This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temperatures and channel fin width (W F =5, 10, 20, 40, and 80 nm) are at first simulated in this study. The results show that the increasing of environmental temperature tends to increase threshold voltage, while the subthreshold swing (SS) and drain-induced barrier lowering (DIBL) rise with rising working temperature. Also, the threshold voltage decreases with increasing channel fin width of transistor, while the SS and DIBL increase with increasing channel fin width of transistor, at minimum channel fin width, the SS is very near to the best and ideal then its value grows and going far from the ideal value with increasing channel fin width. So, according to these conditions, the minimum value as possible of fin width is the preferable one for FinFET with better electrical characteristics.
Reconfigurable of current-mode differentiator and integrator based-on current...IJECEIAES
The reconfigurable of the differentiator and integrator based on current conveyor transconductance amplifiers (CCTAs) have been presented in this paper. The proposed configurations are provided with two CCTAs and grounded elements. The configurations can be operated in the differentiator and integrator by selecting external passive elements. The input and output currents have low and high impedances, respectively; therefore, the configurations can be cascaded without additional current buffer. The proposed configurations can be electronically tuned by external direct current (DC) bias currents, and it also has slight fluctuation with temperature. An application of universal filter is demonstrated to confirm the ability of the proposed configurations. The results of simulation with Pspice program are accordance with the theoretical analysis.
Parametric estimation in photovoltaic modules using the crow search algorithmIJECEIAES
The problem of parametric estimation in photovoltaic (PV) modules considering man- ufacturer information is addressed in this research from the perspective of combinatorial optimization. With the data sheet provided by the PV manufacturer, a non-linear non-convex optimization problem is formulated that contains information regarding maximum power, open-circuit, and short-circuit points. To estimate the three parameters of the PV model (i.e., the ideality diode factor (a) and the parallel and series resistances (R p and R )), the crow search algorithm (CSA) is employed, which is a metaheuristic optimization technique inspired by the behavior of the crows searching food deposits. The CSA allows the exploration and exploitation of the solution space through a simple evolution rule derived from the classical PSO method. Numerical simulations reveal the effectiveness and robustness of the CSA to estimate these parameters with objective function values lower than 1 10 s 28 and processing times less than 2 s. All the numerical simulations were developed in MATLAB 2020a and compared with the sine-cosine and vortex search algorithms recently reported in the literature.
An optimum location of on-grid bifacial based photovoltaic system in Iraq IJECEIAES
Bifacial photovoltaic (PV) module can gain 30% more energy compared to monofacial if a suitable location were chosen. Iraq (a Middle East country) has a variable irradiation level according to its geographic coordinates, thus, the performance of PV systems differs. This paper an array (17 series, 13 parallel) was chosen to produce 100 kWp for an on-grid PV system. It investigates the PV system in three cities in Iraq (Mosul, Baghdad, and Basrah). Effect of albedo factor, high and pitch of the bifacial module on energy yield have been studied using PVsyst (software). It has been found that the effect is less for a pitch greater than 6 m. The energy gained from bifacial and monofacial PV system module in these cities shows that Mosul is the most suitable for installing both PV systems followed by Baghdad and lastly Basrah. However, in Basrah, the bifacial gain is 12% higher in the energy than monofacial as irradiation there is higher than the other locations, especially for elevation above 1.5 m. Moreover, the cost of bifacial array is 7.23% higher than monofacial, but this additional cost is acceptable since the bifacial gain is about 11.3% higher energy compared to the monofacial.
A hybrid algorithm for voltage stability enhancement of distribution systems IJECEIAES
This paper presents a hybrid algorithm by applying a hybrid firefly and particle swarm optimization algorithm (HFPSO) to determine the optimal sizing of distributed generation (DG) and distribution static compensator (D-STATCOM) device. A multi-objective function is employed to enhance the voltage stability, voltage profile, and minimize the total power loss of the radial distribution system (RDS). Firstly, the voltage stability index (VSI) is applied to locate the optimal location of DG and D-STATCOM respectively. Secondly, to overcome the sup-optimal operation of existing algorithms, the HFPSO algorithm is utilized to determine the optimal size of both DG and D-STATCOM. Verification of the proposed algorithm has achieved on the standard IEEE 33-bus and Iraqi 65-bus radial distribution systems through simulation using MATLAB. Comprehensive simulation results of four different cases show that the proposed HFPSO demonstrates significant improvements over other existing algorithms in supporting voltage stability and loss reduction in distribution networks. Furthermore, comparisons have achieved to demonstrate the superiority of HFPSO algorithms over other techniques due to its ability to determine the global optimum solution by easy way and speed converge feature.
Benchmarking study between capacitive and electronic load technic to track I-...IJECEIAES
To detect defects of solar panel and understand the effect of external parameters such as fluctuations in illumination, temperature, and the effect of a type of dust on a photovoltaic (PV) panel, it is essential to plot the Ipv=f(Vpv) characteristic of the PV panel, and the simplest way to plot this I-V characteristic is to use a variable resistor. This paper presents a study of comparison and combination between two methods: capacitive and electronic loading to track I-V characteristic. The comparison was performed in terms of accuracy, response time and instrumentation cost used in each circuit, under standard temperature and illumination conditions by using polycrystalline solar panel type SX330J and monocrystalline solar panels type ET-M53630. The whole system is based on simple components, less expensive and especially widely used in laboratories. The results will be between the datasheet of the manufacturer with the experimental data, refinements and improvements concerning the number of points and the trace time have been made by combining these two methods.
Optimizing of the installed capacity of hybrid renewable energy with a modifi...IJECEIAES
The lack of wind speed capacity and the emission of photons from sunlight are the problem in a hybrid system of photovoltaic (PV) panels and wind turbines. To overcome this shortcoming, the incremental conductance (IC) algorithm is applied that could control the converter work cycle and the switching of the buck boost therefore maximum efficiency of maximum power point tracking (MPPT) is reached. The operation of the PV-wind hybrid system, consisting of a 100 W PV array device and a 400 W wind subsystem, 12 V/100 Ah battery energy storage and LED, the PV-wind system requires a hybrid controller for battery charging and usage and load lamp and it’s conducted in experimental setup. The experimental has shown that an average increase in power generated was 38.8% compared to a single system of PV panels or a single wind turbine sub-system. Therefore, the potential opportunities for increasing power production in the tropics wheather could be carried out and applied with this model.
Modified T-type topology of three-phase multi-level inverter for photovoltaic...IJECEIAES
In this article, a three-phase multilevel neutral-point-clamped inverter with a modified t-type structure of switches is proposed. A pulse width modulation (PWM) scheme of the proposed inverter is also developed. The proposed topology of the multilevel inverter has the advantage of being simple, on the one hand since it does contain only semiconductors in reduced number (corresponding to the number of required voltage levels), and no other components such as switching or flying capacitors, and on the other hand, the control scheme is much simpler and more suitable for variable frequency and voltage control. The performances of this inverter are analyzed through simulations carried out in the MATLAB/Simulink environment on a threephase inverter with 9 levels. In all simulations, the proposed topology is connected with R-load or RL-load without any output filter.
Hybrid bypass technique to mitigate leakage current in the grid-tied inverterIJECEIAES
The extensive use of fossil fuel is destroying the balance of nature that could lead to many problems in the forthcoming era. Renewable energy resources are a ray of hope to avoid possible destruction. Smart grid and distributed power generation systems are now mainly built with the help of renewable energy resources. The integration of renewable energy production system with the smart grid and distributed power generation is facing many challenges that include addressing the issue of isolation and power quality. This paper presents a new approach to address the aforementioned issues by proposing a hybrid bypass technique concept to improve the overall performance of the grid-tied inverter in solar power generation. The topology with the proposed technique is presented using traditional H5, oH5 and H6 inverter. Comparison of topologies with literature is carried out to check the feasibility of the method proposed. It is found that the leakage current of all the proposed inverters is 9 mA and total harmonic distortion is almost about 2%. The proposed topology has good efficiency, common mode and differential mode characteristics.
Reconfigurable of current-mode differentiator and integrator based-on current...IJECEIAES
The reconfigurable of the differentiator and integrator based on current conveyor transconductance amplifiers (CCTAs) have been presented in this paper. The proposed configurations are provided with two CCTAs and grounded elements. The configurations can be operated in the differentiator and integrator by selecting external passive elements. The input and output currents have low and high impedances, respectively; therefore, the configurations can be cascaded without additional current buffer. The proposed configurations can be electronically tuned by external direct current (DC) bias currents, and it also has slight fluctuation with temperature. An application of universal filter is demonstrated to confirm the ability of the proposed configurations. The results of simulation with Pspice program are accordance with the theoretical analysis.
Parametric estimation in photovoltaic modules using the crow search algorithmIJECEIAES
The problem of parametric estimation in photovoltaic (PV) modules considering man- ufacturer information is addressed in this research from the perspective of combinatorial optimization. With the data sheet provided by the PV manufacturer, a non-linear non-convex optimization problem is formulated that contains information regarding maximum power, open-circuit, and short-circuit points. To estimate the three parameters of the PV model (i.e., the ideality diode factor (a) and the parallel and series resistances (R p and R )), the crow search algorithm (CSA) is employed, which is a metaheuristic optimization technique inspired by the behavior of the crows searching food deposits. The CSA allows the exploration and exploitation of the solution space through a simple evolution rule derived from the classical PSO method. Numerical simulations reveal the effectiveness and robustness of the CSA to estimate these parameters with objective function values lower than 1 10 s 28 and processing times less than 2 s. All the numerical simulations were developed in MATLAB 2020a and compared with the sine-cosine and vortex search algorithms recently reported in the literature.
An optimum location of on-grid bifacial based photovoltaic system in Iraq IJECEIAES
Bifacial photovoltaic (PV) module can gain 30% more energy compared to monofacial if a suitable location were chosen. Iraq (a Middle East country) has a variable irradiation level according to its geographic coordinates, thus, the performance of PV systems differs. This paper an array (17 series, 13 parallel) was chosen to produce 100 kWp for an on-grid PV system. It investigates the PV system in three cities in Iraq (Mosul, Baghdad, and Basrah). Effect of albedo factor, high and pitch of the bifacial module on energy yield have been studied using PVsyst (software). It has been found that the effect is less for a pitch greater than 6 m. The energy gained from bifacial and monofacial PV system module in these cities shows that Mosul is the most suitable for installing both PV systems followed by Baghdad and lastly Basrah. However, in Basrah, the bifacial gain is 12% higher in the energy than monofacial as irradiation there is higher than the other locations, especially for elevation above 1.5 m. Moreover, the cost of bifacial array is 7.23% higher than monofacial, but this additional cost is acceptable since the bifacial gain is about 11.3% higher energy compared to the monofacial.
A hybrid algorithm for voltage stability enhancement of distribution systems IJECEIAES
This paper presents a hybrid algorithm by applying a hybrid firefly and particle swarm optimization algorithm (HFPSO) to determine the optimal sizing of distributed generation (DG) and distribution static compensator (D-STATCOM) device. A multi-objective function is employed to enhance the voltage stability, voltage profile, and minimize the total power loss of the radial distribution system (RDS). Firstly, the voltage stability index (VSI) is applied to locate the optimal location of DG and D-STATCOM respectively. Secondly, to overcome the sup-optimal operation of existing algorithms, the HFPSO algorithm is utilized to determine the optimal size of both DG and D-STATCOM. Verification of the proposed algorithm has achieved on the standard IEEE 33-bus and Iraqi 65-bus radial distribution systems through simulation using MATLAB. Comprehensive simulation results of four different cases show that the proposed HFPSO demonstrates significant improvements over other existing algorithms in supporting voltage stability and loss reduction in distribution networks. Furthermore, comparisons have achieved to demonstrate the superiority of HFPSO algorithms over other techniques due to its ability to determine the global optimum solution by easy way and speed converge feature.
Benchmarking study between capacitive and electronic load technic to track I-...IJECEIAES
To detect defects of solar panel and understand the effect of external parameters such as fluctuations in illumination, temperature, and the effect of a type of dust on a photovoltaic (PV) panel, it is essential to plot the Ipv=f(Vpv) characteristic of the PV panel, and the simplest way to plot this I-V characteristic is to use a variable resistor. This paper presents a study of comparison and combination between two methods: capacitive and electronic loading to track I-V characteristic. The comparison was performed in terms of accuracy, response time and instrumentation cost used in each circuit, under standard temperature and illumination conditions by using polycrystalline solar panel type SX330J and monocrystalline solar panels type ET-M53630. The whole system is based on simple components, less expensive and especially widely used in laboratories. The results will be between the datasheet of the manufacturer with the experimental data, refinements and improvements concerning the number of points and the trace time have been made by combining these two methods.
Optimizing of the installed capacity of hybrid renewable energy with a modifi...IJECEIAES
The lack of wind speed capacity and the emission of photons from sunlight are the problem in a hybrid system of photovoltaic (PV) panels and wind turbines. To overcome this shortcoming, the incremental conductance (IC) algorithm is applied that could control the converter work cycle and the switching of the buck boost therefore maximum efficiency of maximum power point tracking (MPPT) is reached. The operation of the PV-wind hybrid system, consisting of a 100 W PV array device and a 400 W wind subsystem, 12 V/100 Ah battery energy storage and LED, the PV-wind system requires a hybrid controller for battery charging and usage and load lamp and it’s conducted in experimental setup. The experimental has shown that an average increase in power generated was 38.8% compared to a single system of PV panels or a single wind turbine sub-system. Therefore, the potential opportunities for increasing power production in the tropics wheather could be carried out and applied with this model.
Modified T-type topology of three-phase multi-level inverter for photovoltaic...IJECEIAES
In this article, a three-phase multilevel neutral-point-clamped inverter with a modified t-type structure of switches is proposed. A pulse width modulation (PWM) scheme of the proposed inverter is also developed. The proposed topology of the multilevel inverter has the advantage of being simple, on the one hand since it does contain only semiconductors in reduced number (corresponding to the number of required voltage levels), and no other components such as switching or flying capacitors, and on the other hand, the control scheme is much simpler and more suitable for variable frequency and voltage control. The performances of this inverter are analyzed through simulations carried out in the MATLAB/Simulink environment on a threephase inverter with 9 levels. In all simulations, the proposed topology is connected with R-load or RL-load without any output filter.
Hybrid bypass technique to mitigate leakage current in the grid-tied inverterIJECEIAES
The extensive use of fossil fuel is destroying the balance of nature that could lead to many problems in the forthcoming era. Renewable energy resources are a ray of hope to avoid possible destruction. Smart grid and distributed power generation systems are now mainly built with the help of renewable energy resources. The integration of renewable energy production system with the smart grid and distributed power generation is facing many challenges that include addressing the issue of isolation and power quality. This paper presents a new approach to address the aforementioned issues by proposing a hybrid bypass technique concept to improve the overall performance of the grid-tied inverter in solar power generation. The topology with the proposed technique is presented using traditional H5, oH5 and H6 inverter. Comparison of topologies with literature is carried out to check the feasibility of the method proposed. It is found that the leakage current of all the proposed inverters is 9 mA and total harmonic distortion is almost about 2%. The proposed topology has good efficiency, common mode and differential mode characteristics.
Convergence analysis of the triangular-based power flow method for AC distribu...IJECEIAES
This paper addresses the convergence analysis of the triangular-based power flow (PF) method in alternating current radial distribution networks. The PF formulation is made via upper-triangular matrices, which enables finding a general iterative PF formula that does not require admittance matrix calculations. The convergence analysis of this iterative formula is carried out by applying the Banach fixed-point theorem (BFPT), which allows demonstrating that under an adequate voltage profile the triangular-based PF always converges. Numerical validations are made, on the well-known 33 and 69 distribution networks test systems. Gauss-seidel, newton-raphson, and backward/forward PF methods are considered for the sake of comparison. All the simulations are carried out in MATLAB software.
Intelligent control of battery energy storage for microgrid energy management...IJECEIAES
In this paper, an intelligent control strategy for a microgrid system consisting of Photovoltaic panels, grid-connected, and li-ion battery energy storage systems proposed. The energy management based on the managing of battery charging and discharging by integration of a smart controller for DC/DC bidirectional converter. The main novelty of this solution are the integration of artificial neural network (ANN) for the estimation of the battery state of charge (SOC) and for the control of bidirectional converter. The simulation results obtained in the MATLAB/Simulink environment explain the performance and the robust of the proposed control technique.
A new bidirectional multilevel inverter topology with a high number of voltage levels with a very reduced number of power components is proposed in this paper. Only TEN power switches and four asymmetric DC voltage sources are used to generate 25 voltage levels in this new topology. The proposed multilevel converter is more suitable for e-mobility and photovoltaic applications where the overall energy source can be composed of a few units/associations of several basic source modules. Several benefits are provided by this new topology: Highly sinusoidal current and voltage waveforms, low Total Harmonic Distortion, very low switching losses, and minimum cost and size of the device. For optimum control of this 25-level voltage inverter, a special Modified Hybrid Modulation technique is performed. The proposed 25-level inverter is compared to various topologies published recently in terms of cost, the number of active power switches, clamped diodes, flying capacitors, DC floating capacitors, and the number of DC voltage sources. This comparison clearly shows that the proposed topology is cost-effective, compact, and very efficient. The effectiveness and the good performance of the proposed multilevel power converter (with and without PWM control) are verified and checked by computational simulations.
Various demand side management techniques and its role in smart grid–the stat...IJECEIAES
The current lifestyle of humanity relies heavily on energy consumption, thusrendering it an inevitable need. An ever-increasing demand for energy hasresulted from the increasing population. Most of this demand is met by thetraditional sources that continuously deplete and raise significantenvironmental issues. The existing power structure of developing nations isaging, unstable, and unfeasible, further prolonging the problem. The existingelectricity grid is unstable, vulnerable to blackouts and disruption, has hightransmission losses, low quality of power, insufficient electricity supply, anddiscourages distributed energy sources from being incorporated. Mitigatingthese problems requires a complete redesign of the system of powerdistribution. The modernization of the electric grid, i.e., the smart grid, is anemerging combination of different technologies designed to bring about theelectrical power grid that is changing dramatically. Demand sidemanagement (DSM) allow customers to be more involved in contributors tothe power systems to achieve system goals by scheduling their shiftableload. Effective DSM systems require the participation of customers in thesystem that can be done in a fair system. This paper focuses primarily ontechniques of DSM and demand responses (DR), including schedulingapproaches and strategies for optimal savings.
This paper provides a new approach to reducing high-order harmonics in 400 Hz inverter using a three-level neutral-point clamped (NPC) converter. A voltage control loop using the harmonic compensation combined with NPC clamping diode control technology. The capacitor voltage imbalance also causes harmonics in the output voltage. For 400 Hz inverter, maintain a balanced voltage between the two input (direct current) (DC) capacitors is difficult because the pulse width modulation (PWM) modulation frequency ratio is low compared to the frequency of the output voltage. A method of determining the current flowing into the capacitor to control the voltage on the two balanced capacitors to ensure fast response reversal is also given in this paper. The combination of a high-harmonic resonator controller and a neutral-point voltage controller working together on the 400 Hz NPC inverter structure is given in this paper.
New Structure for Photovoltaic SystemApplications with Maximum Power Point Tr...IAES-IJPEDS
This paper recommendes a new structure for photovoltaicsystems with a new inverter topology. A quasi-Z-source DC-DC converter with capability of dividing its output voltage to the same voltages and tracking maximum power point is proposed. The proportional-integral incremental conductance method is used for maximum power point tracking. The new recommended inverter topology is linked to quasi-Z-source converter for transferring power. For triggering inverter switches, alternate phase opposition disposition switching technique is utilized. A comparison is drawn between suggested multilevel inverter topology and other conventional multilevel inverter topologies. Description of proposed structure along with detailed simulation results that verify its feasibility are given to demonstrate the availability of the proposed system by MATLAB/Simulink software.
With the dominating utility of the internet, it becomes critical to manage the efficiency and reliability of telecom and datacenter, as the power consumption of the involved equipment also increases. Much power being wasted through the power conversion stages by converting AC voltage to DC voltage and then stepping down to lower voltages to connect to information and communication technology (ICT) equipment. 48/12 VDC is the standard DC bus architecture to serve the end utility equipment. This voltage level is further processed to multiple lower voltages to power up the internal auxiliary circuits. Power losses are involved when it is converted from higher voltage to lower voltages. Therefore, the efficiency of power conversion is lower. There is a need to increase the efficiency by minimizing the power losses which occur due to the conversion stages. Different methods are available to increase the efficiency of a system by optimizing the converter topologies, semiconductor materials and control methods. There is another possibility of increasing the efficiency by changing the architecture of a system by increasing the DC bus voltage to higher voltages to optimize the losses. This paper presents a review of available high voltage options for telecom power distribution and developments, implementations and challenges across the world.
This paper deals with an advanced design for a pump powered by solar energyto supply agricultural lands with water and also the maximum power point is used to extract the maximum value of the energy available inside the solar panels and comparing between techniques MPPT such as Incremental conductance, perturb & observe, fractional short current circuit, and fractional open voltage circuit to find the best technique among these. The solar system is designed with main parts: photovoltaic (PV) panel, direct current/direct current (DC/DC) converter, inverter, filter, and in addition, the battery is used to save energy in the event that there is an increased demand for energy and not to provide solar radiation, as well as saving energy in the case of generation more than demand. This work was done using the matrix laboratory (MATLAB) simulink program.
Alternating current (AC) electrical drives mainly require smaller current (or torque) ripples and lower total harmonic distortion (THD) of voltage for excellent drive performances. Normally, in practice, to achieve these requirements, the inverter needs to be operated at high switching frequency. By operating at high switching frequency, the size of filter can be reduced. However, the inverter which oftenly employs insulated gate bipolar transistor (IGBT) for high power applications cannot be operated at high switching frequency. This is because, the IGBT switching frequency cannot be operated above 50 kHz due to its thermal restrictions. This paper proposes an alternate switching strategy to enable the use of IGBT for operating the inverter at high switching frequency to improve THD performances. In this strategy, each IGBT in a group of switches in the modified inverter circuit will operate the switching frequency at one-fourth of the inverter switching frequency. The alternate switching is implemented using simple analog and digital integrated circuits.
Embedded fuzzy controller for water level control IJECEIAES
This article presents the design of a fuzzy controller embedded in a microcontroller aimed at implementing a low-cost, modular process control system. The fuzzy system's construction is based on a classical proportional and derivative controller, where inputs of error and its derivate depend on the difference between the desired setpoint and the actual level; the goal is to control the water level of coupled tanks. The process is oriented to control based on the knowledge that facilitates the adjustment of the output variable without complex mathematical modeling. In different response tests of the fuzzy controller, a maximum over-impulse greater than 8% or a steady-state error greater than 2.1% was not evidenced when varying the setpoint.
Electricity is a major source of energy for fast growing population and the use of nonrenewable source is harmful for our environment. This reason belongs to devastating of environment, so it is required to take immediate action to solve these problems which result the solar energy development. Production of a solar energy can be maximizing if we use solar follower. The major part of solar panels is microcontroller with arrangement of LDR sensor is used to follow the sun, where the sensors is less efficient to track the sun because of the low sensitivity of LDR. We are proposing a method to track sun more effetely with the help of both LDR sensors and image processing. This type of mechanism can track sun with the help of image processing software which combines both result of sensors and processed sun image to control the solar panel. The combination of both software and hardware can control thousands of solar panels in solar power plants.
The growing demand for electricity and the increasing integration of clean energies into the electrical grids requires the multiplication and reinforcement of high-voltage direct current (HVDC) projects throughout the world and demonstrates the interest in this electricity transmission technology. The transmitting system of the voltage source converter-high-voltage direct current (VSC-HVDC) consists primarily of two converter stations that are connected by a dc cable. In this paper, a nonlinear control based on the backstepping approach is proposed to improve the dynamic performance of a VSC-HVDC transmission system, these transport systems are characterized by different complexities such as parametric uncertainties, coupled state variables, neglected dynamics, presents a very interesting research topic. Our contribution through adaptive control based on the backstepping approach allows regulating the direct current (DC) bus voltage and the active and reactive powers of the converter stations. Finally, the validity of the proposed control has been verified under various operating conditions by simulation in the MATLAB/Simulink environment.
When the irradiance distribution over the photovoltaic panels is uniform, the pursuit of the maximum power point is not reached, which has allowed several researchers to use traditional MPPT techniques to solve this problem Among these techniques a PSO algorithm is used to have the maximum global power point (GMPPT) under partial shading. On the other hand, this one is not reliable vis-à-vis the pursuit of the MPPT. Therefore, in this paper we have treated another technique based on a new modified PSO algorithm so that the power can reach its maximum point. The PSO algorithm is based on the heuristic method which guarantees not only the obtaining of MPPT but also the simplicity of control and less expensive of the system. The results are obtained using MATLAB show that the proposed modified PSO algorithm performs better than conventional PSO and is robust to different partial shading models.
The electrical and environmental parameters of polymer solar cells (PSC) provide important information on their performance. In the present article we study the influence of temperature on the voltage-current (I-V) characteristic at different temperatures from 10 °C to 90 °C, and important parameters like bandgap energy Eg, and the energy conversion efficiency η. The one-diode electrical model, normally used for semiconductor cells, has been tested and validated for the polemeral junction. The PSC used in our study are formed by the poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM). Our technique is based on the combination of two steps; the first use the Least Mean Squares (LMS) method while the second use the Newton-Raphson algorithm. The found results are compared to other recently published works, they show that the developed approach is very accurate. This precision is proved by the minimal values of statistical errors (RMSE) and the good agreement between both the experimental data and the I-V simulated curves. The obtained results show a clear and a monotonic dependence of the cell efficiency on the studied parameters.
Direct current (DC) electronic load is a useful equipment for testing the electrical system. It can emulate various load at a high rating. The electronic load requires a power converter to operate and a linear regulator is a common option. Nonetheless, it is hard to control due to the temperature variation. This paper proposed a DC electronic load using the boost converter. The proposed electronic load operates in the continuous current mode and control using the integral controller. The electronic load using the boost converter is compared with the electronic load using the linear regulator. The results show that the boost converter able to operate as an electronic load with an error lower than 0.5% and response time lower than 13 ms.
This paper presents simulation and experimental results of anti-windup PI controller to improve induction machine speed control based on direct torque control (DTC) strategy. Problems like rollover can arise in conventional PI controller due to saturation effect. In order to avoid such problems anti-windup PI controller is presented. This controller is simple for implementation in practice. The proposed anti-windup PI controller demonstrates better dynamic step changes response in speed in terms of overshoots. All simulation work was done using Simulink in the MATLAB software. The experimental results were obtained by practical implementation on a dSPACE 1104 board for a 1.5 KW induction machine. Simulation and experimental results have proven a good performance and verified the validity of the presented control strategy.
Temperature characteristics of FinFET based on channel fin width and working...IJECEIAES
This paper shows the temperature sensitivity of FinFET and the possibility of using FinFET as a temperature nano sensor based on Fin width of transistor. The multi-gate field effect transistor (MuGFET) simulation tool is used to examine the temperature effect on FinFET characteristics. Current-voltage characteristics with various temperatures and channel Fin width (W F = 5,10,20,40 and 80 nm) are at first simulated, the diode mode connection has been used in this study. The best temperature sensitivity of the FinFET is has been considered under the biggest ∆I at the working voltage V DD with range of 0–5 V. According to the results, the temperature sensitivity increased linearly with all the range of channel Fin width (5-80 nm), also, the lower gate Fin width (W F =5nm) with higher sensitivity can achieved with lower working voltage (V DD =1.25 V).
This paper analyses the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the diameter (D.ch) of channel. In addition, it also investigates the possibility of utilizing SiNWT as a Nano- temperature sensor. The MuGFET simulation tool has been utilized to conduct a comprehensive simulation to evaluate both electrical and temperature characteristics of SiNWT. Current-voltage characteristics with different values of temperature and with a varying diameter of the Nano wire channel (D.ch = 80, 40, 20 and 10 nm), were simulated. Diode operating mode connection of the transistor is suggested for measuring the temperature sensitivity of SiNWT. As simulation results demonstrated, the best temperature sensitivity was occurred at lower temperature with increasing the channel diameter. We also illustrate the impact of varying temperature and channel diameter on electrical characteristics of SiNWT including, Subthreshold Swing (SS), Threshold voltage (V.th), and Drain-induced barrier lowering (DIBL), which were proportionally increased with the operating temperature.
Convergence analysis of the triangular-based power flow method for AC distribu...IJECEIAES
This paper addresses the convergence analysis of the triangular-based power flow (PF) method in alternating current radial distribution networks. The PF formulation is made via upper-triangular matrices, which enables finding a general iterative PF formula that does not require admittance matrix calculations. The convergence analysis of this iterative formula is carried out by applying the Banach fixed-point theorem (BFPT), which allows demonstrating that under an adequate voltage profile the triangular-based PF always converges. Numerical validations are made, on the well-known 33 and 69 distribution networks test systems. Gauss-seidel, newton-raphson, and backward/forward PF methods are considered for the sake of comparison. All the simulations are carried out in MATLAB software.
Intelligent control of battery energy storage for microgrid energy management...IJECEIAES
In this paper, an intelligent control strategy for a microgrid system consisting of Photovoltaic panels, grid-connected, and li-ion battery energy storage systems proposed. The energy management based on the managing of battery charging and discharging by integration of a smart controller for DC/DC bidirectional converter. The main novelty of this solution are the integration of artificial neural network (ANN) for the estimation of the battery state of charge (SOC) and for the control of bidirectional converter. The simulation results obtained in the MATLAB/Simulink environment explain the performance and the robust of the proposed control technique.
A new bidirectional multilevel inverter topology with a high number of voltage levels with a very reduced number of power components is proposed in this paper. Only TEN power switches and four asymmetric DC voltage sources are used to generate 25 voltage levels in this new topology. The proposed multilevel converter is more suitable for e-mobility and photovoltaic applications where the overall energy source can be composed of a few units/associations of several basic source modules. Several benefits are provided by this new topology: Highly sinusoidal current and voltage waveforms, low Total Harmonic Distortion, very low switching losses, and minimum cost and size of the device. For optimum control of this 25-level voltage inverter, a special Modified Hybrid Modulation technique is performed. The proposed 25-level inverter is compared to various topologies published recently in terms of cost, the number of active power switches, clamped diodes, flying capacitors, DC floating capacitors, and the number of DC voltage sources. This comparison clearly shows that the proposed topology is cost-effective, compact, and very efficient. The effectiveness and the good performance of the proposed multilevel power converter (with and without PWM control) are verified and checked by computational simulations.
Various demand side management techniques and its role in smart grid–the stat...IJECEIAES
The current lifestyle of humanity relies heavily on energy consumption, thusrendering it an inevitable need. An ever-increasing demand for energy hasresulted from the increasing population. Most of this demand is met by thetraditional sources that continuously deplete and raise significantenvironmental issues. The existing power structure of developing nations isaging, unstable, and unfeasible, further prolonging the problem. The existingelectricity grid is unstable, vulnerable to blackouts and disruption, has hightransmission losses, low quality of power, insufficient electricity supply, anddiscourages distributed energy sources from being incorporated. Mitigatingthese problems requires a complete redesign of the system of powerdistribution. The modernization of the electric grid, i.e., the smart grid, is anemerging combination of different technologies designed to bring about theelectrical power grid that is changing dramatically. Demand sidemanagement (DSM) allow customers to be more involved in contributors tothe power systems to achieve system goals by scheduling their shiftableload. Effective DSM systems require the participation of customers in thesystem that can be done in a fair system. This paper focuses primarily ontechniques of DSM and demand responses (DR), including schedulingapproaches and strategies for optimal savings.
This paper provides a new approach to reducing high-order harmonics in 400 Hz inverter using a three-level neutral-point clamped (NPC) converter. A voltage control loop using the harmonic compensation combined with NPC clamping diode control technology. The capacitor voltage imbalance also causes harmonics in the output voltage. For 400 Hz inverter, maintain a balanced voltage between the two input (direct current) (DC) capacitors is difficult because the pulse width modulation (PWM) modulation frequency ratio is low compared to the frequency of the output voltage. A method of determining the current flowing into the capacitor to control the voltage on the two balanced capacitors to ensure fast response reversal is also given in this paper. The combination of a high-harmonic resonator controller and a neutral-point voltage controller working together on the 400 Hz NPC inverter structure is given in this paper.
New Structure for Photovoltaic SystemApplications with Maximum Power Point Tr...IAES-IJPEDS
This paper recommendes a new structure for photovoltaicsystems with a new inverter topology. A quasi-Z-source DC-DC converter with capability of dividing its output voltage to the same voltages and tracking maximum power point is proposed. The proportional-integral incremental conductance method is used for maximum power point tracking. The new recommended inverter topology is linked to quasi-Z-source converter for transferring power. For triggering inverter switches, alternate phase opposition disposition switching technique is utilized. A comparison is drawn between suggested multilevel inverter topology and other conventional multilevel inverter topologies. Description of proposed structure along with detailed simulation results that verify its feasibility are given to demonstrate the availability of the proposed system by MATLAB/Simulink software.
With the dominating utility of the internet, it becomes critical to manage the efficiency and reliability of telecom and datacenter, as the power consumption of the involved equipment also increases. Much power being wasted through the power conversion stages by converting AC voltage to DC voltage and then stepping down to lower voltages to connect to information and communication technology (ICT) equipment. 48/12 VDC is the standard DC bus architecture to serve the end utility equipment. This voltage level is further processed to multiple lower voltages to power up the internal auxiliary circuits. Power losses are involved when it is converted from higher voltage to lower voltages. Therefore, the efficiency of power conversion is lower. There is a need to increase the efficiency by minimizing the power losses which occur due to the conversion stages. Different methods are available to increase the efficiency of a system by optimizing the converter topologies, semiconductor materials and control methods. There is another possibility of increasing the efficiency by changing the architecture of a system by increasing the DC bus voltage to higher voltages to optimize the losses. This paper presents a review of available high voltage options for telecom power distribution and developments, implementations and challenges across the world.
This paper deals with an advanced design for a pump powered by solar energyto supply agricultural lands with water and also the maximum power point is used to extract the maximum value of the energy available inside the solar panels and comparing between techniques MPPT such as Incremental conductance, perturb & observe, fractional short current circuit, and fractional open voltage circuit to find the best technique among these. The solar system is designed with main parts: photovoltaic (PV) panel, direct current/direct current (DC/DC) converter, inverter, filter, and in addition, the battery is used to save energy in the event that there is an increased demand for energy and not to provide solar radiation, as well as saving energy in the case of generation more than demand. This work was done using the matrix laboratory (MATLAB) simulink program.
Alternating current (AC) electrical drives mainly require smaller current (or torque) ripples and lower total harmonic distortion (THD) of voltage for excellent drive performances. Normally, in practice, to achieve these requirements, the inverter needs to be operated at high switching frequency. By operating at high switching frequency, the size of filter can be reduced. However, the inverter which oftenly employs insulated gate bipolar transistor (IGBT) for high power applications cannot be operated at high switching frequency. This is because, the IGBT switching frequency cannot be operated above 50 kHz due to its thermal restrictions. This paper proposes an alternate switching strategy to enable the use of IGBT for operating the inverter at high switching frequency to improve THD performances. In this strategy, each IGBT in a group of switches in the modified inverter circuit will operate the switching frequency at one-fourth of the inverter switching frequency. The alternate switching is implemented using simple analog and digital integrated circuits.
Embedded fuzzy controller for water level control IJECEIAES
This article presents the design of a fuzzy controller embedded in a microcontroller aimed at implementing a low-cost, modular process control system. The fuzzy system's construction is based on a classical proportional and derivative controller, where inputs of error and its derivate depend on the difference between the desired setpoint and the actual level; the goal is to control the water level of coupled tanks. The process is oriented to control based on the knowledge that facilitates the adjustment of the output variable without complex mathematical modeling. In different response tests of the fuzzy controller, a maximum over-impulse greater than 8% or a steady-state error greater than 2.1% was not evidenced when varying the setpoint.
Electricity is a major source of energy for fast growing population and the use of nonrenewable source is harmful for our environment. This reason belongs to devastating of environment, so it is required to take immediate action to solve these problems which result the solar energy development. Production of a solar energy can be maximizing if we use solar follower. The major part of solar panels is microcontroller with arrangement of LDR sensor is used to follow the sun, where the sensors is less efficient to track the sun because of the low sensitivity of LDR. We are proposing a method to track sun more effetely with the help of both LDR sensors and image processing. This type of mechanism can track sun with the help of image processing software which combines both result of sensors and processed sun image to control the solar panel. The combination of both software and hardware can control thousands of solar panels in solar power plants.
The growing demand for electricity and the increasing integration of clean energies into the electrical grids requires the multiplication and reinforcement of high-voltage direct current (HVDC) projects throughout the world and demonstrates the interest in this electricity transmission technology. The transmitting system of the voltage source converter-high-voltage direct current (VSC-HVDC) consists primarily of two converter stations that are connected by a dc cable. In this paper, a nonlinear control based on the backstepping approach is proposed to improve the dynamic performance of a VSC-HVDC transmission system, these transport systems are characterized by different complexities such as parametric uncertainties, coupled state variables, neglected dynamics, presents a very interesting research topic. Our contribution through adaptive control based on the backstepping approach allows regulating the direct current (DC) bus voltage and the active and reactive powers of the converter stations. Finally, the validity of the proposed control has been verified under various operating conditions by simulation in the MATLAB/Simulink environment.
When the irradiance distribution over the photovoltaic panels is uniform, the pursuit of the maximum power point is not reached, which has allowed several researchers to use traditional MPPT techniques to solve this problem Among these techniques a PSO algorithm is used to have the maximum global power point (GMPPT) under partial shading. On the other hand, this one is not reliable vis-à-vis the pursuit of the MPPT. Therefore, in this paper we have treated another technique based on a new modified PSO algorithm so that the power can reach its maximum point. The PSO algorithm is based on the heuristic method which guarantees not only the obtaining of MPPT but also the simplicity of control and less expensive of the system. The results are obtained using MATLAB show that the proposed modified PSO algorithm performs better than conventional PSO and is robust to different partial shading models.
The electrical and environmental parameters of polymer solar cells (PSC) provide important information on their performance. In the present article we study the influence of temperature on the voltage-current (I-V) characteristic at different temperatures from 10 °C to 90 °C, and important parameters like bandgap energy Eg, and the energy conversion efficiency η. The one-diode electrical model, normally used for semiconductor cells, has been tested and validated for the polemeral junction. The PSC used in our study are formed by the poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM). Our technique is based on the combination of two steps; the first use the Least Mean Squares (LMS) method while the second use the Newton-Raphson algorithm. The found results are compared to other recently published works, they show that the developed approach is very accurate. This precision is proved by the minimal values of statistical errors (RMSE) and the good agreement between both the experimental data and the I-V simulated curves. The obtained results show a clear and a monotonic dependence of the cell efficiency on the studied parameters.
Direct current (DC) electronic load is a useful equipment for testing the electrical system. It can emulate various load at a high rating. The electronic load requires a power converter to operate and a linear regulator is a common option. Nonetheless, it is hard to control due to the temperature variation. This paper proposed a DC electronic load using the boost converter. The proposed electronic load operates in the continuous current mode and control using the integral controller. The electronic load using the boost converter is compared with the electronic load using the linear regulator. The results show that the boost converter able to operate as an electronic load with an error lower than 0.5% and response time lower than 13 ms.
This paper presents simulation and experimental results of anti-windup PI controller to improve induction machine speed control based on direct torque control (DTC) strategy. Problems like rollover can arise in conventional PI controller due to saturation effect. In order to avoid such problems anti-windup PI controller is presented. This controller is simple for implementation in practice. The proposed anti-windup PI controller demonstrates better dynamic step changes response in speed in terms of overshoots. All simulation work was done using Simulink in the MATLAB software. The experimental results were obtained by practical implementation on a dSPACE 1104 board for a 1.5 KW induction machine. Simulation and experimental results have proven a good performance and verified the validity of the presented control strategy.
Temperature characteristics of FinFET based on channel fin width and working...IJECEIAES
This paper shows the temperature sensitivity of FinFET and the possibility of using FinFET as a temperature nano sensor based on Fin width of transistor. The multi-gate field effect transistor (MuGFET) simulation tool is used to examine the temperature effect on FinFET characteristics. Current-voltage characteristics with various temperatures and channel Fin width (W F = 5,10,20,40 and 80 nm) are at first simulated, the diode mode connection has been used in this study. The best temperature sensitivity of the FinFET is has been considered under the biggest ∆I at the working voltage V DD with range of 0–5 V. According to the results, the temperature sensitivity increased linearly with all the range of channel Fin width (5-80 nm), also, the lower gate Fin width (W F =5nm) with higher sensitivity can achieved with lower working voltage (V DD =1.25 V).
This paper analyses the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the diameter (D.ch) of channel. In addition, it also investigates the possibility of utilizing SiNWT as a Nano- temperature sensor. The MuGFET simulation tool has been utilized to conduct a comprehensive simulation to evaluate both electrical and temperature characteristics of SiNWT. Current-voltage characteristics with different values of temperature and with a varying diameter of the Nano wire channel (D.ch = 80, 40, 20 and 10 nm), were simulated. Diode operating mode connection of the transistor is suggested for measuring the temperature sensitivity of SiNWT. As simulation results demonstrated, the best temperature sensitivity was occurred at lower temperature with increasing the channel diameter. We also illustrate the impact of varying temperature and channel diameter on electrical characteristics of SiNWT including, Subthreshold Swing (SS), Threshold voltage (V.th), and Drain-induced barrier lowering (DIBL), which were proportionally increased with the operating temperature.
A temperature characterization of (Si-FinFET) based on channel oxide thicknessTELKOMNIKA JOURNAL
This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness–based temperature characteristics is useful to optimized electrical and temperature characteristics of FinFET. Current–voltage characteristics with different temperatures and gate oxide thickness values (Tox=1, 2, 3, 4, and 5 nm) are initially simulated, and the diode mode connection is considered to measure FinFET’s temperature sensitivity. Finding the best temperature sensitivity of FinFET is based on the largest change in current (ΔI) within a working voltage range of 0–5 V. According to the results, the temperature sensitivity of FinFET increases linearly with oxide thickness within the range of 1–5 nm, furthermore, the threshold voltage and drain-induced barrier lowering increase with increasing oxide thickness. Also, the subthreshold swing (SS) is close to the ideal value at the minimum oxide thickness (1 nm) then increases and diverges with increasing oxide thickness. So, the best oxide thickness (nearest SS value to the ideal one) of FinFET under the conditions described in this research is 1 nm.
Electrical characterization of si nanowire GAA-TFET based on dimensions downs...IJECEIAES
This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (V T ). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics.
LINEARITY AND ANALOG PERFORMANCE ANALYSIS OF DOUBLE GATE TUNNEL FET: EFFECT O...VLSICS Design
The linearity and analog performance of a Silicon Double Gate Tunnel Field Effect Transistor (DG-TFET) is investigated and the impact of elevated temperature on the device performance degradation has been studied. The impact on the device performance due to the rise in temperature and a gate stack (GS) architecture has also been investigated for the case of Silicon DG-MOSFET and a comparison with DGTFET is made. The parameters overning the analog performance and linearity have been studied, and high frequency simulations are carried out to determine the cut-off frequency of the device and its temperature dependence.
Design & Performance Analysis of DG-MOSFET for Reduction of Short Channel Eff...IJERA Editor
An aggressive scaling of conventional MOSFETs channel length reduces below 100nm and gate oxide thickness below 3nm to improved performance and packaging density. Due to this scaling short channel effect (SCEs) like threshold voltage, Subthreshold slope, ON current and OFF current plays a major role in determining the performance of scaled devices. The double gate (DG) MOSFETS are electro-statically superior to a single gate (SG) MOSFET and allows for additional gate length scaling. Simulation work on both devices has been carried out and presented in paper. The comparative study had been carried out for threshold voltage (VT), Subthreshold slope (Sub VT), ION and IOFF Current. It is observed that DG MOSFET provide good control on leakage current over conventional Bulk (Single Gate) MOSFET. The VT (Threshold Voltage) is 2.7 times greater than & ION of DG MOSFET is 2.2 times smaller than the conventional Bulk (Single Gate) MOSFET.
Characterization of silicon tunnel field effect transistor based on charge pl...IJEECSIAES
The aim of the proposed paper is an analytical model and realization of the characteristics for tunnel field-effect transistor (TFET) based on charge plasma (CP). One of the most applications of the TFET device which operates based on CP technique is the biosensor. CP-TFET is to be used as an effective device to detect the uncharged molecules of the bio-sample solution. Charge plasma is one of some techniques that recently invited to induce charge carriers inside the devices. In this proposed paper we use a high work function in the source (ϕ=5.93 eV) to induce hole charges and we use a lower work function in drain (ϕ=3.90 eV) to induce electron charges. Many electrical characterizations in this paper are considered to study the performance of this device like a current drain (ID) versus voltage gate (Vgs), ION/IOFF ratio, threshold voltage (VT) transconductance (gm), and subthreshold swing (SS). The signification of this paper comes into view enhancement the performance of the device. Results show that high dielectric (K=12), oxide thickness (Tox=1 nm), channel length (Lch=42 nm), and higher work function for the gate (ϕ=4.5 eV) tend to best charge plasma silicon tunnel field-effect transistor characterization.
haracterization of silicon tunnel field effect transistor based on charge plasmanooriasukmaningtyas
The aim of the proposed paper is an analytical model and realization of the characteristics for tunnel field-effect transistor (TFET) based on charge plasma (CP). One of the most applications of the TFET device which operates based on CP technique is the biosensor. CP-TFET is to be used as an effective device to detect the uncharged molecules of the bio-sample solution. Charge plasma is one of some techniques that recently invited to induce charge carriers inside the devices. In this proposed paper we use a high work function in the source (ϕ=5.93 eV) to induce hole charges and we use a lower work function in drain (ϕ=3.90 eV) to induce electron charges. Many electrical characterizations in this paper are considered to study the performance of this device like a current drain (ID) versus voltage gate (Vgs), ION/IOFF ratio, threshold voltage (VT) transconductance (gm), and sub-threshold swing (SS). The signification of this paper comes into view enhancement the performance of the device. Results show that high dielectric (K=12), oxide thickness (Tox=1 nm), channel length (Lch=42 nm), and higher work function for the gate (ϕ=4.5 eV) tend to best charge plasma silicon tunnel field-effect transistor characterization.
Investigation and design of ion-implanted MOSFET based on (18 nm) channel lengthTELKOMNIKA JOURNAL
The aim of this study is to invistgate the characteristics of Si-MOSFET with 18 nm length of ion implemented channel. Technology computer aided design (TCAD) tool from Silvaco was used to simulate the MOSFET’s designed structure in this research. The results indicate that the MOSFET with 18 nm channel length has cut-off frequency of 548 GHz and transconductance of 967 μS, which are the most important factors in calculating the efficiency and improving the performance of the device. Also, it has threshold voltage of (-0.17 V) in addition obtaining a relatively small DIBL (55.11 mV/V). The subthreshold slope was in high value of 307.5 mV/dec. and this is one of the undesirable factors for the device results by short channel effect, but it does not reduce its performance and efficiency in general.
Effects of downscaling channel dimensions on electrical characteristics of In...IJECEIAES
In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).
THRESHOLD VOLTAGE CONTROL SCHEMES IN FINFETSVLSICS Design
Conventionally polysilicon is used in MOSFETs for gate material. Doping of polysilicon and thus changing the workfunction is carried out to change the threshold voltage. Additionally polysilicon is not favourable as gate material for smaller dimensional devices because of its high thermal budget process and degradation due to the depletion of the doped polysilicon, thus metal gate is preferred over polysilicon. Control of workfunction in metal gate is a challenging task. The use of metal alloys as gate materials for variable gate workfunction has been already reported in literature. In this work various threshold voltage techniques has been analyzed and a novel aligned dual metal gate technique is proposed for threshold voltage control in FinFETs.
Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
A proposal and simulation analysis for a novel architecture of gate-all-aroun...IJECEIAES
A proposal for a novel gate-all-around (GAA) polycrystalline silicon nanowire (poly-SiNW) field effect transistor (FET) is presented and discussed in this paper. The device architecture is based on the realization of poly-SiNW in a V-shaped cavity obtained by tetra methyl ammonium hydroxide (TMAH) etch of monocrystalline silicon (100). The device’s behavior is simulated using Silvaco commercial software, including the density of states (DOS) model described by the double exponential distribution of acceptor trap density within the gap. The electric field, potential, and free electron concentration are analyzed in different nanowire regions to investigate the device's performance. The results show good performance despite the high density of deep states in poly-SiNW. This can be explained by the strong electric field caused by the corner effect in the nanowire, which favors the ionization of the acceptor traps and increases the free electron concentration.
Geometric and process design of ultra-thin junctionless double gate vertical ...IJECEIAES
The junctionless MOSFET architectures appear to be attractive in realizing the Moore’s law prediction. In this paper, a comprehensive 2-D simulation on junctionless vertical double-gate MOSFET (JLDGVM) under geometric and process consideration was introduced in order to obtain excellent electrical characteristics. Geometrical designs such as channel length (Lch) and pillar thickness (Tp) were considered and the impact on the electrical performance was analyzed. The influence of doping concentration and metal gate work function (WF) were further investigated for achieving better performance. The results show that the shorter Lch can boost the drain current (ID) of n-JLDGVM and p-JLDGVM by approximately 68% and 70% respectively. The ID of the n-JLVDGM and p-JLVDGM could possibly boost up to 42% and 78% respectively as the Tp is scaled down from 11nm to 8nm. The channel doping (Nch) is also a critical parameter, affecting the electrical performance of both n-JLDGVM and p-JLDGVM in which 15% and 39% improvements are observed in their respective ID as the concentration level is increased from 1E18 to 9E18 atom/cm3. In addition, the adjustment of threshold voltage can be realized by varying the metal WF.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
IMPACT OF DEVICE PARAMETERS OF TRIPLE GATE SOI-FINFET ON THE PERFORMANCE OF C...VLSICS Design
A simulation based design evaluation is reported for SOI FinFETs at 22nm gate length. The impact of device parameters on the static power dissipation and delay of a CMOS inverter is presented. Fin dimensions such as Fin width and height are varied. For a given gate oxide thickness increasing the fin height and fin width degrades the SCEs, while improves the performance. It was found that reducing the fin thickness was beneficial in reducing the off state leakage current (IOFF), while reducing the fin height was beneficial in reducing the gate leakage current (IGATE). It was found that Static power dissipation of the inverter increases with fin height due to the increase in leakage current, whereas delay decreased with increase fin width due to higher on current. The performance of the inverter decreased with the downscaling of the gate oxide thickness due to higher gate leakage current and gate capacitance.
Resonant-tunneling-diode effect in Si-based double-barrier structure sputtere...IJRES Journal
This paper presents the resonant-tunneling-diode (RTD) effect in a SiO2/n-Si/SiO2/p-Si double-barrier structural thin films fabricated using radio frequency (RF) magnetron sputtering at room temperature (300 K). The implementation of a circuit prototype is first accomplished by modulating a Si-based RTD with a solar-cell bias voltage. The important electrical properties of the peak current density and peak-to-valley current ratio (PVCR) are 184 nA/cm2 and 1.67, respectively. The connection between the two RTDs in series is biased by a solar cell. The value of the switching transition time is 24.37 μs; oscillation occurs with an operating frequency of 41.6 KHz. In semiconductor applications, the developed RTD is characterized by stability, enduring environmentally elevated temperature and relative humidity.
Optimization of 14 nm double gate Bi-GFET for lower leakage currentTELKOMNIKA JOURNAL
In recent years, breakthroughs in electronics technology have resulted in upgrades in the physical properties of the metal oxide semiconductor field effect transistor (MOSFET) toward smaller sizes and improvements in both quality and performance. Hence, the growth field effect transistor (GFET) is being promoted as one of the worthy contenders due to its superior material characteristics. A 14 nm horizontal double-gate bilayer graphene FET with a high-k/metal gate is proposed, which is composed of hafnium dioxide (HfO2) and tungsten silicide (WSix) respectively. It is simulated and modelled using silvaco ATHENA and ATLAS technology computer-aided design (TCAD) tools, as well as the Taguchi L9 orthogonal array (OA). The threshold voltage (VTH) adjustment implant dose, VTH adjustment implant energy, source/drain (S/D) implant dose, and S/D implant energy have all been investigated as process parameters. While the VTH adjustment tilt angle and the S/D implant tilt angle have both been investigated as noise factors. When compared to the initial findings before optimization, the IOFF has a value of 29.579 nA/µm, indicating a significant improvement. Findings from the optimization technique demonstrate excellent device performance with an IOFF of 28.564 nA/µm, which is closer to the international technology roadmap semiconductor (ITRS) 2013 target than before
Similar to The impact of channel fin width on electrical characteristics of Si-FinFET (20)
Bibliometric analysis highlighting the role of women in addressing climate ch...IJECEIAES
Fossil fuel consumption increased quickly, contributing to climate change
that is evident in unusual flooding and draughts, and global warming. Over
the past ten years, women's involvement in society has grown dramatically,
and they succeeded in playing a noticeable role in reducing climate change.
A bibliometric analysis of data from the last ten years has been carried out to
examine the role of women in addressing the climate change. The analysis's
findings discussed the relevant to the sustainable development goals (SDGs),
particularly SDG 7 and SDG 13. The results considered contributions made
by women in the various sectors while taking geographic dispersion into
account. The bibliometric analysis delves into topics including women's
leadership in environmental groups, their involvement in policymaking, their
contributions to sustainable development projects, and the influence of
gender diversity on attempts to mitigate climate change. This study's results
highlight how women have influenced policies and actions related to climate
change, point out areas of research deficiency and recommendations on how
to increase role of the women in addressing the climate change and
achieving sustainability. To achieve more successful results, this initiative
aims to highlight the significance of gender equality and encourage
inclusivity in climate change decision-making processes.
Voltage and frequency control of microgrid in presence of micro-turbine inter...IJECEIAES
The active and reactive load changes have a significant impact on voltage
and frequency. In this paper, in order to stabilize the microgrid (MG) against
load variations in islanding mode, the active and reactive power of all
distributed generators (DGs), including energy storage (battery), diesel
generator, and micro-turbine, are controlled. The micro-turbine generator is
connected to MG through a three-phase to three-phase matrix converter, and
the droop control method is applied for controlling the voltage and
frequency of MG. In addition, a method is introduced for voltage and
frequency control of micro-turbines in the transition state from gridconnected mode to islanding mode. A novel switching strategy of the matrix
converter is used for converting the high-frequency output voltage of the
micro-turbine to the grid-side frequency of the utility system. Moreover,
using the switching strategy, the low-order harmonics in the output current
and voltage are not produced, and consequently, the size of the output filter
would be reduced. In fact, the suggested control strategy is load-independent
and has no frequency conversion restrictions. The proposed approach for
voltage and frequency regulation demonstrates exceptional performance and
favorable response across various load alteration scenarios. The suggested
strategy is examined in several scenarios in the MG test systems, and the
simulation results are addressed.
Enhancing battery system identification: nonlinear autoregressive modeling fo...IJECEIAES
Precisely characterizing Li-ion batteries is essential for optimizing their
performance, enhancing safety, and prolonging their lifespan across various
applications, such as electric vehicles and renewable energy systems. This
article introduces an innovative nonlinear methodology for system
identification of a Li-ion battery, employing a nonlinear autoregressive with
exogenous inputs (NARX) model. The proposed approach integrates the
benefits of nonlinear modeling with the adaptability of the NARX structure,
facilitating a more comprehensive representation of the intricate
electrochemical processes within the battery. Experimental data collected
from a Li-ion battery operating under diverse scenarios are employed to
validate the effectiveness of the proposed methodology. The identified
NARX model exhibits superior accuracy in predicting the battery's behavior
compared to traditional linear models. This study underscores the
importance of accounting for nonlinearities in battery modeling, providing
insights into the intricate relationships between state-of-charge, voltage, and
current under dynamic conditions.
Smart grid deployment: from a bibliometric analysis to a surveyIJECEIAES
Smart grids are one of the last decades' innovations in electrical energy.
They bring relevant advantages compared to the traditional grid and
significant interest from the research community. Assessing the field's
evolution is essential to propose guidelines for facing new and future smart
grid challenges. In addition, knowing the main technologies involved in the
deployment of smart grids (SGs) is important to highlight possible
shortcomings that can be mitigated by developing new tools. This paper
contributes to the research trends mentioned above by focusing on two
objectives. First, a bibliometric analysis is presented to give an overview of
the current research level about smart grid deployment. Second, a survey of
the main technological approaches used for smart grid implementation and
their contributions are highlighted. To that effect, we searched the Web of
Science (WoS), and the Scopus databases. We obtained 5,663 documents
from WoS and 7,215 from Scopus on smart grid implementation or
deployment. With the extraction limitation in the Scopus database, 5,872 of
the 7,215 documents were extracted using a multi-step process. These two
datasets have been analyzed using a bibliometric tool called bibliometrix.
The main outputs are presented with some recommendations for future
research.
Use of analytical hierarchy process for selecting and prioritizing islanding ...IJECEIAES
One of the problems that are associated to power systems is islanding
condition, which must be rapidly and properly detected to prevent any
negative consequences on the system's protection, stability, and security.
This paper offers a thorough overview of several islanding detection
strategies, which are divided into two categories: classic approaches,
including local and remote approaches, and modern techniques, including
techniques based on signal processing and computational intelligence.
Additionally, each approach is compared and assessed based on several
factors, including implementation costs, non-detected zones, declining
power quality, and response times using the analytical hierarchy process
(AHP). The multi-criteria decision-making analysis shows that the overall
weight of passive methods (24.7%), active methods (7.8%), hybrid methods
(5.6%), remote methods (14.5%), signal processing-based methods (26.6%),
and computational intelligent-based methods (20.8%) based on the
comparison of all criteria together. Thus, it can be seen from the total weight
that hybrid approaches are the least suitable to be chosen, while signal
processing-based methods are the most appropriate islanding detection
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and observe (P&O), have been modified. This research paper aims to
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An efficient security framework for intrusion detection and prevention in int...IJECEIAES
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Developing a smart system for infant incubators using the internet of things ...IJECEIAES
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A review on internet of things-based stingless bee's honey production with im...IJECEIAES
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A trust based secure access control using authentication mechanism for intero...IJECEIAES
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Seizure stage detection of epileptic seizure using convolutional neural networksIJECEIAES
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Analysis of driving style using self-organizing maps to analyze driver behaviorIJECEIAES
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Hyperspectral object classification using hybrid spectral-spatial fusion and ...IJECEIAES
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Saudi Arabia stands as a titan in the global energy landscape, renowned for its abundant oil and gas resources. It's the largest exporter of petroleum and holds some of the world's most significant reserves. Let's delve into the top 10 oil and gas projects shaping Saudi Arabia's energy future in 2024.
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When combined with 3D convolution and deep curriculum learning optimization (CLO), itsignificantly improves
the immunity of models against localized universal attacks by up to 40%. We evaluate our proposed approach
using contemporary CNN architectures and the modified Canadian Institute for Advanced Research (CIFAR-10
and CIFAR-100) and ImageNet Large Scale Visual Recognition Challenge (ILSVRC12) datasets, showcasing
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We have compiled the most important slides from each speaker's presentation. This year’s compilation, available for free, captures the key insights and contributions shared during the DfMAy 2024 conference.
NUMERICAL SIMULATIONS OF HEAT AND MASS TRANSFER IN CONDENSING HEAT EXCHANGERS...ssuser7dcef0
Power plants release a large amount of water vapor into the
atmosphere through the stack. The flue gas can be a potential
source for obtaining much needed cooling water for a power
plant. If a power plant could recover and reuse a portion of this
moisture, it could reduce its total cooling water intake
requirement. One of the most practical way to recover water
from flue gas is to use a condensing heat exchanger. The power
plant could also recover latent heat due to condensation as well
as sensible heat due to lowering the flue gas exit temperature.
Additionally, harmful acids released from the stack can be
reduced in a condensing heat exchanger by acid condensation. reduced in a condensing heat exchanger by acid condensation.
Condensation of vapors in flue gas is a complicated
phenomenon since heat and mass transfer of water vapor and
various acids simultaneously occur in the presence of noncondensable
gases such as nitrogen and oxygen. Design of a
condenser depends on the knowledge and understanding of the
heat and mass transfer processes. A computer program for
numerical simulations of water (H2O) and sulfuric acid (H2SO4)
condensation in a flue gas condensing heat exchanger was
developed using MATLAB. Governing equations based on
mass and energy balances for the system were derived to
predict variables such as flue gas exit temperature, cooling
water outlet temperature, mole fraction and condensation rates
of water and sulfuric acid vapors. The equations were solved
using an iterative solution technique with calculations of heat
and mass transfer coefficients and physical properties.
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Here is a blog on the role of electrical and electronics engineers in IOT. Let's dig in!!!!
For more such content visit: https://nttftrg.com/
The Role of Electrical and Electronics Engineers in IOT Technology.pdf
The impact of channel fin width on electrical characteristics of Si-FinFET
1. International Journal of Electrical and Computer Engineering (IJECE)
Vol. 12, No. 1, February 2022, pp. 201~207
ISSN: 2088-8708, DOI: 10.11591/ijece.v12i1.pp201-207 201
Journal homepage: http://ijece.iaescore.com
The impact of channel fin width on electrical characteristics of
Si-FinFET
Yousif Atalla1
, Yasir Hashim2
, Abdul Nasir Abd Ghafar1
1
Faculty of Electrical and Electronics Engineering Technology, University Malaysia Pahang (UMP), Pahang, Malaysia
2
Department of Computer Engineering, Faculty of Engineering, Tishk International University (TIU), Kurdistan-Erbil, Iraq
Article Info ABSTRACT
Article history:
Received Sep 3, 2020
Revised Jul 23, 2021
Accepted Aug 11, 2021
This paper studies the impact of fin width of channel on temperature and
electrical characteristics of fin field-effect transistor (FinFET). The
simulation tool multi-gate field effect transistor (MuGFET) has been used to
examine the FinFET characteristics. Transfer characteristics with various
temperatures and channel fin width (WF=5, 10, 20, 40, and 80 nm) are at
first simulated in this study. The results show that the increasing of
environmental temperature tends to increase threshold voltage, while the
subthreshold swing (SS) and drain-induced barrier lowering (DIBL) rise
with rising working temperature. Also, the threshold voltage decreases with
increasing channel fin width of transistor, while the SS and DIBL increase
with increasing channel fin width of transistor, at minimum channel fin
width, the SS is very near to the best and ideal then its value grows and
going far from the ideal value with increasing channel fin width. So,
according to these conditions, the minimum value as possible of fin width is
the preferable one for FinFET with better electrical characteristics.
Keywords:
Channel fin width
FinFET
MOSFET
Subthreshold swing
Temperature
This is an open access article under the CC BY-SA license.
Corresponding Author:
Yasir Hashim
Department of Computer Engineering, Tishk International University (TIU)
Kurdistan-Erbil, Iraq
Email: yasir.hashim@tiu.edu.iq; yasir.hashim@ieee.org
1. INTRODUCTION
The scaling down of conventional metal oxide semiconductor field effect transistor (MOSFET) has
become harder because it has serious effects of short channel on the characteristics of transistor when it is
minimized lower than 32 nm [1], the minimization width and length of channel of MOSFET guide to a bad
characteristics and increasing average consumed power. The main reason of these bad performances is
related to the implementing the MOSFET inside the Si wafer, so, the main idea to improve the performances
of transistor is free the MOSFET and isolate its structure on the surface of Si wafer. Much silicon on
insulator silicon on insulator (SOI) structure have been invented to isolate transistor from silicon bulk like
silicon nanowire transistor, carbon nanotube transistor, fin field-effect transistor (FinFET) structure. One of
those new innovated structures is the FinFET as shown in Figure 1 [2]. The FinFET structure has free from
many serious defies related with the continual scaling down structure of planer MOSFET [3]-[5].
The first FinFET like structure has been fabricated by Hashimoto et al. [6], the research of
Hashimoto et al. reports a new double-gate SOI structure MOSFET structure [6]. In the last decade, many
researchers direct their attention to the FinFET because of good performances in Nano-dimensional range
and to overcome the short channel effect problems of conventional planar MOSFET [7]-[11]. The excellent
short-channel behavior of FinFET results increase attention from semiconductor industries as well as the
researchers [12].
2. ISSN: 2088-8708
Int J Elec & Comp Eng, Vol. 12, No. 1, February 2022: 201-207
202
The sensor for subsumed electronic applications is the sensor of temperature based on
semiconductor devices [13]. Temperature sensors based on MOSFET could be designed on the fundamental
of the effect of working temperature on the I-V characteristics of the MOSFET [14]-[15]. While the bipolar
junction transistor possible to use as a sensor of temperature by use it as a diode by connecting its base and
collector together. In a similar way, a MOSFET could be used in diode mode by connecting the drain or
source with gate to use it as a temperature sensor Figure 2.
Figure 1. FinFET structure [2] Figure 2. Diode mode of MOSFET to use it as a
sensor of temperature (Vg=Vd=VDD)
The Nano-dimensional electronic devices such as diodes, transistors, capacitors, and resistors, have
newly become marketable in the industry of electronics because of their so tiny applicable circuits. The
characteristics of these Nano devices, which may correspond to enormous novel applications [16]-[20], will
likely build on the Nano-dimensional feature of such devices. The new versions of chips with these
comparatively novel and Nano-dimensional transistors may be further considered when new future research
findings are achieved. Also, the new designs and structures of MOSFET with Nano-dimensions are included
in novel technologies and consequently require more investigation and improvements to overcome the
limitations of normal MOSFET structure when its dimensions going down to Nano range.
Simulation of nano-devices in nano-electronic has extra importance in understanding those new
nano-devices' merits. So, simulation tools are used in this research for realization and valuation of the
FinFET sensitivity with temperature. The simulation tools have an ability to support the research fields for
more characterization the Nano-dimensional devices [21]. As well, simulation tools can define the nano-
device failure, in addition, retrenchment the costs of fabrication of these nano-devices in the Nano
dimensions field [22], [23].
2. RESEARCH METHOD
In this study, multi-gate field effect transistor (MuGFET) is used as the simulation tool to explore
the fin field-effect transistor (FinFET) characteristics. The Id-Vg characteristics of FinFET under different
environmental situations and with different parameters are examined. The impact of fin width of the gate on
the characteristics of temperature has been studied depending on the output characteristics of the FinFET.
The simulation tool MuGFET [24] has been used in this research.
MuGFET simulator depends mainly on PADRE or PROPHET for simulation, PADRE or
PROPHET was invented at Bell Laboratories. The partial differential equation profiler for one, two, or three
dimension were used in the PROPHET, and PADRE simulation depends on a device-oriented for 3D or 2D
transistors structure with arbitrary geometry [24]. This simulation tool has an ability to provide adequate
characteristic curves of FinFET for researcher to aid him completely explain and understand the FinFET
physics. Furthermore, the simulation tool gives self-consistent solutions to drift-diffusion and Poisson
equations [25], also this simulation tool, when calculating FinFET characteristics, can be used to simulate the
movement of transport objects. In this research, the output characteristics (Id–Vg) of FinFET at temperature range
from 250 K° to 400 K° with steps 25 K° are explored as shown in Figures 3-8 with parameters in Table 1.
3. Int J Elec & Comp Eng ISSN: 2088-8708
The impact of channel fin width on electrical characteristics of Si-FinFET (Yousif Atalla)
203
Table 1. The simulated FinFET dimensions and parameters of used in this study
Parameter Values
Length of channel (Lg) 85 nm
Length of source (Ls) 50 nm
Length of drain (Ld) 50 nm
concentration of channel (P-type) 1016
cm−3
concentration of source (N-type) 1019
cm−3
concentration of drain (N-type) 1019
cm−3
Thickness of oxide (Tox) 2.5 nm
Fin width of gate (WF) 5, 10, 20, 40, and 80 nm
3. RESULTS AND DISCUSSION
Figure 3 shows the effect of working temperature on the FinFET important parameters including
drain-induced barrier lowering (DIBL), subthreshold swing (SS), and threshold voltage (VT) at fin width
WF=5 nm, all measurements done with working temperature range from 250 to 400 K°. It is clear that the
increasing working temperature tends to decrease VT linearly, at 250 K° the VT=0.65 V which the higher
value and at 400 K° the VT=0.62 V which is the lower. The slope of curve which represents the threshold
voltage sensitivity with working temperature of transistor is -0.16 mV/K°. While, the best SS (at
49.7 mV/dec) and the near value to ideal SS (49.6 mV/dec) happen at lower temperature at 250 K° and then
increases linearly with increasing temperature until reaching (80.09 mV/dec) at 400 K°, which is also near to
the ideal SS at 79.4 mV/dec at 400 K°, so for all the range of T the SS is very close to the ideal values. The
SS sensitivity to the working temperature is 0.196 mV/dec.K°. DIBL increases linearly with increasing
working temperature, the minimum value is 26.9 mV/V and the maximum is 79.4 mV/V.
Figure 4 presents the impact of working temperature at WF=10 nm on the DIBL, SS, and VT of
FinFET, the working temperature T range from 250 K° to 400 K°. This figure illustrates that the increasing
working temperature results decreasing VT linearly, the VT decreases linearly from 0.59 V at 250 K° to
0.55 V at 400 K°. The slope of curve which represents the threshold voltage sensitivity with working
temperature of transistor is -0.31 mV/K°. While, at 250 K working temperature the SS value is 49.6 mV/dec
which represent the nearest value to the ideal SS at 49.6 mV/dec at 250 K°, and then with increasing working
temperature up to 400 K the SS increased up to 80.99 mV/dec, this SS represents the farthest value from the
ideal SS at 79.4 mV/dec at 400 K°. Also, the SS here is very close to the ideal values with all range of T. The
SS sensitivity to the working temperature is 0.21 mV/dec.K°. The DIBL increases as working temperature
increased but at lower values than WF=5 nm.
Figure 3. Temperature characteristics of VT, SS and
DIBL of the FinFET at WF=5 nm
Figure 4. Temperature characteristics of VT, SS and
DIBL of the FinFET at WF=10 nm
Figure 5 presents the impact of working temperature on the FinFET important parameters including
VT, DIBL and SS at fin width WF=20 nm, all measurements done with working temperature range from 250
up to 400 K°. It is clear that VT decreasing linearly with increasing working temperature, at 250 K° the
VT=0.54 V which the higher value and at 400 K° the VT=0.49 V which is the lower. The slope of curve
which represents the threshold voltage sensitivity with working temperature of transistor is -0.44 mV/K°.
While, the best SS (at 51.7 mV/dec) and the near value to ideal SS (49.6 mV/dec) happen at lower
0.62
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temperature at 250 K° and then increases linearly with increasing temperature until reaching (84.93 mV/dec)
at 400 K°, which is far from ideal SS at 79.4 mV/dec at 400 K°, so at lower T the SS is very close to the ideal
values. The SS sensitivity to the working temperature is 0.22 mV/dec.K°. DIBL increases linearly with
increasing working temperature until 350 K° then decreases with increasing working temperature.
Figure 5. Temperature characteristics of VT, SS and DIBL of the FinFET at WF=20 nm
Figure 6 presents the impact of working temperature at WF=40 nm on the DIBL, SS, and VT of
FinFET, the working temperature T range from 250 K° to 400 K°. This figure illustrates that the increasing
of working temperature results decreasing VT linearly, the VT decreases linearly from 0.49 at 250 K° to
0.45 V at 400 K°. The slope of curve which represents the threshold voltage sensitivity with working
temperature of transistor is -0.47 mV/K°. While, at T=250 K° the SS is at 61.99 mV/dec, this value is the
nearest to the ideal SS at 49.6 mV/dec and then working temperature increases the SS increased up to
106.49 mV/dec at 400 K°, this SS value is the farthest value from the ideal SS at 79.4 mV/dec at 400 K°.
Also, all values of SS here is very far from the ideal values with all range of T. The SS sensitivity to the
working temperature is 0.27 mV/dec.K. The DIBL increases as working temperature increasing, DIBL
increases from 26.54 up to 52.07 mV/V with the same range of T.
Figure 6. Temperature characteristics of VT, SS and DIBL of the FinFET at WF=40 nm
Figure 7 shows the effect of increasing working temperature from 250 K° to 400 K° on VT, SS and
DIBL at WF=80 nm. It is clear that with increasing working temperature the values of VT decreases. The
slope of curve which represents the threshold voltage sensitivity with working temperature of transistor is
-0.6 mV/K°. While SS and DIBL increased with increasing working temperature. This figure illustrates that
for the range of temperature the values of change of the VT from 0.38 to 0.29 V, SS from 130.66 to
0.49
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5. Int J Elec & Comp Eng ISSN: 2088-8708
The impact of channel fin width on electrical characteristics of Si-FinFET (Yousif Atalla)
205
253.20 mV/dec and DIBL from 230.37 to 295.89 mV/V, respectively. SS values increases with increasing
temperature while the nearest value to the ideal happens at lower temperature. The SS sensitivity to the
working temperature is 0.8 mV/dec.K.
Figure 8 shows the effect of fin width of FinFET on the VT, SS, and DIBL, the FinFET channel
width from 5-80 nm at 20 nm steps at working temperature T=300 K°. When the width of the channel
increased, it is notice that there is a decrease in VT and it is also notice an increase in DIBL with the WF
greater than 40 nm, the SS increases with increasing WF, when the WF increases from 5 nm, to 20 nm, the SS
approaches the very ideal value and when the WF increases more than 20 nm, the SS increased away the ideal
value as shown in Figure 8. So, this research shows the best range for WF is 5 to 20 nm. Figure 9 illustrates
the temperature sensitivity of VT (ΔVT/ΔT) and SS (SS/ΔT) with FinFET channel fin width (WF). According
to this figure, the lower sensitivity for both threshold voltage and subthreshold swing with better stability
with working temperature happen at lower WF.
Figure 7. Temperature characteristics of VT, SS and
DIBL of the FinFET at WF=80 nm
Figure 8. The VT, SS, and DIBL with the increase of
the FinFET channel fin width (WF)
Figure 9. The temperature sensitivity of VT and SS, with FinFET channel fin width (WF)
4. CONCLUSION
The impact of environmental temperatures with range of 250 to 400 K° on the FinFET electrical
parameters has been studied different channel fin widths (WF=5, 10, 20, 40, and 80 nm). The results show
that the VT lowering with rising working temperature, while the increasing of working temperature tends to
increase SS and DIBL. Also, the threshold voltage decreases with increasing channel fin width of transistor,
while SS and DIBL increase with increasing channel fin width of transistor. The (SS is very near to the ideal
value at 5 nm channel fin width then diverges and increases with increasing channel fin width. So, based on
the SS and VT temperature sensitivity, the FinFET with lower channel fin width is the best for stability with
the temperatures range of 250 to 400 K°.
0
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6. ISSN: 2088-8708
Int J Elec & Comp Eng, Vol. 12, No. 1, February 2022: 201-207
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ACKNOWLEDGEMENTS
The authors would like to thank Tishk International University (TIU), the Ministry of Higher
Education (in Malaysia) for providing financial support under Fundamental research grant No.
FRGS/1/2019/TK04/UMP/02/15 (University reference RDU1901199) and Universiti Malaysia Pahang
(UMP) for laboratory facilities as well as additional financial support under Internal Research grant
RDU1901199.
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7. Int J Elec & Comp Eng ISSN: 2088-8708
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BIOGRAPHIES OF AUTHORS
Yousif Atalla the author was born in Iraq, he received the B.Sc. of Engineering in
Electronics and Communications Engineering from Engineering Technical College, Iraq. He
completed the M.Sc. in Electronics Engineering- Micro and Nano-electronics from Universiti
Malaysia Pahang (UMP), Pahang, Malaysia. He is currently working as a Director of the
Engineering Affairs Department-Salah Al-Din Governorate Council, Iraq. His research
interests include Microelectronics and Nanoelectronic: FinFET transistor. He can be contacted
at email: yousif.atalla81@yahoo.com.
Yasir Hashim the author was born at Iraq, 1969, he received the B.Sc. and Master
of Engineering in Electronics and Communications Engineering from the University of Mosul,
Mosul, Iraq, in 1991 and 1995, respectively. He completed the Ph.D. in Electronics
Engineering- Micro and Nano-electronics from Universiti Science Malaysia (USM), Penang,
Malaysia, in 2013. He is currently a Senior Lecturer in the Faculty of Engineering, Tishk
International University, Erbil-Kurdistan, Iraq. His research interests include Microelectronics
and nanoelectronics: Nanowire transistors, FinFET transistor, Multistage Logic Nano-
inverters. The author has teaching experience in undergraduate fields of Electrical and
Electronics Engineering for 17 years and supervised postgraduate student in Master and Ph.D.
levels. He can be contacted at email: yasir.hashim@tiu.edu.iq; yasir.hashim@ieee.org.
Abdul Nasir Abd Ghafar the author received the B.Sc. in Electrical and
Electronics System Engineering, Master in Electronics System and PhD in Systems
Engineering from Okayama University of Science, Japan in 2011, 2013 and 2016, respectively.
He is currently a Senior Lecturer and Head of Program, Electrical Engineering Technology
(Power and Machine), Faculty of Electrical and Electronics Engineering Technology,
Universiti Malaysia Pahang (UMP), Malaysia. His research interest includes applied
electronics, embedded system, optimization and simulation, robotics, and rehabilitation
devices. The author has teaching experience in undergraduate fields of Electrical and
Electronics Engineering for 5 years and supervised postgraduate students in both Master and
PhD levels. He can be contacted at email: abdnasir@ump.edu.my.