This document summarizes the modeling of a Schottky diode component. It describes the key parameters in the SPICE model, and compares the simulation results to measurement data for forward current, reverse breakdown voltage, and junction capacitance characteristics. The simulation matches the measurement data to within 3% for most test points.
SPICE MODEL of DE5SC4M (Standard Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER / STANDARD
PART NUMBER: DE5SC4M
MANUFACTURER: SHINDENGEN
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
3. Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
U1
0.01m
0Vdc V1
DE5SC4M
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004