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Device Modeling Report




COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER / STANDARD
PART NUMBER: M1FM3
MANUFACTURER: SHINDENGEN




              Bee Technologies Inc.



 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                   Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




         All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit

                     R1


                     0.001m

          V1
   0Vdc                            D1


                          M1FM3




                     0




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd(V)            Vfwd(V)
           Ifwd(A)                                                    %Error
                            Measurement         Simulation
                     0.1           0.310               0.312                   0.65
                     0.2           0.334               0.333                  -0.30
                     0.5           0.366               0.365                  -0.27
                       1           0.400               0.399                  -0.25
                       2           0.450               0.460                   2.22
                       5           0.561               0.560                  -0.18
                      10           0.730               0.729                  -0.14




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit


                          V2


   V2 = 30                     0Vdc
   V1 = 0
   TD = 0
   TR = 10ns    V1                            D1
   TF = 50ns
   PW = 5us
   PER = 10us
                                      M1FM3




                               0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                               Cj(pF)             Cj(pF)
          Vrev(V)                                                     %Error
                            Measurement         Simulation
                    0.1            289.00             292.00                   1.04
                    0.2            268.00             277.00                   3.36
                    0.5            225.00             230.00                   2.22
                      1            189.00             190.00                   0.53
                      2            150.11             153.00                   1.92
                      5            110.15             110.00                  -0.13
                     10             82.00              84.00                   2.44
                     20             65.00              67.00                   3.08




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

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SPICE MODEL of M1FM3 (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ SCHOOTTKY RECTIFIER / STANDARD PART NUMBER: M1FM3 MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit R1 0.001m V1 0Vdc D1 M1FM3 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.1 0.310 0.312 0.65 0.2 0.334 0.333 -0.30 0.5 0.366 0.365 -0.27 1 0.400 0.399 -0.25 2 0.450 0.460 2.22 5 0.561 0.560 -0.18 10 0.730 0.729 -0.14 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5. Junction Capacitance Characteristic Circuit Simulation Result Evaluation Circuit V2 V2 = 30 0Vdc V1 = 0 TD = 0 TR = 10ns V1 D1 TF = 50ns PW = 5us PER = 10us M1FM3 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0.1 289.00 292.00 1.04 0.2 268.00 277.00 3.36 0.5 225.00 230.00 2.22 1 189.00 190.00 0.53 2 150.11 153.00 1.92 5 110.15 110.00 -0.13 10 82.00 84.00 2.44 20 65.00 67.00 3.08 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004