Contents of this presentation: General Introduction to IGBT IGBT Equivalent Circuit IGBT Output Characteristics IGBT usage as a Switch IGBT Datasheet IGBT Applications IGBT Power Losses Some FAQs about IGBTs along with some demonstration videos from different sources

1. Intro to IGBT & its Losses:

2. Presenters:
Zeeshan Akhtar ID # 6118000011
Modern Electric Drive Automatic Control System :
Sir: Chi Yan Bo /车延博
Tianjin University,China

3. Contents:
• General Introduction to IGBT
• IGBT Equivalent Circuit
• IGBT Output Characteristics
• IGBT usage as a Switch
• IGBT Datasheet
• IGBT Applications
• IGBT Power Losses
• Some FAQs about IGBTs
• References
• Q & A Session
Note: Presentation include some videos for demonstration taken from different sources

4. IGBT: Insulated-Gate Bipolar Transistor
• Combination BJT and MOSFET
• High Input Impedance (MOSFET)
• Low On-state Conduction Losses (BJT)
• High Voltage and Current Ratings
• Symbol

5. Cross-Sectional View of an IGBT:

7. IGBT Equivalent Circuit for VGE<VT
+
VCCIEPNP
ICPNP
IBPNP
ICNPN
IENPN
IBNPN
Leakage Current
IRBE
Both transistors are OFF

8. IGBT Equivalent Circuit for VGE>VT :
+
VCC
NPN Transistor
becomes forward
biased at the BE,
drawing current
from the Base of the
PNP transistor.
MOS transistor conducts,
drawing current from the
Base of the PNP transistor.
PNP transistor turns ON,
RMOD decreases due to
carrier injection from the
PNP Emitter.

9. Channel is Induced When VGE>VT :
Induced Channel
electrons
RMOD PNP
RBE
NPN

12. IGBT Output Characteristics
Follows an SCR
characteristic

13. IGBT Transfer Characteristic:

14. IGBT Used as a Switch:

15. Electro mechanical
Relay Operating
from IGBT:

19. Fairchild FGA25N120AND IGBT:

20. Fairchild FGA25N120AND IGBT:

21. Fairchild FGA25N120AND IGBT:

22. Fairchild FGA25N120AND IGBT:

23. Fairchild FGA25N120AND IGBT:

24. Fairchild FGA25N120AND IGBT:

25. Fairchild FGA25N120AND IGBT:

38. Power Losses in an IGBT Module :
Power loss in an IGBT mainly consists of steady –
state conduction loss and switching loss.
The switching loss in the IGBT is given by Esw= Eon + Eoff
whereas, in the Diode it is given by the reverse
recovery loss. All these switching energies can be
added together multiplied by the switching
frequency to give the total module switching
losses.
The conduction losses for the IGBT and free-
wheeling diode are the product of the current
flowing through the collector or anode and
saturation voltage (on state voltage) over the
conducting period. In contrast, the switching losses
happen as a result of energy loss during
the transition and switching frequency.

39. Power Losses in an IGBT Module :
• IGBTs works in two states and produce losses in
those states; conduction losses and switching
losses.
• Conduction losses mainly depend on the duty
cycle, load current and junction temperature,
whereas, switching losses depends on the load
current, dc link voltage, junction temperature
and switching frequency. If the switching
frequency is higher, then the losses will be higher.
Power losses for different stages give significant
amount of power loss in an IGBT module if driven
carefully.
• The total average power of the IGBT is the sum of
the conduction loss, turn on and turn off
losses as shown in Eqn.1
Pavg.IGBT = Pcond + Pon + Poff + Pthermal

40. Power Losses in an IGBT Module :

62. Reverences:
• Google
• Wekipedia
• Slideplayer
• Fujielectric
• Mitsubishi
• Semikron
• www3.ntu.edu.sg
• YouTube