This document provides specifications for the TPC8118 P-channel MOSFET transistor from Toshiba. It is intended for use in notebook PC applications due to its small size and low drain-source on-resistance. Key specifications include a maximum drain-source voltage of -30V, threshold voltage between -0.8V to -2.0V, and on-resistance as low as 5.5mOhms. The document provides detailed absolute maximum ratings, electrical characteristics, and switching behavior parameters.

1. TPC8118
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)
TPC8118
Notebook PC Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 36 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS −30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID −13
Drain current A
Pulse (Note 1) IDP −52
Drain power dissipation (t = 10 s)
PD 1.9 W
(Note 2a)
JEDEC ―
Drain power dissipation (t = 10 s)
PD 1.0 W
(Note 2b)
JEITA ―
Single pulse avalanche energy
EAS 110 mJ TOSHIBA 2-6J1B
(Note 3)
Avalanche current IAR −13 A Weight: 0.080 g (typ.)
Repetitive avalanche energy
EAR 0.030 mJ
(Note 2a) (Note 4)
Channel temperature Tch 150 °C
Circuit Configuration
Storage temperature range Tstg −55 to 150 °C
8 7 6 5
Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum 1 2 3 4
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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2. TPC8118
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient
Rth (ch-a) 65.8 °C/W
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
Rth (ch-a) 125 °C/W
(t = 10 s) (Note 2b)
Marking (Note 5)
TPC8118 Part No. (or abbreviation code)
Lot No.
(weekly code)
A line indicates
Lead(Pb)-Free Finish
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
(a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 FR-4
25.4 × 25.4 × 0.8 25.4 × 25.4 × 0.8
(Unit: mm) (Unit: mm)
(a) (b)
Note 3: VDD = −24 V, Tch = 25°C (initial), L = 500 μH, RG = 25 Ω, IAR = −13 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
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3. TPC8118
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA
Drain cut-OFF current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA
V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯
Drain-source breakdown voltage V
V (BR) DSX ID = −10 mA, VGS = 20 V −13 ⎯ ⎯
Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V
VGS = −4 V, ID = −6.5 A ⎯ 10 15
Drain-source ON-resistance RDS (ON) mΩ
VGS = −10 V, ID = −6.5 A ⎯ 5.5 7.0
Forward transfer admittance |Yfs| VDS = −10 V, ID = −6.5 A 18 36 ⎯ S
Input capacitance Ciss ⎯ 2700 ⎯
Reverse transfer capacitance Crss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 600 ⎯ pF
Output capacitance Coss ⎯ 860 ⎯
Rise time tr 0V ⎯ 9 ⎯
ID = −6.5 A
VGS
−10 V VOUT
Turn-on time ton ⎯ 18 ⎯
RL = 2.3 Ω
Switching time 4.7 Ω ns
Fall time tf ⎯ 180 ⎯
VDD ≈ −15 V
Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 460 ⎯
Total gate charge
Qg ⎯ 65 ⎯
(gate-source plus gate-drain)
VDD ≈ −24 V, VGS = −10 V,
nC
Gate-source charge 1 Qgs1 ID = −13 A ⎯ 10 ⎯
Gate-drain (“miller”) charge Qgd ⎯ 20 ⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse
Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −52 A
current
Forward voltage (diode) VDSF IDR = −13 A, VGS = 0 V ⎯ ⎯ 1.2 V
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4. TPC8118
ID – VDS −10 ID – VDS
−20 −50
−10 −3.3 −3 −4 −3.5 −3.3
Common source
−8 −3.5 Ta = 25°C
Common source −6
−16 −4 −40 Pulse test
Ta = 25°C −8
(A)
(A)
−6 Pulse test
−3
ID
−2.8
ID
−12 −30
Drain current
Drain current
−2.8
−8 −20
−2.6
−2.6
−4 −10
VGS = −2.4 V VGS = −2.4 V
−0 0
0 -0.2 -0.4 -0.6 -0.8 -1 0 −1 −2 −3 −4 −5
Drain−source voltage VDS (V) Drain-source voltage VDS (V)
ID – VGS VDS – VGS
−50 −0.5
Common source Common source
VDS = −10 V Ta = 25°C
VDS (V)
Pulse test Pulse test
−40 −0.4
(A)
ID
−30 −0.3
Drain−source voltage
Drain current
−20 −0.2
Ta = 100°C
−3
−10 25°C −0.1 −6.5
−55°C ID = −13 A
0 0
0 −1 −2 −3 −4 −5 0 −4 −8 −12 −16 −20
Gate−source voltage VGS (V) Gate−source voltage VGS (V)
|Yfs| – ID RDS (ON) – ID
1000 1000
Common source
Ta = 25°C
Pulse test
Drain−source ON resistance
Forward transfer admittance
100
25
RDS (ON) (mΩ)
100
Ta = −55°C
|Yfs| (S)
100
10
VGS = −4V
10
1
Common source −10
VDS = −10 V
Pulse test
0.1 1
−0.1 −1 −10 −100 −0.1 −1 −10 −100
Drain current ID (A) Drain current ID (A)
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5. TPC8118
RDS (ON) – Ta IDR – VDS
30 −100
Common source −5
Pulse test
(A)
−10 −3
Drain-source ON-resistance
IDR
−1
RDS (ON) (mΩ)
20 −10
Drain reverse current
ID = −13, −6.5, −3 A VGS = 0 V
10 VGS = −4 V −1
ID = −13, −6.5, −3 A
Common source
VGS = −10 V Ta = 25°C
Pulse test
0 −0.1
−80 −40 0 40 80 120 160 0 0.2 0.4 -0.6 0.8 1.0 1.2
Ambient temperature Ta (°C) Drain−source voltage VDS (V)
Capacitance – VDS Vth – Ta
10000 −2.0
Vth (V)
Ciss
−1.6
(pF)
1000
Coss
Gate threshold voltage
−1.2
C
Capacitance
Crss
−0.8
100
Common source −0.4 Common source
VGS = 0 V VDS = −10 V
f = 1 MHz ID = −1 mA
Ta = 25°C Pulse test
10 0
−0.1 −1 −10 −100 −80 −40 0 40 80 120 160
Drain−source voltage VDS (V) Ambient temperature Ta (°C)
Dynamic input/output
PD – Ta characteristics
2 −30 −30
(1) Device mounted on a glass-epoxy Common source
board(a) (Note 2a) ID = −13 A
(W)
(1)
VDS (V)
(2) Device mounted on a glass-epoxy
(V)
VDD = −24V Ta = 25°C
board (b)(Note 2b)
1.6 t = 10 s Pulse test
PD
VGS
−20 VDS −20
Drain power dissipation
1.2
Drain−source voltage
Gate−source voltage
(2) −12 −6
0.8
−10 VDD = −24V −10
−6 −12
0.4
VGS
0 0 0
0 40 80 120 160 0 20 40 60 80 100
Ambient temperature Ta (°C) Total gate charge Qg (nC)
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6. TPC8118
rth − tw
1000
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b) (2)
Transient thermal impedance
(1)
100
rth (°C/W)
10
1
Single pulse
0.1
0.001 0.01 0.1 1 10 100 1000
Pulse width tw (s)
Safe operating area
-100
ID max (Pulse) *
1 ms *
(A)
-10 t = 10 ms *
ID
Drain current
-1
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature. VDSS max
-0.1
-0.1 -1 -10 -100
Drain−source voltage VDS (V)
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7. TPC8118
RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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