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International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014
DOI : 10.5121/vlsic.2014.5401 1
A 20 Gb/s INJECTION-LOCKED CLOCK AND
DATA RECOVERY CIRCUIT
Sara Jafarbeiki1
, Dr Khosrow Hajsadeghi2
and Naeeme Modir3
1,2
Department of Electrical Engineering, Sharif University of Technology, Tehran, Iran
3
School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran
ABSTRACT
This paper presents a 20 Gb/s injection-locked clock and data recovery (CDR) circuit for burst mode
applications. Utilizing a half rate injection-locked oscillator (ILO) in the proposed CDR circuit leads to
higher speed operation and lower power consumption. In addition, to accommodate process, voltage, and
temperature (PVT) variations and to increase the lock range, a frequency locked loop is proposed to use in
this circuit. The circuit is designed in 0.18 µm CMOS and the simulations for 27
-1 pseudo random bit
sequence (PRBS) show that the circuit consumes 55.3 mW at 20 Gb/s, while the recovered clock rms jitter
is 1.1 ps.
KEYWORDS
Clock and data recovery, eye diagram, injection-locked, lock range, oscillator
1. INTRODUCTION
For the burst-mode applications such as passive optical network (PON) [1, 2], the CDR circuit in
the receiver must lock to each burst data packet very quickly. In a PON system, the optical line
termination (OLT) receives data packets from various optical network units (ONUs) and these
data packets have different phase and amplitude, so immediate clock extraction and data retiming
in the CDR circuit is necessary.
The conventional PLL-based CDR circuit requires a long sequence of bits to settle, hence is not
suitable for burst-mode applications. Fast locking capability of open-loop CDR circuits [3]-[8]
makes them attractive solutions for these applications. However, open loop CDRs suffer from
limited frequency tracking range and high jitter transfer [9]. Jitter transfer is not a serious issue
for applications where no repeater is required [3], hence, open-loop CDRs are appropriate for
such applications.
In open-loop CDR circuits, a gated voltage-controlled oscillator (GVCO) [3]-[5] or an injection-
locked oscillator (ILO) [6]-[8] can usually be used. GVCOs have higher phase noise than LC
VCOs because of their ring structure. So, using GVCO, in general, leads the recovered clock
showing larger jitter than using ILO. Also the operation speed of GVCOs is lower than ILOs [5].
An injection-locked oscillator uses an LC type VCO which has better phase noise and higher
operation speed in comparison with ring oscillator.
A CDR circuit using injection-locking technique is described in [6], in which using two cascaded
voltage-controlled LC oscillators as a full-rate CDR forces the use of an edge detector circuit.
Both VCOs are injection-locked to the input data and the edge detector design needs high speed
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014
2
current mode logic (CML) XOR and delay buffer circuits. Also the reference PLL which is used
to overcome the process, supply voltage, and temperature (PVT) variations consists of a VCO
which must be an exact duplicate of the main VCOs, otherwise the PLL provides an inaccurate
control voltage which is not suitable to use for main VCOs. In this paper, a high speed injection-
locked CDR is proposed which has several advantages over current designs. Utilizing a novel
injection-locked oscillator structure and using an appropriate injection method in the proposed
CDR circuit leads to higher speed operation by eliminating the edge detector circuit and by
sampling the data with a half rate clock. In addition, a new approach instead of a reference PLL is
proposed to accommodate PVT variations which forces the free-running frequency of the ILO to
track the data rate by adding or removing some of the utilized capacitors to the ILO structure. A
20 Gb/s open-loop CDR circuit is designed and simulated in 0.18 µm CMOS technology for
burst-mode applications, which consumes less than 55.3 mW from a 1.8 V supply.
The rest of the paper is organized as follows. Section II describes the CDR topology and
architecture. Section III presents the building blocks utilized in the circuit. Section IV describes
the simulations and summarizes the results, and finally section V concludes the paper.
2. THE PROPOSED CDR
Figure. 1 shows the proposed CDR architecture. The circuit is composed of an injection-locked
LC oscillator, a clock buffer and two retiming flip flops. In addition, to track the frequency of
oscillator a divider chain, a frequency detector (FD), and a counter are used in this structure. Input
data is injected to the ILO to provide an aligned clock. The recovered clock is applied to a clock
buffer which in turn drives two flip flops in the decision circuit to recover the data.
As the injection locking technique has narrow locking range, the ILO may not lock to the
frequency of the incoming data stream if it is not properly controlled. Furthermore, the PVT
variations may also cause ILO to lose lock. In the proposed architecture a frequency locked loop
is used to compensate for these problems. The clock frequency is divided by 40 and then applied
to a frequency detector as shown in Fig. 1. In the frequency detector, this signal is compared to a
reference frequency of 250 MHz. The frequency detector produces an output based on whether
fref > fdivider or not. This signal is then applied to a counter as to determine up or down counting.
The frequency detector circuit also produces another signal whose frequency is dependent on the
difference between fref and fdivider. This signal is applied to the counter as its clock and it
determines the speed of counting. Thus, counter can count up or down depending on the
frequency of ILO in comparison to the reference frequency and then add some capacitors to ILO
or remove them from it. The counter does this through the control of a few switches which are
connected to the capacitors. By using this method the lock range of the circuit is increased
considerably.
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014
3
Figure. 1 The Proposed CDR Architecture
2.1. Frequency tracking
As locking range of the ILO is narrow, a frequency locked loop (FLL) is required to set the
oscillator frequency in the locking range. We propose a method to track the oscillator frequency
and bring it within the appropriate range. The proposed FLL uses a divider chain, a frequency
detector and an up/down counter. The output frequency of the oscillator is divided by 40 and then
is applied to a frequency detector. The frequency detector circuit is shown in Figure. 2 which is a
rotational frequency detector circuit [10]. It compares the divider output frequency with a
reference frequency of 250 MHz and produces an up/down signal and a clock for the counter. In
this circuit the ILO output clock which is composed of CKi and CKq, are sampled by the
reference clock, producing two outputs Q1 and Q2. Leading or lagging of Q1 from Q2 shows the
polarity of the frequency error (fig. 2(b)). The FD’s output, Q3, is applied to the counter and
forces the counter to count up or down depending on the frequency error’s polarity. Fig. 2(c)
shows the states of Q1 and Q2, where the sign of beat frequency is indicated by the rotating
direction.
(a)
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014
4
(b)
(c)
Figure. 2 (a) Frequency detector circuit. (b) FD operation. (c) States of (Q1, Q2) [10]
3. BUILDING BLOCKS
3.1. ILO
Fig. 3 shows the designed super harmonic injection-locked LC oscillator which is used as a half
rate CDR circuit in this paper. In this structure the data is injected into the ILO directly, instead of
applying it to an edge detector. The M1 and M2 create an incident current at the rising and falling
edge of the data, respectively. As a result, at every edge of the data the differential output of the
oscillator will be shorted. The main advantages of this structure are low power consumption and
the reduction of the maximum operational frequency to half of the other state of the art structures
in the literature.
As mentioned before, capacitors with switches are incorporated in the ILO to overcome PVT
variations. By switching these capacitors in or out of the ILO structure, the ILO’s output
frequency is brought to its locking range. So, the ILO can lock to the injected input data.
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014
5
Figure. 3 Injection-locked LC oscillator with utilized capacitors
Since the lock range for this ILO is around 150MHz, the frequency shift in ILO’s output
frequency for each added or removed capacitor is designed to be 100 MHZ. The capacitor values
can be calculated from the following equation.
0
0
0
0 0
1 1 1 1
( )
(1 ) (1 )
out
eq
f f
LC L C C C C
LC
C C
= = = =
+ ∆ ∆ ∆
+ + (1)
Where fout is the ILO output frequency, f0 is the ILO free-running frequency, Ceq is the total
capacitance, C0 is parasitic capacitance of ILO, and C∆ is the capacitance value change for each
step of counting. For example, when the counter has the value of three, the transistors q0, q1 are
on and the capacitors C1, C2 are connected to the ILO. When the counter counts up and changes to
four, the transistors q0, and q1 turn off and q2 turns on hence, the capacitors C3 are connected to
the ILO. So, for this step of counting ∆C=C3-(C1+C2). The values of C1, C2, C3, C4 are chosen
such that the change in the value of capacitors connected to the ILO for each step of counting,
∆C, to be constant.
(2)
0 02
f C
f C
∆ ∆
⇒ = (3)
It is clear that the capacitors values can be calculated easily for a certain frequency shift and a
given free-running frequency of ILO.
3.2. Clock buffer
In order to isolate the capacitive loading of the next stage on the ILO, we use the clock buffer
which is shown in Fig. 4. The bandwidth limitation in conventional CML buffers with resistive
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014
6
loads leads to limited output voltage swings. In order to increase signal swing and to solve the
bandwidth limitation problem, we can use the inductive peaking technique. We choose the
inductor and resistor values to adjust the buffer delay such that the phase difference between the
input data and the clock to be equal to 90 ̊ and, as a result the clock edges align with the center of
the input data eye.
Figure. 4 Clock buffer
3.3. Flipflop
We can classify flipflops into two categories: static and dynamic. Although the static latches can
operate in higher speeds, they consume more power in contrast to their dynamic counterparts. We
use the static flipflops only in situations that we need the fast operation, such as decision circuits
and first stages of divider. The dynamic flipflops are used in all other situations, such as next
stages of the divider and frequency detector circuit, to reduce the power consumption. The details
of these two types of flipflops are described as follows.
3.3.1. Static Flipflop
The CML topology is used in our design because it can speed up the operation to some extent.
The CML circuit operation is fast, because they have lower output voltage swing compared to the
static CMOS circuits. We also use inductive peaking technique similar to [11, 12] which
improves the speed of CML circuits by extending the bandwidth.
Fig.5 shows the designed CML latch circuit.
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014
7
Figure. 5 The designed CML latch circuit
3.3.2. Dynamic Flipflop
As mentioned before, the dynamic flipflop shown in Fig. 6 is used to reduce the power
consumption in situations where we do not need fast operation speed [13].
CLK
CLK
CLK CLK
D
Q Q
Figure. 6 Dynamic latch circuit
We have also depicted a dynamic divider in Fig. 7 which is used in the next stages of the divider
chain. This dynamic divider consumes less power than CML ones. This structure is made of two
consecutive D flipflops which are dynamic latches that sample the data in every rising edge of the
clock.
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014
8
Figure. 7 Dynamic divider
3.4. Counter circuit
For turning the switches, used in the injection locked oscillator, on and off, a 4-bit up/down
counter is utilized which is shown in Fig. 8 [14] This counter receives its clock and control inputs,
which determines the up or down counting state, from the frequency detector circuit.
Figure. 8 Up/Down Counter circuit [14]
4. SIMULATION RESULTS
The proposed circuit has been designed and simulated in a 0.18 µm CMOS technology. This
circuit consumes 55.3mW from a 1.8V supply voltage, where the most of it is consumed in the
CML circuits. The input data is shown in Fig. 9 and the recovered data in response to a 27
-1
continuous mode PRBS is shown in Fig. 10. The simulated jitter values for the recovered data are
6 ps, pp and 1.3 ps, rms. The recovered clock is shown in Fig. 11. The simulated peak-to-peak
and rms jitters for the recovered clock are 4.8 ps and 1.1ps, respectively. The ILO locking range
of 150MHz is achieved. By using the frequency locked loop, the locking range of the CDR circuit
is extended to 1.5 GHz. The CDR circuit recovers the data in less than 50 ps which is equal to 1
bit. Fig. 12 shows this fast locking time.
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014
9
-0 20 40 60 80 100-20 120
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
-0.8
0.8
time, psec
Amplituade,V
Figure. 9 Data eye diagram at the CDR input
0
20
40
60
80
100
120
140
160
180
200
-20
220
-0.5
0.0
0.5
-1.0
1.0
time, psec
RecoveredData,V
Figure. 10 Data eye diagram at the receiver output
Figure. 11 Recovered clock with 27
-1 PRBS input data
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014
10
1.1
0.6
1.6
InputData,V
1.2
0.5
1.9
OutputData1
1.2
0.5
1.9
OutputData2
5 6 74 8
1.0
0.0
1.6
time, nsec
RecoveredClock,V
Figure. 12 Simulated input and output waveforms
Fig.13 depicts the FD outputs, and it shows that when the ILO locks to the input data the FD does
not create any clock pulses for the counter. It means that after lock, the CLK becomes constant,
hence the counter does not count anymore and it shows that the CDR circuit is locked to the input
data.
0
1
-1
2
Up/Down
0.2 0.4 0.6 0.8 1.0 1.2 1.40.0 1.6
0
1
-1
2
time, usec
CLK
Figure. 13 FD output waveforms
The circuit is simulated in different process corners, temperatures and supply voltages. At the
slow/slow process corner, 70◦ C and 1.65V, the rms jitter of the recovered clock is 1.33 ps. The
consumed power in this situation is 47 mW and the circuit locks after 1 bit. At the fast/fast corner,
−20◦ C and 1.95 V, the rms jitter of the recovered clock is 1.12 ps and the consumed power is
70.2mW and the circuit locks after 1 bit.
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014
11
Table 1 summarizes and compares the performance of this work and some other burst mode
CDRs recently published. The operation range and the speed of the proposed circuit, while it uses
a technology of 0.18µm CMOS, have been improved over recently reported structures.
Table 1. The simulation result of the proposed CDR compared with similar work
5. CONCLUSIONS
This work proposes a 20 Gb/s CDR circuit for burst mode applications which is designed and
simulated in a 0.18µm CMOS process. The CDR employs a super harmonic injection-locked
oscillator, hence frequency of the oscillator is reduced to the half of the bit rate and two flip flops
are needed for sampling the data with the half rate clock. With the help of the proposed frequency
tracking technique, the circuit accommodates frequency deviations caused by PVT variations. In
fact, the simulation results demonstrate that the CDR circuit provides a truly wide operation range
(1.5GHz) with reasonably low power consumption.
[6] [15] [16] [17] [18] This
work
Data rate 20 Gb/s 10 Gb/s 71 Gb/s 1.3-5.2
Gb/s
30 Gb/s 20 Gb/s
Recovered
clock jitter
1.2 ps.rms
(with 27
-1
PRBS)
8.5 ps.rms
(with 27
-1
PRBS)
N/A 0.82 ps.rms
(with 27
-1
PRBS)
4 ps.rms 1.1 ps.rms
(with 27
-1
PRBS)
Operation
range
800 MHz 600 MHz N/A N/A N/A 1.5 GHz
Locking time 1 UI < 5 UI N/A < 20 UI N/A 1 UI
Supply
voltage
1.5 1.8 3.3 1.1 N/A 1.8
Power Diss. 175 mW 36 mW 0.5 W 12.4 mW 210 mW 55.3 mW
Technology 90 nm
CMOS
0.18 µm
CMOS
0.18 µm
SiGe
40 nm
CMOS
65 nm
CMOS
0.18 µm
CMOS
Simulation/
Measurement
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014
12
REFERENCES
[1] ‘‘G.984.2 Gigabit-capable passive optical networks (GPON): Physical media dependent (PMD) layer
specification’’, ITU-T, 2003.
[2] C. Liang and S. Liu, “A 20/10/5/2.5Gb/s Power-scaling Burst-Mode CDR Circuit Using
GVCO/Div2/DFF Tri-mode Cells,” ISSCC Dig. Tech. Papers, pp. 224-608, Feb., 2008.
[3] P. Han and W. Y. Choi, “1.25/2.5-Gb/s dual bit-rate burst-mode clock recovery circuits in 0.18-m
CMOS technology,” in IEEE Transactions on Circuits and Systems-II: Express Briefs, vol. 54, pp. 38-
42, Jan. 2007.
[4] M. Nogawa et al., “A 10 Gb/s burst-mode CDR IC in 0.13 µm CMOS,” in IEEE ISSCC Dig. Tech.
Papers, Feb. 2005, pp. 228–229.
[5] Kaeriyama, S. and Mizuno, M., "A 10Gb/s/ch 50mW 120×130µm clock and data recovery circuit", in
Proc. ISSCC, February 2003.
[6] J. Lee, M. Liu, “A 20Gb/s Burst-Mode CDR Circuit Using Injection-Locking Technique”, ISSCC, pp
586, Feb 2007.
[7] M. Tiebout, “A CMOS direct injection-locked oscillator topology as high-frequency low-power
frequency divider,” IEEE J. Solid-State Circuits, vol. 39, no. 7, pp. 1170–1174, Jul. 2004.
[8] B. Razavi, “A study of injection locking and pulling in oscillators,” IEEE J. Solid-State Circuits, vol.
39, no. 9, pp. 1415–1424, Sep. 2004.
[9] M. Hsieh and G. E. Sobelman, “Architectures for Multi-GigabitWire-Linked Clock and Data
Recovery,”IEEE Circuits and Systems Magazine, vol. 8, no. 4, pp. 45-57, Fourth Quarter 2008.
[10] Jri Lee and Ke-Chung Wu " A 20-Gb/s Full-Rate Linear Clock and Data Recovery Circuit With
Automatic Frequency Acquisition," IEEE Journal of Solid-State Circuits (December 2009), 44 (12),
pg. 3590-3602
[11] Terada J, Ohtomo Y, Nishimura K, Katsurai H, Kimura S, Yoshimoto N. Jitter-reduction and pulse-
width-distortion compensation circuits for a 10gb/s burst-mode cdr circuit. In: IEEE ISSCC Dig.
Tech. Papers. San Francisco; 2009, p. 104 –105,105a.
[12] Y. T. Chen, M. W. Li, T. H. Huang, and H. R. Chuang, “A V-band CMOS direct injection-locked
frequency divider using forward body bias technology,” IEEE Microw. Wireless Compon. Lett., vol.
20, no. 7, pp. 396-398, Jul. 2010.
[13] B. Razavi, et al., “Design of high-speed, low-power frequency dividers and phase locked loops in
deep submicron CMOS,” IEEE J. Solid-State Circuits, vol. 30, pp. 101–109, Feb. 1995.
[14] Mircea R. Stan, Alexandre F. Tenca and Milos D. Ercegovac, “Long and Fast Up/Down Counters,”
IEEE Transactions on Computers, vol., 47, no. 7, July, 1998.
[15] Che-Fu Liang, Hong-Lin Chu, and Shen-Iuan Liu, "10Gbps inductorless CDRs with digital frequency
calibration", IEEE Trans. Circuits and Systems-I: Regular Papers, vol. 55, pp. 2514-2524, Oct. 2008.
[16] T. S. Mukherjee, M. Omer, J. Kim, Design and Optimization of a 71 Gb/s Injection-locked CDR.
ISCAS 2009: 177-180
[17] K. Maruko, T. Sugioka, H. Hayashi, Zhiwei Zhou, Y. Tsukuda, Y. Yagishita, H.Konishi, T. Ogata, H.
Owa, T. Niki, K. Konda, M. Sato, H. Shiroshita, T. Ogura, T.Aoki, H. Kihara, and S. Tanaka, “A
1.296-to-5.184Gb/s Transceiver with 2.4mW/(Gb/s)Burst Mode CDR Using Dual-Edge Injection-
Locked Oscillator,” ISSCCDig. Tech. Papers, pp. 364-365, Feb. 2010.
[18] Y. Take, N. Miura, and T. Kuroda, “A 30 Gb/s/link 2.2 Tb/s/mm2 inductively-coupled injection-
locking CDR for High-Speed DRAM Interface,” IEEE Journal of Solid-State Circuits (JSSC), vol. 46,
pp. 2552-2558, NOV. 2011.

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A 20 Gb/s INJECTION-LOCKED CLOCK AND DATA RECOVERY CIRCUIT

  • 1. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014 DOI : 10.5121/vlsic.2014.5401 1 A 20 Gb/s INJECTION-LOCKED CLOCK AND DATA RECOVERY CIRCUIT Sara Jafarbeiki1 , Dr Khosrow Hajsadeghi2 and Naeeme Modir3 1,2 Department of Electrical Engineering, Sharif University of Technology, Tehran, Iran 3 School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran ABSTRACT This paper presents a 20 Gb/s injection-locked clock and data recovery (CDR) circuit for burst mode applications. Utilizing a half rate injection-locked oscillator (ILO) in the proposed CDR circuit leads to higher speed operation and lower power consumption. In addition, to accommodate process, voltage, and temperature (PVT) variations and to increase the lock range, a frequency locked loop is proposed to use in this circuit. The circuit is designed in 0.18 µm CMOS and the simulations for 27 -1 pseudo random bit sequence (PRBS) show that the circuit consumes 55.3 mW at 20 Gb/s, while the recovered clock rms jitter is 1.1 ps. KEYWORDS Clock and data recovery, eye diagram, injection-locked, lock range, oscillator 1. INTRODUCTION For the burst-mode applications such as passive optical network (PON) [1, 2], the CDR circuit in the receiver must lock to each burst data packet very quickly. In a PON system, the optical line termination (OLT) receives data packets from various optical network units (ONUs) and these data packets have different phase and amplitude, so immediate clock extraction and data retiming in the CDR circuit is necessary. The conventional PLL-based CDR circuit requires a long sequence of bits to settle, hence is not suitable for burst-mode applications. Fast locking capability of open-loop CDR circuits [3]-[8] makes them attractive solutions for these applications. However, open loop CDRs suffer from limited frequency tracking range and high jitter transfer [9]. Jitter transfer is not a serious issue for applications where no repeater is required [3], hence, open-loop CDRs are appropriate for such applications. In open-loop CDR circuits, a gated voltage-controlled oscillator (GVCO) [3]-[5] or an injection- locked oscillator (ILO) [6]-[8] can usually be used. GVCOs have higher phase noise than LC VCOs because of their ring structure. So, using GVCO, in general, leads the recovered clock showing larger jitter than using ILO. Also the operation speed of GVCOs is lower than ILOs [5]. An injection-locked oscillator uses an LC type VCO which has better phase noise and higher operation speed in comparison with ring oscillator. A CDR circuit using injection-locking technique is described in [6], in which using two cascaded voltage-controlled LC oscillators as a full-rate CDR forces the use of an edge detector circuit. Both VCOs are injection-locked to the input data and the edge detector design needs high speed
  • 2. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014 2 current mode logic (CML) XOR and delay buffer circuits. Also the reference PLL which is used to overcome the process, supply voltage, and temperature (PVT) variations consists of a VCO which must be an exact duplicate of the main VCOs, otherwise the PLL provides an inaccurate control voltage which is not suitable to use for main VCOs. In this paper, a high speed injection- locked CDR is proposed which has several advantages over current designs. Utilizing a novel injection-locked oscillator structure and using an appropriate injection method in the proposed CDR circuit leads to higher speed operation by eliminating the edge detector circuit and by sampling the data with a half rate clock. In addition, a new approach instead of a reference PLL is proposed to accommodate PVT variations which forces the free-running frequency of the ILO to track the data rate by adding or removing some of the utilized capacitors to the ILO structure. A 20 Gb/s open-loop CDR circuit is designed and simulated in 0.18 µm CMOS technology for burst-mode applications, which consumes less than 55.3 mW from a 1.8 V supply. The rest of the paper is organized as follows. Section II describes the CDR topology and architecture. Section III presents the building blocks utilized in the circuit. Section IV describes the simulations and summarizes the results, and finally section V concludes the paper. 2. THE PROPOSED CDR Figure. 1 shows the proposed CDR architecture. The circuit is composed of an injection-locked LC oscillator, a clock buffer and two retiming flip flops. In addition, to track the frequency of oscillator a divider chain, a frequency detector (FD), and a counter are used in this structure. Input data is injected to the ILO to provide an aligned clock. The recovered clock is applied to a clock buffer which in turn drives two flip flops in the decision circuit to recover the data. As the injection locking technique has narrow locking range, the ILO may not lock to the frequency of the incoming data stream if it is not properly controlled. Furthermore, the PVT variations may also cause ILO to lose lock. In the proposed architecture a frequency locked loop is used to compensate for these problems. The clock frequency is divided by 40 and then applied to a frequency detector as shown in Fig. 1. In the frequency detector, this signal is compared to a reference frequency of 250 MHz. The frequency detector produces an output based on whether fref > fdivider or not. This signal is then applied to a counter as to determine up or down counting. The frequency detector circuit also produces another signal whose frequency is dependent on the difference between fref and fdivider. This signal is applied to the counter as its clock and it determines the speed of counting. Thus, counter can count up or down depending on the frequency of ILO in comparison to the reference frequency and then add some capacitors to ILO or remove them from it. The counter does this through the control of a few switches which are connected to the capacitors. By using this method the lock range of the circuit is increased considerably.
  • 3. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014 3 Figure. 1 The Proposed CDR Architecture 2.1. Frequency tracking As locking range of the ILO is narrow, a frequency locked loop (FLL) is required to set the oscillator frequency in the locking range. We propose a method to track the oscillator frequency and bring it within the appropriate range. The proposed FLL uses a divider chain, a frequency detector and an up/down counter. The output frequency of the oscillator is divided by 40 and then is applied to a frequency detector. The frequency detector circuit is shown in Figure. 2 which is a rotational frequency detector circuit [10]. It compares the divider output frequency with a reference frequency of 250 MHz and produces an up/down signal and a clock for the counter. In this circuit the ILO output clock which is composed of CKi and CKq, are sampled by the reference clock, producing two outputs Q1 and Q2. Leading or lagging of Q1 from Q2 shows the polarity of the frequency error (fig. 2(b)). The FD’s output, Q3, is applied to the counter and forces the counter to count up or down depending on the frequency error’s polarity. Fig. 2(c) shows the states of Q1 and Q2, where the sign of beat frequency is indicated by the rotating direction. (a)
  • 4. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014 4 (b) (c) Figure. 2 (a) Frequency detector circuit. (b) FD operation. (c) States of (Q1, Q2) [10] 3. BUILDING BLOCKS 3.1. ILO Fig. 3 shows the designed super harmonic injection-locked LC oscillator which is used as a half rate CDR circuit in this paper. In this structure the data is injected into the ILO directly, instead of applying it to an edge detector. The M1 and M2 create an incident current at the rising and falling edge of the data, respectively. As a result, at every edge of the data the differential output of the oscillator will be shorted. The main advantages of this structure are low power consumption and the reduction of the maximum operational frequency to half of the other state of the art structures in the literature. As mentioned before, capacitors with switches are incorporated in the ILO to overcome PVT variations. By switching these capacitors in or out of the ILO structure, the ILO’s output frequency is brought to its locking range. So, the ILO can lock to the injected input data.
  • 5. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014 5 Figure. 3 Injection-locked LC oscillator with utilized capacitors Since the lock range for this ILO is around 150MHz, the frequency shift in ILO’s output frequency for each added or removed capacitor is designed to be 100 MHZ. The capacitor values can be calculated from the following equation. 0 0 0 0 0 1 1 1 1 ( ) (1 ) (1 ) out eq f f LC L C C C C LC C C = = = = + ∆ ∆ ∆ + + (1) Where fout is the ILO output frequency, f0 is the ILO free-running frequency, Ceq is the total capacitance, C0 is parasitic capacitance of ILO, and C∆ is the capacitance value change for each step of counting. For example, when the counter has the value of three, the transistors q0, q1 are on and the capacitors C1, C2 are connected to the ILO. When the counter counts up and changes to four, the transistors q0, and q1 turn off and q2 turns on hence, the capacitors C3 are connected to the ILO. So, for this step of counting ∆C=C3-(C1+C2). The values of C1, C2, C3, C4 are chosen such that the change in the value of capacitors connected to the ILO for each step of counting, ∆C, to be constant. (2) 0 02 f C f C ∆ ∆ ⇒ = (3) It is clear that the capacitors values can be calculated easily for a certain frequency shift and a given free-running frequency of ILO. 3.2. Clock buffer In order to isolate the capacitive loading of the next stage on the ILO, we use the clock buffer which is shown in Fig. 4. The bandwidth limitation in conventional CML buffers with resistive
  • 6. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014 6 loads leads to limited output voltage swings. In order to increase signal swing and to solve the bandwidth limitation problem, we can use the inductive peaking technique. We choose the inductor and resistor values to adjust the buffer delay such that the phase difference between the input data and the clock to be equal to 90 ̊ and, as a result the clock edges align with the center of the input data eye. Figure. 4 Clock buffer 3.3. Flipflop We can classify flipflops into two categories: static and dynamic. Although the static latches can operate in higher speeds, they consume more power in contrast to their dynamic counterparts. We use the static flipflops only in situations that we need the fast operation, such as decision circuits and first stages of divider. The dynamic flipflops are used in all other situations, such as next stages of the divider and frequency detector circuit, to reduce the power consumption. The details of these two types of flipflops are described as follows. 3.3.1. Static Flipflop The CML topology is used in our design because it can speed up the operation to some extent. The CML circuit operation is fast, because they have lower output voltage swing compared to the static CMOS circuits. We also use inductive peaking technique similar to [11, 12] which improves the speed of CML circuits by extending the bandwidth. Fig.5 shows the designed CML latch circuit.
  • 7. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014 7 Figure. 5 The designed CML latch circuit 3.3.2. Dynamic Flipflop As mentioned before, the dynamic flipflop shown in Fig. 6 is used to reduce the power consumption in situations where we do not need fast operation speed [13]. CLK CLK CLK CLK D Q Q Figure. 6 Dynamic latch circuit We have also depicted a dynamic divider in Fig. 7 which is used in the next stages of the divider chain. This dynamic divider consumes less power than CML ones. This structure is made of two consecutive D flipflops which are dynamic latches that sample the data in every rising edge of the clock.
  • 8. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014 8 Figure. 7 Dynamic divider 3.4. Counter circuit For turning the switches, used in the injection locked oscillator, on and off, a 4-bit up/down counter is utilized which is shown in Fig. 8 [14] This counter receives its clock and control inputs, which determines the up or down counting state, from the frequency detector circuit. Figure. 8 Up/Down Counter circuit [14] 4. SIMULATION RESULTS The proposed circuit has been designed and simulated in a 0.18 µm CMOS technology. This circuit consumes 55.3mW from a 1.8V supply voltage, where the most of it is consumed in the CML circuits. The input data is shown in Fig. 9 and the recovered data in response to a 27 -1 continuous mode PRBS is shown in Fig. 10. The simulated jitter values for the recovered data are 6 ps, pp and 1.3 ps, rms. The recovered clock is shown in Fig. 11. The simulated peak-to-peak and rms jitters for the recovered clock are 4.8 ps and 1.1ps, respectively. The ILO locking range of 150MHz is achieved. By using the frequency locked loop, the locking range of the CDR circuit is extended to 1.5 GHz. The CDR circuit recovers the data in less than 50 ps which is equal to 1 bit. Fig. 12 shows this fast locking time.
  • 9. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014 9 -0 20 40 60 80 100-20 120 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 -0.8 0.8 time, psec Amplituade,V Figure. 9 Data eye diagram at the CDR input 0 20 40 60 80 100 120 140 160 180 200 -20 220 -0.5 0.0 0.5 -1.0 1.0 time, psec RecoveredData,V Figure. 10 Data eye diagram at the receiver output Figure. 11 Recovered clock with 27 -1 PRBS input data
  • 10. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014 10 1.1 0.6 1.6 InputData,V 1.2 0.5 1.9 OutputData1 1.2 0.5 1.9 OutputData2 5 6 74 8 1.0 0.0 1.6 time, nsec RecoveredClock,V Figure. 12 Simulated input and output waveforms Fig.13 depicts the FD outputs, and it shows that when the ILO locks to the input data the FD does not create any clock pulses for the counter. It means that after lock, the CLK becomes constant, hence the counter does not count anymore and it shows that the CDR circuit is locked to the input data. 0 1 -1 2 Up/Down 0.2 0.4 0.6 0.8 1.0 1.2 1.40.0 1.6 0 1 -1 2 time, usec CLK Figure. 13 FD output waveforms The circuit is simulated in different process corners, temperatures and supply voltages. At the slow/slow process corner, 70◦ C and 1.65V, the rms jitter of the recovered clock is 1.33 ps. The consumed power in this situation is 47 mW and the circuit locks after 1 bit. At the fast/fast corner, −20◦ C and 1.95 V, the rms jitter of the recovered clock is 1.12 ps and the consumed power is 70.2mW and the circuit locks after 1 bit.
  • 11. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014 11 Table 1 summarizes and compares the performance of this work and some other burst mode CDRs recently published. The operation range and the speed of the proposed circuit, while it uses a technology of 0.18µm CMOS, have been improved over recently reported structures. Table 1. The simulation result of the proposed CDR compared with similar work 5. CONCLUSIONS This work proposes a 20 Gb/s CDR circuit for burst mode applications which is designed and simulated in a 0.18µm CMOS process. The CDR employs a super harmonic injection-locked oscillator, hence frequency of the oscillator is reduced to the half of the bit rate and two flip flops are needed for sampling the data with the half rate clock. With the help of the proposed frequency tracking technique, the circuit accommodates frequency deviations caused by PVT variations. In fact, the simulation results demonstrate that the CDR circuit provides a truly wide operation range (1.5GHz) with reasonably low power consumption. [6] [15] [16] [17] [18] This work Data rate 20 Gb/s 10 Gb/s 71 Gb/s 1.3-5.2 Gb/s 30 Gb/s 20 Gb/s Recovered clock jitter 1.2 ps.rms (with 27 -1 PRBS) 8.5 ps.rms (with 27 -1 PRBS) N/A 0.82 ps.rms (with 27 -1 PRBS) 4 ps.rms 1.1 ps.rms (with 27 -1 PRBS) Operation range 800 MHz 600 MHz N/A N/A N/A 1.5 GHz Locking time 1 UI < 5 UI N/A < 20 UI N/A 1 UI Supply voltage 1.5 1.8 3.3 1.1 N/A 1.8 Power Diss. 175 mW 36 mW 0.5 W 12.4 mW 210 mW 55.3 mW Technology 90 nm CMOS 0.18 µm CMOS 0.18 µm SiGe 40 nm CMOS 65 nm CMOS 0.18 µm CMOS Simulation/ Measurement
  • 12. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.4, August 2014 12 REFERENCES [1] ‘‘G.984.2 Gigabit-capable passive optical networks (GPON): Physical media dependent (PMD) layer specification’’, ITU-T, 2003. [2] C. Liang and S. Liu, “A 20/10/5/2.5Gb/s Power-scaling Burst-Mode CDR Circuit Using GVCO/Div2/DFF Tri-mode Cells,” ISSCC Dig. Tech. Papers, pp. 224-608, Feb., 2008. [3] P. Han and W. Y. Choi, “1.25/2.5-Gb/s dual bit-rate burst-mode clock recovery circuits in 0.18-m CMOS technology,” in IEEE Transactions on Circuits and Systems-II: Express Briefs, vol. 54, pp. 38- 42, Jan. 2007. [4] M. Nogawa et al., “A 10 Gb/s burst-mode CDR IC in 0.13 µm CMOS,” in IEEE ISSCC Dig. Tech. Papers, Feb. 2005, pp. 228–229. [5] Kaeriyama, S. and Mizuno, M., "A 10Gb/s/ch 50mW 120×130µm clock and data recovery circuit", in Proc. ISSCC, February 2003. [6] J. Lee, M. Liu, “A 20Gb/s Burst-Mode CDR Circuit Using Injection-Locking Technique”, ISSCC, pp 586, Feb 2007. [7] M. Tiebout, “A CMOS direct injection-locked oscillator topology as high-frequency low-power frequency divider,” IEEE J. Solid-State Circuits, vol. 39, no. 7, pp. 1170–1174, Jul. 2004. [8] B. Razavi, “A study of injection locking and pulling in oscillators,” IEEE J. Solid-State Circuits, vol. 39, no. 9, pp. 1415–1424, Sep. 2004. [9] M. Hsieh and G. E. Sobelman, “Architectures for Multi-GigabitWire-Linked Clock and Data Recovery,”IEEE Circuits and Systems Magazine, vol. 8, no. 4, pp. 45-57, Fourth Quarter 2008. [10] Jri Lee and Ke-Chung Wu " A 20-Gb/s Full-Rate Linear Clock and Data Recovery Circuit With Automatic Frequency Acquisition," IEEE Journal of Solid-State Circuits (December 2009), 44 (12), pg. 3590-3602 [11] Terada J, Ohtomo Y, Nishimura K, Katsurai H, Kimura S, Yoshimoto N. Jitter-reduction and pulse- width-distortion compensation circuits for a 10gb/s burst-mode cdr circuit. In: IEEE ISSCC Dig. Tech. Papers. San Francisco; 2009, p. 104 –105,105a. [12] Y. T. Chen, M. W. Li, T. H. Huang, and H. R. Chuang, “A V-band CMOS direct injection-locked frequency divider using forward body bias technology,” IEEE Microw. Wireless Compon. Lett., vol. 20, no. 7, pp. 396-398, Jul. 2010. [13] B. Razavi, et al., “Design of high-speed, low-power frequency dividers and phase locked loops in deep submicron CMOS,” IEEE J. Solid-State Circuits, vol. 30, pp. 101–109, Feb. 1995. [14] Mircea R. Stan, Alexandre F. Tenca and Milos D. Ercegovac, “Long and Fast Up/Down Counters,” IEEE Transactions on Computers, vol., 47, no. 7, July, 1998. [15] Che-Fu Liang, Hong-Lin Chu, and Shen-Iuan Liu, "10Gbps inductorless CDRs with digital frequency calibration", IEEE Trans. Circuits and Systems-I: Regular Papers, vol. 55, pp. 2514-2524, Oct. 2008. [16] T. S. Mukherjee, M. Omer, J. Kim, Design and Optimization of a 71 Gb/s Injection-locked CDR. ISCAS 2009: 177-180 [17] K. Maruko, T. Sugioka, H. Hayashi, Zhiwei Zhou, Y. Tsukuda, Y. Yagishita, H.Konishi, T. Ogata, H. Owa, T. Niki, K. Konda, M. Sato, H. Shiroshita, T. Ogura, T.Aoki, H. Kihara, and S. Tanaka, “A 1.296-to-5.184Gb/s Transceiver with 2.4mW/(Gb/s)Burst Mode CDR Using Dual-Edge Injection- Locked Oscillator,” ISSCCDig. Tech. Papers, pp. 364-365, Feb. 2010. [18] Y. Take, N. Miura, and T. Kuroda, “A 30 Gb/s/link 2.2 Tb/s/mm2 inductively-coupled injection- locking CDR for High-Speed DRAM Interface,” IEEE Journal of Solid-State Circuits (JSSC), vol. 46, pp. 2552-2558, NOV. 2011.