This document contains descriptions of various characteristics measured in bipolar junction transistors (BJTs). It lists reverse early voltage characteristic, reverse DC beta characteristic, forward early voltage characteristic, hFE-Ic characteristic, Vce(sat)-Ic characteristic, Vbe(sat)-Ic characteristic, Vce vs. Cobo characteristic, C-B capacitance characteristic, and E-B capacitance characteristic as key measurements made on BJTs to understand their electrical behavior.

1. Reverse Early Voltage Characteristic
Ie vs. hFE
Reverse DC Beta Characteristic
Forward Early Voltage Characteristic
Ic vs. hFE
IV
hFE-Ic Characteristic
Ic vs.Vce(sat)
BJT Vce(sat) -Ic Characteristic
Ic vs.Vbe(sat)
Vbe(sat) -Ic Characteristic
Vce vs.Cobo
C-B Capacitance Characteristic
CV
Veb vs.Cibo
E-B Capacitance Characteristic
BJT .mmap - 2008/06/11 -