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Device Modeling Report



COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER / STANDARD
PART NUMBER: 1SS405
MANUFACTURER: TOSHIBA




              Bee Technologies Inc.




 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                    Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




          All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit


                     R1


                      0.001m
                                   D1

            V1
   0Vdc


                              1SS405




                          0




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd(V)           Vfwd(V)
           Ifwd(A)                                                   %Error
                            Measurement        Simulation
             1.00E-06              0.150              0.150                    0.20
             1.00E-05              0.210              0.210                    0.19
             1.00E-04              0.270              0.269                   -0.22
             1.00E-03              0.331              0.330                   -0.30
             1.00E-02              0.401              0.400                   -0.25
             5.00E-02              0.490              0.490                   -0.02




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit

                      V2


   V2 = 20                  0Vdc
   V1 = 0
   TD = 0
   TR = 10ns    V1                       D1
   TF = 50ns
   PW = 5us
   PER = 10us
                               1SS405




                           0




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                               Cj(pF)            Cj(pF)
            Vrev(V)                                                 %Error
                            Measurement        Simulation
                    0.01           3.655              3.650                   -0.14
                    0.03           3.610              3.512                   -2.71
                     0.1           3.500              3.523                    0.66
                     0.3           3.250              3.262                    0.37
                       1           2.780              2.781                    0.04
                       3           2.250              2.268                    0.80
                      10           1.750              1.749                   -0.06
                      20           1.500              1.498                   -0.13




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

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SPICE MODEL of 1SS405 (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ SCHOOTTKY RECTIFIER / STANDARD PART NUMBER: 1SS405 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit R1 0.001m D1 V1 0Vdc 1SS405 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 1.00E-06 0.150 0.150 0.20 1.00E-05 0.210 0.210 0.19 1.00E-04 0.270 0.269 -0.22 1.00E-03 0.331 0.330 -0.30 1.00E-02 0.401 0.400 -0.25 5.00E-02 0.490 0.490 -0.02 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5. Junction Capacitance Characteristic Circuit Simulation Result Evaluation Circuit V2 V2 = 20 0Vdc V1 = 0 TD = 0 TR = 10ns V1 D1 TF = 50ns PW = 5us PER = 10us 1SS405 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0.01 3.655 3.650 -0.14 0.03 3.610 3.512 -2.71 0.1 3.500 3.523 0.66 0.3 3.250 3.262 0.37 1 2.780 2.781 0.04 3 2.250 2.268 0.80 10 1.750 1.749 -0.06 20 1.500 1.498 -0.13 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004