1. The document investigates the impact of different surface passivation techniques (thermal oxidation, direct N2O growth, and direct PSG growth) on Schottky barrier diodes formed using Mo, Ni, and Ti contacts on 4H-SiC surfaces. 2. Electrical characterization of the diodes before and after contact annealing showed that surface passivation reduced interface traps and charge at the metal-semiconductor interface. 3. A notable result was that Mo diodes formed on surfaces treated with PSG exhibited exceptionally low leakage currents, even at high temperatures, breaking the typical trade-off between turn-on voltage and leakage.