Device Modeling Report




COMPONENTS : VOLTAGE COMPARATOR (CMOS)
PART NUMBER : TC75S56FE
MANUFACTURER : TOSHIBA




                Bee Technologies Inc.


  All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
MODEL PARAMETER


Pspice model
                                       Model description
 parameter
  LEVEL
      L        Channel Length
     W         Channel Width
     KP        Transconductance
     RS        Source Ohmic Resistance
     RD        Ohmic Drain Resistance
    VTO        Zero-bias Threshold Voltage
    RDS        Drain-Source Shunt Resistance
    TOX        Gate Oxide Thickness
   CGSO        Zero-bias Gate-Source Capacitance
   CGDO        Zero-bias Gate-Drain Capacitance
    CBD        Zero-bias Bulk-Drain Junction Capacitance
     MJ        Bulk Junction Grading Coefficient
     PB        Bulk Junction Potential
     FC        Bulk Junction Forward-bias Capacitance Coefficient
     RG        Gate Ohmic Resistance
     IS        Bulk Junction Saturation Current
      N        Bulk Junction Emission Coefficient
     RB        Bulk Series Resistance
    PHI        Surface Inversion Potential
  GAMMA        Body-effect Parameter
   DELTA       Width effect on Threshold Voltage
    ETA        Static Feedback on Threshold Voltage
  THETA        Modility Modulation
  KAPPA        Saturation Field Factor
   VMAX        Maximum Drift Velocity of Carriers
     XJ        Metallurgical Junction Depth
     UO        Surface Mobility




           All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Output Low Voltage

Simulation result




                                                                           Simulation




Evaluation Circuit


                                     VDD               VOUT
                                                                                  Vol
                                             U1



                                             -     +
                                                              tc75s56f

                                     VIN-        VSS   VIN+
                     V2                                                            I1
            5
                                                                                  5m
                                            V1
                               1




                                                   0


Comparison Table


       Isink=5mA           Measurement                        Simulation           %Error

         Vol (V)                   0.1                         0.097569            -2.431
                All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Output high Voltage

Simulation result




                                                                            Simulation




Evaluation Circuit


                                      VDD                 VOUT
                                                                                         Voh
                                             U2



                                             -        +
                                                                 tc75s56f
                     V5                                                                  I2
            5                         VIN-       VSS      VIN+
                                                                                         5m
                                                                 V6
                                                  1




                                                             0



Comparison Table


     Isource = 5mA        Measurement                      Simulation                %Error

        VOH (V)                 4.9                              4.8899              -0.206
                All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Output Sink Current

Simulation result




                                                                         Simulation




Evaluation Circuit

                                      VDD                  VOUT
                                                 U3

                                                                  tc75s56f
                                                 -     +
                                                                              Vsink

                                      VIN-           VSS   VIN+               0.5
            5        V3
                                             V4


                                             1




                                                       0


Comparison Table


      VOL = 0.5 V         Measurement                      Simulation               %Error

       Isink (mA)                25                           24.371                -2.516
                All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Output Source Current

Simulation result




                                                                          Simulation




Evaluation Circuit


                               VDD                  VOUT
                                      U4

                                                            tc75s56f
                                                                                   Vsource
                                      -        +

                V7
                               VIN-       VSS       VIN+                     4.5
                                                           V8
                5                          1




                                                0



Comparison Table


      VOH = 4.5 V        Measurement                            Simulation           %Error

      Isource (mA)              21                               21.625                2.976
               All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Propagation Delay Time and Response Time

Simulation result




                                                                                       Simulation




Evaluation Circuit

                                         VDD                       VOUT
                                                                                       OUTPUT
                                                    U1



                                                    -     +
                                                                          tc75s56f
                      V1                 VIN-           VSS        VIN+
            5
                                                                                        V4
                                  V2                          V3                        V1 = -100m
                              0                                                         V2 = 100m
                                                0                                       TD = 1u
                                                                                        TR = 10n
                                                                                        TF = 10n
                                                                                        PW = 5u
                                                                                        PER = 10u




                                                          0


Comparison Table

        Over drive=100mV               Measurement                             Simulation            %Error
                tPLH (ns)                  680                                  663.805              -2.382
                tPHL (ns)                  250                                    247.4              -1.040
                 tr (ns)                    60                                   59.462              -0.897
                  tf (ns)                   8                                    7.9819              -0.226
                  All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Input Bias Current and Input Offset Current Characteristics

Simulation result




                                                                                            Ib
                                                                                            Ios




Evaluation Circuit

                                       VDD                       VOUT
                                                  U1



                                                  -     +
                                                                        tc75s56f
                     V4                VIN-           VSS        VIN+
            5                                                                                     R1
                                                                                                  1k
                                  V2                        V3                         V1
                          0
                                              0
                                                                                   0




                                                        0


Comparison Table

                               Measurement                                Simulation              %Error
            Ib (pA)                 1                                       0.9979                -0.210
            Ios(pA)                 1                                       0.9980                -0.200
                All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Input Offset Voltage Characteristics

Simulation result




                                                                     Simulation




Evaluation Circuit

                                         VDD              VOUT
                                                                                  output
                                                U1



                                                -     +
                                                                 tc75s56f

                                         VIN-       VSS   VIN+

                     V3
            5

                                                                            V1


                                                                            0




                                                      0



Comparison Table

                            Measurement                   Simulation                %Error

           Vio(mV)                 1                         1.0495                   4.95

                All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Voltage Gain Characteristics

Simulation result




                                                                           Simulation




Evaluation Circuit

                                                                                          OUTPUT
                                        VDD                   VOUT
                                               U1



                                               -     +
                                                                     tc75s56f
                     V1                 VIN-       VSS        VIN+
            5


                                                         V2                     VIN
                                          0                                     V3
                                                                                VOFF = 1.0495m
                                                                                  VAMPL = 0
                                                                                  FREQ = 0
                                                                                  AC = 1m




                                                                 0



Comparison Table

                            Measurement                              Simulation                  %Error
          Av (dB)                  94                                   93.148                   -0.906

                All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

SPICE MODEL of TC75S56FE in SPICE PARK

  • 1.
    Device Modeling Report COMPONENTS: VOLTAGE COMPARATOR (CMOS) PART NUMBER : TC75S56FE MANUFACTURER : TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 2.
    MODEL PARAMETER Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 3.
    Output Low Voltage Simulationresult Simulation Evaluation Circuit VDD VOUT Vol U1 - + tc75s56f VIN- VSS VIN+ V2 I1 5 5m V1 1 0 Comparison Table Isink=5mA Measurement Simulation %Error Vol (V) 0.1 0.097569 -2.431 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 4.
    Output high Voltage Simulationresult Simulation Evaluation Circuit VDD VOUT Voh U2 - + tc75s56f V5 I2 5 VIN- VSS VIN+ 5m V6 1 0 Comparison Table Isource = 5mA Measurement Simulation %Error VOH (V) 4.9 4.8899 -0.206 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 5.
    Output Sink Current Simulationresult Simulation Evaluation Circuit VDD VOUT U3 tc75s56f - + Vsink VIN- VSS VIN+ 0.5 5 V3 V4 1 0 Comparison Table VOL = 0.5 V Measurement Simulation %Error Isink (mA) 25 24.371 -2.516 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 6.
    Output Source Current Simulationresult Simulation Evaluation Circuit VDD VOUT U4 tc75s56f Vsource - + V7 VIN- VSS VIN+ 4.5 V8 5 1 0 Comparison Table VOH = 4.5 V Measurement Simulation %Error Isource (mA) 21 21.625 2.976 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 7.
    Propagation Delay Timeand Response Time Simulation result Simulation Evaluation Circuit VDD VOUT OUTPUT U1 - + tc75s56f V1 VIN- VSS VIN+ 5 V4 V2 V3 V1 = -100m 0 V2 = 100m 0 TD = 1u TR = 10n TF = 10n PW = 5u PER = 10u 0 Comparison Table Over drive=100mV Measurement Simulation %Error tPLH (ns) 680 663.805 -2.382 tPHL (ns) 250 247.4 -1.040 tr (ns) 60 59.462 -0.897 tf (ns) 8 7.9819 -0.226 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 8.
    Input Bias Currentand Input Offset Current Characteristics Simulation result Ib Ios Evaluation Circuit VDD VOUT U1 - + tc75s56f V4 VIN- VSS VIN+ 5 R1 1k V2 V3 V1 0 0 0 0 Comparison Table Measurement Simulation %Error Ib (pA) 1 0.9979 -0.210 Ios(pA) 1 0.9980 -0.200 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 9.
    Input Offset VoltageCharacteristics Simulation result Simulation Evaluation Circuit VDD VOUT output U1 - + tc75s56f VIN- VSS VIN+ V3 5 V1 0 0 Comparison Table Measurement Simulation %Error Vio(mV) 1 1.0495 4.95 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 10.
    Voltage Gain Characteristics Simulationresult Simulation Evaluation Circuit OUTPUT VDD VOUT U1 - + tc75s56f V1 VIN- VSS VIN+ 5 V2 VIN 0 V3 VOFF = 1.0495m VAMPL = 0 FREQ = 0 AC = 1m 0 Comparison Table Measurement Simulation %Error Av (dB) 94 93.148 -0.906 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005