This document contains simulations of switching waveforms for SiC BJT and SiC SBD devices. The first simulation shows the reverse recovery waveform of an SiC SBD carrying 8A at 500V, with a peak reverse recovery power loss of 25.122W. The second simulation tests an SiC BJT in a similar circuit carrying 4A at 500V. The third simulation shows the switching waveforms of an SiC BJT carrying 8A at 500V, with turn-on and turn-off power losses of 2.215KW and 3.0KW respectively.

1. Switching Waveform(Pspice)
SiC BJT1 & SiC SBD1
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2. Test circuit (SiC SBD1)
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V2
500V
0
0
D1
D1N5817
D2
D1N5817
R1
50
0
R2
10
R3
5
U1
SBD1
V1
TD = 1.76u
TF = 10n
PW = 4.24u
PER = 200u
V1 = -53
TR = 10n
V2 = 15.62
L1
500u
IC = 8
1
2
U2
BJT1

3. Reverse-Recovery (IF=8A, VR=500V)
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Time
0s 1.0us 2.0us 3.0us 4.0us 5.0us
1 V(U1:A,U1:K) 2 I(U1:A)
-600V
-400V
-200V
0V
200V
400V
600V
1
>>
-10A
-5A
0A
5A
10A
2
W(U1)
0W
50W
100W
SEL>>
PLOSS(PEAK)=25.122W
IF=8A
VR=500V

4. Test circuit (SiC BJT1)
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V2
500V
0
0
D1
D1N5817
D2
D1N5817
R1
50
0
R2
10
R3
5
U1
SBD1
V1
TD = 1.76u
TF = 10n
PW = 4.24u
PER = 200u
V1 = -53
TR = 10n
V2 = 15.62
L1
500u
IC = 4
1
2
U2
BJT1

5. Switching Waveform (IC=8A, VCE=500V)
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Time
0s 1.0us 2.0us 3.0us 4.0us 5.0us 6.0us 7.0us 8.0us
1 V(U2:COL,U2:EMTR) 2 I(U2:COL) 3 I(U2:BASE)
0V
-0.6KV
0.6KV
1
>>
-10A
-8A
-6A
-4A
-2A
0A
2A
4A
6A
8A
10A
2
-1.5A
-1.0A
-0.5A
0A
0.5A
1.0A
1.5A
3
W(U2)
0W
4.0KW
-2.0KW
SEL>>
PLOSS(PEAK)=2.215KW
Turn-On Turn-Off
PLOSS(PEAK)=3.0KW
IC=8A
VCE=500V
IB1=0.2A
IB2=-1.0A