This document provides a device modeling report for a TOSHIBA SSM3K104TU power MOSFET. It includes: 1) Details of the MOSFET components and manufacturer. 2) A PSpice model listing parameters for the MOSFET. 3) Results of circuit simulations characterizing the MOSFET's transconductance, Vgs-Id relationship, Rds(on), gate charge, capacitance, switching time, output characteristics, forward/reverse currents, and zener voltage. Comparisons to measurement data show good agreement between simulation and measurement.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: SSM3K104TU
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

3. Transconductance Characteristic
Circuit Simulation Result
10
Measurement
Simulation
8
6
gfs
4
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
ID : Drain Current A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.010 0.667 0.641 -3.898
0.020 1.000 0.968 -3.200
0.050 1.515 1.512 -0.198
0.100 2.170 2.155 -0.691
0.200 2.940 2.938 -0.068
0.500 4.545 4.544 -0.022
1.000 6.250 6.242 -0.128
2.000 8.696 8.695 -0.011
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

4. Vgs-Id Characteristic
Circuit Simulation result
10A
1.0A
100mA
10mA
1.0mA
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U2
SSM3K104TU
Vv ariable
10Vdc 10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

5. Comparison Graph
Circuit Simulation Result
10.00
Measurement
Simulation
1.00
ID : Drain Current A
0.10
0.01
0.0 0.4 0.8 1.2 1.6 2.0
VGS : Gate to Source Voltage V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.010 0.750 0.754 0.533
0.020 0.780 0.766 -1.795
0.050 0.800 0.791 -1.125
0.100 0.840 0.819 -2.500
0.200 0.880 0.859 -2.386
0.500 0.950 0.939 -1.158
1.000 1.060 1.031 -2.736
2.000 1.210 1.165 -3.719
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

6. Rds(on) Characteristic
Circuit Simulation result
2.0A
1.5A
1.0A
0.5A
0A
0V 10mV 20mV 30mV 40mV 50mV
I(V3)
V_VDS/2
Evaluation circuit
V3
0Vdc
U2
SSM3K104TU
VDS
4Vdc 0Vdc
VGS
0
Simulation Result
ID=2A, VGS=4V Measurement Simulation Error (%)
R DS (on) () 0.044 0.0440 0.068
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

7. Gate Charge Characteristic
Circuit Simulation result
15V
12V
9V
6V
3V
0V
0 5n 10n 15n 20n 25n 30n 35n 40n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
U2
SSM3K104TU
PER = 1000u Dbreak
PW = 600u W1
TF = 10n + D1
TR = 10n I2
-
TD = 0 3Adc
I2 = 1m W
I1 IOFF = 0.1mA
I1 = 0 ION = 0uA
V1
15Vdc
0
Simulation Result
VDD=15V,ID=3A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nc) 1.040 1.048 0.769
Qgd(nc) 2.000 2.016 0.800
Qg(nc) 20.800 20.806 0.029
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
VDS(V) Cbd(pF) Error(%)
Measurement Simulation
1.000 850.000 849.000 -0.118
2.000 620.000 640.000 3.226
5.000 440.000 448.000 1.818
10.000 340.000 330.000 -2.941
20.000 250.000 243.000 -2.800
50.000 160.000 159.000 -0.625
100.000 114.000 113.000 -0.877
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

9. Switching Time Characteristic
Circuit Simulation result
15V
12V
9V
6V
3V
0V
1.85us 1.95us 2.00us 2.10us 2.20us 2.25us 2.35us
V(2)*4 V(3)
Time
Evaluation circuit
3 L2
50n
U2 RL
SSM3K104TU
5
R1 L1 2
V1 = 0 4.7 30nH VDD
V2 = 5 V2 10Vdc
TD = 2u R2
TR = 6n
TF = 7n 4.7
PW = 2u
PER = 10u
0
Simulation Result
ID=2A, VDD=10V
Measurement Simulation Error(%)
VGS=2.5V
Ton(ns) 18.000 18.360 2.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

10. Output Characteristic
Circuit Simulation result
6.0A
10 4 2.5 1.8
5.0A
1.5
4.0A
3.0A
2.0A
VGS= 1.2 V
1.0A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U2
SSM3K104TU
Vv ariable
10Vdc
0Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

11. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
10mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc SSM3K104TU
U3
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

12. Comparison Graph
Circuit Simulation Result
10.00
Measurement
Simulation
Drain reverse current IDR(A)
1.00
0.10
0.01
0 0.2 0.4 0.6 0.8 1 1.2
Source: Drain voltage VSD(V)
Simulation Result
VDS(V) VDS(V)
IDR(A) %Error
Measurement Simulation
0.010 0.488 0.489 0.205
0.020 0.509 0.511 0.393
0.050 0.539 0.540 0.186
0.100 0.565 0.563 -0.354
0.200 0.590 0.586 -0.678
0.500 0.614 0.615 0.163
1.000 0.640 0.638 -0.313
2.000 0.655 0.660 0.763
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
19.98us 20.00us 20.02us 20.04us 20.06us 20.08us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.7v
TD = 1n DSSM3K104TU
TR = 10ns U2
TF = 6ns
PW = 20us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(ns) 10.000 10.129 1.290
trb(ns) 11.500 11.633 1.157
trr(ns) 21.500 21.762 1.219
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

14. Reverse Recovery Characteristic Reference
Trj=10(ns)
Trb=11.5(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

15. Zener Voltage Characteristic
Circuit Simulation Result
10uA
9uA
8uA
7uA
6uA
5uA
4uA
3uA
2uA
1uA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U2
V1 SSM3K104TU
0Vdc
R2
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008