This document provides information about the MUSES01, a dual J-FET input, high quality audio operational amplifier. It is optimized for high-end audio applications and features excellent sound quality. Key specifications include an input offset voltage of 0.8mV typical and 5mV maximum, input bias current of 200pA typical and 800pA maximum, and voltage gain of 105dB typical. The amplifier has a bipolar technology, DIP8 package outline, and pin configuration shown. Application notes provide guidance on power dissipation and thermal design.

1. MUSES01
High Quality Audio , J-FET Input,
Dual Operational Amplifier
The MUSES01 is a dual J-FET input high quality audio operational amplifier, which is optimized for high-end audio and
professional audio applications with advanced circuitry and layout, unique material and assembled technology by
skilled-craftwork.
It is the best for audio preamplifiers, active filters, and line amplifiers with excellent sound.
FEATURES
●Operating Voltage Vopr=±9V to ±16V
●Output noise 9.5nV/√Hz at f=1kHz
●Input Offset Voltage 0.8mV typ. 5mV max.
●Input Bias Current 200pA typ. 800pA max. at Ta=25°C
●Voltage Gain 105dB typ.
●Slew Rate 12V/μs typ.
●Bipolar Technology
●Package Outline DIP8
PIN CONFIGURATION PACKAGE OUTLINE
PIN FUNCTION
1 8 1. A OUTPUT
2. A -INPUT
2 7 3. A +INPUT
-+
4. V-
3 6
+ - 5. B +INPUT MUSES01D
6. B -INPUT
4 5
7. B OUTPUT
8.V+
MUSES and this logo are trademarks of New Japan Radio Co., Ltd.
Ver.2009-12-18 -1-

2. MUSES01
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL RATING UNIT
Supply Voltage V+/V- ±18 V
Common Mode Input Voltage VICM ±15 (Note1) V
Differential Input Voltage VID ±30 V
Power Dissipation PD 910 mW
Output Current IO ±25 mA
Operating Temperature Range T opr -40 to +85 °C
Storage Temperature Range T stg -50 to +150 °C
(Note1) For supply Voltages less than ±15 V, the maximum input voltage is equal to the Supply Voltage.
RECOMMENDED OPERATING CONDITION (Ta=25°C)
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Supply Voltage V+/V- - ±9 - ±16 V
ELECTRIC CHARACTERISTICS
DC CHARACTERISTICS (V+/V-=±15V, Ta=25°C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Operating Current I cc No Signal, R L =∞ - 8.5 12.0 mA
Input Offset Voltage V IO Rs≤10kΩ (Note2, 3) - 0.8 5.0 mV
Input Bias Current IB (Note2, 3) - 200 800 pA
Input Offset Current I IO (Note2, 3) - 100 400 pA
Voltage Gain AV R L ≥2kΩ, V o =±10V 90 105 - dB
Common Mode Rejection Ratio CMR V ICM =±8V (Note4) 60 75 - dB
+ -
V /V =±9.0 to ±16.0V
Supply Voltage Rejection Ratio SVR 70 83 - dB
(Note2, 5)
Max Output Voltage 1 V OM1 R L =10kΩ ±12 ±13.5 - V
Max Output Voltage 2 V OM2 R L =2kΩ ±10 ±12.5 - V
Input Common Mode Voltage
V ICM CMR≥60dB ±8 ±9.5 - V
Range
(Note2) Measured at VICM=0V
(Note3) Written by the absolute rate.
(Note4) CMR is calculated by specified change in offset voltage. (VICM=0V to +8V and VICM=0V to −8V)
(Note5) SVR is calculated by specified change in offset voltage. (V+/V−=±9V to ±16V)
-2- Ver.2009-12-18

3. MUSES01
AC CHARACTERISTICS (V+/V-=±15V, Ta=25°C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gain Bandwidth Product GB f=10kHz - 3.3 - MHz
AV=+100, RS=100Ω,
Unity Gain Frequency fT - 3.0 - MHz
RL=2kΩ, CL=10pF
AV=+100, RS=100Ω,
Phase Margin φM - 60 - deg
RL=2kΩ,CL=10pF
f=1kHz, AV=+100,
Input Noise Voltage1 V NI - 9.5 - nV/√Hz
RS=100Ω
RIAA, RS =2.2kΩ,
Input Noise Voltage2 V N2 - 1.2 3.0 μVrms
30kHz LPF
f=1kHz, AV=+10,
Total Harmonic Distortion THD - 0.002 - %
RL=2kΩ, Vo=5Vrms
f=1kHz, AV=-+100, RS=1kΩ,
Channel Separation CS - 150 - dB
RL=2kΩ
AV=1, VIN=2Vp-p,
Positive Slew Rate +SR - 12 - V/μs
RL=2kΩ, CL=10pF
AV=1, VIN=2Vp-p,
Negative Slew Rate -SR - 13 - V/μs
RL=2kΩ, CL=10pF
Ver.2009-12-18 -3-

4. MUSES01
Application Notes
•Package Power, Power Dissipation and Output Power
IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called
Power Dissipation PD. The dependence of the MUSES01 PD on ambient temperature is shown in Fig 1. The plots are
depended on following two points. The first is PD on ambient temperature 25°C, which is the maximum power dissipation.
The second is 0W, which means that the IC cannot radiate any more. Conforming the maximum junction temperature
Tjmax to the storage temperature Tstg derives this point. Fig.1 is drawn by connecting those points and conforming the PD
lower than 25°C to it on 25°C. The PD is shown following formula as a function of the ambient temperature between those
points.
Tjmax - Ta
Dissipation Power PD = [W] (Ta=25°C to Ta=150°C)
θja
Where, θja is heat thermal resistance which depends on parameters such as package material, frame material and so on.
Therefore, PD is different in each package.
While, the actual measurement of dissipation power on MUSES01 is obtained using following equation.
(Actual Dissipation Power) = (Supply Voltage VDD) X (Supply Current IDD) – (Output Power Po)
The MUSES01 should be operated in lower than PD of the actual dissipation power.
To sustain the steady state operation, take account of the Dissipation Power and thermal design.
PD [mW]
DIP8
910
Ta [deg]
-40 25 85 150
(Topr max.) (Tstg max.)
Fig.1 Power Dissipations vs. Ambient Temperature on the MUSES01
-4- Ver.2009-12-18

5. MUSES01
TYPICAL CHARACTERISTICS
TO TA L H A R M O N I D I TO R TI N + N O I E
C S O S TO TA L H A R M O N I D I TO R TI N + N O I E
C S O S
vs O U T P U T A M P LI U D E （F R E Q U E N C Y ）
T vs O U T P U T A M P LI U D E （F R E Q U E N C Y ）
T
V + /V -= ± ,A V = + 10, R g= 1kohm ,R f= 9.1kohm , R L = 2kohm ,T a= 25℃
16V
V + /V -= ± ,A V = + 10, R g= 1kohm ,R f= 9.1kohm , R L = 2kohm ,T a= 25℃
15V
10 10
1 1
T H D + N oi [ ]
T H D + N oi [ ]
se %
se %
0.1 0.1
f= 20kH z f= 20kH z
0.01 0.01
1kH z 1kH z
100H z
0.001 100H z 0.001
20H z 20H z
0.0001 0.0001
0.01 0.1 1 10 0.01 0.1 1 10
O utput A m plt
i ude [ rm s]
V O utput A m plt
i ude [ rm s]
V
TO TA L H A R M O N I D I TO R TI N + N O I E
C S O S E Q U I A LE N T I P U T N O I E D E N S I Y vs
V N S T
vs O U T P U T A M P LI U D E （F R E Q U E N C Y ）
T FR E Q U E N C Y
V + /V -= ± ,A V = + 10, R g= 1kohm ,R f= 9.1kohm , R L = 2kohm ,T a= 25℃
9V V + /V -= ± ,A V = + 100,R s= 100ohm ,R L = ∞ a= 25℃
16V ,T
10 80
70
1
60
N oi D ensi y [ / H z]
t nV √
T H D + N oi [ ]
50
se %
0.1
f= 20kH z 40
0.01 30
se
1kH z
100H z 20
0.001
20H z 10
0.0001 0
0.01 0.1 1 10 1 10 100 1,000 10,000
F requency [ z]
H
O utput A m plt
i ude [ rm s]
V
E Q U I A LE N T I P U T N O I E D E N S I Y vs
V N S T E Q U I A LE N T I P U T N O IS E D E N S I Y vs
V N T
FR E Q U E N C Y FR E Q U E N C Y
V + /V -= ± ,A V = + 100,R s= 100ohm ,R L = ∞ a= 25℃
15V ,T V + /V -= ± ,A V = + 100,R s= 100ohm ,R L = ∞ a= 25℃
9V ,T
80 80
70 70
60 60
N oi D ensiy [ / H z]
N oi D ensi y [ / H z]
t nV √
t nV √
50 50
40 40
30 30
se
se
20 20
10 10
0 0
1 10 100 1,000 10,000 1 10 100 1,000 10,000
F requency [ z]
H F requency [H z]
Ver.2009-12-18 -5-

6. MUSES01
C H A N N E L S E P A R A T I N vs F R E Q U E N C Y
O C H A N N E L S E P A R A T I N vs F R E Q U E N C Y
O
V + /V -= ± ,A V =-100, R S =1kohm , R L = 2kohm , V o= 5V rm s, T a= 25℃
16V V + /V -= ± ,A V = -100, R S = 1kohm , R L = 2kohm , V o= 5V rm s, T a= 25℃
15V
-120 -120
-130 -130
C hannel S eparat on [ ]
C hannel S eparat on [ ]
i dB
i dB
-140 -140
-150 -150
-160 -160
-170 -170
-180 -180
10 100 1000 10000 100000 10 100 1000 10000 100000
F requency [ z]
H F requency [ z]
H
C LO S E D -LO O P G A I / H A S E vs
N P
C H A N N E L S E P A R A T I N vs F R E Q U E N C Y
O
F R E Q U E N C Y (T E M P E R A T U R E )
V + /V -= ± , A V = + 100, R S = 100ohm , R T = 50ohm ,R L = 2kohm ,C L = 10pF
16V
V + /V -= ± ,A V = -100, R S = 1kohm , R L = 2kohm , V o= 4V rm s, T a= 25℃
9V V IN = -30dB m ,V i = 0V
cm
-120 60 180
G ai
n
T a＝25℃
-130 40 120
C hannel S eparat on [ ]
-40℃
i dB
-140
V ol age G ai [ ]
f deg]
20 60
n dB
P hase S hi t [
P hase
-150 0 0
85℃
t
-160 -20 -60
-170 -40 -120
-180 -60 -180
10 100 1000 10000 100000 1 10 100 1000 10000 100000
F requency [ z]
H
F requency [ z]
kH
C LO S E D -LO O P G A I / H A S E vs
N P C LO S E D LO O P G A I / H A S E vs
N P
F R E Q U E N C Y (T E M P E R A T U R E ) F R E Q U E N C Y (T E M P E R A T U R E )
V + /V -= ± , A V = + 100, R S = 100ohm , R T = 50ohm ,R L = 2kohm ,C L = 10pF
15V V + /V -= ± , A V = + 100, R S = 100ohm , R T = 50ohm , R L = 2kohm ,C L = 10pF
9V
V IN = -30dB m ,V i = 0V
cm V IN = -30dB m ,V i = 0V
cm
60 180 60 180
G ai
n G ai
n
T a＝25℃ T a＝25℃
40 120 40 120
-40℃ -40℃
V ol age G ai [ ]
V ol age G ai [ ]
f deg]
f deg]
20 60 20 60
n dB
n dB
P hase S hi t [
P hase S hi t [
P hase P hase
0 0 0 0
85℃ 85℃
t
t
-20 -60 -20 -60
-40 -120 -40 -120
-60 -180 -60 -180
1 10 100 1000 10000 100000 1 10 100 1000 10000 100000
F requency [ z]
kH F requency [ z]
kH
-6- Ver.2009-12-18

7. MUSES01
T R A N S I N T R E S P O N S E (T E M P E R A T U R E )
E S LE W R A T E vs T E M P E R A T U R E
V + /V -＝± ,V IN ＝2V P -P ,f= 100kH z
16V V + /V -＝± ,V IN ＝2V P -P ,f=100kH z
16V
P ul
seE dge= 10nsec,G v= 0dB ,C L =10pF , L = 2kohm
R P ul dge=10nsec,G v=0dB ,C L =10pF ,R L =2kohm
seE
6 2 20
Input V ol
tage
5 1
16 F al
l
4 0
S l R at [ / sec]
put V ol age [ ]
nput V ol age [ ]
V
V
3 -1
e V μ
12
t
t
2 T a=25℃ 85℃ -2
-40℃ 8 Ri
se
1 -3
ew
O ut
I
0 -4
4
-1 -5
O utput V ol
tage
-2 -6 0
-2 -1 0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150
T i e [μ
m sec] T em perature [℃]
S LE W R A T E vs T E M P E R A T U R E
T R A N S IE N T R E S P O N S E (T E M P E R A T U R E )
+ - V + /V -＝± ,V IN ＝2V P -P ,f=100kH z
15V
V /V ＝± ,V IN ＝2V P -P ,f= 100kH z
15V
P ul dge= 10nsec,G v= 0dB ,C L = 10pF ,R L = 2kohm
seE P ul dge=10nsec,G v=0dB ,C L =10pF ,R L =2kohm
seE
6 2 20
Input V ol
tage
5 1
16 F al
l
4 0
S l R at [ / sec]
put V ol age [ ]
nput V ol age [ ]
V
V
3 -1
e V μ
12
t
t
2 T a=25℃ 85℃ -2
-40℃ 8 Ri
se
1 -3
ew
O ut
I
0 -4
4
-1 -5
O utput V ol
tage
-2 -6 0
-2 -1 0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150
T i e [ sec]
m μ T em perature [℃]
S LE W R A T E vs T E M P E R A T U R E
T R A N S IE N T R E S P O N S E (T E M P E R A T U R E )
V + /V -＝± ,V IN ＝2V P -P ,f= 100kH z
9V
V + /V -＝± ,V IN ＝2V P -P ,f= 100kH z
9V
P ul dge=10nsec,G v=0dB ,C L =10pF ,R L =2kohm
seE
seE dge= 10nsec,G v= 0dB ,C L = 10pF ,R L = 2kohm
P ul
20
6 2
Input V ol
tage
5 1
16 F al
l
4 0
S l R at [ / sec]
put V ol age [ ]
nput V olage [ ]
V
e V μ
V
3 -1 12
t
t
2 T a=25℃ 85℃ -2
8
1 -40℃ -3
ew
Ri
se
O ut
I
0 -4
4
-1 -5
O utput V ol
tage
-2 -6 0
-2 -1 0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150
T i e [ sec]
m μ T em perature [℃]
Ver.2009-12-18 -7-

8. MUSES01
SUPPLY CURRENT vs TEMPERATURE
SUPPLY CURRENT vs SUPPLY VOLTAGE (SUPPLY VOLTAGE)
(TEMPERATURE) GV=0dB，Vin=0V
GV=0dB，Vin=0V
12 12
Ta=25℃ -40℃ ±16V + -
V /V =±15V
10 10
Supply Current [mA]
8
Supply Current [mA]
8
6 6
85℃ ±9V
4 4
2 2
0 0
0 3 6 9 12 15 18 -50 -25 0 25 50 75 100 125 150
Supply Voltage [V+/V-] Temperature [℃]
INPUT OFFSET VOLTAGE vs SUPPLY VOLTAGE POWER SUPPLY REJECTION RATIO vs
(TEMPERATURE) TEMPERATURE
VICM=0V,Vin=0V V ICM=0V ，V+/V-=±9V to ±16V
5 100
4 90
3 -40℃
Power Supply Rejection Ratio ［dB］
80
Ta＝25℃
Input Offset Voltage ［mV］
2 70
1 60
0 50
-1 40
-2 30
-3 20
85℃
-4 10
-5 0
0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 150
+ -
Supply Voltage ［V /V ］ Temperature ［℃］
INPUT BIAS CURRENT vs TEMPERATURE INPUT BIAS CURRENT vs INPUT COMMON-MODE
(SUPPLY VOLTAGE) VOLTAGE (TEMPERATURE)
V ICM=0V
V+ /V -=±16V
1,000,000 1,000,000
100,000 100,000
Input Bias Current ［pA］
Input Bias Current [pA]
10,000 10,000
85℃
V+/V-=±15V
1,000 1,000
±16V Ta=25℃
100 100
10 10
±9V
-40℃
1 1
-50 -25 0 25 50 75 100 125 150 -16 -12 -8 -4 0 4 8 12 16
Temperature [℃] Common-Mode Votage [V]
-8- Ver.2009-12-18

9. MUSES01
INPUT BIAS CURRENT vs INPUT COMMON-MODE INPUT BIAS CURRENT vs INPUT COMMON-MODE
VOLTAGE (TEMPERATURE) VOLTAGE (TEMPERATURE)
+ - + -
V /V =±15V V /V =±9V
1,000,000 1,000,000
100,000 100,000
Input Bias Current [pA]
Input Bias Current [pA]
10,000 10,000
85℃
85℃
1,000 1,000
Ta=25℃ Ta=25℃
100 100
10 10
-40℃ -40℃
1 1
-15 -12 -9 -6 -3 0 3 6 9 12 15 -9 -6 -3 0 3 6 9
Common-Mode Voltage [V] Cmmon-Mode Voltage [V]
IN P U T O F F S E T V O LT A G E vs O U T P U T V O LT A G E
INPUT OFFSET CURRENT vs TEMPERATURE
(SUPPLY VOLTAGE) (T E M P E R A T U R E )
V ICM=0V V + /V -= ± ，R L = 2kohm to 0V
15V
10,000 5
4
-40℃ T a＝25℃
3
nput O f set V ol age [ V ]
Input Offset Current ［pA］
1,000
2
m
1
at
V+/V-=±15V
100 0
±16V -1
f
85℃
-2
10
I
-3
±9V -4
1 -5
-50 -25 0 25 50 75 100 125 150
Temperature [℃] -16 -12 -8 -4 0 4 8 12 16
O utput V ol
tage [V ]
O P E N -LO O P V O LT A G E G A I vs T E M P E R A T U R E
N
O P E N -LO O P V O LT A G E G A IN vs T E M P E R A T U R E R L = 2kohm to 0V ，V + /V -= ± ，V o= -10V to + 10V
15V
R L = 2kohm to 0V ，V + /V -= ± ，V o= -11V to + 11V
16V
120 120
110 110
100 100
O pen-Loop V ol age G ai [ ]
O pen-Loop V ol age G ai [ ]
n dB
90
n dB
90
80 80
70 70
60
t
60
t
50 50
40 40
30 30
20 20
10 10
0 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T em perature [℃] T em perature [℃]
Ver.2009-12-18 -9-

10. MUSES01
O P E N -LO O P V O LT A G E G A I vs T E M P E R A T U R E
N COMMON-MODE REJECTION RATIO vs TEMPERATUER
R L = 2kohm to 0V ，V + /V -= ± ，V o= -4V t + 4V
9V o （INPUT COMMON-MODE VOLTAGE）
V+ /V- =±16V
120
100
110
100
O pen-Loop V ol age G ai [ ]
Common-Mode Rejection Ratio [dB]
n dB
90 80 0V to +9V
80
70 60
at
60 Vicm=0V to -9V
50
40
40
30
20 20
10
0
0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Temperature [℃]
T em perature [℃]
COMMON-MODE REJECTION RATIO vs TEMPERATURE COMMON-MODE REJECTION RATIO vs TEMPERATURE
(INPUT COMMON-MODE VOLTAGE) （INPUT COMMON-MODE VOLTAGE）
V +/V- =±15V V + /V - =±9V
100 100
0V to +2V
Common-Mode Rejection Ratio [dB]
Common-Mode Rejection Ratio [dB]
80 80
60 60
0V to +8V
Vicm=0V to -8V Vicm=0V to -2V
40 40
20 20
0 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Temperature [℃] Temperature [℃]
M A X I U M O U T P U T V O LT A G E vs
M M A X I U M O U T P U T V O LT A G E vs
M
LO A D R E S I T A N C E (T E M P E R A T U R E )
S LO A D R E S I T A N C E (T E M P E R A T U R E )
S
V + /V -= ± ,G v= open,R L to 0V
16V V + /V -= ± ,G v= open,R L to 0V
15V
18 16
15
12
12
age ［V ］
put V ol age ［V ］
-40℃
9 8 -40℃
6
4
put V ot
t
3
85℃
0 85℃ 0
M axi um O ut
M axi um O ut
-3
-4
-6
m
m
-9 -8
-12
25℃ -12 25℃
-15
-18 -16
10 100 1000 10000 100000 10 100 1000 10000 100000
Load R esi ance ［ohm ］
st Load R esi ance ［ohm ］
st
- 10 - Ver.2009-12-18

11. MUSES01
M A X IM U M O U T P U T V O LT A G E vs M A X I U M O U T P U T V O LT A G E vs
M
LO A D R E S I T A N C E (T E M P E R A T U R E )
S T E M P E R A T U R E (S U P P LY V O LT A G E )
V + /V -= ± ,G v= open,R L to 0V
9V G v= open,R L = 2kohm to 0V
10 18
8 15
12
put V ol age ［V ］
6 -40℃
put V ol age ［V ］
9
4
6
2
t
t
3
±9V
0 85℃
0
V +/ -=±
V 15V ±16V
M axi um O ut
M axi um O ut
-2 -3
-6
-4
m
m
-9
-6
25℃ -12
-8
-15
-10 -18
10 100 1000 10000 100000 -50 -25 0 25 50 75 100 125 150
Load R esi ance ［ohm ］
st T em perature ［℃］
M A X IM U M O U T P U T V O LT A G E vs G A IN B A N D W ID T H P R O D U C T vs T E M P E R A T U R E
T E M P E R A T U R E (S U P P LY V O LT A G E ) (S U P P LY V O LT A G E )
G v= open,R L =10kohm to 0V
f=10kH z,A V =80dB , R S =10ohm , R T =50ohm ,R L =2kohm , C L =10pF ,V IN =-50dB m
18 6
15
12 5 V +/V -=±15V
G ai B andw i h P roduct [ H z]
put V ol age ［V ］
9
±16V
M
6 4
t
3
±9V
0 3
dt
V +/ -=±
V 15V ±16V
M axi um O ut
-3
±9V
-6 2
m
-9
n
-12 1
-15
-18 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T em perature ［℃］ T em perature [℃]
U N IT Y G A IN F R E Q U E N C Y vs T E M P E R A T U R E P H A S E M A R G IN vs T E M P E R A T U R E
(S U P P LY V O LT A G E ) (S U P P LY V O LT A G E )
A V =+100, R S =100ohm , R T =50ohm ,R L =2kohm , C L =56pF ,V IN =-30dB m A V =+100, R S =100ohm , R T =50ohm ,R L =2kohm , C L =10pF ,V IN =-30dB m
6 90
V+ /V-=±15V ±16V
5
U ni y G ai F requency [ H z]
M
V + /V -=±15V
n deg]
4
60
±16V
P hase M argi [
3
±9V
n
2
30
±9V
t
1
0
0
-50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150
T em perature [℃]
T em perature [℃]
Ver.2009-12-18 - 11 -

12. MUSES01
MEMO
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
- 12 - Ver.2009-12-18