The document studies the performance of FINFET transistors with respect to width and height. FINFET is a non-planar, double or tri-gate transistor built on a silicon-on-insulator substrate. It has lower leakage currents, reduced short-channel effects, and allows for more transistors per unit area due to its 3D structure. The study found that reducing the width of the FIN can decrease the threshold voltage, while keeping the height similar.

2. Study the performance of FINFET
with respect to the Width and
Height
MD.SHAFIQUL ISLAM
ID:1116047
Department of Electronics and Telecommunication
Engineering. Begum Rokeya University, Rangpur,
Bangladesh.

3. WHAT IS FINFET?
 Non-planar,
 Double/Tri gate transistor
 Built on an SOI substrate
 The important characteristics>>>>>FIN.
 FIN thickness <<<<<<<channel length

4. History of FinFET
 Chenming Hu and his colleagues Originally
 Development purpose
 Double gate
 Tri gate

5. FinFET Structure

6. FEATURES OF FINFET
 Lower leakage currents
 Reduced short-channel effects
 More transistors/unit area due to 3D layout

7. REASON FOR EVOLUTION OF
FINFET
 Reduce Short channel effect
 Reduce leakage current.
 Reduce threshold voltage

8. GENERAL LAYOUT & MODE OF OPERATIONTION
 Same as FET
 One drain , source
 But multiple gate and
 Built on SOI substrate

9. EFFECT ON FIN WIDTH AND HEIGHT
 Width fin<<< Reduce threshold voltage
 Similar height

10. FINFET Simulation

11. Mask Editor

12. Fabrication SOI FinFET by
CSUPREM:

16. ADVANTAGES
 Higher technological maturity than planar DG.
 Suppressed Short Channel Effect(SCE)
 Better in driving current
 More compact
 Low cost

17. DISADVANTAGES
 Reduced mobility for electrons
 Higher source and drain resistances
 Poor reliability

18. APPLICATIONS
1. Low power design in digital circuit, such as RAM, because
of its low off-state current.
2. Power amplifier
3. Modern processor

19. CONCLUSION
 FINFET is one of the promising device to increase the
performance of modern processor