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August 2007 Rev 12 1/18
18
STB20NM60-1 - STP20NM60FP
STB20NM60 - STP20NM60 - STW20NM60
N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2
/I2
PAK
MDmesh™ Power MOSFET
Features
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
The MDmesh™ is a new revolutionary Power
MOSFET technology that associates the multiple
drain process with the company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Figure 1. Internal schematic diagram
Type VDSS RDS(on) ID
STP20NM60
STP20NM60FP
STB20NM60
STB20NM60-1
STW20NM60
600V
600V
600V
600V
600V
< 0.29Ω
< 0.29Ω
< 0.29Ω
< 0.29Ω
< 0.29Ω
20A
20A
20A
20A
20A
TO-247
1
3
1
2
3
TO-220
D²PAK
1
2
3
TO-220FP
1 2 3
I²PAK
Table 1. Device summary
Part number Marking Package Packaging
STP20NM60 P20NM60 TO-220 Tube
STP20NM60FP P20NM60FP TO-220FP Tube
STB20NM60T4 B20NM60 D²PAK Tape & reel
STB20NM60-1 B20NM60-1 I²PAK Tube
STW20NM60 W20NM60 TO-247 Tube
www.st.com
Contents STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
2/18
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Electrical ratings
3/18
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220/D²PAK
I²PAK/TO-247
TO-220FP
VDS Drain-source voltage (VGS = 0) 600 V
VGS Gate- source voltage ±30 V
ID Drain current (continuous) at TC = 25°C 20 20 (1)
1. Limited only by maximum temperature allowed
A
ID Drain current (continuous) at TC = 100°C 12.6 12.6 (1)
A
IDM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 80 80 (1)
A
PTOT Total dissipation at TC = 25°C 192 45 W
Derating factor 1.5 0.36 W/°C
dv/dt (3)
3. ISD < 20A, di/dt < 400A/µs, VDD < V(BR)/DSS, Tj < TJMAX
Peak diode recovery voltage slope 15 V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
-- 2500 V
Tstg Storage temperature -65 to 150 °C
Tj Max. operating junction temperature 150 °C
Table 3. Thermal resistance
Symbol Parameter
TO-220/D²PAK
I²PAK/TO-247
TO-220FP Unit
Rthj-case Thermal resistance junction-case max 0.65 2.8 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
Tl
Maximum lead temperature for soldering
purpose
300 °C
Table 4. Avalanche data
Symbol Parameter Max. value Unit
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
10 A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAS, VDD = 50 V)
650 mJ
Electrical characteristics STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
4/18
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS = 0 600 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS= Max rating,@125°C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 30V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 10 A 0.25 0.29 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID = 10 A
11 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
1500
350
35
pF
pF
pF
Coss eq.
(2)
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Equivalent output
capacitance
VGS = 0V, VDS = 0V to
480 V
215 pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 20 A,
VGS = 10V
(see Figure 16)
39
10
20
54 nC
nC
nC
Rg Gate input resistance
f = 1 MHz Gate DC
bias=0 Test signal
level = 20 mV
open drain
1.6 Ω
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Electrical characteristics
5/18
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 10 A
RG = 4.7Ω VGS = 10 V
(see Figure 15)
25
20
42
11
ns
ns
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
ISD
ISDM
(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
20
80
A
A
VSD
(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage ISD = 20 A, VGS = 0 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =20A, di/dt=100A/µs,
VDD = 60 V
(see Figure 20)
390
5
25
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =20A, di/dt=100A/µs,
Tj = 150°C, VDD = 60 V
(see Figure 20)
510
6.5
26
ns
µC
A
Electrical characteristics STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
6/18
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 /
D²PAK / I²PAK
Figure 3. Thermal impedance for TO-220 /
D²PAK / I²PAK
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Output characterisics Figure 7. Transfer characteristics
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Electrical characteristics
7/18
Figure 8. Transconductance Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
Electrical characteristics STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
8/18
Figure 14. Source-drain diode forward
characteristics
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Test circuit
9/18
3 Test circuit
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test
circuit
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
Package mechanical data STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
10/18
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Package mechanical data
11/18
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102
b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134
c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e 5.45 0.214
L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216
S 5.50 0.216
TO-247 MECHANICAL DATA
Package mechanical data STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
12/18
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
TO-220 MECHANICAL DATA
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Package mechanical data
13/18
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
A1 2.40 2.72 0.094 0.107
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.49 0.70 0.019 0.027
c2 1.23 1.32 0.048 0.052
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
E 10 10.40 0.393 0.410
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055
TO-262 (I2PAK) MECHANICAL DATA
Package mechanical data STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
14/18
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
L5
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
TO-220FP MECHANICAL DATA
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Package mechanical data
15/18
TO-247 MECHANICAL DATA
1
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º 4º
D2
PAK MECHANICAL DATA
3
Packaging mechanical data STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
16/18
5 Packaging mechanical data
TAPE AND REEL SHIPMENT
D2
PAK FOOTPRINT
* on sales type
DIM.
mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
BASE QTY BULK QTY
1000 1000
REEL MECHANICAL DATA
DIM.
mm inch
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
TAPE MECHANICAL DATA
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Revision history
17/18
6 Revision history
Table 9. Document revision history
Date Revision Changes
26-Jul-2004 8 First Release
17-Feb-2005 9 Insert the TO-247 package
25-Oct-2006 10 The document has been reformatted
18-Dec-2006 11 Text updates on Table 5.
27-Aug-2007 12 Updated Figure 2 and Figure 4
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
18/18
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
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www.st.com

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Original N-CHANNEL MOSFET STF40NF20 40NF20 40N20 40A 200V TO-220 New STOriginal N-CHANNEL MOSFET STF40NF20 40NF20 40N20 40A 200V TO-220 New ST
Original N-CHANNEL MOSFET STF40NF20 40NF20 40N20 40A 200V TO-220 New ST
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Original N-Channel Mosfet STF9NK90Z F9NK90Z 8A 900V TO-220F New STMicroelectr...
Original N-Channel Mosfet STF9NK90Z F9NK90Z 8A 900V TO-220F New STMicroelectr...Original N-Channel Mosfet STF9NK90Z F9NK90Z 8A 900V TO-220F New STMicroelectr...
Original N-Channel Mosfet STF9NK90Z F9NK90Z 8A 900V TO-220F New STMicroelectr...
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Original MOSFET N-Channel STGF10NC60KD GF10NC60KD 10NC60 10N60 10A 600V New
Original MOSFET N-Channel STGF10NC60KD GF10NC60KD 10NC60 10N60 10A 600V NewOriginal MOSFET N-Channel STGF10NC60KD GF10NC60KD 10NC60 10N60 10A 600V New
Original MOSFET N-Channel STGF10NC60KD GF10NC60KD 10NC60 10N60 10A 600V New
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Original N-CHANNEL MOSFET GP8NC60KD 8NC60KD 8NC60 15A 600V TO-220 New STMicro...
Original N-CHANNEL MOSFET GP8NC60KD 8NC60KD 8NC60 15A 600V TO-220 New STMicro...Original N-CHANNEL MOSFET GP8NC60KD 8NC60KD 8NC60 15A 600V TO-220 New STMicro...
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Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...
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Original MOSFET N-CHANNEL STF5NK52ZD 5NK52ZD 5NK52 5A 520V New
Original MOSFET N-CHANNEL STF5NK52ZD 5NK52ZD 5NK52 5A 520V NewOriginal MOSFET N-CHANNEL STF5NK52ZD 5NK52ZD 5NK52 5A 520V New
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Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK ST...
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Original N-CHANNEL Mosfet STP20NK50Z 20NK50 20A 500V TO-220 New STMicroelectr...
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Original IGBT STGF20H60DF GF20H60DF 20H60 600V 20A TO-220F New STMicroelectro...
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Original N-channel 600 V 0.160 Ω 19 A PowerFLAT™ 8x8 HV ultra low gate charge...
Original N-channel 600 V 0.160 Ω 19 A PowerFLAT™ 8x8 HV ultra low gate charge...Original N-channel 600 V 0.160 Ω 19 A PowerFLAT™ 8x8 HV ultra low gate charge...
Original N-channel 600 V 0.160 Ω 19 A PowerFLAT™ 8x8 HV ultra low gate charge...
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Original N-Channel Mosfet STP65NF06 P65NF06 65A 60V TO-220 New ST
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Original N-Channel Mosfet STP10NK70ZFP P10NK70ZFP 10NK70 700V 8.6A TO-220F Ne...
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Original N-Channel Mosfet B19NB20 STB19NB20 19NB20 200V 19A TO-252 New STMicr...
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Original N-Channel Mosfet B19NB20 STB19NB20 19NB20 200V 19A TO-252 New STMicr...
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Original IGBT N-CHANNEL STGP7NC60HD GP7NC60HD 7NC60 14A 600V TO-220 New
Original IGBT N-CHANNEL STGP7NC60HD GP7NC60HD 7NC60 14A 600V TO-220 NewOriginal IGBT N-CHANNEL STGP7NC60HD GP7NC60HD 7NC60 14A 600V TO-220 New
Original IGBT N-CHANNEL STGP7NC60HD GP7NC60HD 7NC60 14A 600V TO-220 New
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Original N-CHANNEL MOSFET P3NK90ZF STD3NK90Z STP3NK90Z STP3NK90ZFP 900V - 4.1...
Original N-CHANNEL MOSFET P3NK90ZF STD3NK90Z STP3NK90Z STP3NK90ZFP 900V - 4.1...Original N-CHANNEL MOSFET P3NK90ZF STD3NK90Z STP3NK90Z STP3NK90ZFP 900V - 4.1...
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Original N Channel Mosfet 110N8F6 STP110N8F6 110A 80V TO-220 New
Original N Channel Mosfet 110N8F6 STP110N8F6 110A 80V TO-220 NewOriginal N Channel Mosfet 110N8F6 STP110N8F6 110A 80V TO-220 New
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Original N-Channel Mosfet STD12NF06LT4 12NF06 D12NF06 D12NF 60V 12A TO-252 Ne...
Original N-Channel Mosfet STD12NF06LT4 12NF06 D12NF06 D12NF 60V 12A TO-252 Ne...Original N-Channel Mosfet STD12NF06LT4 12NF06 D12NF06 D12NF 60V 12A TO-252 Ne...
Original N-Channel Mosfet STD12NF06LT4 12NF06 D12NF06 D12NF 60V 12A TO-252 Ne...
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Original N-Channel Mosfet STP55NF06LFP STB55NF06L-1 B55NF06L 60V 55A TO-252 N...
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Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New FairchildOriginal Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New Fairchild
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Similar to Original MOSFET P20NM60 20NM60 20N60C3 20N60 New (20)

Original N-CHANNEL MOSFET STF40NF20 40NF20 40N20 40A 200V TO-220 New ST
Original N-CHANNEL MOSFET STF40NF20 40NF20 40N20 40A 200V TO-220 New STOriginal N-CHANNEL MOSFET STF40NF20 40NF20 40N20 40A 200V TO-220 New ST
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Original N-Channel Mosfet STF9NK90Z F9NK90Z 8A 900V TO-220F New STMicroelectr...Original N-Channel Mosfet STF9NK90Z F9NK90Z 8A 900V TO-220F New STMicroelectr...
Original N-Channel Mosfet STF9NK90Z F9NK90Z 8A 900V TO-220F New STMicroelectr...
 
Original MOSFET N-Channel STGF10NC60KD GF10NC60KD 10NC60 10N60 10A 600V New
Original MOSFET N-Channel STGF10NC60KD GF10NC60KD 10NC60 10N60 10A 600V NewOriginal MOSFET N-Channel STGF10NC60KD GF10NC60KD 10NC60 10N60 10A 600V New
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Original N-CHANNEL MOSFET GP8NC60KD 8NC60KD 8NC60 15A 600V TO-220 New STMicro...
Original N-CHANNEL MOSFET GP8NC60KD 8NC60KD 8NC60 15A 600V TO-220 New STMicro...Original N-CHANNEL MOSFET GP8NC60KD 8NC60KD 8NC60 15A 600V TO-220 New STMicro...
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Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...
 
Original MOSFET N-CHANNEL STF5NK52ZD 5NK52ZD 5NK52 5A 520V New
Original MOSFET N-CHANNEL STF5NK52ZD 5NK52ZD 5NK52 5A 520V NewOriginal MOSFET N-CHANNEL STF5NK52ZD 5NK52ZD 5NK52 5A 520V New
Original MOSFET N-CHANNEL STF5NK52ZD 5NK52ZD 5NK52 5A 520V New
 
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK ST...
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK ST...Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK ST...
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Original N-CHANNEL Mosfet STP20NK50Z 20NK50 20A 500V TO-220 New STMicroelectr...
Original N-CHANNEL Mosfet STP20NK50Z 20NK50 20A 500V TO-220 New STMicroelectr...Original N-CHANNEL Mosfet STP20NK50Z 20NK50 20A 500V TO-220 New STMicroelectr...
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Original IGBT STGF20H60DF GF20H60DF 20H60 600V 20A TO-220F New STMicroelectro...
Original IGBT STGF20H60DF GF20H60DF 20H60 600V 20A TO-220F New STMicroelectro...Original IGBT STGF20H60DF GF20H60DF 20H60 600V 20A TO-220F New STMicroelectro...
Original IGBT STGF20H60DF GF20H60DF 20H60 600V 20A TO-220F New STMicroelectro...
 
Original N-channel 600 V 0.160 Ω 19 A PowerFLAT™ 8x8 HV ultra low gate charge...
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Original N-Channel Mosfet STP65NF06 P65NF06 65A 60V TO-220 New ST
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Original N-Channel Mosfet STP10NK70ZFP P10NK70ZFP 10NK70 700V 8.6A TO-220F Ne...Original N-Channel Mosfet STP10NK70ZFP P10NK70ZFP 10NK70 700V 8.6A TO-220F Ne...
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Original N-Channel Mosfet B19NB20 STB19NB20 19NB20 200V 19A TO-252 New STMicr...
Original N-Channel Mosfet B19NB20 STB19NB20 19NB20 200V 19A TO-252 New STMicr...Original N-Channel Mosfet B19NB20 STB19NB20 19NB20 200V 19A TO-252 New STMicr...
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Original IGBT N-CHANNEL STGP7NC60HD GP7NC60HD 7NC60 14A 600V TO-220 New
Original IGBT N-CHANNEL STGP7NC60HD GP7NC60HD 7NC60 14A 600V TO-220 NewOriginal IGBT N-CHANNEL STGP7NC60HD GP7NC60HD 7NC60 14A 600V TO-220 New
Original IGBT N-CHANNEL STGP7NC60HD GP7NC60HD 7NC60 14A 600V TO-220 New
 
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Original N-CHANNEL MOSFET P3NK90ZF STD3NK90Z STP3NK90Z STP3NK90ZFP 900V - 4.1...Original N-CHANNEL MOSFET P3NK90ZF STD3NK90Z STP3NK90Z STP3NK90ZFP 900V - 4.1...
Original N-CHANNEL MOSFET P3NK90ZF STD3NK90Z STP3NK90Z STP3NK90ZFP 900V - 4.1...
 
Original N Channel Mosfet 110N8F6 STP110N8F6 110A 80V TO-220 New
Original N Channel Mosfet 110N8F6 STP110N8F6 110A 80V TO-220 NewOriginal N Channel Mosfet 110N8F6 STP110N8F6 110A 80V TO-220 New
Original N Channel Mosfet 110N8F6 STP110N8F6 110A 80V TO-220 New
 
Original N-Channel Mosfet STD12NF06LT4 12NF06 D12NF06 D12NF 60V 12A TO-252 Ne...
Original N-Channel Mosfet STD12NF06LT4 12NF06 D12NF06 D12NF 60V 12A TO-252 Ne...Original N-Channel Mosfet STD12NF06LT4 12NF06 D12NF06 D12NF 60V 12A TO-252 Ne...
Original N-Channel Mosfet STD12NF06LT4 12NF06 D12NF06 D12NF 60V 12A TO-252 Ne...
 
Original N-Channel Mosfet STP55NF06LFP STB55NF06L-1 B55NF06L 60V 55A TO-252 N...
Original N-Channel Mosfet STP55NF06LFP STB55NF06L-1 B55NF06L 60V 55A TO-252 N...Original N-Channel Mosfet STP55NF06LFP STB55NF06L-1 B55NF06L 60V 55A TO-252 N...
Original N-Channel Mosfet STP55NF06LFP STB55NF06L-1 B55NF06L 60V 55A TO-252 N...
 
Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New Fairchild
Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New FairchildOriginal Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New Fairchild
Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New Fairchild
 
Original Mosfet N-channel IPAW60R600 60S600CE 600V 6A TO-220F New
Original Mosfet N-channel IPAW60R600 60S600CE 600V 6A TO-220F NewOriginal Mosfet N-channel IPAW60R600 60S600CE 600V 6A TO-220F New
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Original MOSFET P20NM60 20NM60 20N60C3 20N60 New

  • 1. August 2007 Rev 12 1/18 18 STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2 /I2 PAK MDmesh™ Power MOSFET Features ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Figure 1. Internal schematic diagram Type VDSS RDS(on) ID STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A 20A 20A 20A TO-247 1 3 1 2 3 TO-220 D²PAK 1 2 3 TO-220FP 1 2 3 I²PAK Table 1. Device summary Part number Marking Package Packaging STP20NM60 P20NM60 TO-220 Tube STP20NM60FP P20NM60FP TO-220FP Tube STB20NM60T4 B20NM60 D²PAK Tape & reel STB20NM60-1 B20NM60-1 I²PAK Tube STW20NM60 W20NM60 TO-247 Tube www.st.com
  • 2. Contents STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 2/18 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
  • 3. STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Electrical ratings 3/18 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit TO-220/D²PAK I²PAK/TO-247 TO-220FP VDS Drain-source voltage (VGS = 0) 600 V VGS Gate- source voltage ±30 V ID Drain current (continuous) at TC = 25°C 20 20 (1) 1. Limited only by maximum temperature allowed A ID Drain current (continuous) at TC = 100°C 12.6 12.6 (1) A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 80 80 (1) A PTOT Total dissipation at TC = 25°C 192 45 W Derating factor 1.5 0.36 W/°C dv/dt (3) 3. ISD < 20A, di/dt < 400A/µs, VDD < V(BR)/DSS, Tj < TJMAX Peak diode recovery voltage slope 15 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) -- 2500 V Tstg Storage temperature -65 to 150 °C Tj Max. operating junction temperature 150 °C Table 3. Thermal resistance Symbol Parameter TO-220/D²PAK I²PAK/TO-247 TO-220FP Unit Rthj-case Thermal resistance junction-case max 0.65 2.8 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 4. Avalanche data Symbol Parameter Max. value Unit IAS Avalanche current, repetitive or not- repetitive (pulse width limited by Tj max) 10 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAS, VDD = 50 V) 650 mJ
  • 4. Electrical characteristics STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 4/18 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS = 0 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS= Max rating,@125°C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 30V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 10 A 0.25 0.29 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward transconductance VDS > ID(on) x RDS(on)max, ID = 10 A 11 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 1500 350 35 pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Equivalent output capacitance VGS = 0V, VDS = 0V to 480 V 215 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 20 A, VGS = 10V (see Figure 16) 39 10 20 54 nC nC nC Rg Gate input resistance f = 1 MHz Gate DC bias=0 Test signal level = 20 mV open drain 1.6 Ω
  • 5. STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Electrical characteristics 5/18 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 10 A RG = 4.7Ω VGS = 10 V (see Figure 15) 25 20 42 11 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 20 80 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 20 A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD =20A, di/dt=100A/µs, VDD = 60 V (see Figure 20) 390 5 25 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD =20A, di/dt=100A/µs, Tj = 150°C, VDD = 60 V (see Figure 20) 510 6.5 26 ns µC A
  • 6. Electrical characteristics STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 6/18 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK / I²PAK Figure 3. Thermal impedance for TO-220 / D²PAK / I²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characterisics Figure 7. Transfer characteristics
  • 7. STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Electrical characteristics 7/18 Figure 8. Transconductance Figure 9. Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature
  • 8. Electrical characteristics STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 8/18 Figure 14. Source-drain diode forward characteristics
  • 9. STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Test circuit 9/18 3 Test circuit Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
  • 10. Package mechanical data STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 10/18 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
  • 11. STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Package mechanical data 11/18 DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.45 0.214 L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 TO-247 MECHANICAL DATA
  • 12. Package mechanical data STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 12/18 DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 TO-220 MECHANICAL DATA
  • 13. STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Package mechanical data 13/18 DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 TO-262 (I2PAK) MECHANICAL DATA
  • 14. Package mechanical data STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 14/18 L2 A B D E H G L6 F L3 G1 1 2 3 F2 F1 L7 L4 L5 DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 TO-220FP MECHANICAL DATA
  • 15. STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Package mechanical data 15/18 TO-247 MECHANICAL DATA 1 DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 4º D2 PAK MECHANICAL DATA 3
  • 16. Packaging mechanical data STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 16/18 5 Packaging mechanical data TAPE AND REEL SHIPMENT D2 PAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY 1000 1000 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 TAPE MECHANICAL DATA
  • 17. STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Revision history 17/18 6 Revision history Table 9. Document revision history Date Revision Changes 26-Jul-2004 8 First Release 17-Feb-2005 9 Insert the TO-247 package 25-Oct-2006 10 The document has been reformatted 18-Dec-2006 11 Text updates on Table 5. 27-Aug-2007 12 Updated Figure 2 and Figure 4
  • 18. STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 18/18 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com