The document summarizes key information about IGBT (Insulated Gate Bipolar Transistor) including: - IGBT combines features of a MOSFET and BJT in a single device. It has high current/voltage switching capabilities. - An IGBT is controlled by a voltage at the gate like a MOSFET but provides high current density and conduction like a BJT. It has applications in power supplies, UPS systems, motor controls, and other circuits requiring high switching. - The group project focuses on understanding the construction, working, advantages, applications, and switching characteristics of IGBTs which are important devices in electrical and electronics systems.

2. IGBT
Group Name: GA-7
Group Leader: Azfar Rasool 12-EL-04
Group Members:
Musa Ali 12-EL-37
M.Imran 12-EL-30
Saba Nazeer 11-12EL-57

3. IGBT
(Insulated Gate Bipolar Transistor)
 What does word stand for…..
 Combination of BJT and MOSFET {[(HOW)}
 Lab Symbol
 Detailed description of symbol

4. Construction and Basic Structure
Revert
the
polarities
and..
Check!

5. Changing to simplified circuit…

6. Working And Operation
 Controlling factor: Gate Voltage
 Called as voltage-controlled BJT
 Input current zero at gate; as
insulated
 Input is MOSFET characteristics
 Output is BJT characteristics
 Threshold Voltage

7. Working And Operation
 npnp structure Thyristor
 Parasitic transistor and resistence
 no effect under normal operation
 Max collector current
 Parasitic transistor activates
 Thus parasitic thyristor activates
 Latch up condition dominates
 i.e. IGBT will remain on
 Cannot controlled by gate
voltage

8. How do IGBT LOOK like….
1RGT10075M12
Made in Italy
5EMK80N
Made in China
Internal Structure
A Dissectional view of
IGBT
• All of the IGBT’s related to any model do have the simplified
circuit drawn on it.

9. Importance & Advantages of IGBT
in Electrical & Electronics world
 Combine features of MOSFET & BJT under single device
 High current & High voltage Switching Applications, provides safe
gateway
 Low on state voltage drop (MOSFET part) & High on state current
density; so smaller chip size & low cost manufacturing & production
 Low voltage drop at input gate; so easily controlled compared to
thyristors & BJT’s.
 High density current conduction provides excellent forward & reverse
blocking capabalites.
 It can be used in every electronic and electrical circuits where high
switch repletion is need.

10. Applications of IGBT’s in Electrical &
Electronics World
Switch Mode
Power Supplies
(SMPS)
 Safe controlling to work with high
voltage or high current.

11. Uninterruptible Power
Supplies (UPS)
 Old UPS gives audible irritating sound
 IGBT use in UPS gives it high dynamic
range and low noise.
 Ex: China company HOMAGE UPS

12. Pulse Width
Modulation (PWM)
 Increase or decrease the
pulse width according to
requirement and desire

13. Three Phase Drivers

14. Switching Characteristics of IGBT’s
 IGBT Switching Test Time Circuit
 Switching Characteristics similar to Power
Mosfet
 Difference is; tailing collector current due to
stored charge in N (negative) Drift region
 Tail current increases turn off loss
 Also increase the dead time between the
two devices in half-bridge circuit
 Operates at -15V at gate to switch off

15.  Turn off speed limited of IGBT (How)
Lifetime stored charge or minority carriers in N(-ve) drift-region
Base is parasitic PNP transistor
No External means to sweep the minority carriers from N(-ve) drift region
To improve Switching time N(+ve) buffer layer helps

16. References:
Powered by google images
Abdus Sattar 1XYS Corporation
Text book: Electronic Device and
Circuits by Floyd

17. Thank You

18. Any Queries