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ILLINOIS INSTITUTE 
OF TECHNOLOGY 
TEM studies of cavity cutouts from EP niobium 
SRF cavities prepared by different treatments. 
Yulia Trenikhina 
SRF Workshop 
10/07/2014
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
Outline 
Cutouts from Nb EP 120°C baked/not baked cavities (HFQS): 
•TEM diffraction: room and cryogenic T 
•Direct observation of Nb nanohydrides for the 1st time 
•High Resolution TEM: no oxidation along grain 
boundaries 
Nitrogen doping for high Q0 (MFQS): 
•Treatment characterization: Nb nitrides on the surface, 
nitrogen doping deeper. 
•TEM diffraction at room and cryogenic T: Nb hydrides 
precipitation is the cause? 
Are Nb nanohydrides responsible for HFQS and MFQS?
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
Effect of 120°C on Q0 
16 
14 
12 
HFQS elimination 10 
in FG EP 
cavities after 120°C bake 
8 
6 
50 100 150 200 250 300 2 
16 
14 
EP + 120C baking, Bpeak = 119 3X0-4 
Electropolished, Bpeak = 119 mT 
Angle (deg) 
Sensor number 
310-1011 
1010 
100 
Nb 310-10 
Nb 3X0-10 
10 FG 
FGB 
50 100 150 9 
Q0 
Bpeak (mT) 
(a) 
(b) 
(c) 
(d)
Origin of Hot and Cold cavity cutout 
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
Hot spot: from EP cavity 
Cold spot: from EP+120°C 
baked cavity 
Cutout (d=11mm, t=3mm) 
“useful near-surface area” 
~10 μm 
~3 μm 
Cu grid 
SEM of FIB sample
Room T Comparison of Hot and Cold spot 
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
[113] [011] 
[-111] 
“useful near-surface area” 
[001] 
NED: Hot (not baked) and Cold 
(baked) spot at room T 
Electron diffraction: only Nb at room T 
H in solid solution (α-phase) 
~10 μm 
~3 μm 
Cu grid 
SEM of FIB sample 
[100]
Cryogenic T investigations of cavity cutouts 
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
Diffraction mapping with low intensity beam 
Hot (not baked) spot at 94K 120°C baked stop at 94K 
ε β 
ε+β 
ε β 
ε β β 
ε ε ε+β ε+β 
ε ε ε 
ε 
ε 
ε 
ε 
ε 
ε ε 
ε 
ε+β 
ε+β 
ε+β β ε 
_ _ _ _ 
Nb +ε,β 
Nb+β(NbH) 
Nb+ε(Nb4H3) 
Nb hydrides precipitation 
Nb 
Nb 
NO Nb hydrides precipitation
Cryogenic T investigations of cavity cutouts 
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
Diffraction with brighter beam, better S/N 
NED: Nb hydrides precipitation in all cutouts, 
amount and/or size of NbHx is different 
44%-68% 
probed 
spots 
26%-29% 
probed 
spots 
Hot (not baked) at 94K 
120°C baked stop at 94K
The 10th Workshop on RF Superconductivity, 2001, Tsukuba, Japan 
MATERIAL SCIENCE OF Nb RF ACCELERATOR CAVITIES: 
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
grain 1 
Grain boundary investigation 
HRTEM 
WHERE DO WE STAND 2001? 
grain 2 
SEM image of GB 
HRTEM: No visible oxide layer along GB 
No evidence! 
NbO (x 1) x % 
C H-OH x y 
H O-OH 2 1nm 
J. Halbritter, SRF 2001 
J. Halbritter 
Forschungszentrum Karlsruhe, Institut für Materialforschung I 
Postfach 3640, 76021 Karlsruhe , Germany 
Abstract 
The rf losses, especially actual level and increase with 
rf fields, limit most stringently the application of 
superconducting rf cavities. This is due to the needed 
cooling power to be supplied locally to the high field re-gion 
causing rf breakdown. The rf losses are due to two 
sources based on different physics: dielectric rf losses 
proportional to REE!2 and shielding current losses pro-portional 
to RHH||2. Material science wise intrinsic losses 
RBCS are separate from extrinsic, rf residual losses Rres. 
The separation of Rres(T,f,H) from the BCS losses 
RBCS(T,f,H) yields the quasi-exponential increases of the 
electric surface resistance with the electric field E! per-pendicular 
to the surface "RE(E!) # exp (-c/E!) and the 
power law increases of the magnetic surface impedances 
with the magnetic field H|| parallel to the surface "RH(H||) 
# (H||)2n (n = 1, 2. .). By Nb/Nb2O5-y interfaces of external 
and internal surfaces RH 
res(T,f) and RE 
res(f,E!) can be 
explained quantitatively by localized states nL of Nb2O5-y 
in close exchange with extended states nm of Nb. Espe-cially, 
the Q-drop # 1/RE(E!) and its reduction by EP-and 
BCP-smoothening and by UHV anneal at T$100°C 
are well accounted for by interface tunnel exchange. The 
UHV anneal not only reduces surface scattering and RE 
but also enforces the RBCS(T, 1.3 GHz, H < 10 mT)-drop 
and reduces RBCS(T, $ GHz, $ 10 mT) by more than a 
Secondly, high pressure (80 bar) water rinsing (HPR) [4] 
is able to reduce the dust on Nb surfaces sufficiently. 
Thirdly, we are left with intrinsic Nb corrosion yielding 
after electropolishing (EP) or buffered chemical polishing 
(BCP), followed in both cases by HPR, some inhomoge-neities, 
as sketched in Fig. 1. 
1nm 
Nb 
NbO (x 0.02) x $ 
Nb O2 5-y 
Fig. 1: Nb surface with crack corrosion by oxidation by Nb2O5 
volume expansion (factor 3). Nb2O5-y-NbOx weak links/segregates 
(y, x < 1) extend up to depths between 0.01 – 1/ 1-10 μm for 
good – bad Nb quality and weak - strong oxidation [8]. 
Embedded in the adsorbate layer of H2O/CxHyOH (& 2 nm) 
being chemisorbed by hydrogen bonds to NbOx(OH)y, 
adsorbate covered dust is found. This dust yields enhanced
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
Possible effect of 120°C bake 
EP cavity EP cavity after 120°C bake 
Nb2O5 
NbOx 
Nb 
H 
Nb2O5 
NbOx 
Nb 
H-vacancy 
complex 
~40 nm 
Mild vacuum 120°C bake 
Introduction of H-Vac complexes 
Less/no NbHx precipitation 
A. Romanenko, C.J. Edwardson, P.G. Coleman, and P.J. Simpson Appl. Phys. Lett. 10, 232601 (2013) 
B. Visentin, M.F. Bathe, V. Moineau, and P. Desgardin, Phys. Rev. ST Accel. Beams 13, 052002 (2010)
Nitrogen doping: a breakthrough in Q0 
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
Nitrogen doping => up to 4 times higher Q! 
Standard state-of-the 
art preparation 
A. Grassellino et al, 2013 Supercond. Sci. 
Technol. 26 102001 (Rapid Communication) 
1.3 GHz 
This was the highest Q 
possible up to last year
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
N-doping-production-ready 
LCLS-II spec 
• Technology 
immediately 
adopted for SLAC 
• 100+ single cell tests 
with high Qs 
• 10s of 9-cell tests 
with the 
“production” 
protocol for LCLS-II 
–We have 8 nine-cell 
cavities lined up for the 
first cryomodule at 
FNAL 
T=2K
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
N-doping treatment 
I. Reacting bulk niobium cavities with N2 gas (N2 p.p ~ 
2x10-2 Torr) at 800°C in UHV furnace for ~20 min 
followed by 30 min with no N; 
II. Material removal via electropolishing (EP) followed by 
high-pressure water rinsing (HPR).
Investigation of N treatment: step I 
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
Nb samples processed parallel with cavities 
XRD: hexagonal 
NbN0.5 
120x103 
115 
95 counts, arb.units 
110 
105 
100 
treatments at 800Cº 
fit 
peak A 
peak B 
peak C 
XPS N2 1s: 
~20 at.% of N 150x103 
406 404 402 400 398 396 394 392 390 
binding energy, eV 
100 
50 
0 
counts, arb.units 
SEM of Nb surface after step I 
treatment at 800Cº 
fit 
doublet A 
doublet B 
doublet C XPS Nb 3d: 
214 212 210 208 206 204 202 200 198 
binding energy, eV 
mixture of 
NbNx, NbNxOy and 
Nb2O5 
XRD, XPS, SEM: we have NbNx (β-NbN) after the 1st step
Investigation of N treatment: step I 
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
~2 μm 
surface after step I TEM sample 
TEM low mag Nb [113] TEM low mag 
NbN0.5 
NbN0.5+ NbNx 
Pt protective layer Pt protective layer 
TEM, NED: NbN0.5+NbNx within at least first 2 μm. 
Poor SRF performance after step I: Q~ 107
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
Investigation of N treatment: step I 
grain 
boundary 
TEM image TEM image 
SEM image 
NbNx extend ~2μm along GB
Investigation of N treatment: step II 
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
TEM image 
Cutout from N treated cavity 
Nb 
TEM image 
Pt protective layer 
Pt protective layer 
XRD, XPS, TEM: NO Nb nitrides after step II
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
N depth profiles by SIMS 
Nitrides Interstitial N in Nb 
Doped 
Non-doped 
Depth (um) 
Set of N-doped 
samples using 
different 
temperatures and 
duration – 
comparison with 
the non-doped
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
SIMS on cutouts 
40 ppm of N
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
Possible effect of N doping 
SEND at 94K: NO Nb hydrides formation in cutouts 
from N-treated cavities, similar to baked cutout. 
N traps H at interstitials close to 
tetrahedral. No/less NbHx precipitation 
• Pfieffer et. al. (J. Phys. F: Metal Phys., V.6(2), 1976); 
• Rush et. al. (Europhys. Lett., 48(2), 187-193, 1999); 
• Magerl (Phys. Rev. B, V.27(2), 1983) 
• Baker et. al. (Acta Metallurgica, V.21, 1973); 
• ...
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
Conclusions 
First direct cryogenic T observation of Nb nanohydrides in cutouts 
from EP baked/not baked cavities 
• Size/distribution of NbHx define Q0 
GB don’t appear to have an oxide layer 
Understanding of N doping of Nb on microscopic material level 
• Possible scenario: Nitrogen traps hydrogen 
Our data are inline with proposed model
ILLINOIS INSTITUTE 
OF TECHNOLOGY 
Acknowledgments 
UIUC MRL: Dr. J.Kwon, Prof. J.-M. Zuo, Dr. J. Mabon 
Fermilab: Dr. Anna Grassellino 
Thank you for your attention!

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Yulia trenikhina tem studies of niobium hydrides participants in superconducting niobium cavitiey cutouts

  • 1. ILLINOIS INSTITUTE OF TECHNOLOGY TEM studies of cavity cutouts from EP niobium SRF cavities prepared by different treatments. Yulia Trenikhina SRF Workshop 10/07/2014
  • 2. ILLINOIS INSTITUTE OF TECHNOLOGY Outline Cutouts from Nb EP 120°C baked/not baked cavities (HFQS): •TEM diffraction: room and cryogenic T •Direct observation of Nb nanohydrides for the 1st time •High Resolution TEM: no oxidation along grain boundaries Nitrogen doping for high Q0 (MFQS): •Treatment characterization: Nb nitrides on the surface, nitrogen doping deeper. •TEM diffraction at room and cryogenic T: Nb hydrides precipitation is the cause? Are Nb nanohydrides responsible for HFQS and MFQS?
  • 3. ILLINOIS INSTITUTE OF TECHNOLOGY Effect of 120°C on Q0 16 14 12 HFQS elimination 10 in FG EP cavities after 120°C bake 8 6 50 100 150 200 250 300 2 16 14 EP + 120C baking, Bpeak = 119 3X0-4 Electropolished, Bpeak = 119 mT Angle (deg) Sensor number 310-1011 1010 100 Nb 310-10 Nb 3X0-10 10 FG FGB 50 100 150 9 Q0 Bpeak (mT) (a) (b) (c) (d)
  • 4. Origin of Hot and Cold cavity cutout ILLINOIS INSTITUTE OF TECHNOLOGY Hot spot: from EP cavity Cold spot: from EP+120°C baked cavity Cutout (d=11mm, t=3mm) “useful near-surface area” ~10 μm ~3 μm Cu grid SEM of FIB sample
  • 5. Room T Comparison of Hot and Cold spot ILLINOIS INSTITUTE OF TECHNOLOGY [113] [011] [-111] “useful near-surface area” [001] NED: Hot (not baked) and Cold (baked) spot at room T Electron diffraction: only Nb at room T H in solid solution (α-phase) ~10 μm ~3 μm Cu grid SEM of FIB sample [100]
  • 6. Cryogenic T investigations of cavity cutouts ILLINOIS INSTITUTE OF TECHNOLOGY Diffraction mapping with low intensity beam Hot (not baked) spot at 94K 120°C baked stop at 94K ε β ε+β ε β ε β β ε ε ε+β ε+β ε ε ε ε ε ε ε ε ε ε ε ε+β ε+β ε+β β ε _ _ _ _ Nb +ε,β Nb+β(NbH) Nb+ε(Nb4H3) Nb hydrides precipitation Nb Nb NO Nb hydrides precipitation
  • 7. Cryogenic T investigations of cavity cutouts ILLINOIS INSTITUTE OF TECHNOLOGY Diffraction with brighter beam, better S/N NED: Nb hydrides precipitation in all cutouts, amount and/or size of NbHx is different 44%-68% probed spots 26%-29% probed spots Hot (not baked) at 94K 120°C baked stop at 94K
  • 8. The 10th Workshop on RF Superconductivity, 2001, Tsukuba, Japan MATERIAL SCIENCE OF Nb RF ACCELERATOR CAVITIES: ILLINOIS INSTITUTE OF TECHNOLOGY grain 1 Grain boundary investigation HRTEM WHERE DO WE STAND 2001? grain 2 SEM image of GB HRTEM: No visible oxide layer along GB No evidence! NbO (x 1) x % C H-OH x y H O-OH 2 1nm J. Halbritter, SRF 2001 J. Halbritter Forschungszentrum Karlsruhe, Institut für Materialforschung I Postfach 3640, 76021 Karlsruhe , Germany Abstract The rf losses, especially actual level and increase with rf fields, limit most stringently the application of superconducting rf cavities. This is due to the needed cooling power to be supplied locally to the high field re-gion causing rf breakdown. The rf losses are due to two sources based on different physics: dielectric rf losses proportional to REE!2 and shielding current losses pro-portional to RHH||2. Material science wise intrinsic losses RBCS are separate from extrinsic, rf residual losses Rres. The separation of Rres(T,f,H) from the BCS losses RBCS(T,f,H) yields the quasi-exponential increases of the electric surface resistance with the electric field E! per-pendicular to the surface "RE(E!) # exp (-c/E!) and the power law increases of the magnetic surface impedances with the magnetic field H|| parallel to the surface "RH(H||) # (H||)2n (n = 1, 2. .). By Nb/Nb2O5-y interfaces of external and internal surfaces RH res(T,f) and RE res(f,E!) can be explained quantitatively by localized states nL of Nb2O5-y in close exchange with extended states nm of Nb. Espe-cially, the Q-drop # 1/RE(E!) and its reduction by EP-and BCP-smoothening and by UHV anneal at T$100°C are well accounted for by interface tunnel exchange. The UHV anneal not only reduces surface scattering and RE but also enforces the RBCS(T, 1.3 GHz, H < 10 mT)-drop and reduces RBCS(T, $ GHz, $ 10 mT) by more than a Secondly, high pressure (80 bar) water rinsing (HPR) [4] is able to reduce the dust on Nb surfaces sufficiently. Thirdly, we are left with intrinsic Nb corrosion yielding after electropolishing (EP) or buffered chemical polishing (BCP), followed in both cases by HPR, some inhomoge-neities, as sketched in Fig. 1. 1nm Nb NbO (x 0.02) x $ Nb O2 5-y Fig. 1: Nb surface with crack corrosion by oxidation by Nb2O5 volume expansion (factor 3). Nb2O5-y-NbOx weak links/segregates (y, x < 1) extend up to depths between 0.01 – 1/ 1-10 μm for good – bad Nb quality and weak - strong oxidation [8]. Embedded in the adsorbate layer of H2O/CxHyOH (& 2 nm) being chemisorbed by hydrogen bonds to NbOx(OH)y, adsorbate covered dust is found. This dust yields enhanced
  • 9. ILLINOIS INSTITUTE OF TECHNOLOGY Possible effect of 120°C bake EP cavity EP cavity after 120°C bake Nb2O5 NbOx Nb H Nb2O5 NbOx Nb H-vacancy complex ~40 nm Mild vacuum 120°C bake Introduction of H-Vac complexes Less/no NbHx precipitation A. Romanenko, C.J. Edwardson, P.G. Coleman, and P.J. Simpson Appl. Phys. Lett. 10, 232601 (2013) B. Visentin, M.F. Bathe, V. Moineau, and P. Desgardin, Phys. Rev. ST Accel. Beams 13, 052002 (2010)
  • 10. Nitrogen doping: a breakthrough in Q0 ILLINOIS INSTITUTE OF TECHNOLOGY Nitrogen doping => up to 4 times higher Q! Standard state-of-the art preparation A. Grassellino et al, 2013 Supercond. Sci. Technol. 26 102001 (Rapid Communication) 1.3 GHz This was the highest Q possible up to last year
  • 11. ILLINOIS INSTITUTE OF TECHNOLOGY N-doping-production-ready LCLS-II spec • Technology immediately adopted for SLAC • 100+ single cell tests with high Qs • 10s of 9-cell tests with the “production” protocol for LCLS-II –We have 8 nine-cell cavities lined up for the first cryomodule at FNAL T=2K
  • 12. ILLINOIS INSTITUTE OF TECHNOLOGY N-doping treatment I. Reacting bulk niobium cavities with N2 gas (N2 p.p ~ 2x10-2 Torr) at 800°C in UHV furnace for ~20 min followed by 30 min with no N; II. Material removal via electropolishing (EP) followed by high-pressure water rinsing (HPR).
  • 13. Investigation of N treatment: step I ILLINOIS INSTITUTE OF TECHNOLOGY Nb samples processed parallel with cavities XRD: hexagonal NbN0.5 120x103 115 95 counts, arb.units 110 105 100 treatments at 800Cº fit peak A peak B peak C XPS N2 1s: ~20 at.% of N 150x103 406 404 402 400 398 396 394 392 390 binding energy, eV 100 50 0 counts, arb.units SEM of Nb surface after step I treatment at 800Cº fit doublet A doublet B doublet C XPS Nb 3d: 214 212 210 208 206 204 202 200 198 binding energy, eV mixture of NbNx, NbNxOy and Nb2O5 XRD, XPS, SEM: we have NbNx (β-NbN) after the 1st step
  • 14. Investigation of N treatment: step I ILLINOIS INSTITUTE OF TECHNOLOGY ~2 μm surface after step I TEM sample TEM low mag Nb [113] TEM low mag NbN0.5 NbN0.5+ NbNx Pt protective layer Pt protective layer TEM, NED: NbN0.5+NbNx within at least first 2 μm. Poor SRF performance after step I: Q~ 107
  • 15. ILLINOIS INSTITUTE OF TECHNOLOGY Investigation of N treatment: step I grain boundary TEM image TEM image SEM image NbNx extend ~2μm along GB
  • 16. Investigation of N treatment: step II ILLINOIS INSTITUTE OF TECHNOLOGY TEM image Cutout from N treated cavity Nb TEM image Pt protective layer Pt protective layer XRD, XPS, TEM: NO Nb nitrides after step II
  • 17. ILLINOIS INSTITUTE OF TECHNOLOGY N depth profiles by SIMS Nitrides Interstitial N in Nb Doped Non-doped Depth (um) Set of N-doped samples using different temperatures and duration – comparison with the non-doped
  • 18. ILLINOIS INSTITUTE OF TECHNOLOGY SIMS on cutouts 40 ppm of N
  • 19. ILLINOIS INSTITUTE OF TECHNOLOGY Possible effect of N doping SEND at 94K: NO Nb hydrides formation in cutouts from N-treated cavities, similar to baked cutout. N traps H at interstitials close to tetrahedral. No/less NbHx precipitation • Pfieffer et. al. (J. Phys. F: Metal Phys., V.6(2), 1976); • Rush et. al. (Europhys. Lett., 48(2), 187-193, 1999); • Magerl (Phys. Rev. B, V.27(2), 1983) • Baker et. al. (Acta Metallurgica, V.21, 1973); • ...
  • 20. ILLINOIS INSTITUTE OF TECHNOLOGY Conclusions First direct cryogenic T observation of Nb nanohydrides in cutouts from EP baked/not baked cavities • Size/distribution of NbHx define Q0 GB don’t appear to have an oxide layer Understanding of N doping of Nb on microscopic material level • Possible scenario: Nitrogen traps hydrogen Our data are inline with proposed model
  • 21. ILLINOIS INSTITUTE OF TECHNOLOGY Acknowledgments UIUC MRL: Dr. J.Kwon, Prof. J.-M. Zuo, Dr. J. Mabon Fermilab: Dr. Anna Grassellino Thank you for your attention!