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Device Modeling Report




COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER / STANDARD
PART NUMBER: D3FS4A
MANUFACTURER: SHINDENGEN




              Bee Technologies Inc.



 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                  Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




          All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit


                      R1


                       0.001m

           V1
   0Vdc                                 D1



                            D3FS4A




                      0




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd(V)            Vfwd(V)
           Ifwd(A)                                                    %Error
                            Measurement         Simulation
                     0.1            0.27                0.27                  -1.11
                     0.2            0.29                0.29                   1.05
                     0.5            0.32                0.32                   0.32
                       1            0.35                0.35                  -1.15
                       2            0.38                0.38                   0.27
                       5            0.45                0.45                  -0.89
                     10             0.54                0.54                  -0.19




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit

                       V2


   V2 = 40                  0Vdc
   V1 = 0
   TD = 0
   TR = 10ns    V1                          D1
   TF = 50ns
   PW = 5us
   PER = 10us
                                   D3FS4A




                            0




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                               Cj(pF)            Cj(pF)
           Vrev(V)                                                   %Error
                            Measurement        Simulation
                     0.2         1280.00           1321.00                     3.20
                     0.5         1098.00           1123.00                     2.28
                       1           888.00            914.00                    2.93
                       2           699.00            707.00                    1.14
                       5           475.00            479.00                    0.84
                     10            345.00            346.00                    0.29
                     20            260.00            252.60                   -2.85
                     40          175.000           180.000                     2.86




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

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SPICE MODEL of D3FS4A (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ SCHOOTTKY RECTIFIER / STANDARD PART NUMBER: D3FS4A MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit R1 0.001m V1 0Vdc D1 D3FS4A 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.1 0.27 0.27 -1.11 0.2 0.29 0.29 1.05 0.5 0.32 0.32 0.32 1 0.35 0.35 -1.15 2 0.38 0.38 0.27 5 0.45 0.45 -0.89 10 0.54 0.54 -0.19 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5. Junction Capacitance Characteristic Circuit Simulation Result Evaluation Circuit V2 V2 = 40 0Vdc V1 = 0 TD = 0 TR = 10ns V1 D1 TF = 50ns PW = 5us PER = 10us D3FS4A 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0.2 1280.00 1321.00 3.20 0.5 1098.00 1123.00 2.28 1 888.00 914.00 2.93 2 699.00 707.00 1.14 5 475.00 479.00 0.84 10 345.00 346.00 0.29 20 260.00 252.60 -2.85 40 175.000 180.000 2.86 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004