The document contains a device modeling report for the L709CE pin diode produced by Litec Corporation. It includes detailed parameters such as saturation current, series resistance, and junction capacitance, alongside circuit simulation results for forward and reverse characteristics. The data is accompanied by measurement comparisons to validate simulation accuracy.

1. Device Modeling Report
COMPONENTS: PIN Diode
PART NUMBER: L709CE
MANUFACTURER: Litec Corporation
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

3. Forward Current Characteristic
Circuit Simulation Result
100mA
10mA
1.0mA
100uA
0V 1.0V 1.5V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc
L709CE
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

4. Comparison Graph
Circuit Simulation Result
Simulation Result
VF(V)
IF(mA) Error(%)
Measurement Simulation
0.100 0.570 0.571 0.175
0.200 0.600 0.600 0.000
0.500 0.640 0.639 -0.156
1.000 0.665 0.666 0.150
2.000 0.695 0.695 0.000
5.000 0.735 0.735 0.000
10.000 0.765 0.766 0.131
20.000 0.800 0.800 0.000
50.000 0.860 0.860 0.000
100.000 0.918 0.919 0.109
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Junction Capacitance Characteristic
Circuit Simulation Result
100p
10p
1.0p
100f
10f
100mV 1.0V 10V 50V
I(V2)/(180V/1us)
V(N12656)
Evaluation Circuit
V2
0Vdc
V2 = 180 V1 U1
TD = 0
V1 = 0 L709CE
TR = 1us
PW = 50us
TF = 10ns
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Comparison Graph
Circuit Simulation Result
Simulation Result
Ct(pF)
VR+0.65(V) Error(%)
Measurement Simulation
1.150 0.680 0.668 -1.765
1.650 0.660 0.655 -0.758
2.650 0.630 0.632 0.317
5.650 0.570 0.567 -0.526
10.650 0.520 0.533 2.500
20.650 0.480 0.462 -3.750
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Reverse Characteristic
Circuit Simulation Result
1.0uA
100nA
10nA
1.0nA
1.0V 10V 100V 1.0KV
-I(V1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc
L709CE
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. Comparison Graph
Circuit Simulation Result
Simulation Result
VR(V)
IR(nA) Error(%)
Measurement Simulation
13.600 1.000 1.000 0.000
20.000 6.200 6.000 -3.226
30.000 80.500 80.000 -0.621
32.840 200.000 200.000 0.000
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005