This document summarizes the PSpice model for a Fairchild RURD660S general purpose rectifier diode. It includes specifications for the diode components and parameters, and provides simulation results graphs comparing the diode's forward current, capacitance, and reverse recovery characteristics to measurements. Simulation results matched measurements well with less than 5% error.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL
PART NUMBER: RURD660S
MANUFACTURER: FAIRCHILD
REMARK: TC=150 degree
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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3. Forward Current Characteristic Reference
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4. Forward Current Characteristic
Circuit Simulation Result
5.0A
1.0A
100mA
10mA
0V 2.0V
I(X_U1.D_D1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1
0Vdc RURD660S_150p
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) Measurement Simulation %Error
0.01 0.410 0.407 0.732
0.02 0.450 0.454 -0.889
0.05 0.522 0.520 0.383
0.1 0.568 0.569 -0.176
0.2 0.624 0.624 0.000
0.5 0.712 0.708 0.562
1 0.788 0.790 -0.254
2 0.896 0.895 0.112
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Capacitance Characteristic
Circuit Simulation Result
1.0nA
100pA
10pA
1.0pA
10mV 100mV 1.0V 10V 100V
-I(X_U1.D_D1)/(600V/1u)
V(N00016)
Evaluation Circuit
V2
0Vdc
V2 = 600 V1
V1 = 0 U1
TD = 0
TR = 1u
TF = 10ns RURD660S_150p
PW = 5us
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF) Cj(pF)
Vrev(V) %Error
Measurement Simulation
0 175.200 175.200 0.000
1 67.638 67.180 0.677
2 51.100 51.756 -1.284
5 35.580 35.660 -0.225
10 26.900 27.300 -1.487
20 20.600 20.800 -0.971
50 14.900 14.300 4.027
100 11.070 10.750 2.891
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. Reverse Recovery Characteristic
Circuit Simulation Result
200mA
100mA
-0mA
-100mA
-200mA
19.9us 20.0us 20.2us 20.4us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.39V V1
V2 = 10.71V U1
TD = 0
TR = 10ns
TF = 10ns RURD660S_150p
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj 48.00 ns 47.92 ns 0.166
trb 130.00 ns 129.56 ns 0.338
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

9. Reverse Recovery Characteristic Reference
Measurement
Trj = 48.0 (ns)
Trb= 130.0 (ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005