The document details a device modeling report for an LED (OSUB3131P) by Opto Supply Bee Technologies Inc., including specifications such as saturation current, series resistance, and capacitance characteristics. It presents circuit simulation results for forward current characteristics and reverse recovery characteristics, comparing measured values with simulated data for accuracy. The report also includes copyright notices and several simulation graphs illustrating the performance metrics and errors between measurements and simulations.

1. Device Modeling Report
COMPONENTS: Light-Emitting Diode LED / STANDARD
PART NUMBER: OSUB3131P
MANUFACTURER: Opto Supply
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

3. Forward Current Characteristic
Circuit Simulation Result
100mA
80mA
60mA
40mA
20mA
0A
0.1V 2.0V 4.0V 5.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 D1
0Vdc
DOSUB3131P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

4. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.001 2.600 2.592 - 0.308
0.002 2.700 2.687 - 0.481
0.005 2.810 2.821 0.391
0.010 2.930 2.936 0.205
0.020 3.070 3.077 0.228
0.050 3.350 3.351 0.015
0.100 3.700 3.697 - 0.081
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

5. Forward Current Characteristic Reference
Measurement
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

6. Capacitance Characteristic
Circuit Simulation Result
80p
70p
60p
50p
40p
100mV 1.0V 4.9V
I(V2)/(5V/1us)
V(N00016)
Evaluation Circuit
V2
0Vdc
V2 = 5 V1 D1
V1 = 0
TD = 0
TR = 1u DOSUB3131P
TF = 50n
PW = 5u
PER = 10u
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF)
Vrev(V) %Error
Measurement Simulation
0.100 73.000 72.838 - 0.222
0.200 71.966 72.087 0.168
0.500 69.904 70.042 0.197
1.000 67.025 66.819 - 0.307
2.000 61.000 61.249 0.408
5.000 49.000 49.500 1.020
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

8. Reverse Recovery Characteristic
Circuit Simulation Result
80mA
40mA
0A
-40mA
-80mA
19.94us 19.98us 20.02us 20.06us 20.10us 20.14us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = 0.8
V1
V2 = 5.28
TD = 5.79n D1
TR = 10n
TF = 6n DOSUB3131P
PW = 20u
PER = 50u
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj+trb=trr 23.20 ns 23.28 ns 0.345
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

9. Reverse Recovery Characteristic Reference
Measurement
Trj =5.6(ns)
Trb=17.6(ns)
Conditions: Ifwd=Irev=0.04(A), Rl=25
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006