This document provides specifications for the Toshiba 2SK2886 field effect transistor. It is a silicon n-channel MOS transistor intended for applications such as chopper regulators, DC-DC converters, and motor drives. Key specifications include a maximum drain-source ON resistance of 14 mΩ and a minimum forward transfer admittance of 31 S. The document also lists the transistor's absolute maximum ratings, thermal characteristics, electrical characteristics, and source-drain ratings and characteristics.