SPICE PARK provide FREE SPICE MODEL of 1SS397 (Standard Model).

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1SS397
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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2. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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3. Forward Current Characteristic
Circuit Simulation Result
100mA
10mA
1.0mA
100uA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc D1
1SS397
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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4. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.0001 0.589 0.584 -0.85
0.0002 0.618 0.618 0.00
0.0005 0.659 0.662 0.46
0.001 0.694 0.696 0.29
0.002 0.731 0.730 -0.14
0.005 0.775 0.776 0.13
0.01 0.812 0.811 -0.12
0.02 0.852 0.848 -0.47
0.05 0.903 0.901 -0.22
0.1 0.947 0.948 0.11
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5. Capacitance Characteristic
Circuit Simulation Result
10p
1.0p
100f
10mV 100mV 1.0V 10V 100V
I(V2)/(400V/1u)
V(N11360)
Evaluation Circuit
V2
0Vdc
V2 = 400 V1
V1 = 0 D1
TD = 0 1SS397
TR = 1us
TF = 10ns
PW = 20us
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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6. Comparison Graph
Circuit Simulation Result
Simulation Result
Ct (pF)
Vrev (V) %Error
Measurement Simulation
0.01 2.221 2.215 -0.27
0.02 2.203 2.201 -0.09
0.05 2.151 2.159 0.37
0.1 2.091 2.099 0.38
0.2 1.993 1.999 0.30
0.5 1.78 1.788 0.45
1 1.588 1.577 -0.69
2 1.338 1.347 0.67
5 1.072 1.059 -1.21
10 0.881 0.869 -1.36
20 0.702 0.709 1.00
50 0.532 0.538 1.13
100 0.432 0.437 1.16
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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7. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.2us 20.0us 20.8us 21.6us 22.4us 23.2us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.2V V1
V2 = 11.0V D1
TD = 300ns 1SS397
TR = 5ns
TF = 10ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 320.00 319.69 -0.10
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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8. Reverse Recovery Characteristic Reference
Trj = 320(ns)
Trb= 584(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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