of load current IL and voltage VAB.
3) Connecting resistor circuits in delta and star configurations, measuring voltages and currents, and calculating power to verify delta-star transformations.
Closed loop control of boost coverter for a led load connected photovoltaic s...Sangeeth Soman
The document describes a method for generating electricity from solar power to power an LED light using solar panels, a DC-DC converter, an inverter, and a microcontroller. Solar panels collect solar energy from sunlight as variable DC power, which is converted to fixed DC by a DC-DC converter and then converted to AC by an inverter to power the LED light. A microcontroller governs the embedded system, while batteries provide backup power when solar power is insufficient.
A novel high-precision curvature-compensated CMOS bandgap reference without u...IJRES Journal
A novel high-precision curvature-compensated bandgap reference (BGR) without using op-amp
is presented in this paper. It is based on second-order curvature correction principle, which is a weighted sum of
two voltage curves which have opposite curvature characteristic. One voltage curve is achieved by first-order
curvature-compensated bandgap reference (FCBGR) without using op-amp and the other found by using W
function is achieved by utilizing a positive temperature coefficient (TC) exponential current and a linear
negative TC current to flow a linear resistor. The exponential current is gained by using anegative TC voltage to
control a MOSFET in sub-threshold region. In the temperature ranging from -40℃ to 125℃, experimental
results implemented with SMIC 0.18μm CMOS process demonstrate that the presented BGR can achieve a TC
as low as 2.2 ppm/℃ and power-supply rejection ratio(PSRR)is -69 dB without any filtering capacitor at 2.0 V.
While the range of the supply voltage is from 1.7 to 3.0 V, the output voltage line regulation is about1 mV/ V
and the maximum TC is 3.4 ppm/℃.
Lab 7 diode with operational amplifiers by kehali b. haileselassie and koukehali Haileselassie
This document describes an electronics experiment involving diodes and operational amplifiers. The experiment consisted of two parts: 1) using diodes in a circuit to multiply DC voltage output, and 2) using a diode and op-amp circuit as a logarithmic converter. Key results showed the DC output voltage increasing as the load resistance decreased in part 1. Part 2 results demonstrated the output voltage varying logarithmically with the input voltage as expected based on diode characteristics. The conclusion discusses applications of diode multipliers and logarithmic converters in electrical and electronics circuits.
This document describes the implementation of a bandgap reference circuit. It was designed by M. Lingadhar Reddy under the guidance of Mr. G. Shiva Kumar at GITAM University in Hyderabad, India from 2013-2015. The document outlines the basic operation of a bandgap reference circuit, which produces a reference voltage that is stable over changes in temperature, supply voltage, and process parameters. It discusses the tool and technology used, different approaches to bandgap references, and details the design and simulation results of a two-stage CMOS operational amplifier and final bandgap reference circuit implemented in a 90nm CMOS technology using Cadence Virtuoso.
Multilevel inverters offers less distortion and less electro-magnetic interference compared with other conventional inverters and hence, it can be used in many industrial and commercial applications. This paper analyze the performance of the modified single phase seven level symmetrical inverter using minimum number of switches. The proposed topology consists of six switches and two dc sources, and produces seven level output voltage waveform during symmetric operation. The cost and size of the propsoed inverter minimum as it uses minimum number of components, The performance of the proposed multilevel inverter is analysed for different switching angles and the corresponding simulation results are presented. The simulation of the proposed inverter is carried out using MATLAB/Simulink software.
APPLICATIONS OF FLOATING-GATE MOSFET IN THE DESIGN OF INVERTER AND RING OSCIL...elelijjournal
This paper presents the application of floating-gate MOSFET (FGMOS) in the design of low voltage and
high speed digital circuits wherein threshold voltage tunability of FGMOS has been exploited to enhance
the performance of inverter in terms of various parameters like switching threshold voltage, noise margins,
propagation delay and energy delay product. It has been observed that by varying the bias voltage in
FGMOS, the voltage transfer characteristics can be altered that result in lowering of switching threshold
voltage, increased noise margins, reduced propagation delay and less energy delay product as compared to
the standard CMOS inverter. This paper also demonstrates the design of ring oscillator using FGMOS and
it has been found that FGMOS based ring oscillator exhibits higher frequency of oscillation as compared to
its CMOS counterpart. The performance of these circuits has been verified through PSpice simulations
carried out using level 7 parameters in 0.13 µm CMOS technology with a supply voltage of 1 V.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
This manual is very much useful for PG students belongs to ME Power Electronics and Drives
By
M.MURUGANANDAM. M.E.,(Ph.D).,MIEEE.,MISTE,
Assistant Professor & Head / EIE,
Muthayammal Engineering College,
Rasipuram,
Namakkal-637 408.
Cell No: 9965768327
Control of Grid- Interfacing Inverters with Integrated Voltage Unbalance Corr...IOSR Journals
This document describes a control scheme for grid-interfacing inverters to correct voltage unbalance at the point of common coupling (POC). It proposes adding a function to intentionally regulate negative sequence currents in order to minimize negative sequence voltage at the POC. The control scheme uses symmetric sequence decomposition with a multi-variable filter to detect positive and negative sequence voltages. It then determines the desired negative sequence current based on the voltage unbalance factor. Experimental results on a laboratory prototype show the inverter is able to reduce the negative sequence voltage at the POC by absorbing a small negative sequence current from the grid.
A Sub-1-V 15-ppm/ C CMOS Band gap Voltage Referenceijsrd.com
A sub-1-V CMOS band gap voltage reference requiring no low threshold voltage device is introduced in this paper. In a CMOS technology with vthn=vthp=0 9 V at 0 C, the minimum supply voltage of the proposed voltage reference is 0.98 V, and the maximum supply current is 18 A. A temperature coefficient of 15 ppm/ C from 0 C to 100 C is recorded after trimming. The active area of the circuit is about 0.24 mm2.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology.
A new cascaded multilevel inverter with less no of switcheseSAT Journals
Abstract In this paper proposed a new topology for cascaded multi level inverters. This structure consists of series connection of proposed basic unit blocks which are built with both unidirectional and bidirectional switches. The proposed structure has some advantages including: reduction in the number of switches and driver circuits, cost and installation area. Three algorithms for determination of dc voltages sources’ magnitudes have also been proposed. The algorithms can produce all odd and even levels at the output voltage the proposed structure also has fewer dc voltage sources variety and less maximum blocking voltage of switches compared to conventional inverters. The capability of proposed structure This paper propose a new topology for cascaded multilevel in producing all odd and even output voltage levels is proved by simulation result for a 21-level inverter. Keywords: Multilevel inverters, symmetric multilevel, asymmetric multilevel
1) The document describes the theoretical operation of log-antilog single quadrant multipliers. Log amplifiers produce an output proportional to the logarithm of the input voltage, while antilog amplifiers produce an output proportional to the exponential of the input.
2) By passing the sum of the outputs of two log amplifiers into an antilog amplifier, the circuit can produce an output equal to the product of the two original input voltages, thus performing multiplication.
3) The key stages are taking the logarithm of each input, adding the results, then taking the exponential to obtain the final product. This allows multiplication to be performed using simpler addition and exponential operations.
There are three basic configurations of single-stage FET amplifiers: common-source, source-follower, and common-gate. MOSFETs are commonly used as load devices in integrated circuits due to their small size. The chapter will analyze the characteristics and applications of each configuration, which form building blocks for more complex amplifiers. It will also discuss multistage configurations and JFET amplifiers.
Enhancing phase margin of ota using self biasingelelijjournal
In this paper, a new adaptive biased low voltage cascode current mirror with high input/output swing is presented. This advantage is achieved using a self-biasing transistor and compensation resistor. The new structure profits from better input dynamic range and lower supply voltage without frequency response limitation and increasing input impedance. Also, the proposed current mirror is incorporated in folded cascode amplifier in order to enhance its phase-margin. The simulation results in 0.18 μm CMOS technology confirm the theoretical analysis and exhibits 478μA linear input/output current swing and a
phase-margin enhancement of 12o for the proposed current mirror and amplifier compared to the conventional circuits, respectively
1. The document describes an experiment to measure and compare current and voltage in series and parallel circuits using resistors and circuit boards. Resistors in series experience the same current but their voltages add up to the total. Resistors in parallel experience the same voltage but their currents combine.
2. The experiment involves building series and parallel circuits with different resistor combinations and measuring current, voltage, and calculating equivalent resistance using Ohm's Law. Data is recorded and analyzed to determine relationships between voltages in series and parallel circuits.
Power Quality Indices for Electrical Power Systems under Non-Stationary Distu...KonstantinosChristod10
This paper presents a methodology to evaluate power quality indices using Wavelet Packet Transform in electrical power systems, in the presence of harmonics, under stationary, non-stationary and short-circuit occurrence conditions, in order to achieve efficient monitoring of power systems. Results on several test systems and various disturbances simulated by Matlab/Simulink demonstrate the effectiveness and robustness of the proposed method.
High Power Density Multi-Mosfet-Based Series Resonant Inverter for Induction ...IAES-IJPEDS
Induction heating application uses uniquely high frequency series resonant
inverter for achieving high conversion efficiency. The proposed work focus
on improving the practical constraints in requiring the cooling arrangements
necessary for switching devices used in resonant inverter due to higher
switching and conduction losses. By introducing high frequency Multi-
MOSFET based series resonant inverter for the application of induction
heating with the following merits such as minimum switching and
conduction losses using low voltage grade of automotive MOSFET’s and
higher conversion efficiency with high frequency operation. By adding series
combination of low voltage rated Multi MOSFET switches, temperature
variation according to the on-state resistance issues can be avoided by
sharing the voltage across the switches depends on the number of switches
connected in the bridge circuit without comprising existing systems
performance parameters such as THD, power factor and output power.
Simulation results also presents to verify that the proposed system achieve
higher converter efficiency.
This paper presents a low-voltage CMOS voltage-mode divider circuit that can operate with a low supply voltage and low power dissipation. The proposed divider circuit was fabricated in a 0.5 μm CMOS process and can operate with a 2.5 V supply voltage. Experimental results show the divider has less than 1.18% linearity error and consumes only 102 μW of power. The divider circuit is also used to realize a pseudo-exponential function generator with a 15 dB output dynamic range and less than 1.54% linear error. Both circuits are suitable for analog signal processing applications requiring low voltage and low power operation.
Low Voltage Temperature Sensor Front End Project ReportSatyabh Mishra
This document presents a low voltage, low power CMOS temperature sensor circuit. It uses subthreshold MOSFETs and compensates a PTAT (proportional to absolute temperature) current source with the gate-source voltage of a subthreshold MOSFET. The circuit was designed using a standard 0.5-μm CMOS process and exhibits an average output voltage of 106mV with a temperature coefficient of 511ppm/°C over a range of 0-120°C. Simulation results show the output voltage varies by 79mV over a supply voltage range of 1.2-2V and 4mV peak-to-peak for temperature variations from 0-120°C. The circuit achieves a temperature sensitivity of
This document provides instructions for an experiment involving Kirchhoff's Current and Voltage Laws. The objectives are to learn and apply Kirchhoff's Current Law and Kirchhoff's Voltage Law, obtain further practice with electrical measurements, and compare results with calculations and simulations. The experiment uses a circuit with four resistors to apply the two Kirchhoff's Laws and calculate voltages and currents at various points. Students are instructed to use the laws to derive equations relating node voltages, solve them through calculation and simulation, measure resistor values, and compare results.
The document summarizes an experiment on verifying Norton's theorem and delta-star transformations. Key steps include:
1) Measuring resistance values of circuit components and calculating Norton parameters like internal resistance RN and current IN.
2) Constructing equivalent Norton circuits and comparing measured and calculated values of load current IL and voltage VAB.
3) Connecting resistor circuits in delta and star configurations, measuring voltages and currents, and calculating power to verify delta-star transformations.
Closed loop control of boost coverter for a led load connected photovoltaic s...Sangeeth Soman
The document describes a method for generating electricity from solar power to power an LED light using solar panels, a DC-DC converter, an inverter, and a microcontroller. Solar panels collect solar energy from sunlight as variable DC power, which is converted to fixed DC by a DC-DC converter and then converted to AC by an inverter to power the LED light. A microcontroller governs the embedded system, while batteries provide backup power when solar power is insufficient.
A novel high-precision curvature-compensated CMOS bandgap reference without u...IJRES Journal
A novel high-precision curvature-compensated bandgap reference (BGR) without using op-amp
is presented in this paper. It is based on second-order curvature correction principle, which is a weighted sum of
two voltage curves which have opposite curvature characteristic. One voltage curve is achieved by first-order
curvature-compensated bandgap reference (FCBGR) without using op-amp and the other found by using W
function is achieved by utilizing a positive temperature coefficient (TC) exponential current and a linear
negative TC current to flow a linear resistor. The exponential current is gained by using anegative TC voltage to
control a MOSFET in sub-threshold region. In the temperature ranging from -40℃ to 125℃, experimental
results implemented with SMIC 0.18μm CMOS process demonstrate that the presented BGR can achieve a TC
as low as 2.2 ppm/℃ and power-supply rejection ratio(PSRR)is -69 dB without any filtering capacitor at 2.0 V.
While the range of the supply voltage is from 1.7 to 3.0 V, the output voltage line regulation is about1 mV/ V
and the maximum TC is 3.4 ppm/℃.
Lab 7 diode with operational amplifiers by kehali b. haileselassie and koukehali Haileselassie
This document describes an electronics experiment involving diodes and operational amplifiers. The experiment consisted of two parts: 1) using diodes in a circuit to multiply DC voltage output, and 2) using a diode and op-amp circuit as a logarithmic converter. Key results showed the DC output voltage increasing as the load resistance decreased in part 1. Part 2 results demonstrated the output voltage varying logarithmically with the input voltage as expected based on diode characteristics. The conclusion discusses applications of diode multipliers and logarithmic converters in electrical and electronics circuits.
This document describes the implementation of a bandgap reference circuit. It was designed by M. Lingadhar Reddy under the guidance of Mr. G. Shiva Kumar at GITAM University in Hyderabad, India from 2013-2015. The document outlines the basic operation of a bandgap reference circuit, which produces a reference voltage that is stable over changes in temperature, supply voltage, and process parameters. It discusses the tool and technology used, different approaches to bandgap references, and details the design and simulation results of a two-stage CMOS operational amplifier and final bandgap reference circuit implemented in a 90nm CMOS technology using Cadence Virtuoso.
Multilevel inverters offers less distortion and less electro-magnetic interference compared with other conventional inverters and hence, it can be used in many industrial and commercial applications. This paper analyze the performance of the modified single phase seven level symmetrical inverter using minimum number of switches. The proposed topology consists of six switches and two dc sources, and produces seven level output voltage waveform during symmetric operation. The cost and size of the propsoed inverter minimum as it uses minimum number of components, The performance of the proposed multilevel inverter is analysed for different switching angles and the corresponding simulation results are presented. The simulation of the proposed inverter is carried out using MATLAB/Simulink software.
APPLICATIONS OF FLOATING-GATE MOSFET IN THE DESIGN OF INVERTER AND RING OSCIL...elelijjournal
This paper presents the application of floating-gate MOSFET (FGMOS) in the design of low voltage and
high speed digital circuits wherein threshold voltage tunability of FGMOS has been exploited to enhance
the performance of inverter in terms of various parameters like switching threshold voltage, noise margins,
propagation delay and energy delay product. It has been observed that by varying the bias voltage in
FGMOS, the voltage transfer characteristics can be altered that result in lowering of switching threshold
voltage, increased noise margins, reduced propagation delay and less energy delay product as compared to
the standard CMOS inverter. This paper also demonstrates the design of ring oscillator using FGMOS and
it has been found that FGMOS based ring oscillator exhibits higher frequency of oscillation as compared to
its CMOS counterpart. The performance of these circuits has been verified through PSpice simulations
carried out using level 7 parameters in 0.13 µm CMOS technology with a supply voltage of 1 V.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
This manual is very much useful for PG students belongs to ME Power Electronics and Drives
By
M.MURUGANANDAM. M.E.,(Ph.D).,MIEEE.,MISTE,
Assistant Professor & Head / EIE,
Muthayammal Engineering College,
Rasipuram,
Namakkal-637 408.
Cell No: 9965768327
Control of Grid- Interfacing Inverters with Integrated Voltage Unbalance Corr...IOSR Journals
This document describes a control scheme for grid-interfacing inverters to correct voltage unbalance at the point of common coupling (POC). It proposes adding a function to intentionally regulate negative sequence currents in order to minimize negative sequence voltage at the POC. The control scheme uses symmetric sequence decomposition with a multi-variable filter to detect positive and negative sequence voltages. It then determines the desired negative sequence current based on the voltage unbalance factor. Experimental results on a laboratory prototype show the inverter is able to reduce the negative sequence voltage at the POC by absorbing a small negative sequence current from the grid.
A Sub-1-V 15-ppm/ C CMOS Band gap Voltage Referenceijsrd.com
A sub-1-V CMOS band gap voltage reference requiring no low threshold voltage device is introduced in this paper. In a CMOS technology with vthn=vthp=0 9 V at 0 C, the minimum supply voltage of the proposed voltage reference is 0.98 V, and the maximum supply current is 18 A. A temperature coefficient of 15 ppm/ C from 0 C to 100 C is recorded after trimming. The active area of the circuit is about 0.24 mm2.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology.
A new cascaded multilevel inverter with less no of switcheseSAT Journals
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Accident detection system project report.pdfKamal Acharya
The Rapid growth of technology and infrastructure has made our lives easier. The
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Optimization of Temperature Coefficient and Noise Analysis of MOSFET- Only Voltage Reference Circuit
1. Arathi.p et al.. Int. Journal of Engineering Research and Application www.ijera.com
ISSN : 2248-9622, Vol. 6, Issue 9, ( Part -2) September 2016, pp.06-12
www.ijera.com 6|P a g e
Optimization of Temperature Coefficient and Noise Analysis of
MOSFET- Only Voltage Reference Circuit
Arathi.p1
, Smt. Lekha Pankaj2
, Dr.Shahul Hameed3
1
ECE dept, AWH Engineering College, kozhikode, kerala.
2
Associate Professor: ECE dept, AWH Engineering College, Kozhikode
3
Associate Professo: ECE dept, TKM College Of Engineering, kollam
ABSTRACT
The optimization of temperature coefficient and comparison of output noise of two MOSFET only voltage
references are introduced. The circuit behavior is analytically described and the performance of the proposed
circuits are confirmed through 180nm CMOS technology in virtuoso and the simulation results are presented.
Both the circuits can be operated with supply voltage varies from 0.5-1.2V.The output voltage references varied
over a temperature range of -25℃ to 50℃.
I. INTRODUCTION
The widespread use of battery-operated
systems, the relatively slow progress of battery
performance/cost ratio and the need to minimize
simple maintenance procedures, such as battery
replacement, are pushing the design of very low
voltage and low power systems, both digital and
analog. Here we focus on a ubiquitous component
of such systems, the voltage reference generator,
which in turn has to be “power scaled”, in order to
be able to operate with a very small fraction of the
total power budget.
Voltage references are fundamental circuit
blocks ubiquitously used in analog, mixed-signal,
RF and digital systems, including memories.
Mobile and energy harvesting applications require
ultra low power designs, which should be extended
to all circuits, including the analog ones. Resistor-
less analog blocks have the advantage of
implementation in standard digital processes.
Basically, voltage references can be divided into
three fundamental functions: the generation of two
voltages (or currents), one proportional and the
other complementary to absolute temperature
(PTAT and CTAT, respectively) and biasing.
In this paper we propose two MOSFET
only voltage references, optimizing their
temperature coefficient and performing the
comparison of noise analysis. The voltage
reference is analysed over a temperature range of -
25℃ to 50℃.
The text is organized as follows: Section 2
presents the proposed system. Different types of
noises and noise analysis of voltage reference
circuits is proposed in section 3 ,followed by the
simulation results of output voltage, noise analysis
and layout of one of the proposed voltage reference
are discussed in section 4. To conclude, we
analysed the performance comparison of both the
voltage references.
II. VOLTAGE REFERENCE USING
SELF CASCODE PTAT
GENERATOR
A voltage reference based on the sum of
two almost linear temperature dependent terms is
proposed here. A threshold voltage extractor
provides the CTAT voltage, and the PTAT voltage
is generated by two PMOS unbalanced differential
pairs operating in weak inversion. The sum of these
two linear terms results in a significant reduction of
the thermal coefficient over a wide temperature
range.
In ACM model,
The relationship between current and
voltage is given by
𝑉𝑝−𝑉𝑠(𝐷)
∅𝑡
= F(if(r)) = 1 + if(r) – 2+ ln ( 1 + 𝑖f(r) -1)
(1)
Where VS and VD are the source and drain
voltages (all terminal voltages are referenced to the
transistor bulk), and VP is the pinch-off voltage,
approximated by
VP ≈
𝑉𝐺 – 𝑉𝑇𝑂
𝑛
(2)
Where VT0 the threshold voltage for zero
bulk bias. The first term (the square root one) in the
right side of (1) is related to the drift component of
the drain current, being predominant under strong
inversion. The last term (the logarithmic one) is
related to the diffusion component, being
predominant under weak inversion operation. In
forward saturation IF≫IR and consequently ID ≅IF
= SISQif.
RESEARCH ARTICLE OPEN ACCESS
2. Arathi.p et al.. Int. Journal of Engineering Research and Application www.ijera.com
ISSN : 2248-9622, Vol. 6, Issue 9, ( Part -2) September 2016, pp.06-12
www.ijera.com 7|P a g e
A. VT0 Extractor
The proposed VT0 extractor circuit,
shown in Figure 1.From this proposed circuit we
are extracting the threshold voltage of transistors
M1 and M2. A saturated nMOS-FET with
grounded source and operating under a constant
inversion level equal to 3 (if = 3) will have a gate
voltage VG equal to the threshold voltage VT0 from
(1) and (2). It happens because under these
conditions, the right side of (1) becomes zero. Here
M1 is made to operate in the moderate inversion
region. M2 is designed with the same geometry of
M1, kept saturated too and sharing the same gate
voltage, but with a source voltage different from
zero. Using (1) and (2) for M2, knowing that VG2 =
VG1 = VT0, leads to (3)
Fig.1. Threshold voltage extractor
─Vs2 = ∅t F (if2) (3)
So, we can conclude that if the resulting
M1 current ID1 is also used to control the drain
current ID2 (through the M5-M6 current mirror),
M2 also operates under a constant inversion level,
making F(if2) constant. Thus, if a voltage
proportional to ∅t is attached to the source terminal
of M2, with the right proportionality factor F (if2)
adjusted (using the current mirror aspect relation
K1), the equality of (3) can be satisfied. A non-zero
equilibrium point is then reached in this circuit, that
keeps VG1 = VG2 = VT0 for any temperature. Since
M2 operates with higher source voltage than M1,
its inversion level has to be lower, or F(if2) < 0. So
in this circuit M2 operates in the weak inversion
region. The temperature dependence of the
threshold voltage VT0 can be approximated by the
linear equation (4).
VTO(T) = VTO(nom) + kT(T – Tnom) (4)
Where T is the absolute
temperature,VT0(nom) is the threshold voltage at
the nominal temperature Tnom and KT is the thermal
coefficient of the threshold voltage.
B. Self Cascode Ptat Generator
To generate a PTAT voltage independent
of process parameters a self-cascode MOSFET,
introduced by Vittoz in 1977 is shown in Fig.2.
Transistor M3 has higher drain current thanM4 but
smaller aspect ratio which leads to different
inversion levels on each transistor. Transistor M4
must be in saturation while M3 can be in saturation
or in triode. The difference between their gate-
source voltages appear across the drain-source
terminals of M3.
Fig. 2. Self Cascode PTAT Generator
This voltage is proportional to the thermal
voltage. It is given by
VSC = VDS3 = ∅t [F(if3) – F(iif4)] (5)
Usually both transistors operate in weak
inversion, but (5) shows that as long as the
inversion levels of both transistors are kept
constant over temperature, they generate an ideal
PTAT voltage under any inversion level. This can
be achieved by biasing them with current I4 =
K3ISQ, where K3 is constant with process and
temperature. (5) then becomes
VSC = ∅t [F( K3÷S3)(K2 +1) – F(K3÷S4)] (6)
PTAT voltage generated by the self-
cascode MOSFET depends only on geometrical
factors, and not on fabrication process parameters.
C. Unbalanced differential pair ptat generator
From unbalanced differential pair PTAT
generator introduced by Tsividis in 1978, that
operates in weak inversion, we are generating the
PTAT voltage. Here K4 and K5 are the aspect ratio
relations of M8-M9 and M11-M10, respectively.
Transistors M8 and M9 share the same
source connection, and the PTAT voltage develops
across the two gates. By using the ACM model, it
is possible to extend the operation of this circuit to
all inversion levels, as was done for the self-
cascode structure. Assuming that all transistors are
in saturation and using (1) and (2), the PTAT
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voltage generated by the differential pair VDIFF is
given by (7).
Fig. 3. Differential pair PTAT generator
VDIFF = VG9 ─VG8 = n ∅t [F(if 9) – F(iif 8)] (7)
Since the M8-M9 pair is biased by the
M10-M11 mirror, if9 = if8 = K4K5. This circuit
generates a PTAT voltage independent of the
inversion region, as long as the inversion levels if8
and if9 themselves are kept constant. This can be
achieved by biasing the differential pair with a
current IDIFF = K6ISQ, that can be obtained by
mirroring the current ID1 of the VT0 extractor of Eq.
(7) then becomes
VDIFF = n∅ t [F((K4K5K6÷(1+K4)S8)) ─ F((K6÷
(1+K4) S8))] (8)
Since sub threshold slope n varies slightly
with process and temperature, this voltage is less
ideal than that generated by the self-cascode (6).
D. Voltage Reference Circuit
The proposed voltage reference can be
seen in Figure.4 which composed of transistors
M1-M7 which forms the threshold voltage
extractor, transistors M3-M4, the self-cascode
PTAT generator and the unbalanced differential
pairs which are made of transistors M8-M17, and
they are sized exactly the same to produce a total
PTAT voltage that is twice that of a single cell.
Since we choose if1 = 3, ID1 = 3S1ISQ, and this
current is mirrored to bias the rest of the circuit
through PMOS transistors M5-M7, M12 and
M17.[9]
The reference voltage VREF, at the gate of
M13, is the sum of a CTAT term given by (4) and
twice the PTAT term given by (7),
VREF = VG1 +2VDIFF =VT0+2 n∅t [F(if 9) – F(iif 8)]
(9)
Fig 4. Proposed voltage reference circuit
III. CMOS VOLTAGE REFERENCE
USING CURRENT COMBINATION
CIRCUIT
The proposed circuit consist of three parts.
The first part is composed of transistors M1,
M3and R1for generating the current with negative
temperature coefficient (ICTAT), second part is
composed of transistors M2and R2forgenerating
the current with a positive temperaturecoefficient (
IPTAT) and the last part is current mirror
circuitwhich is consisted of transistors M4, M5and
M6. The M4isdefined for summing the current of
ICTATand IPTATwhich is independent of temperature
and mirrored to the M6for generating the voltage
reference (Vref).
Transistors M1 and M3 are defined to
operate in saturation and weak inversion region,
respectively. Then, the drain current of M1 is given
by
IDM1 =
1
2
mp Cox
𝑊
𝐿
(VGS – Vth)2
(10)
The gate-source voltage of M3 (VgsM3) is given by
Vgs M3 = nVTln [Ids3 L3 ÷It W3] + Vth (11)
Where VT is the thermal voltage,
VT =
𝑘𝑇
𝑞
(12)
Fig.5. Voltage reference circuit using current
combination circuit
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Where kis the Boltzmann’s constant (1.38
x10-23 J/K), qis electric charge (1.6 x10-
19C)and
Tis absolutetemperature. The drain current of
M3which is in termof exponential can be expressed
as
Ids3 = It
𝑊3
𝐿3
eq(V
gsM3 – V
th) ÷ nkT (13)
Where Vthis the threshold voltage, W3and
L3is channel width and channel length of MOS
transistor, respectively
It = 2nmn cox (kT/q)2
(14)
Where Itis the saturation current of the
MOS transistor, n is the slope factor, Coxis the gate
oxide capacitance per unit area and 𝜇is the electron
mobility, Substituting equations of VT, Ids3 and It
intoVgs M3 , then differentiation can be written as
𝜕𝑉𝑔𝑠𝑀 3
𝜕𝑇
=
𝑉𝑔𝑠𝑀3
𝑇
− 2𝑛
𝑘
𝑞
(15)
The Vgsof MOS transistor M3will be
decreased when increasing the temperature which
is called VCTATand the ICTATis expressed by
ICTAT =
𝑉𝑔𝑠𝑀3
𝑅1
(16)
Transistor M2is operates in weak
inversion region and VR1= VGS2+ VR2.
Therefore the voltage drop across R2can be written
as
VR2 = nVTln m (17)
IR2 is proportional to VTand m is aspect
ratio of MOS transistors M2 and M3
IPTAT = IR2 =
𝑛𝐾𝑇
𝑅2𝑞
ln 𝑚 (18)
The current mirror circuit is composed of
transistors M4, M5 and M6. The MOS transistor
M4 is defined for summing the current of ICTATand
IPTAT which is independent of temperature, can be
written as
Iref = ICTAT + IPTAT (19)
Substituting IPTAT and ICTAT into Iref can be obtained
Iref = (20)
The current Irefis mirrored from M4 to M6,
then the reference voltage can be written as
Vref = Iref R3 (21)
By adjusting the resistance value of R3,
we will be able to achieve low temperature
coefficient [12].
IV. NOISE ANALYSIS
Thermal noise results from the use of the
feedback resistors, MOSFET and bipolar
transistors. Flicker noise is exclusively introduced
by the MOSFET transistors, where it is directly
proportional to their transconductance and to the
squared closed-loop gain. Shot noise results from
the use of bipolar transistors to generate the output
bandgap voltage reference, and increases
proportionally to the number of charges passing
through the junctions. In this work, shot noise can
be negligible because of absence of bipolar
transistors. Not only thermal and flicker noise is
present in resistors and MOSFET transistors, but
the bipolar transistors also introduce shot noise due
to their potential barriers, along with thermal noise.
Noise reduction effort must target specially the
bandgap core. In the remaining blocks it is
important to use large transistors and minimize the
use of resistors in order to reduce flicker and
thermal noise.
V. RESULTS
In this section results of the proposed
voltage reference circuits and the plot of the noise
analysis of two different voltage reference circuits
are presented. These circuits are implemented in
cadence software. The performance of the proposed
circuits is analysed through 180nm CMOS
technology in virtuoso. Both the output voltage
reference is varied over a temperature range of -
25℃ to 50℃.
A. Simulation Results Of Voltage Reference
Circuit Using Self Cascode Ptat Generator
Figure 6 shows the simulation result of
VRC using self cascade PTAT generator. The
design methodology and simulation results for a
180nm CMOS process are presented. It allows a
reference voltage of 632mV achieving a
temperature coefficient of 72ppm/℃ for the
temperature range of -25℃ to 50℃.
Fig. 6. Simulation result of VRC using self
cascaode PTAT generator
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B. Simulation results of voltage reference circuit
using current combination circuit
Figure 7 shows the simulation result of
VRC using current combination circuit. The design
methodology and simulation results for a 180nm
CMOS process are presented. It allows a reference
voltage of 519mV achieving a temperature
coefficient of 7ppm/℃ for the temperature range of
-25℃ to 50℃.
Fig. 7. Simulation result of VRC using current
combination circuit
C. Simulation result of iptat
Fig. 8. Simulation result of IPTAT
D. Simulation result of ictat
Fig.9. Simulation result of ICTAT
E. Simulation results of noise analysis of vrc
using self cascode ptat generator
Fig.10. Noise analysis of VRC using self cascode
PTAT generator
F. Simulation Results Of Noise Analysis Of Vrc
Using Current Combination Circuit
Fig.11. Noise analysis of VRC using current
combination circuit
Table I Performance Comparison
VI. CONCLUSION
This paper focuses on the optimization of
temperature coefficient and noise analysis of
voltage reference circuits. From the simulation
results, it is clear that the temperature coefficient
can be reduced to a great extend in one voltage
VRC using
self cascade
PTAT
generator
VRC using
current
combinatio
n circuit
Technology 180 nm 180nm
Temperature -25 to 50℃ -25 to 50℃
VREF 632mV 519mV
Temperature
coefficient
72 ppm/℃ 7 ppm/℃
Vdd 0.7-1.2V 0.5-1.2V
Output Noise 2.5-10Pv2
/Hz
@10-1000Hz
1.15-
1.45Fv2
/Hz
@10-
1000Hz
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reference. When comparing the noise analysis of
both the circuits, noise of voltage reference circuit
using self cascode PTAT generator is more.
Therefore voltage reference circuit using current
combination is better in terms of both temperature
coefficient and noise.
ACKNOWLEDGMENT
The joy and satisfaction that accompany
the successful completion of any task would be
incomplete without being grateful to those who
made it possible. I express my whole hearted
thanks to Smt. Lekha Pankaj, HOD, Electronics
and Communication Department, AWH
engineering college, who is my guide, for her
invaluable help and suggestions.
I am highly indebted to Mr. George. M.
Joseph, Asst Prof, Sri chithirathirunnal College of
Engineering, Trivandrum for his support as well as
for providing necessary information regarding the
project. I also thank Dr Shahul Hameed,
Professor, TKM College of Engineering for his co-
operation and valuable suggestions during the
project period. I would like to extend my sincere
thanks to the Principal, TKM College of
Engineering for allowing me to use the VLSI
Design Lab facilities provided there.It is with great
pleasure that I extend my gratitude to all my
teachers and friends who have given me their
whole hearted support throughout. I also thank our
Principal Mr. Shahir V.K for all his support and
help.
I would like to express my gratitude
towards my parents for their kind co-operation and
encouragement. Above all I would like to thank
God, Almighty, for having showered his blessings
on me.
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