This document provides specifications for the 2SA2222 PNP epitaxial planar silicon transistor intended for high-current switching applications. It lists maximum ratings, electrical characteristics, and switching time performance. Key specifications include a collector current rating of 10A (13A pulse), gain of 150-450, and turn-on time of 40ns.

1. 2SA2222
No. A1148-1/4
Applications
• Relay drivers, lamp drivers, motor drivers.
Features
• Adoption of MBIT process.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO --50 V
Collector-to-Emitter Voltage VCEO --50 V
Emitter-to-Base Voltage VEBO --6 V
Collector Current IC --10 A
Collector Current (Pulse) ICP --13 A
Base Current IB --2 A
Collector Dissipation PC
2 W
Tc=25°C 25 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA1148
32608FA TI IM TC-00001283
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
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2SA2222 PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
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2. 2SA2222
No. A1148-2/4
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current ICBO VCB=--40V, IE=0A --10 μA
Emitter Cutoff Current IEBO VEB=--4V, IC=0A --10 μA
DC Current Gain hFE VCE=--2V, IC=--270mA 150 450
Gain-Bandwidth Product fT VCE=--10V, IC=--1A 230 MHz
Output Capacitance Cob VCB=--10V, f=1MHz 115 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--6A, IB=--300mA --250 --500 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=--6A, IB=--300mA --1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=--100μA, IE=0A --50 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=∞ --50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--100μA, IC=0A --6 V
Turn-ON Time ton See specified Test Circuit. 40 ns
Storage Time tstg See specified Test Circuit. 240 ns
Fall Time tf See specified Test Circuit. 22 ns
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7508-002
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V
CollectorCurrent,IC--A
IC -- VCE
CollectorCurrent,IC--A
IT13441
0 --5--2 --3 --4--1
0
--1
--7
--6
--5
--4
--3
--2
--8
--9
--10
IB=0mA
--10mA
--60mA
--80mA
--90mA
--100mA
--150mA
--300mA
--400mA
--500mA
--20mA
--40mA
--50mA
--70mA
--30mA
--200mA
IT13442
0 --2.0--1.0 --1.5--0.5
0
--0.5
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--4.0
--4.5
--5.0
IB=0mA
--5mA
--30mA
--40mA
--45mA
--50mA
--90mA--100mA
--10mA
--20mA
--25mA
--35mA
--15mA
--60mA
--70mA
--80mA
VR
RL
VCC= --20VVBE=5V
IC=20IB1= --20IB2= --5A
+ +50Ω
INPUT
OUTPUT
RB
100μF 470μF
PW=20μs IB1
IB2
D.C.≤1%
10.0
3.2
4.5
2.8
16.0
18.1
5.6
14.0
3.5
7.22.4
1.6
1.2
0.70.75
2.55 2.55
1 2 3
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
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3. 2SA2222
No. A1148-3/4
Cob -- VCB
VBE(sat) -- IC
VCE(sat) -- IC
VCE(sat) -- IC
hFE -- ICIC -- VBE
hFE -- IC
CollectorCurrent,IC--A
Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A
DCCurrentGain,hFE
Collector Current, IC -- A
DCCurrentGain,hFE
Collector Current, IC -- A
Gain-BandwidthProduct,fT--MHz
Collector-to-Base Voltage, VCB -- V
OutputCapacitance,Cob--pF
Collector Current, IC -- A
Collector-to-Emitter
SaturationVoltage,VCE(sat)--V
Collector Current, IC -- A
Base-to-Emitter
SaturationVoltage,VBE(sat)--V
Collector Current, IC -- A
Collector-to-Emitter
SaturationVoltage,VCE(sat)--V
--0.1 --1.02 3 5 7 2 --103 5 7 2 3 5 7
5
3
7
100
5
3
7
2
IT13447
--0.1--0.01 7532 7532 7532--1.0 --10 32
IT13448
--1.0
2
3
5
7
2
3
IT13450
--0.1--0.01 7532 7532 --1.0 7532 2--10 3
--0.1
--1.0
5
--0.01
2
3
5
7
7
2
3
2
3
5
7
Ta=75°C
25°C
--25°C
IC / IB=20
IC / IB=20
Ta= --25°C
25°C
75°C
IT13446
--0.01 --0.12 3 5 7 2 --1.03 5 7 2 3 5 --107
5
3
10
2
7
100
5
3
2
VCE= --10V
IT13449
--0.1--0.01 7532 7532 --1.0 7532 2--10 3
--0.1
--1.0
--0.01
2
3
5
7
2
3
2
5
3
5
7
Ta=75°C
25°C
--25°C
IC / IB=50
IT13444
2
3
5
7
2
100
1000
10
3
5
7
--0.01 32 5 --0.17 2 3 5 --1.0 --107 2 323 5 57
Ta=75°C
25°C
VCE= --2V
--25
--20
--15
--5
--10
0
0
IT13443
--0.5 --1.0 --1.5 --2.0
VCE= --2V
25°C--25°C
Ta=75°C
IT13445
2
100
10
3
5
7
2
3
5
7
--0.01 32 5 --0.17 32 5 7 32 5 7--1.0 --10 2 3 5
Ta=25°C
VCE=--2.0V
--0.5V
--0.2V
f=1MHz
--25°C
--0.7V--1.0V
fT -- IC
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4. 2SA2222
No. A1148-4/4
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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PS
PC -- Ta
CollectorDissipation,PC--W
Ambient Temperature, Ta -- °C
CollectorCurrent,IC--A
Collector-to-Emitter Voltage, VCE -- V
PC -- Tc
CollectorDissipation,PC--W
Case Temperature, Tc -- °C
Forward Bias A S O
IT13452IT13451
IT13453
200 6040 80 100 140120 160
0
5
10
15
20
25
30
0
0.5
1.0
2.0
1.5
2.5
--0.01
--0.1
7
5
3
2
7
5
3
2
7
5
3
3
2
--1.0
--10
2
--1.0--0.1 222 53 7 --1002 53 7--1053 7
ICP= --13A
IC= --10A
200 6040 80 100 120 140 160
DC
operation
PT
=500μs
100ms
10ms
1msTc=25°C
Single pulse
No heat sink
This catalog provides information as of March, 2008. Specifications and information herein are subject
to change without notice.
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