The document summarizes research on GaN-based blue LEDs conducted at the Optoelectronics Laboratory. Key achievements include the growth of low dislocation density GaN, an optically pumped GaN laser, and a high brightness GaN LED. Future work will optimize p-type doping, fabrication of GaN/AlGaN superlattices, and developing electrically pumped laser diodes operating at room temperature. The laboratory uses a MOVPE reactor to grow III-N semiconductor materials and fabricate LEDs on sapphire substrates.