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Datacenter and Server Thermal Trends and Challenges
David Copeland
Thermal Engineering
Packaging Technology
2
2
Outline
● Datacenter
● Ducting
● Power trends
● Environment
● Liquid cooling
● Server
● ITRS projections
● Nonuniformity and leakage
● Thermal packaging
● Liquid cooling
3
3
Datacenter
● Ducting
● Power trends
● Environment
● Liquid cooling
4
4
Hot aisle/cold aisle cooling principle
5
5
Raised-floor implmentation using
CRAC units
6
6
Local cooling units interspersed within
a row of racks
7
7
Hot aisle containment
8
8
1U servers – 2005 and 2012 trends
9
9
2U servers – 2005 and 2012 trends
10
10
4U servers – 2005 and 2012 trends
11
11
Environmental classes for datacenters
12
12
Server flow rate increase for class A2
13
13
Server power increase
14
14
Server power increase
15
15
Internal liquid-cooling loop restricted
within the rack
16
16
Internal liquid-cooling loop and liquid-
cooled external modular cooling unit
17
17
Liquid-cooled rack power trends
18
18
ASHRAE datacom series
19
19
Datacenter summary
● Fully ducted datacenters already here
● Liquid cooling moving to mainstream
– First liquid-to-air
• Rear door heat exchanger
• Pumped system in server
– Next liquid-to-liquid
● Power density increasing by one-half next ten years
20
20
Server
● ITRS projections
● Nonuniformity and leakage
● Thermal packaging
● Liquid cooling
21
21
International Technology Roadmap for
Semiconductors
● Die size
● Power density
– Maximum power
● Junction temperature
– Thermal resistance
22
22
19992000200120022003200420052006200720082009201020112012201320142015201620172018201920202021202220232024
0
50
100
150
200
250
300
350
Cost Performance Die Size
by Roadmap Year
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
Year of Production
Die
Size,
mm2
International Technology Roadmap for
Semiconductors 2010
23
23
19992000200120022003200420052006200720082009201020112012201320142015201620172018201920202021202220232024
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Cost Performance Power Density
by Roadmap Year
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
Year of Production
Power
Density,
W/mm2
International Technology Roadmap for
Semiconductors 2010
24
24
19992000200120022003200420052006200720082009201020112012201320142015201620172018201920202021202220232024
0
50
100
150
200
250
300
Cost Performance Maximum Power
by Roadmap Year
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
Year of Production
Maximum
Power,
W
International Technology Roadmap for
Semiconductors 2010
25
25
19992000200120022003200420052006200720082009201020112012201320142015201620172018201920202021202220232024
0
20
40
60
80
100
120
Cost Performance Junction Temperature
by Roadmap Year
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
Year of Production
Junction
Temperature,
C
International Technology Roadmap for
Semiconductors 2010
26
26
19992000200120022003200420052006200720082009201020112012201320142015201620172018201920202021202220232024
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Cost Performance Thermal Resistnace
by Roadmap Year
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
Year of Production
Thermal
Resistance,
C/W
International Technology Roadmap for
Semiconductors 2010
27
27
ITRS Cost Performance
● Die size remaining constant at 140 mm2
● Power density increasing 0.05 W/mc2
per year
● Maximum power increasing 7 watts per year
● Junction temperature remaining constant at 90 C
● Thermal resistance less than half in 15 years
28
28
19992000200120022003200420052006200720082009201020112012201320142015201620172018201920202021202220232024
0
100
200
300
400
500
600
700
800
900
High Performance Die Size
by Roadmap Year
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
Year of Production
Die
Size,
mm2
International Technology Roadmap for
Semiconductors 2010
29
29
19992000200120022003200420052006200720082009201020112012201320142015201620172018201920202021202220232024
0
0.5
1
1.5
2
2.5
High Performance Power Density
by Roadmap Year
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
Year of Production
Power
Density,
W/mm2
International Technology Roadmap for
Semiconductors 2010
30
30
19992000200120022003200420052006200720082009201020112012201320142015201620172018201920202021202220232024
0
100
200
300
400
500
600
700
800
900
1000
High Performance Maximum Power
by Roadmap Year
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
Year of Production
Maximum
Power,
W
International Technology Roadmap for
Semiconductors 2010
31
31
19992000200120022003200420052006200720082009201020112012201320142015201620172018201920202021202220232024
0
20
40
60
80
100
120
High Performance Junction Temperature
by Roadmap Year
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
Year of Production
Junction
Temperature,
C
International Technology Roadmap for
Semiconductors 2010
32
32
19992000200120022003200420052006200720082009201020112012201320142015201620172018201920202021202220232024
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
High Performance Thermal Resistance
by Roadmap Year
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
Year of Production
Thermal
Resistance.
C/W
International Technology Roadmap for
Semiconductors 2010
33
33
ITRS High Performance
● Maximum size remaining constant at 750 mm2
● Power density increasing .05 W/mm2
per year
● Maximum power increasing 37.5 watts per year
● Junction temperature decreasing ~ 1.5 C per year
● Thermal resistance less than one-fourth in 15 years
34
34
International Technology Roadmap for
Semiconductors
35
35
IBM: Kang 2000
36
36
IBM: Kang 2000
37
37
Fujitsu SPARC64 X Floorplan
38
38
Leakage effects
● Increasing with every technology node
● Temperature dependence becoming stronger
● Can be 50% of processor power in extreme cases
● Relevant metric is % total power change per C
– typical value 0.5 to 2%/C
39
39
Michigan: Kim et al. 2003
Total Chip Dynamic and Static Power
Dissipation Trends Based on the ITRS
40
40
Purdue: Mukhopadhyay et al. 2003
Variation of Leakage Current Components with Temperature
41
41
Thermal Resistance Chain -
Components
Heatsink
Junction Temperature
Air Temperature
Package
}
}
Heatsink
TIM2
Die
Lid
TIM1
Substrate
42
42
Thermal Resistance Chain -
Resistances
Heatsink fin-to-air
Heatsink base
Thermal interface material 2 (TIM2)
Package lid
Thermal interface material 1 (TIM1)
Silicon die
43
43
Thermal Resistance Chain -
Resistances
Silicon die
Thermal interface material 1 (TIM1)
Package lid
Thermal interface material 2 (TIM2)
Heatsink base
Heatsink fin-to-air
44
44
Thermal Resistance Chain - Silicon
Silicon thermal conductivity 100 – 125 W/mK
Non-negligible temperature dependence
Half to two-thirds that of aluminum
One-fourth to one-third that of copper
Resulting value ~ 0.01 C/W
Increases for nonuniform power
45
45
Thermal Resistance Chain - TIM1
Epoxy filled with metal or ceramic particles
Must withstand solder reflow temperature ~ 245 C
Bulk material conductivity 5 W/mK
Non-negligible contact resistance
Fill ratio limited by allowable stiffness
Resulting value 0.03 C/W
Increases for nonuniform power
46
46
Thermal Resistance Chain –
Nonuniform Power
Die power concentrated mostly in cores
Very little power in cache
Resulting resistances up to double uniform
47
47
Cost performance processor
48
48
Thermal Resistance Chain - Lid
Copper thermal conductivity ~ 400 W/mK
Thickness limited by stiffness
Nearly eliminates nonuniformity of heat flux
Resulting value 0.03 C/W
Relatively independent of nonuniform power
49
49
Thermal Resistance Chain - TIM2
Thermal grease conductivity ~ 3 W/mK
Must be removable and cleanable
Mineral or silicone oil with metal or ceramic fillers
Fill ratio limited by flowability
Minimum thickness determined by
• Contact force
• Lid and heatsink flatness
Resulting value ~ 0.03 C/W
50
50
Oracle T4-4 Heatsinks with Embedded
Heatpipes
51
51
Thermal Resistance Chain – Heatsink
Base
Embedded heatpipes or vapor chamber
Copper with subatmospheric water
Water evaporates and condenses
Heatpipe acts as very conductive (125x copper)
52
52
Thermal Resistance Chain – Heatsink
Fin-to-Air
Strongest dependence is on volume airflow rate
Resistance increased by finite fin conductivity (efficiency) η
Resistance increased by finite pressure drop (effectiveness)
Capacity and convective conductances:
Ccap proportional to volume airflow rate
Ccon proportional to pressure drop
Heatsink resistance α 1/η{Ccap[1-e-(Ccon/Ccap)
]}
53
53
Thermal Resistance Chain – Heatsink
Fin-to-Air
Volume airflow rate dictated by system power
Industry average about 120 cfm/kW, now about 80 cfm/kW
Fin efficiency typically about 75 to 90%
Higher for low profile heatsinks
Heatsink effectiveness typically about 75 to 90%
Diminishing return on pressure drop at high levels
54
54
Thermal Resistance Chain – Heatsink-
to-Air
Heatsink-to-air resistance much higher than 1/Ccap:
Resistance of heatsink base
Finite fin efficiency
Finite heatsink effectiveness
Typical values around twice 1/Ccap
Resulting value as low as 0.09 C/W
55
55
Power consumption within a server
56
56
Server memory power trend
57
57
Dual in-line memory module (DIMM)
with and witout heat spreader
58
58
Dual processor blade layout
59
59
Fixed parameters in the thermal
resistance chain
● Data center air temperature (typically 35ºC)
● Electrical interconnect specifications
– Impacts connector & board designs
– Impacts air path possibilities
● Total thermal load
– Defined by system specification
● Processor thermal load
– Defined by chip designs
● Junction temperature (typically 95ºC)
60
60
Ideal versus Real Design Features
CPU upstream of memory
All airflow through CPU
Mostly open midplane
Large diameter fans
Sometimes downstream
Some bypass occurs
Little open area
Only room for small fans
61
61
Alternative technologies
● Solder TIM1
– Used by Intel, AMD, Fujitsu
● Lidless package
– Used in notebooks
● Liquid-to-air cooling
– Used by IBM, Fujtsu
● Liquid-to-liquid cooling
– Used by IBM, Fujitsu
● Coolant on silicon
– Used by Cray
62
62
Organic
Lidded
Air
Metallic
Lidded
Air
Organic
Lidded
Internal
Metallic
Lidded
Internal
Metallic
ColdPlate
Internal
CoolantOnSilicon
Internal
Organic
Lidded
External
Metallic
Lidded
External
Metallic
ColdPlate
External
CoolantOnSilconExternal
0.00
0.05
0.10
0.15
0.20
0.25
0.30
Junction-to-Case
Case-to-Sink
Sink-to-Coolant
Coolant-to-Ambient
Packaging and Cooling Configuration
Thermal
Resistance,
C/W
Thermal Resistance Components
63
63
Component Temperatures at Nominal
Frequency
Organic
Lidded
Air
Metallic
Lidded
Air
Organic
Lidded
Internal
Metallic
Lidded
Internal
Metallic
ColdPlate
Internal
CoolantOnSilicon
Internal
Organic
Lidded
External
Metallic
Lidded
External
Metallic
ColdPlate
External
CoolantOnSilconExternal
0
10
20
30
40
50
60
70
80
90
100
Junction-to-Case
Case-to-Sink
Sink-to-Coolant
Coolant-to-Ambient
Ambient
Packaging / Cooling Configuration
Temperature,
C
64
64
Processor power components
at nominal frequency
Organic
Lidded
Air
Metallic
Lidded
Air
Organic
Lidded
Internal
Metallic
Lidded
Internal
Metallic
ColdPlate
Internal
CoolantOnSilicon
Internal
Organic
Lidded
External
Metallic
Lidded
External
Metallic
ColdPlate
External
CoolantOnSilconExternal
0
50
100
150
200
250
Leakage
Dynamic
Packaging / Cooling Configuration
Component
Power
65
65
Fujitsu M10 Processors and
Coldplates
66
66
Cutaway of Coldplate
67
67
Coldplate and pumps
68
68
Heat Exchangers
69
69
System Interconnect
70
70
Cray: Pautsch 2001
71
71
Server summary
● Processor power thermal resistance decreasing
– Cost performance less than half in 15 years
– High performance less than one-fourth in 15 years
● Memory power doubling in 10 years
● Alternative technologies emerging and returning
– Thermal interface materials
– Liquid cooling
72
72
Future trends
● Datacenter
– Ambient temperatures increasing
• Outside air all the time
– Air-to-liquid first step
● Server
– Power increasing
– Device temperatures decreasing
– Liquid-to-air first step
– Liquid-to-liquid next
73
73

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