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Device Modeling Report




COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER / STANDARD
PART NUMBER: D5S4M
MANUFACTURER: SHINDENGEN




              Bee Technologies Inc.


 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                  Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




          All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit

                R1

                                     U1
                     0.01m

          V1
   0Vdc



                             D5S4M




                 0




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd(V)           Vfwd(V)
           Ifwd(A)                                                   %Error
                            Measurement        Simulation
                     0.1           0.290             0.290                    -0.07
                     0.2           0.308             0.310                     0.65
                     0.5           0.338             0.340                     0.59
                       1           0.369             0.370                     0.27
                       2           0.410             0.410                     0.10
                       5           0.500             0.499                    -0.22
                      10           0.615             0.618                     0.44
                      20           0.821             0.825                     0.49




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit


                     V2

                                             U1
                          0Vdc

   V2 = 40      V1
   V1 = 0
   TD = 0
   TR = 10ns
   TF = 50ns
   PW = 5us                          D5S4M
   PER = 10us


                                 0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                               Cj(pF)            Cj(pF)
           Vrev(V)                                                   %Error
                            Measurement        Simulation
                     0.1           650.00            620.00                   -4.62
                     0.2           610.00            633.40                    3.84
                     0.5           531.00            548.20                    3.24
                       1           450.00            455.90                    1.31
                       2           360.00            359.60                   -0.11
                       5           250.00            247.70                   -0.92
                      10           182.00            180.90                   -0.60
                      20           132.00            130.50                   -1.14
                      40            89.00             93.00                    4.49




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

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SPICE MODEL of D5S4M (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ SCHOOTTKY RECTIFIER / STANDARD PART NUMBER: D5S4M MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit R1 U1 0.01m V1 0Vdc D5S4M 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.1 0.290 0.290 -0.07 0.2 0.308 0.310 0.65 0.5 0.338 0.340 0.59 1 0.369 0.370 0.27 2 0.410 0.410 0.10 5 0.500 0.499 -0.22 10 0.615 0.618 0.44 20 0.821 0.825 0.49 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5. Junction Capacitance Characteristic Circuit Simulation Result Evaluation Circuit V2 U1 0Vdc V2 = 40 V1 V1 = 0 TD = 0 TR = 10ns TF = 50ns PW = 5us D5S4M PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0.1 650.00 620.00 -4.62 0.2 610.00 633.40 3.84 0.5 531.00 548.20 3.24 1 450.00 455.90 1.31 2 360.00 359.60 -0.11 5 250.00 247.70 -0.92 10 182.00 180.90 -0.60 20 132.00 130.50 -1.14 40 89.00 93.00 4.49 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004