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Device Modeling Report




COMPONENTS : VOLTAGE COMPARATOR
PART NUMBER : LM111H/883
MANUFACTURER : NATIONAL




               Bee Technologies Inc.


 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
BJT MODEL


Pspice model                            Model description
 parameter
     IS        Saturation Current
     BF        Ideal Maximum Forward Beta
    CJC        Zero-bias Collector-Base Junction Capacitance
     TF        Forward Transit Time
     TR        Reverse Transit Time


DIODE MODEL

Pspice model                    Model description
 parameter
     IS      Saturation Current
     RS      Series Resistance




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Output Low Voltage

Simulation result




                                                                              Simulation




Evaluation Circuit


                                       U1         V+
                                GND                         O/P


                                 IN+          +             BAL/STR
                                              -

                                 IN-                        BAL

                                                  V-
                                       LM111H
                        V4        V1                                     I1           V2
                1.55                                   V3
                                        -15                           50m
                                                                                      15
                         1.56




                                                        0


Compasion Table


         IO = 50mA              Measurement                  Simulation             %Error
           Vol (V)                     0.75                   0.752605               0.347
                All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Response time (Rise time and Transition time)

Simulation result




                                                                          OUTPUT




Evaluation Circuit


                                        U2        V+
                                 GND                        O/P
                                                                      Tr

                                 IN+          +             BAL/STR
                                              -
                                                                      RL1          V7
                                  IN-                       BAL
                                                                      500
                                                  V-                               15
                V1 = -5m    V5          LM111H                            V8
                V2 = 100m                              V6
                TD = 0
                TR = 0                                                5
                TF = 0                       -15
                PW = 5u
                PER = 10u



                                                       0


Compasion Table

                                        Measurement               Simulation            % Error
      Rising delay time (us)               0.125                   0.123911             -0.871
       Transition time (us)                0.125                   0.125460              0.368
               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Response time (Falling time)

Simulation result




                                                                              OUTPUT




Evaluation Circuit


                                    U1        V+
                             GND                           O/P
                                                                         Tf

                             IN+          +                BAL/STR
                                          -                              RL

                              IN-                          BAL          500

                                              V-                         V2             V3
                V1 = -100m   V1 LM111H
                V2 = 5m                                                                15
                TD = 0                             V4                   5
                TR = 0
                TF = 0
                PW = 5u                  -15
                PER = 10u



                                                   0


Compasion Table

                                         Measurement                 Simulation             % Error

      Falling delay time (us)                      0.175             0.175134                0.077

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Input Offset Voltage Characteristics

Simulation result




                                                                      Simulation




Evaluation Circuit


                                              U1        V+
                                       GND                          O/P
             output1

                        R1              IN+         +               BAL/STR
                                                    -
                         1k
                                        IN-                         BAL

                                                        V-                         V3
                                              LM111H
                                                                                   15
                                  V1                         V2

                                                   -15
                              0




                                                    0


Compasion Table


                              Measurement                     Simulation           %Error
        Vio(mV)                   0.7                             0.696510         -0.499
                All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Av Characteristics

Simulation result




                                                                                  Simulation




Evaluation Circuit


                                                  U1        V+
                                           GND                          O/P
            output

                       R1                  IN+          +               BAL/STR
                                 in
                                                        -
                        1k            V2
                                            IN-                         BAL

                                      0.696510m    V-                                          V3
                                              LM111H
                                                                                               15
                                      V1                         V4

                                                       -15
                             0




                                                        0


        Av = 24.880 / 124.633u
Compasion Table

         RL = 1k                Measurement                          Simulation               %Error
         Av (V/mV)                     200                             199.626                  -0.187
                All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Input Bias Current Characteristics

Simulation result




                                                                            Ib
                                                                            IIO




Evaluation Circuit


                                          U2       V+                     R1
                                GND                             O/P

                                                                           1k
                                 IN+           +                BAL/STR
                                               -

                                    IN-                         BAL
                                                                                   V3
                                                   V-
                      V1       V2         LM111H                                   15
                                                        V4
                                                          -15
                      0Vdc    0Vdc




                                                        0


Compasion Table

                              Measurement                             Simulation        % Error
           Ib (nA)                60                                    60.048           0.080
           IIO (nA)                4                                    3.9812          -0.470

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

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SPICE MODEL of LM111H/883 in SPICE PARK

  • 1. Device Modeling Report COMPONENTS : VOLTAGE COMPARATOR PART NUMBER : LM111H/883 MANUFACTURER : NATIONAL Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 2. BJT MODEL Pspice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta CJC Zero-bias Collector-Base Junction Capacitance TF Forward Transit Time TR Reverse Transit Time DIODE MODEL Pspice model Model description parameter IS Saturation Current RS Series Resistance All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 3. Output Low Voltage Simulation result Simulation Evaluation Circuit U1 V+ GND O/P IN+ + BAL/STR - IN- BAL V- LM111H V4 V1 I1 V2 1.55 V3 -15 50m 15 1.56 0 Compasion Table IO = 50mA Measurement Simulation %Error Vol (V) 0.75 0.752605 0.347 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 4. Response time (Rise time and Transition time) Simulation result OUTPUT Evaluation Circuit U2 V+ GND O/P Tr IN+ + BAL/STR - RL1 V7 IN- BAL 500 V- 15 V1 = -5m V5 LM111H V8 V2 = 100m V6 TD = 0 TR = 0 5 TF = 0 -15 PW = 5u PER = 10u 0 Compasion Table Measurement Simulation % Error Rising delay time (us) 0.125 0.123911 -0.871 Transition time (us) 0.125 0.125460 0.368 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 5. Response time (Falling time) Simulation result OUTPUT Evaluation Circuit U1 V+ GND O/P Tf IN+ + BAL/STR - RL IN- BAL 500 V- V2 V3 V1 = -100m V1 LM111H V2 = 5m 15 TD = 0 V4 5 TR = 0 TF = 0 PW = 5u -15 PER = 10u 0 Compasion Table Measurement Simulation % Error Falling delay time (us) 0.175 0.175134 0.077 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 6. Input Offset Voltage Characteristics Simulation result Simulation Evaluation Circuit U1 V+ GND O/P output1 R1 IN+ + BAL/STR - 1k IN- BAL V- V3 LM111H 15 V1 V2 -15 0 0 Compasion Table Measurement Simulation %Error Vio(mV) 0.7 0.696510 -0.499 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 7. Av Characteristics Simulation result Simulation Evaluation Circuit U1 V+ GND O/P output R1 IN+ + BAL/STR in - 1k V2 IN- BAL 0.696510m V- V3 LM111H 15 V1 V4 -15 0 0 Av = 24.880 / 124.633u Compasion Table RL = 1k Measurement Simulation %Error Av (V/mV) 200 199.626 -0.187 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 8. Input Bias Current Characteristics Simulation result Ib IIO Evaluation Circuit U2 V+ R1 GND O/P 1k IN+ + BAL/STR - IN- BAL V3 V- V1 V2 LM111H 15 V4 -15 0Vdc 0Vdc 0 Compasion Table Measurement Simulation % Error Ib (nA) 60 60.048 0.080 IIO (nA) 4 3.9812 -0.470 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004