SPICE MODEL of OSWT5111A , White ,TA=40degree (Standard Model) in SPICE PARK

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This document summarizes the device modeling report for an LED component. It describes the key parameters in the PSpice model, shows simulation results for forward current, capacitance, and reverse recovery characteristics that compare favorably to measurements, and provides reference data for the reverse recovery times.

Technology

Device Modeling Report

COMPONENTS: Light-Emitting Diode (LED) STANDARD
PART NUMBER: OSWT5111A
MANUFACTURER: OPTO SUPPLY
REMARK: 40 degree C

Bee Technologies Inc.

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

Forward Current Characteristic

Circuit Simulation Result

Evaluation Circuit

R1

0.01m

V1 D1
0Vdc

OSWT5111A_40C

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

Forward Current Characteristic Reference

OSWT5111A_40C

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

Comparison Graph

Circuit Simulation Result

Simulation Result

Vfwd(V) Vfwd(V)
Ifwd(A) Measurement Simulation %Error
0.5 2.65 2.64 0.37735
1 2.69 2.701 0.40892
2 2.775 2.776 0.03603
5 2.9 2.904 0.13793
10 3.045 3.043 0.06568
20 3.245 3.241 0.12326
50 3.68 3.681 0.02717

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

Capacitance Characteristic

Circuit Simulation Result

Evaluation Circuit

R1

50
V2 = 3.0V V1
V1 = 0.96V D1
TD = 0
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us OSWT5111A_40C

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

Comparison Graph

Circuit Simulation Result

Simulation Result

Cj(pF) Cj(pF)
Vrev(V) Measurement Simulation %Error
0 69.175 69.175 0
0.1 68.62 68.56 0.0874
0.2 68.12 68.084 0.0528
0.5 67 66.83 0.2537
1 65.3 65.556 0.3920
2 63.85 64 0.2349
4.5 62.2 61.986 0.3440

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

Reverse Recovery Characteristic

Circuit Simulation Result

Evaluation Circuit

R1

50
V2 = 3.4V V1
V1 = 1.39V D1
TD = 0
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us OSWT5111A_40C

0

Compare Measurement vs. Simulation

Symbol Measurement Unit Simulation Unit %Error
Trr=trj+trb 35.2 ns 35.17 ns 0.0852

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

Reverse Recovery Characteristic Reference

TA= 40C

Measurement

Trj =12(ns)
Trb=23.2(ns)
Conditions: Ifwd=Irev=0.02(A), Rl=50

Example

Relation between trj and trb

All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

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SPICE MODEL of OSWT5111A , White ,TA=40degree (Standard Model) in SPICE PARK

1. Device Modeling Report COMPONENTS: Light-Emitting Diode (LED) STANDARD PART NUMBER: OSWT5111A MANUFACTURER: OPTO SUPPLY REMARK: 40 degree C Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) Measurement Simulation %Error 0.5 2.65 2.64 0.37735 1 2.69 2.701 0.40892 2 2.775 2.776 0.03603 5 2.9 2.904 0.13793 10 3.045 3.043 0.06568 20 3.245 3.241 0.12326 50 3.68 3.681 0.02717 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Capacitance Characteristic Circuit Simulation Result Evaluation Circuit R1 50 V2 = 3.0V V1 V1 = 0.96V D1 TD = 0 TR = 10ns TF = 10ns PW = 20us PER = 50us OSWT5111A_40C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) Measurement Simulation %Error 0 69.175 69.175 0 0.1 68.62 68.56 0.0874 0.2 68.12 68.084 0.0528 0.5 67 66.83 0.2537 1 65.3 65.556 0.3920 2 63.85 64 0.2349 4.5 62.2 61.986 0.3440 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. Reverse Recovery Characteristic Circuit Simulation Result Evaluation Circuit R1 50 V2 = 3.4V V1 V1 = 1.39V D1 TD = 0 TR = 10ns TF = 10ns PW = 20us PER = 50us OSWT5111A_40C 0 Compare Measurement vs. Simulation Symbol Measurement Unit Simulation Unit %Error Trr=trj+trb 35.2 ns 35.17 ns 0.0852 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

9. Reverse Recovery Characteristic Reference TA= 40C Measurement Trj =12(ns) Trb=23.2(ns) Conditions: Ifwd=Irev=0.02(A), Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

SPICE MODEL of OSWT5111A , White ,TA=40degree (Standard Model) in SPICE PARK

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