Device Modeling Report



COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER / STANDARD
PART NUMBER: 1SS367
MANUFACTURER: TOSHIBA




              Bee Technologies Inc.


 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                   Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




          All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit

                      R1


                       0.001m
                                   D1

            V1
    0Vdc


                                1SS367




                           0




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd(V)           Vfwd(V)
            Ifwd(A)                                                 %Error
                            Measurement        Simulation
              1.00E-05             0.052             0.053                     1.54
              3.00E-05             0.078             0.079                     1.15
                0.0001             0.106             0.107                     1.13
                0.0003             0.135             0.138                     2.23
                 0.001             0.174             0.177                     1.67
                 0.003             0.202             0.198                    -1.78
                   0.01            0.232             0.234                     0.69
                   0.03            0.275             0.273                    -0.91
                    0.1            0.326             0.327                     0.43




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit

                          V2


   V2 = 10                     0Vdc
   V1 = 0
   TD = 0
   TR = 10ns    V1                             D1
   TF = 50ns
   PW = 5us
   PER = 10us
                                      1SS367




                               0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                               Cj(pF)            Cj(pF)
            Vrev(V)                                                 %Error
                            Measurement        Simulation
                    0.02          18.400            18.441                 0.22
                    0.03          18.300            18.303                 0.02
                     0.1          17.400            17.372                -0.16
                     0.3          15.300            15.351                 0.33
                       1          11.600            11.517                -0.72
                       3           7.600             7.671                 0.93
                      10           4.500             4.472                -0.62




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

SPICE MODEL of 1SS367 (Standard Model) in SPICE PARK

  • 1.
    Device Modeling Report COMPONENTS: DIODE/SCHOOTTKY RECTIFIER / STANDARD PART NUMBER: 1SS367 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2.
    PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3.
    Forward Current Characteristic CircuitSimulation Result Evaluation Circuit R1 0.001m D1 V1 0Vdc 1SS367 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4.
    Comparison Graph Circuit SimulationResult Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 1.00E-05 0.052 0.053 1.54 3.00E-05 0.078 0.079 1.15 0.0001 0.106 0.107 1.13 0.0003 0.135 0.138 2.23 0.001 0.174 0.177 1.67 0.003 0.202 0.198 -1.78 0.01 0.232 0.234 0.69 0.03 0.275 0.273 -0.91 0.1 0.326 0.327 0.43 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5.
    Junction Capacitance Characteristic CircuitSimulation Result Evaluation Circuit V2 V2 = 10 0Vdc V1 = 0 TD = 0 TR = 10ns V1 D1 TF = 50ns PW = 5us PER = 10us 1SS367 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6.
    Comparison Graph Circuit SimulationResult Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0.02 18.400 18.441 0.22 0.03 18.300 18.303 0.02 0.1 17.400 17.372 -0.16 0.3 15.300 15.351 0.33 1 11.600 11.517 -0.72 3 7.600 7.671 0.93 10 4.500 4.472 -0.62 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004