S2L20U PSpice Model (Free SPICE Model)

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: S2L20U
MANUFACTURER: SHINDENGEN
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
*$
* PART NUMBER: S2L20U
* MANUFACTURER: SHINDENGEN
* VRRM=800,Io=25A
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.MODEL S2L20U D
+ IS=583.79E-12
+ N=1.3120
+ RS=40.686E-3
+ IKF=1.3623
+ CJO=243.09E-12
+ M=.43647
+ VJ=.3905
+ BV=200
+ IBV=10.000E-6
+ ISR=0
+ TT=14.510E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V_V1
0V 1.0V 2.0V 2.8V
I(R1)
1.0mA
10mA
100mA
1.0A
10A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
V1
0Vdc
R1
0.01m
0
D1
S2L20U

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.1 0.650 0.648 -0.31
0.2 0.675 0.677 0.30
0.5 0.725 0.724 -0.14
1 0.775 0.774 -0.13
2 0.850 0.849 -0.12
5 1.025 1.026 0.10
10 1.275 1.274 -0.08

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V(N11360)
1.0V 10V 100V
I(V2)/(200V/1u)
10p
100p
200p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
0
V1
TD = 0
TF = 10ns
PW = 20us
PER = 10us
V1 = 0
TR = 1us
V2 = 200
V2
0Vdc
D1
S2L20U

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Cj (pF)
%Error
Measurement Simulation
1 140.000 139.135 -0.62
2 110.000 110.217 0.20
5 77.500 77.258 -0.31
10 57.500 58.066 0.98
20 42.500 43.285 1.85
50 28.500 29.153 2.29
100 22.500 21.559 -4.18

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Time
19.96us 20.00us 20.04us 20.08us 20.12us 20.16us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 12.00 11.84 -1.33
V1
TD = 15ns
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.4V
TR = 5ns
V2 = 10.7V
R1
50
0
D1
S2L20U

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Reverse Recovery Characteristic Reference
Trj =12.00(ns)
Trb= 22.00(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example