The document contains a detailed device modeling report for the TC75S51FE operational amplifier from Toshiba, including SPICE and MOSFET models describing various parameters such as transconductance and channel dimensions. It presents simulation results for output voltage swing, input current, offset voltage, open-loop voltage gain, unity gain frequency, common-mode rejection ratio, and slew rate, alongside comparison tables for measurement against simulation and error analysis. All content is protected by copyright from Bee Technologies Inc. (2005).

1. Device Modeling Report
COMPONENTS: OPERATIONAL AMPLIFIER
PART NUMBER: TC75S51FE
MANUFACTURER: TOSHIBA
REMARK TYPE: (CMOS OPAMP)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. Spice Model
OU T
VD D
U4
5
4
TC75S51F
1
3
2
IN +
VSS
IN -
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Output Voltage Swing
Simulation result
VOH
VOL
Evaluation Circuit
U5 U6
IN+ VDD IN+ VDD
1 5 1 5
VSS VSS
2 2
IN- OUT IN- OUT
3 4 VOH 3 4 VOL
V3 V4
V5 R2
TC75S51F TC75S51F
V1 V2 R3 1.45
1.55 1.45 1.55 100k
100k 3
V6
3
0 0
Compasion Table
Measurement Simulation %Error
VOH(V) 2.9 2.9 0
VOL(V) 0.1 0.1 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Input Current
Simulation result
Simulation
Evaluation Circuit
U4
IN+ VDD
1 5
VSS
2
IN- OUT
3 4 OUT
TC75S51F
V1 V2
0Vdc
V3
0Vdc 3
0
Compasion Table
Measurement Simulation % Error
Ib (pA) 1 1.002 0.2
IOS (pA) 1 0.995 -0.5
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Input Offset Voltage
Simulation result
Simulation
Evaluation Circuit
U3
IN+ VDD
1 5
VSS
2
IN- OUT
3 4 OUT
V1
TC75S51F
0 3 V2
0
Compasion Table
Measurement Simulation %Error
VOS (mV) 2 1.99 -0.5
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Open loop Voltage Gain
Simulation result
Simulation
Evaluation Circuit
U3
IN+ VDD
1 5
VSS
2
IN- OUT
IN 3 4 OUT
V2
3
TC75S51F
V1
VOFF = 0
VAMPL = 0
FREQ = 0
AC = 1m
DC = -1.99m
0
Compasion Table
Measurement Simulation %Error
Av (dB) 70 70.039 0.055
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Unity Gain Frequency
Simulation result
Simulation
Evaluation Circuit
U3
IN+ VDD
1 5
VSS
2
OUT1
IN- OUT
3 4
RF
IN1 V4
TC75S51F
0.1MEG
V5 C1
VOFF = 0 10p 3
VAMPL = 0
FREQ = 0 RS
DC = 19.291m
AC = 1m 1k
0
Compasion Table
AV=40dB,CL=10pF Measurement Simulation %Error
Ft(MHz) 0.6 0.597 -0.5
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Common-Mode Rejection Ratio
Simulation result
Simulation
ACM=400.038m/224.242m
Evaluation Circuit
U4
IN+ VDD
1 5
VSS
2
IN- OUT
3 4
V2 V3
-1.99m 3
TC75S51F
V1
VOFF = 0
VAMPL = 0.5
FREQ = 1
AC = 1m
DC = 0
0
CMRR = AV/ACM
Compasion Table
Measurement Simulation %Error
CMRR (dB) 65 65.011 0.016
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Slew Rate
Simulation result
Evaluation Circuit
U3
IN+ VDD
1 5
VSS
2
IN- OUT
3 4 OUT
V1 = 0 V1
V2 = 3
TD = 10u V2
TC75S51F
TR = 6n
TF = 6n
PW = 50u 3
PER = 100u
0
Measurement Simulation % Error
SR (V/us) 0.5 0.49 -2
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005