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Device Modeling Report




COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER /STANDARD
PART NUMBER: HN2S02JE
MANUFACTURER: TOSHIBA




               Bee Technologies Inc.


  All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                   Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




          All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit

                R1

                0.001m


           V1                     D1

    0Vdc
                                 HN2S02JE




                     0




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd (V)          Vfwd(V)
            Ifwd(A)                                                 %Error
                            Measurement        Simulation
                     0.1           0.310             0.309                -0.35
                     0.2           0.323             0.323                 0.12
                     0.5           0.340             0.343                 0.82
                       1           0.360             0.358                -0.56
                       2           0.376             0.374                -0.48
                       5           0.399             0.399                -0.05
                     10            0.420             0.422                 0.57
                     20            0.455             0.455                -0.11
                     50            0.520             0.520                -0.06
                    100            0.600             0.600                -0.03




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit

                        V2




   V1 = 0       V1
   V2 = 40              0Vdc
   TD = 0
   TR = 10ns
   TF = 50ns
   PW = 50us
   PER = 10us                D1 HN2S02JE


                                0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                               Cj(pF)            Cj(pF)
            Vrev(V)                                                 %Error
                            Measurement        Simulation
                       1           11.100            10.960                   -1.26
                       2            8.450             8.480                    0.36
                       5            5.750             5.760                    0.17
                      10            4.200             4.220                    0.48
                      20            3.150             3.060                   -2.86
                      30            2.500             2.530                    1.20




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

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SPICE MODEL of HN2S02JE (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ SCHOOTTKY RECTIFIER /STANDARD PART NUMBER: HN2S02JE MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit R1 0.001m V1 D1 0Vdc HN2S02JE 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd (V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.1 0.310 0.309 -0.35 0.2 0.323 0.323 0.12 0.5 0.340 0.343 0.82 1 0.360 0.358 -0.56 2 0.376 0.374 -0.48 5 0.399 0.399 -0.05 10 0.420 0.422 0.57 20 0.455 0.455 -0.11 50 0.520 0.520 -0.06 100 0.600 0.600 -0.03 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5. Junction Capacitance Characteristic Circuit Simulation Result Evaluation Circuit V2 V1 = 0 V1 V2 = 40 0Vdc TD = 0 TR = 10ns TF = 50ns PW = 50us PER = 10us D1 HN2S02JE 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 1 11.100 10.960 -1.26 2 8.450 8.480 0.36 5 5.750 5.760 0.17 10 4.200 4.220 0.48 20 3.150 3.060 -2.86 30 2.500 2.530 1.20 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004