The document describes several tactile and pressure sensors developed by SMC "Technological Centre". This includes: 1) Tactile sensors based on pressure transducer arrays with 19 channels and differential analog output for medical purposes. 2) Integral pressure transducers with silicon membranes for measuring pressures from 1-25 kPa or 40-2500 kPa with analog multiplexer pre-treatment. 3) Tensometric modules for measuring differential, absolute, or excessive pressures of non-aggressive gases using integrated pressure transducers.

2. Tactile Sensors
Based on Pressure Transducers Arrays

3. Integral Pressure Transducers Array
6,2
□ 14
18
The array is aimed to design tactile sensors of medical purpose.
Measurement Range 35 kPa
Channels Number 19
Pretreatment Circuit Analog Multiplexer
Overall Dimensions Ø18х0,42 mm
Supply Voltage max+5 V
Membrane Design Method Silicon Chemical Etching
Output Signal Differential Analog Signal
Technical Features

4. 2-D Array Test Models of Pressure Transducers with Pretreatment Elements
Module Overall Dimensions up to Ø18х17 mm
Output Signal UART Digital Interface
Pressure Transducers Distance
(Equal Triangle Side)
2,7 mm
Pressure Measurement Channels Number 19
Data Treatment Device Amplifier, Multiplexor, AD-Converter, Microcontroller
AD-Converter Capacity 16 bit
Measurement Frequency 1000-1500 /с

5. Supply Voltage 2,7-3,6 V
Output Signal UART, 115200 c-1
Channels Number 7
Overall Dimensions Ø8,9x40 mm
Treatment Device Multiplexor, AD-Converter, Microcontroller
AD-Converter Capacity 16 bit
Measurement Frequency 100 Hz
Technical Features
2-D Array Test Model of Sensors with Signal Pretreatment Elements

6. Gate Arrays 5528 series with reduced supply voltage
SMC “TECHNOLOGICAL CENTRE” developed a family of 4 radiation-resistant Gate Arrays (GA) series, allowing to
realize semicustom microcircuits with volume of 580 – 1.000.000 nominal gates with supply power of 2,7 – 5,5 W.
Mentioned GA Series have a single “Kovcheg” ASIC, a single library of functional cells under support of microcircuits
prototyping.
5503 & 5507 GA Series are full functional analogues, produced with a single CMOS-technology, consisting of 4 GA types
each. 5503 GA Series: supply power – 5W, average delay time per gate – max 2,2 ns. 5507 BMC Series: supply power –
3W, average delay time per gate – max 3,5 ns.
5508 & 5509 GA Series have “sea of gates” organisation, 2 metallization layers, high frequencies. 5509 GA Series are
carried out on “silicon-on-insulator” structure and have higher resistance to single nuclear particles. Mentioned series are
under production.
Three types of Gate Arrays with 20.000, 100.000 and 1.000.000 gates;
The CMOS 0.18 microns technology with enclosed transistors on bulk silicon;
Supply voltage of chips is in the range from 0,8 V to 3,0 V;
Original tools of topological design and prototyping;
Reliability at least 50 000 hours.

7. Integrated System of Automated Design LIS “KOVCHEG"
The teaching version of CAD LSI “Kovcheg 2.1" is intended for CMOS VLSI
development based on younger types of basic matrix crystals (К5503ХМ1,
К5503ХМ2) of BMC К5503 series.
The teaching version of CAD VLSI “Kovcheg 2.1" includes all main subsystems
required for development and preparation for production of semicustom VLSI. They
are:
• System of functional-logic simulation ASCT;
• Subsystem of cells arrangement on BMC field;
• Subsystem of topology synthesis;
• Specialized topological editor;
• Verification subsystem;
• Subsystem of topology parameters calculation.

8. SMC «Technological Centre» Production
and New Developments

9. Application: conversion of gage, absolute and differential pressures into electrical signal.
Description: Transducer is a crystal sized 6,2 х 6,2 mm and 430 mcm thickness with 3,5 x 3,5
mm membrane and membrane distributed concentrator. All tensoresistors have identical
geometry and are parallel to each other. The resistors are united in Witstone bridge circuit with
aluminium paths with a torn diagonal (to adjust initial bridge disbalance). Tensobridge is
switched successively with transistor circuit for sensitivity temperature compensation.
Purpose: to measure pressures: from 1 kPa to 25 kPa.
Integral Pressure Transducer IPD 5.2
1 5
610
6,2+0,1
Electrical Circuit &
Outputs Purpose SPE 5.2
2
1
9
8
3
10
6
45
SPE5.2
Jumper
Jumper
Supply Voltage, V 4,85 - 5,15
Output Voltage at Pn = 0, mV ±6
Temperatures, °С –50 ... +85
Voltage at Tensobridge Input at Vnom = 5,0 V 2,4 - 2,8
Tensobridge Resistance Qm, kOm 3,0 - 5,0
Tensobridge Leak Current at V=30 V, mcA < 0,2
Contact Areas

10. Integral Pressure Transducer IPD 6
Application: conversion of gage, absolute and differential pressures into electrical
signal.
Description: Transducer is a crystal sized 4 х 4 mm and 0,43 mm thickness with 2 x 2
mm membrane and membrane distributed concentrator. All tensoresistors have
identical geometry and are parallel to each other. The resistors are united in Witstone
bridge circuit with aluminium paths with a torn diagonal (to adjust initial bridge
disbalance). Tensobridge is switched successively with transistor circuit for sensitivity
temperature compensation.
Purpose: to measure pressures: from 40 kPa to 2500 kPa.Electrical Circuit &
Outputs Purpose SPE 6
2
1
9
8
3
10
6
45
SPE 6
Jumper
Jumper
Supply Voltage, V 4,85 - 5,15
Output Voltage at Pn = 0, mV ±6
Temperatures, °С –50 ... +85
Voltage at Tensobridge Input at Vnom = 5,0 V 2,4 - 2,8
Tensobridge Resistance Qm, kOm 3,0 - 5,0
Tensobridge Leak Current at V=30 V, mcA < 0,2
1 5
610
4,0+0,2

11. Endosurgery Tactile
Mechanoreceptors
Tactile Mechanoreceptors for MSU IISI Endosurgery

12. Tensometric Beam Transducer TKB-5
Application: conversion of moving and acceleration into electrical signal in force sensors
and accelerometers.
Description: The transducer is a rectangular silicon beam with mechanical stress
concentrator in the form of transverse depressions of defined dimensions with strain
impedance bridge on the surface.
Advantages: Temperature sensitivity compensation scheme.
Electrical circuit
Ubridge
Uout
Udd
Q1
R2
R1
1 4
5
3
2
76
Nominal load , N 0,2
Maximum load, N 0,6
Supply voltage, V 9
Nominal output signal, mV 140  200
Initial bridge unbalance, mV <20
Output signal non-linearity, % <0,2
Operating temperatures, ºС -40  +80
Temperature effect on sensivity,%/10ºС <0,2
Temperature “zero” inaccuracy, %/10 ºС <0,5
Dimensions, mm 8  2  0,5

13. Application: conversion of moving and acceleration into electrical signal in force sensors and
accelerometers.
Description: The transducer is a rectangular silicon beam with two mechanical stress
concentrators in the form of transverse depressions of defined dimensions with tensoresistive
bridge circuit on the surface.
Advantages: Temperature sensitivity compensation scheme.
Nominal load , N 0,15
Maximum load, N 0,45
Supply voltage, V 5
Nominal output signal, mV 20  60
Initial bridge unbalance, mV <20
Output signal non-linearity, % <0,2
Operating temperatures, ºС -50  +80
Temperature effect on sensivity,%/10ºС <0,2
Temperature “zero” inaccuracy, %/ 10ºС <0,5
Dimensions, mm 10  2  0,5
Tensometric Beam Transducer TKB- 6

14. Tensometric Modules of Differential Pressure TDM-D
Tensometric module TDM-D is designed to measure differential pressure
of non-aggressive gases. In tensometric module the sensitive element of
pressure (SPE), representing assembly from a crystal of the Integrated
pressure transducer IPD and silicon details of constructive purpose is
applied. The type of a crystal depends on rating value of pressure. SPE it is
hermetically attached to the metal basis in which are soldered in glass-to-
metal conclusions. To volume with measured pressure tensometric module
connects through the branch socket in a cover of the case in diameter of
4,8 mm. The abutment pressure is supplied from the side of the thin tube of
2-mm-diameter.

15. Tensometric Modules of Differential Pressure TDM-A
Tensometric module TDM-A is designed to measure absolute pressure of
non-aggressive gases. In tensometric module the sensitive element of pressure
(SPE), representing assembly
from a crystal of the Integrated pressure transducer IPD and silicon details of
constructive purpose is applied. The type of a crystal depends on rating value
of pressure. During assembly SPE between IPD crystal and a silicon layer the
vacuum cavity is formed. SPE it is pasted to the metal basis in which are
soldered in glass-to-metal conclusions. To volume with measured pressure
tensometric module connects through the branch socket in a cover of the case
in diameter of 4,8 mm.

16. Tensometric module TDM-IV1, TDM-IV2 are designed to measure the excessive pressure and
rarefaction of non-aggressive gases. Constructively tensometric module excessive pressure are issued in
two variants: TDM-IV1 with the branch socket in a cover of tensometric module for connection to the
measured environment; TDM-IV2 with the branch socket in the basis of the case. In tensometric modules
the sensitive element of pressure (SPE), representing assembly from a crystal of the Integrated pressure
transducer IPD and silicon details of constructive purpose is applied. The type of a crystal depends on
rating value of pressure. SPE is hermetically attached to the metal basis in which are soldered in glass-to-
metal conclusions.
Tensometric Modules of Excessive Pressure and Rarefaction
TDM-IV1 TDM-IV2

17. ASIC 5507 – Development of ASIC 5503
Gate Arrays Design
 Channel structure
 4-transistor cell
 2 layout layers
vertical – Al
horyzontal – polySi
 metal pitch 4,8 mcm
 channel length 1,8 mcm
 1 sewn layer
 technology provides high resistance to special factors

18. Radiaion-resistant ASIC 5508 and 5509
Two-metal ASIC 5508 has structure “sea of rectifying cells" and operating frequency up to 100 Hz.
ASIC 5509 on structures «silicon-on-insulator» has higher resistance to single nuclear particles effect.
Forecasted LSI resistance features to special factors
External factor
ASIC Series
5503 5508 5509
И1 2У 2У 3У
И2 5*2У 2У 3У
УБР И2 features 0,02*1У 0,02*1У 0,5*1У
И3 2У 2У 2У
С1 2У 2У 2У
С2 2У 2У 2У
С3 1У 2У 2У
К1 2*1У 2У 2У
К3 0,5*1У 2У 2У

19. Production Made to Special Orders

20. Pressure Sensor
Pressure Sensor Purpose:
Sensor is applied to measure pressure in lines of dry unaggressive gases
and to pass dimensions in a digital form. Sensor measures relative
pressure, i.e. depression or discharge in relation to external atmosphere.
Sensor has primary treatment means (A-to-D converter, micro-
controller) to digitize analog signals and its temperature correction.
Pressures, kPa -10...0...+100
Resolution (low order value), kPa 0,1
Main Inaccuracy, kPa ±0,5
Temperatures, °С 0...+40
Supply Voltage, V 3,3
Current, mA 20
Interface RS-485
Dimensions, mm 50 х 15 х 25

21. Wireless Pressure Sensor
Pressures, kPa 0...+250
Resolution (low order value), kPa 0,25
Main Inaccuracy, kPa ±2
Temperatures, °С 0...+40
Supply Voltage, V Lithium Battery 3,3
Battery Service Life, hour 1
Measurement Rate, measurement/sec 100
Interface Radiochannel 433 Mhz
Dimensions, mm 50 х 12,5 х 10
Wireless Pressure Sensor Purpose:
Sensor is applied to measure pressure of dry
unaggressive gases and to pass dimensions in a digital form distantly.
Sensor measures relative pressure, i.e. depression or discharge in
relation vacuum. Sensor has primary treatment means (A-to-D
converter, microcontroller) to digitize analog signals.

22. Integral Magnetosensitive Microsystems of Matrix Type to Measure
Parameters of Distributed Magnetic Field
Technical Features:
- dimensional resolution 40...200 mcm
- relative magnetosensitivity 4 – 10 %/Т
- operating temperatures -60...+125 С
- magnetosensitive cells 32...1000
- typical crystal sizes, mm 8х10; 2х28; 4х30
- outputs 16...64
- consumption current 300...900 мА
Directon of magnetosensitivity axis – parallel or perpendicular
to the crystal surface

23. Magnetoresistive Sensors
Three-coordinated
magnetoresistive sensors
Application:
- detectors of availability, orientation,
movement of ferromagnetic objects;
- magnetovisors;
- defectoscopes of ferromagnetic
object.

24. Magnetoresistive transducer of magnetic field (AMRD OC
series) with odd output signal characteristics
Application:
- Compact electronic devices for means of safety and navigation;
- Portable remote presence control systems of any object and its
traffic;
- Onboard devices of transport vehicles and flying devices;
- Matrix transducers of magnetovisors and defectoscopes.
Distinguishing Features:
- patent RU2279737;
- availability integral bias coil (Set-Reset) providing decreasing of
hysteresis transmission
characteristics;
- availability planar coil (Offset) intended for eliminating initial
unbalance.

25. Magnetoresistive transducer of magnetic field (AMRD EC series)
with even output signal characteristics
Application:
- Transducers of position and contactless switches;
- Registration of moving of ferromagnetic object;
- Contactless sensors of promptness for electric engines and
automobile electronic ignition system;
- Portable remote presence control systems of ferromagnetic
objects.
Distinguishing Features:
- AMRD-EC structure contains integral bias coil (Offset)
intended for eliminating initial unbalance;
- Expanded range of magnetic field measurement.
External view and
purpose of outputs
Front Reverse
4 - power supply (+)
1 - output 1
5 - output 2
2 - general earth( )
3, 6 - power supply
of conductor Offset
7, 8 - are not used

26. Electronic Sensor for Magnetic Field Intensity Transformation with Odd Characteristic
of Output Signal BKDNPM-1O
(part types BKDNPM-1O-02 and BKDNPM-1O-06)
BKDNPM-1O Application:
- scanners of the distributed magnetic field,
- defectoscopes of ferromagnetic objects,
- controlling and measurement systems,
- electronic compass,
- integrated microsystems to analyze constant and variable of magnetic fields with
magnetic field intensity: - 2 E…+ 2 E (BKDNPM-1O-02) and – 6 E… + 6 E (BKDNPM-
1O-06).
Parameter BKDNPM-1O-02 BKDNPM-1O-06
Sensitivity, mV/E min 1000 min 1000
Magnetic Field Intensity, E ±2 ±6
Variable Magnetic Field Frequency, kHz no more 500 no more 500
Top Resolution by Magnetic Field, mcE 50 50
Magnetic Field Intensity Measurement Inaccuracy, % 1,5 1,5
Nominal Supply Voltage, V 6 ± 0,5 6 ± 0,5
Operating Temperatures,°С +10 ... + 55 +10 ... + 55
Dimensions, mm 92,5 х 20,0 х 7,5 92,5 х 20,0 х 7,5

27. Parameter BKDNPM-1E-10
Sensitivity, mV/E min 100
Magnetic Field Intensity, E 10
Variable Magnetic Field Frequency, kHz no more 500
Nominal Supply Voltage, V 6 ± 0,5
Operating Temperatures,°С +10 ... + 55
Dimensions, mm 92,5 х 20,0 х 7,5
BKDNPM-1E-10 Application:
- program control system for turn frequency of machine tools and
mechanisms’ moving parts,
- hitless switches and position detector of ferromagnetic objects,
- integrated microsystems to fix stated levels of magnetic field or
current.
Electronic Sensor for Magnetic Field Intensity Transformation
with Even Characteristic of Output Signal BKDNPM-1E-10

28. Universal Module for MEMS Signals Processing
Output Analog Channels 8
Output Digital Channels 8
Power, W 0,5
Data Discretization Frequency, kHz up to 200
Supply Voltage, V +6
Dimensions, mm 79 х 53 х 15
Purpose:
Signals reception from MEMS sensors, followed by digital
filtration and data processing.
Calculation of measured dimensions’values, and their processing
according to given algorithms.
Initial data integration in order to increase parameters accuracy.
Module is applied in various automatics and monitoring systems
(machine building, medicine, transport etc.).
Module includes three-coordinate gyroscope, three-coordinate
accelerometer, three-coordinate magnetic field sensor.
Extra Options:
- data archiving up to 16 MB,
- data transfer according to standard interface
(Rs232, R3485, IRDA, USB etc.)

29. Piezoresistive Inertial Microsystem for Small Accelerations
Measurement
The microsystem is used to measure accelerations in the range of 2-10 g with frequency of zero – several
hundreds tens Herz. Silicon inertial mass weighed 2 mg is attached by microconsoles to the base in the form of
rectangular frame, with four thin silicon beams.
Microsystem crystal size - 8,0 х 2,5 х 0,44 mm
Silicon inertial mass weight - 2 mg
Typical beam size - 600х20х10 mcm
Accelerations measurement range - 2-10 g
Microsystem sensitivity with power of 9V - 1,9 mV/g
Operating frequencies range - от 0 до 400 Hz
Resonant frequency - 1200 Hz