On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work a Single-Stage Multi-path Operational Amplifier, To Increase their Density
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path
operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure
with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
ON DECREASING OF DIMENSIONS OF FIELDEFFECT TRANSISTORS WITH SEVERAL SOURCESmsejjournal
We analyzed mass and heat transport during manufacturing field-effect heterotransistors with several sources to decrease their dimensions. Framework the result of manufacturing it is necessary to manufacture heterostructure with specific configuration. After that it is necessary to dope required areas of the heterostructure by diffusion or ion implantation to manufacture the required type of conductivity (p or n). After
the doping it is necessary to do optimize annealing. We introduce an analytical approach to prognosis mass
and heat transport during technological processes. Using the approach leads to take into account nonlinearity of mass and heat transport and variation in space and time (at one time) physical parameters of these processes
ON OPTIMIZATION OF MANUFACTURING OF FIELD-EFFECT HETEROTRANSISTORS FRAMEWORK ...ijoejournal
In this paper we introduce an approach to increase density of field-effect transistors framework a voltage reference. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
ON OPTIMIZATION OF MANUFACTURING OF MULTICHANNEL HETEROTRANSISTORS TO INCREAS...ijrap
In this paper we consider an approach to increase integration rate of field-effect heterotransistors. Framework
the approach we consider a heterostructure with specific configuration. After manufacturing the
heterostructure we consider doping of required areas of the heterostructure by diffusion or ion implantation.
The doping finished by optimized annealing of dopant and/or radiation defects. Framework this paper
we consider a possibility to manufacture with several channels. Manufacturing multi-channel transistors
gives us a possibility the to increase integration rate of transistors and to increase electrical current
through the transistor.
ON OPTIMIZATION OF MANUFACTURING OF FIELD-EFFECT HETERO TRANSISTORS A THREE S...jedt_journal
In this paper we introduce an approach to increase density of field-effect hetero transistors framework a three-stage
amplifier circuit. At the same time one can obtain decreasing of dimensions of the above transistors. Dimensions of the elements will be decreased due to manufacture heterostructure with specific structure, doping of required areas of the hetero structure by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects.
OPTIMIZATION OF MANUFACTURING OF LOGICAL ELEMENTS "AND" MANUFACTURED BY USING...ijcsitcejournal
In this paper we introduce an approach to decrease dimensions of logical elements "AND" based on fieldeffect
heterotransistors. Framework the approach one shall consider a heterostructure with specific structure.
Several specific areas of the het
Optimization of technological process to decrease dimensions of circuits xor ...ijfcstjournal
The paper describes an approach of increasing of integration rate of elements of integrated circuits. The
approach has been illustrated by example of manufacturing of a circuit XOR. Framework the approach one
should manufacture a heterostructure with specific configuration. After that several special areas of the
heterostructure should be doped by diffusion and/or ion implantation and optimization of annealing of dopant
and/or radiation defects. We analyzed redistribution of dopant with account redistribution of radiation
defects to formulate recommendations to decrease dimensions of integrated circuits by using analytical
approaches of modeling of technological process.
ON INCREASING OF DENSITY OF ELEMENTS IN A MULTIVIBRATOR ON BIPOLAR TRANSISTORSijcsitcejournal
In this paper we consider an approach to increase density of elements of a multivibrator on bipolar transistors.
The considered approach based on manufacturing a heterostructure with necessity configuration,
doping by diffusion or ion implantation of required areas to manufacture the required type of conductivity
(p or n) in the areas and optimization of annealing of dopant and/or radiation defects to manufacture more
compact distributions of concentrations of dopants. We also introduce an analytical approach to prognosis
technological process.
OPTIMIZATION OF MANUFACTURE OF FIELDEFFECT HETEROTRANSISTORS WITHOUT P-NJUNCT...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors
in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions,
which include into their system). In this situation one can also obtain increasing of homogeneity
of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-
junction. Optimization of technological process with using inhomogeneity of heterostructure give us
possibility to manufacture the transistors as more compact.
ON DECREASING OF DIMENSIONS OF FIELDEFFECT TRANSISTORS WITH SEVERAL SOURCESmsejjournal
We analyzed mass and heat transport during manufacturing field-effect heterotransistors with several sources to decrease their dimensions. Framework the result of manufacturing it is necessary to manufacture heterostructure with specific configuration. After that it is necessary to dope required areas of the heterostructure by diffusion or ion implantation to manufacture the required type of conductivity (p or n). After
the doping it is necessary to do optimize annealing. We introduce an analytical approach to prognosis mass
and heat transport during technological processes. Using the approach leads to take into account nonlinearity of mass and heat transport and variation in space and time (at one time) physical parameters of these processes
ON OPTIMIZATION OF MANUFACTURING OF FIELD-EFFECT HETEROTRANSISTORS FRAMEWORK ...ijoejournal
In this paper we introduce an approach to increase density of field-effect transistors framework a voltage reference. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
ON OPTIMIZATION OF MANUFACTURING OF MULTICHANNEL HETEROTRANSISTORS TO INCREAS...ijrap
In this paper we consider an approach to increase integration rate of field-effect heterotransistors. Framework
the approach we consider a heterostructure with specific configuration. After manufacturing the
heterostructure we consider doping of required areas of the heterostructure by diffusion or ion implantation.
The doping finished by optimized annealing of dopant and/or radiation defects. Framework this paper
we consider a possibility to manufacture with several channels. Manufacturing multi-channel transistors
gives us a possibility the to increase integration rate of transistors and to increase electrical current
through the transistor.
ON OPTIMIZATION OF MANUFACTURING OF FIELD-EFFECT HETERO TRANSISTORS A THREE S...jedt_journal
In this paper we introduce an approach to increase density of field-effect hetero transistors framework a three-stage
amplifier circuit. At the same time one can obtain decreasing of dimensions of the above transistors. Dimensions of the elements will be decreased due to manufacture heterostructure with specific structure, doping of required areas of the hetero structure by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects.
OPTIMIZATION OF MANUFACTURING OF LOGICAL ELEMENTS "AND" MANUFACTURED BY USING...ijcsitcejournal
In this paper we introduce an approach to decrease dimensions of logical elements "AND" based on fieldeffect
heterotransistors. Framework the approach one shall consider a heterostructure with specific structure.
Several specific areas of the het
Optimization of technological process to decrease dimensions of circuits xor ...ijfcstjournal
The paper describes an approach of increasing of integration rate of elements of integrated circuits. The
approach has been illustrated by example of manufacturing of a circuit XOR. Framework the approach one
should manufacture a heterostructure with specific configuration. After that several special areas of the
heterostructure should be doped by diffusion and/or ion implantation and optimization of annealing of dopant
and/or radiation defects. We analyzed redistribution of dopant with account redistribution of radiation
defects to formulate recommendations to decrease dimensions of integrated circuits by using analytical
approaches of modeling of technological process.
ON INCREASING OF DENSITY OF ELEMENTS IN A MULTIVIBRATOR ON BIPOLAR TRANSISTORSijcsitcejournal
In this paper we consider an approach to increase density of elements of a multivibrator on bipolar transistors.
The considered approach based on manufacturing a heterostructure with necessity configuration,
doping by diffusion or ion implantation of required areas to manufacture the required type of conductivity
(p or n) in the areas and optimization of annealing of dopant and/or radiation defects to manufacture more
compact distributions of concentrations of dopants. We also introduce an analytical approach to prognosis
technological process.
OPTIMIZATION OF MANUFACTURE OF FIELDEFFECT HETEROTRANSISTORS WITHOUT P-NJUNCT...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors
in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions,
which include into their system). In this situation one can also obtain increasing of homogeneity
of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-
junction. Optimization of technological process with using inhomogeneity of heterostructure give us
possibility to manufacture the transistors as more compact.
Decreasing of quantity of radiation de fects inijcsa
Recently we introduced an approach to increase sharpness of diffusion-junction and implanted-junction
heterorectifiers. The heterorectifiers could by single and as a part of heterobipolar transistors. However
manufacturing p-n-junctions by ion implantation leads to generation of radiation defects in materials of
heterostructure. In this paper we introduce an approach to use an overlayer and optimization of annealing
of radiation defects to decrease quantity of radiation defects.
ON APPROACH TO DECREASE DIMENSIONS OF FIELD-EFFECT TRANSISTORS FRAMEWORK ELEM...ijfcstjournal
In this paper we consider manufacturing of elements SRAM with increased density of field-effect transistors
consisting these elements. The approach based on manufacturing of the elements in heterostructure with
specific configuration. We consider doping of several required areas of the heterostructure by diffusion or
by ion implantation. After that dopant and radiation defects have been annealed framework optimized
scheme.
ON OPTIMIZATION OF MANUFACTURING PLANAR DOUBLE-BASE HETEROTRANSISTORS TO DECR...ijaceeejournal
In this paper we consider an approach of manufacturing of double-base hetero transistors to decrease their
dimensions. Framework the approach it should be manufactured a heterostructure with specific configuration.
Farther it is necessary to dope certain areas of the hetero structure by diffusion or by ion implantation.
After finishing of the doping process the dopant and/or radiation defects should be annealed. We consider
an approach of optimization of dopant and/or radiation defects for manufacturing more compact double base
heterotransistors.
An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal ...ijrap
In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect heterotransistor. Based on analytical solution of the considered boundary problems some recommendations have been formulated to optimize technological processes.
ON OPTIMIZATION OF MANUFACTURING OF ELEMENTS OF AN BINARY-ROM CIRCUIT TO INCR...JaresJournal
In this paper we introduce an approach to increase integration rate of elements of an binary-ROM circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ANALYSIS OF MANUFACTURING OF VOLTAGE RESTORE TO INCREASE DENSITY OF ELEMENTS ...ijoejournal
We introduce an approach for increasing density of voltage restore elements. The approach based on
manufacturing of a heterostructure, which consist of a substrate and an epitaxial layer with special configuration.
Several required sections of the layer should be doped by diffusion or ion implantation. After
that dopants and/or radiation defects should be annealed.
ON OPTIMIZATION OF MANUFACTURING OF AN AMPLIFIER TO INCREASE DENSITY OF BIPOL...ijoejournal
In this paper we consider a possibility to increase density of bipolar heterotransistor framework an amplifier
due to decreasing of their dimensions. The considered approach based on doping of required areas of
heterostructure with specific configuration by diffusion or ion implantation. The doping finished by optimized
annealing of dopant and/or radiation defects. Analysis of redistribution of dopant with account redistribution
of radiation defects (after implantation of ions of dopant) for optimization of the above annealing
have been done by using recently introduced analytical approach. The approach gives a possibility
to analyze mass and heat transports in a heterostructure without crosslinking of solutions on interfaces
between layers of the heterostructure with account nonlinearity of these transports and variation in time of
their parameters.
In this paper we introduce an approach to increase vertical integration of elements of transistor-transistor logic with function AND-NOT. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ON OPTIMIZATION OF MANUFACTURING OF FIELD EFFECT HETEROTRANSISTORS FRAMEWORK ...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path
operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure
with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
ON APPROACH TO INCREASE DENSITY OF FIELD- EFFECT TRANSISTORS IN AN INVERTER C...antjjournal
In this paper we consider an approach to decrease dimensions of field-effect transistors framework invertors with increasing of their density. Framework the approach it is necessary to manufacture a
heterostructure, which consist of two layers. One of them includes into itself several sections. After manufacturing of the heterostructure these sections should be doped by diffusion or by ion implantation with future optimized annealing of dopant and/or radiation defects. To prognosis the technological process we consider an analytical approach, which gives a possibility to take into account variation of physical parameters in space and time. At the same time the approach gives a possibility to take into
account nonlinearity of mass and heat transport and to analyze the above transport without crosslinking solutions on interfaces between materials of heterostructure.
DESPECKLING OF SAR IMAGES BY OPTIMIZING AVERAGED POWER SPECTRAL VALUE IN CURV...ijistjournal
Synthetic Aperture Radar (SAR) images are inherently affected by multiplicative speckle noise, due to the coherent nature of scattering phenomena. In this paper, a novel algorithm capable of suppressing speckle noise using Particle Swarm Optimization (PSO) technique is presented. The algorithm initially identifies homogenous region from the corrupted image and uses PSO to optimize the Thresholding of curvelet coefficients to recover the original image. Average Power Spectrum Value (APSV) has been used as objective function of PSO. The Proposed algorithm removes Speckle noise effectively and the performance of the algorithm is tested and compared with Mean filter, Median filter, Lee filter, Statistic Lee filter, Kuan filter, frost filter and gamma filter., outperforming conventional filtering methods.
On Decreasing of Dimensions of Field-Effect Transistors with Several Sourcesmsejjournal
We analyzed mass and heat transport during manufacturing field-effect heterotransistors with several
sources to decrease their dimensions. Framework the result of manufacturing it is necessary to manufacture
heterostructure with specific configuration. After that it is necessary to dope required areas of the heterostructure by diffusion or ion implantation to manufacture the required type of conductivity (p or n). After
the doping it is necessary to do optimize annealing. We introduce an analytical approach to prognosis mass
and heat transport during technological processes. Using the approach leads to take into account nonlinearity of mass and heat transport and variation in space and time (at one time) physical parameters of these
processes
ON DECREASING OF DIMENSIONS OF FIELDEFFECT TRANSISTORS WITH SEVERAL SOURCESmsejjournal
We analyzed mass and heat transport during manufacturing field-effect heterotransistors with several
sources to decrease their dimensions. Framework the result of manufacturing it is necessary to manufacture
heterostructure with specific configuration. After that it is necessary to dope required areas of the heterostructure by diffusion or ion implantation to manufacture the required type of conductivity (p or n). After
the doping it is necessary to do optimize annealing. We introduce an analytical approach to prognosis mass
and heat transport during technological processes. Using the approach leads to take into account nonlinearity of mass and heat transport and variation in space and time (at one time) physical parameters of these
processes
Influence of Overlayers on Depth of Implanted-Heterojunction RectifiersZac Darcy
In this paper we compare distributions of concentrations of dopants in an implanted-junction rectifiers in a
heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
INFLUENCE OF OVERLAYERS ON DEPTH OF IMPLANTED-HETEROJUNCTION RECTIFIERSZac Darcy
In this paper we compare distributions of concentrations of dopants in an implanted-junction rectifiers in a
heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
ON APPROACH OF OPTIMIZATION OF FORMATION OF INHOMOGENOUS DISTRIBUTIONS OF DOP...ijcsa
We introduce an approach of manufacturing of a field-effect heterotransistor with inhomogenous doping of channel. The inhomogenous distribution of concentration of dopant gives a possibility to change speed of transport of charge carriers and to decrease length of channel.
Optimization of Manufacture of Field-Effect Heterotransistors without P-N-Jun...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions, which include into their system). In this situation one can also obtain increasing of homogeneity of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction. Optimization of technological process with using inhomogeneity of heterostructure give us possibility to manufacture the transistors as more compact.
Optimization of Manufacture of Field-Effect Heterotransistors without P-N-Jun...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions, which include into their system). In this situation one can also obtain increasing of homogeneity of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction. Optimization of technological process with using inhomogeneity of heterostructure give us possibility to manufacture the transistors as more compact.
ON APPROACH TO INCREASE INTEGRATION RATE OF ELEMENTS OF AN COMPARATOR CIRCUITjedt_journal
In this paper we introduce an approach to increase integration rate of elements of an comparator circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal ...ijrap
In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect
heterotransistor. Based on analytical solution of the considered boundary problems some recommendations
have been formulated to optimize technological processes.
Decreasing of quantity of radiation de fects inijcsa
Recently we introduced an approach to increase sharpness of diffusion-junction and implanted-junction
heterorectifiers. The heterorectifiers could by single and as a part of heterobipolar transistors. However
manufacturing p-n-junctions by ion implantation leads to generation of radiation defects in materials of
heterostructure. In this paper we introduce an approach to use an overlayer and optimization of annealing
of radiation defects to decrease quantity of radiation defects.
ON APPROACH TO DECREASE DIMENSIONS OF FIELD-EFFECT TRANSISTORS FRAMEWORK ELEM...ijfcstjournal
In this paper we consider manufacturing of elements SRAM with increased density of field-effect transistors
consisting these elements. The approach based on manufacturing of the elements in heterostructure with
specific configuration. We consider doping of several required areas of the heterostructure by diffusion or
by ion implantation. After that dopant and radiation defects have been annealed framework optimized
scheme.
ON OPTIMIZATION OF MANUFACTURING PLANAR DOUBLE-BASE HETEROTRANSISTORS TO DECR...ijaceeejournal
In this paper we consider an approach of manufacturing of double-base hetero transistors to decrease their
dimensions. Framework the approach it should be manufactured a heterostructure with specific configuration.
Farther it is necessary to dope certain areas of the hetero structure by diffusion or by ion implantation.
After finishing of the doping process the dopant and/or radiation defects should be annealed. We consider
an approach of optimization of dopant and/or radiation defects for manufacturing more compact double base
heterotransistors.
An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal ...ijrap
In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect heterotransistor. Based on analytical solution of the considered boundary problems some recommendations have been formulated to optimize technological processes.
ON OPTIMIZATION OF MANUFACTURING OF ELEMENTS OF AN BINARY-ROM CIRCUIT TO INCR...JaresJournal
In this paper we introduce an approach to increase integration rate of elements of an binary-ROM circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ANALYSIS OF MANUFACTURING OF VOLTAGE RESTORE TO INCREASE DENSITY OF ELEMENTS ...ijoejournal
We introduce an approach for increasing density of voltage restore elements. The approach based on
manufacturing of a heterostructure, which consist of a substrate and an epitaxial layer with special configuration.
Several required sections of the layer should be doped by diffusion or ion implantation. After
that dopants and/or radiation defects should be annealed.
ON OPTIMIZATION OF MANUFACTURING OF AN AMPLIFIER TO INCREASE DENSITY OF BIPOL...ijoejournal
In this paper we consider a possibility to increase density of bipolar heterotransistor framework an amplifier
due to decreasing of their dimensions. The considered approach based on doping of required areas of
heterostructure with specific configuration by diffusion or ion implantation. The doping finished by optimized
annealing of dopant and/or radiation defects. Analysis of redistribution of dopant with account redistribution
of radiation defects (after implantation of ions of dopant) for optimization of the above annealing
have been done by using recently introduced analytical approach. The approach gives a possibility
to analyze mass and heat transports in a heterostructure without crosslinking of solutions on interfaces
between layers of the heterostructure with account nonlinearity of these transports and variation in time of
their parameters.
In this paper we introduce an approach to increase vertical integration of elements of transistor-transistor logic with function AND-NOT. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ON OPTIMIZATION OF MANUFACTURING OF FIELD EFFECT HETEROTRANSISTORS FRAMEWORK ...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path
operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure
with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
ON APPROACH TO INCREASE DENSITY OF FIELD- EFFECT TRANSISTORS IN AN INVERTER C...antjjournal
In this paper we consider an approach to decrease dimensions of field-effect transistors framework invertors with increasing of their density. Framework the approach it is necessary to manufacture a
heterostructure, which consist of two layers. One of them includes into itself several sections. After manufacturing of the heterostructure these sections should be doped by diffusion or by ion implantation with future optimized annealing of dopant and/or radiation defects. To prognosis the technological process we consider an analytical approach, which gives a possibility to take into account variation of physical parameters in space and time. At the same time the approach gives a possibility to take into
account nonlinearity of mass and heat transport and to analyze the above transport without crosslinking solutions on interfaces between materials of heterostructure.
DESPECKLING OF SAR IMAGES BY OPTIMIZING AVERAGED POWER SPECTRAL VALUE IN CURV...ijistjournal
Synthetic Aperture Radar (SAR) images are inherently affected by multiplicative speckle noise, due to the coherent nature of scattering phenomena. In this paper, a novel algorithm capable of suppressing speckle noise using Particle Swarm Optimization (PSO) technique is presented. The algorithm initially identifies homogenous region from the corrupted image and uses PSO to optimize the Thresholding of curvelet coefficients to recover the original image. Average Power Spectrum Value (APSV) has been used as objective function of PSO. The Proposed algorithm removes Speckle noise effectively and the performance of the algorithm is tested and compared with Mean filter, Median filter, Lee filter, Statistic Lee filter, Kuan filter, frost filter and gamma filter., outperforming conventional filtering methods.
DESPECKLING OF SAR IMAGES BY OPTIMIZING AVERAGED POWER SPECTRAL VALUE IN CURV...
Similar to On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work a Single-Stage Multi-path Operational Amplifier, To Increase their Density
On Decreasing of Dimensions of Field-Effect Transistors with Several Sourcesmsejjournal
We analyzed mass and heat transport during manufacturing field-effect heterotransistors with several
sources to decrease their dimensions. Framework the result of manufacturing it is necessary to manufacture
heterostructure with specific configuration. After that it is necessary to dope required areas of the heterostructure by diffusion or ion implantation to manufacture the required type of conductivity (p or n). After
the doping it is necessary to do optimize annealing. We introduce an analytical approach to prognosis mass
and heat transport during technological processes. Using the approach leads to take into account nonlinearity of mass and heat transport and variation in space and time (at one time) physical parameters of these
processes
ON DECREASING OF DIMENSIONS OF FIELDEFFECT TRANSISTORS WITH SEVERAL SOURCESmsejjournal
We analyzed mass and heat transport during manufacturing field-effect heterotransistors with several
sources to decrease their dimensions. Framework the result of manufacturing it is necessary to manufacture
heterostructure with specific configuration. After that it is necessary to dope required areas of the heterostructure by diffusion or ion implantation to manufacture the required type of conductivity (p or n). After
the doping it is necessary to do optimize annealing. We introduce an analytical approach to prognosis mass
and heat transport during technological processes. Using the approach leads to take into account nonlinearity of mass and heat transport and variation in space and time (at one time) physical parameters of these
processes
Influence of Overlayers on Depth of Implanted-Heterojunction RectifiersZac Darcy
In this paper we compare distributions of concentrations of dopants in an implanted-junction rectifiers in a
heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
INFLUENCE OF OVERLAYERS ON DEPTH OF IMPLANTED-HETEROJUNCTION RECTIFIERSZac Darcy
In this paper we compare distributions of concentrations of dopants in an implanted-junction rectifiers in a
heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
ON APPROACH OF OPTIMIZATION OF FORMATION OF INHOMOGENOUS DISTRIBUTIONS OF DOP...ijcsa
We introduce an approach of manufacturing of a field-effect heterotransistor with inhomogenous doping of channel. The inhomogenous distribution of concentration of dopant gives a possibility to change speed of transport of charge carriers and to decrease length of channel.
Optimization of Manufacture of Field-Effect Heterotransistors without P-N-Jun...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions, which include into their system). In this situation one can also obtain increasing of homogeneity of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction. Optimization of technological process with using inhomogeneity of heterostructure give us possibility to manufacture the transistors as more compact.
Optimization of Manufacture of Field-Effect Heterotransistors without P-N-Jun...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions, which include into their system). In this situation one can also obtain increasing of homogeneity of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction. Optimization of technological process with using inhomogeneity of heterostructure give us possibility to manufacture the transistors as more compact.
ON APPROACH TO INCREASE INTEGRATION RATE OF ELEMENTS OF AN COMPARATOR CIRCUITjedt_journal
In this paper we introduce an approach to increase integration rate of elements of an comparator circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal ...ijrap
In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect
heterotransistor. Based on analytical solution of the considered boundary problems some recommendations
have been formulated to optimize technological processes.
AN APPROACH TO OPTIMIZE OF MANUFACTURING OF A VOLTAGE REFERENCE BASED ON HETE...JaresJournal
In this paper we introduce an approach to increase density of field-effect transistors framework a voltage
reference. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also
consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We
introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors. Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
An approach to decrease dimentions of logicalijcsa
In this paper we consider manufacturing logical elements with function AND-NOT based on bipolar transistors.Based on recently considered approach to decrease dimensions of solid state electronic devices with the same time increasing of their performance we introduce an approach to decrease dimensions of transistors and p-n-junctions, which became a part of the logical element. Framework the approach a heterostructure
with required configuration should be manufactured. After the manufacture required areas of the heterostructures should be doped by diffusion or ion implantation. The doping should be finished by optimized annealing of dopant and/or radiation defects.
On prognozisys of manufacturing doublebaseijaceeejournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account
nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this
heterostructure by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects.
The approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher
compactness of the considered bipolar transistor.
On optimization ofON OPTIMIZATION OF DOPING OF A HETEROSTRUCTURE DURING MANUF...ijcsitcejournal
We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δ-
doped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After
the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize
annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more
compact p-i-n-heterodiodes
ON MODEL OF MANUFACTURING OF A BAND-PASS FILTER TO INCREASE INTEGRATION RATE ...antjjournal
In this paper we introduce an approach to increase integration rate of field-effect heterotransistors in the
framework of band-pass filter. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ON VERTICAL INTEGRATION FRAMEWORK ELEMENT OF TRANSISTOR-TRANSISTOR LOGICijaceeejournal
In this paper we introduce an approach to increase vertical integration of elements of transistor-transistor
logic with function AND-NOT. Framework the approach we consider a heterostructure with special configuration.
Several specific areas of the heterostructure should be doped by diffusion or ion implantation.
Annealing of dopant and/or radiation defects should be optimized.
AN APPROACH FOR OPTIMIZATION OF MANUFACTURE MULTIEMITTER HETEROTRANSISTORSantjjournal
In this paper we introduced an approach to model manufacture process of a multiemitter heterotransistor.
The approach gives us also possibility to optimize manufacture process. p-n-junctions, which include into
the multiemitter heterotransistor, have higher sharpness and higher homogeneity of dopants distributions in enriched by the dopant area.
MODIFICATION OF DOPANT CONCENTRATION PROFILE IN A FIELD-EFFECT HETEROTRANSIST...msejjournal
In this paper we consider an approach of manufacturing more compact field-effect heterotransistors. The
approach based on manufacturing a heterostructure, which consist of a substrate and an epitaxial layer
with specific configuration. After that several areas of the epitaxial layer have been doped by diffusion or
ion implantation with optimized annealing of dopant and /or radiation defects. At the same time we introduce
an approach of modification of energy band diagram by additional doping of channel of the transistors.
We also consider an analytical approach to model and optimize technological process.
MODIFICATION OF DOPANT CONCENTRATION PROFILE IN A FIELD-EFFECT HETEROTRANSIST...msejjournal
In this paper we consider an approach of manufacturing more compact field-effect heterotransistors. The
approach based on manufacturing a heterostructure, which consist of a substrate and an epitaxial layer
with specific configuration. After that several areas of the epitaxial layer have been doped by diffusion or
ion implantation with optimized annealing of dopant and /or radiation defects. At the same time we introduce an approach of modification of energy band diagram by additional doping of channel of the transistors. We also consider an analytical approach to model and optimize technological process.
Similar to On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work a Single-Stage Multi-path Operational Amplifier, To Increase their Density (20)
A MODEL OF MANUFACTURING OF A MOSFETFILTER WITH ACCOUNT MISMATCH-INDUCED STRE...antjjournal
In the present time several actual problems of the solid state electronics (such as increasing of
performance, reliability and density of elements of integrated circuits: diodes, field-effect and bipolar
transistors) are intensively solving. To increase the performance of these devices it is attracted an interest
determination of materials with higher values of charge carriers mobility. One way to decrease dimensions
of elements of integrated circuits is manufacturing them in thin film heterostructures. In this paper we
introduce an approach to increase density of field-effect transistors in the framework of a metal-oxidesemiconductor field-effect transistor filter. In the framework of the approach we consider manufacturing of
the above filter in a heterostructure with specific configuration. Several appropriate areas of the
considered heterostructure should be doped by diffusion or by ion implantation. After the doping the
considered dopant and radiation defects should be annealed in the framework oh the recently considered
optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the
considered heterostructure. The decreasing of the mismatch-induced stress could be decreased by
radiation processing of appropriate areas of heterostructure. We introduce an analytical approach to
analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with
account mismatch-induced stress.
Performance Enhancement of Single Slope Solar Still Using Nano-Particles Mixe...antjjournal
ABSTRACT
The present paper reports on an experiment to improve the productivity of solar still using nano-particles. Solar distillation is a relatively simple treatment of brackish or impure water. In this solar energy is used to evaporate water then this vapour is condensed as pure water. This process removes salts and other impurities. Latest trend to improve the efficiency of the solar still is use of nano-particles like metal oxides. These particles increase surface area of absorption to solar radiation. In this work the Al2O3 nanoparticles mixed black paint is used to enhance the productivity of solar still. The solar radiations are transmitted through the glass cover and captured by a black painted inner bottom surface of the solar still. Water absorbs the heat and is converted into vapour within the chamber of the solar still.Single slop solar still is used from past decades but in this study effect of nano-particles on productivity of solar still is analyzed. Experimental work is performed for the single slope solar still (SS-SS) under climatic conditions of Jaipur. The use of the nano-particles mixed with black paint increases the temperature of the solar still basin. The productivity and efficiency of solar still at water depth 0.01 m with nano-particles are 3.48 litre and 38.65% respectively which are maximum values compared to water depths 0.02 m and 0.03 m. Results of the study gives 38.09% increment in productivity and 12.18% increment in thermal efficiency when nano-particles of size 50 nm to 100 nm mixed black paint used at water depth .01 m. To check the significance of difference in productivity of solar still with and without nano-particle mixed black paint, a paired t-Test is performed which is conforms that the productivity enhancement due to nano-particle mixed black paint is significant at 95% confidence interval.
KEYWORDS
Solar still, Distillation, Nano-particles, Productivity, TDS, P
Synthesis, Evaluation, Modeling and Simulation of Nano-Pore NAA Zeolite Membr...antjjournal
ABSTRACT
Zeolite membranes have uniform and molecular-sized pores that separate molecules based on the differences in the molecules’ adsorption and diffusion properties. Strong electrostatic interaction between ionic sites and water molecules (due to its highly polar nature) makes the zeolite NaA membrane very hydrophilic. Zeolite NaA membranes are thus well suited for the separation of liquid-phase mixtures by
pervaporation. In this study, experiments were conducted with various Ethanol–water mixtures (1–20 wt. %) at 25 °C. Total flux for Ethanol–water mixtures was found to vary from 0.331 to 0.229 kg/m2 .h with increasing Ethanol concentration from 1 to 20 wt.%. Ionic sites of the NaA zeolite matrix play a very important role in water transport through the membrane. These sites act both as water sorption and transport sites. Surface diffusion of water occurs in an activated fashion through these sites. The precise Nano-porous structure of the zeolite cage helps in a partial molecular sieving of the large solvent
molecules leading to high separation factors. A comparison between experimental flux and calculated flux using Stephan Maxwell (S.M.) correlation was made and a linear trend was found to exist for water flux through the membrane with Ethanol concentration. A comprehensive model also was proposed for the Ethanol/water pervaporation (PV) by Finite Element Method (FEM). The 2D model was masterfully capable of predicting water concentration distribution within both the membrane and the feed side of the pervaporation membrane module.
KEYWORDS
Nano pores; Pervaporation; Ethanol separation; Zeolite NaA membrane; FEM simulation
On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
REVIEW OF NANO TECHNOLOGY DEVELOPMENT IN TEXTILE INDUSTRY AND THE ROLE OF R &...antjjournal
The development of technology in the world, especially nanotechnology has also penetrated into the textile
sector. The application of nanotechnology to textiles has given its own advantages compared to
conventional textile technology. Nano technology has provided several advantages, such as: textiles with
multiple functions, better quality, cheaper and environmentally friendly. Through the application of
nanotechnology, types of textiles can be produced for many different uses, ranging from textiles to
aerospace, aeronautic, automotive, sportwear, fire fighting, to defense and security such as parachutes,
bulletproof clothes, and others. Thus for the Indonesian textile industry, in order to be able to compete with
the textile industry from outside, it is also necessary to adjust to the development of global technology. The
role of R&D institutions and universities is very strategic to develop nanotechnology where the industry is
unable to do so given the shortage of human resources and research facilities.
REVIEW OF NANO TECHNOLOGY DEVELOPMENT IN TEXTILE INDUSTRY AND THE ROLE OF R &...antjjournal
The development of technology in the world, especially nanotechnology has also penetrated into the textile
sector. The application of nanotechnology to textiles has given its own advantages compared to
conventional textile technology. Nano technology has provided several advantages, such as: textiles with
multiple functions, better quality, cheaper and environmentally friendly. Through the application of
nanotechnology, types of textiles can be produced for many different uses, ranging from textiles to
aerospace, aeronautic, automotive, sportwear, fire fighting, to defense and security such as parachutes,
bulletproof clothes, and others. Thus for the Indonesian textile industry, in order to be able to compete with
the textile industry from outside, it is also necessary to adjust to the development of global technology. The
role of R&D institutions and universities is very strategic to develop nanotechnology where the industry is
unable to do so given the shortage of human resources and research facilities.
A NOVEL PRECURSOR IN PREPARATION AND CHARACTERIZATION OF NICKEL OXIDE (NIO) A...antjjournal
Synthesis of Nickel Oxide (NiO) nanoparticles and cobalt oxide (CO3O4) materials synthesis by aqueous chemical growth (ACG) Techniques. Oxide based material having a wide band gap, and suitable for optical devices,Optoelectronic devices, UV photodetector, and Light emitting diode LEDs. The analysis
and characterizationof Nickel Oxide (NiO) and cobalt oxide (CO3O4) nanoparticles by(1) X-ray diffraction (XRD), (2) Scanning electron microscopy (SEM), and (3) Ultraviolet–visible (UV–Vis) spectroscopy.
WORK FUNCTION ESTIMATION OF BISMUTH DOPED ZNO THIN FILMantjjournal
In this paper we report bismuth (Bi) doped ZnO based heterojunction devices. The p-type Bi doped ZnO thin films have been deposited on n and p type silicon substrate using sol-gel spin coating method. The ptype nature of the deposited Bi doped ZnO thin films have been analyzed by hot point probe method. The electrical properties of the fabricated devices have been obtained from I-V characteristic measured using
semiconductor parameter analyzer. Finally, the work function of Bi doped ZnO has been estimated from the electrical parameter obtained from I-V calculations.
ON OPTIMIZATION OF MANUFACTURING OF FIELD EFFECT HETEROTRANSISTORS FRAMEWORK ...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path operational amplifier. At the same time one can obtain decreasing of
dimensions of the above transistors.Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
AN APPROACH TO OPTIMIZE MANUFACTURE OF AN ACTIVE QUADRATURE SIGNAL GENERATOR ...antjjournal
In this paper we introduce an approach to increase density of field-effect transistors framework an active
quadrature signal generator. Framework the approach we consider manufacturing the generator in heterostructure
with specific configuration. Several required areas of the heterostructure should be doped by diffusion
or ion implantation. After that dopant and radiation defects should by annealed framework optimized
scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered
heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures
during manufacturing of integrated circuits with account mismatch-induced stress.
SYNTHESIS, EVALUATION, MODELING AND SIMULATION OF NANO-PORE NAA ZEOLITE MEMBR...antjjournal
Zeolite membranes have uniform and molecular-sized pores that separate molecules based on the
differences in the molecules’ adsorption and diffusion properties. Strong electrostatic interaction between
ionic sites and water molecules (due to its highly polar nature) makes the zeolite NaA membrane very
hydrophilic. Zeolite NaA membranes are thus well suited for the separation of liquid-phase mixtures by
pervaporation. In this study, experiments were conducted with various Ethanol–water mixtures (1–20 wt.
%) at 25 °C. Total flux for Ethanol–water mixtures was found to vary from 0.331 to 0.229 kg/m2
.h with
increasing Ethanol concentration from 1 to 20 wt.%. Ionic sites of the NaA zeolite matrix play a very
important role in water transport through the membrane. These sites act both as water sorption and
transport sites. Surface diffusion of water occurs in an activated fashion through these sites. The precise
Nano-porous structure of the zeolite cage helps in a partial molecular sieving of the large solvent
molecules leading to high separation factors. A comparison between experimental flux and calculated flux
using Stephan Maxwell (S.M.) correlation was made and a linear trend was found to exist for water flux
through the membrane with Ethanol concentration. A comprehensive model also was proposed for the
Ethanol/water pervaporation (PV) by Finite Element Method (FEM). The 2D model was masterfully
capable of predicting water concentration distribution within both the membrane and the feed side of the
pervaporation membrane module.
Advanced Nanoscience and Technology: An International Journal (ANTJ) antjjournal
Advanced Nanoscience and Technology: An International Journal (ANTJ) is a peer-reviewed, open access journal, addresses the impacts and challenges of Nanoscience and Technology. The journal documents practical and theoretical results which make a fundamental contribution for the development of Nanoscience and Technology.
Advanced Nanoscience and Technology: An International Journal (ANTJ) antjjournal
Advanced Nanoscience and Technology: An International Journal (ANTJ) is a peer-reviewed, open access journal, addresses
the impacts and challenges of Nanoscience and Technology. The journal documents practical and theoretical results which make
a fundamental contribution for the development of Nanoscience and Technology.
Advanced Nanoscience and Technology: An International Journal (ANTJ) antjjournal
Advanced Nanoscience and Technology: An International Journal (ANTJ) is a peer-reviewed, open access journal, addresses the impacts and challenges of Nanoscience and Technology. The journal documents practical and theoretical results which make a fundamental contribution for the development of Nanoscience and Technology
In the present work micromachining of PMMA was carried out using KrF excimer laser. Excimer laser pulse with a wavelength of 248 nm was generated with a coherent COMPexPro 110 excimer laser system.
A micro-hole of Ø150 μm was machined on PMMA substrate during the experimentation. The PMMA substrate was mounted on the translation stage. The PMMA substrates were ex-posed to different number of pulses (1, 2, 5, 10, 20, 50 and 100) at repetition rate of 2, 5 and 10 Hz respectively by keeping the pulse energy unchanged at 200 mJ. In the present experimentation, the effect of pulse repetition rate and
number of pulses on ablation depth has been investigated. The experimental results for micromachining
demonstrate ablation process as a photo-chemical mechanism. The results of the experimentation have
revealed that, ablation depth is directly proportional to pulse number & pulse repetition rate has no significant effects on the ablation depth.
ENHANCED ACTIVITY OF ANTIBIOTICS BY LIPOSOMAL DRUG DELIVERYantjjournal
Liposome are the most widely used and the most extensively marketed nano-formulation that is being manufactured by pharmaceutical industries. Liposome can be modified in different size and structure. Conjugation of ligend with liposome surface increase the target specificity and changes the pharmacokinetic distribution of encapsulated drug. Different methods of preparation can
produce different types of liposomes. Many marketed formulations are available as liposome and
has proved to be more useful than the conventional formulations. Antibiotics of different classes such as quinolones, aminoglycosides, beta-lactams, cephalosporins, retroviral, macrolides and polypeptides are associated with the shortcomings of drug toxicities, lower bioavailability as well
as bacterial resistance. A proper drug delivery system can circumvent these drawbacks. The liposome can prove to be a big stride towards abolishment of these drawbacks. The disadvantage associated with this novel delivery system should also be understood and prevented by means of proper scientific methods for a betterment of human health and society.
PERFORMANCE ENHANCEMENT OF SINGLE SLOPE SOLAR STILL USING NANOPARTICLES MIXED...antjjournal
The present paper reports on an experiment to improve the productivity of solar still using nano-particles.Solar distillation is a relatively simple treatment of brackish or impure water. In this solar energy is used to evaporate water then this vapour is condensed as pure water. This process removes salts and other impurities. Latest trend to improve the efficiency of the solar still is use of nano-particles like metal oxides. These particles increase surface area of absorption to solar radiation. In this work the Al2O3 nanoparticles
mixed black paint is used to enhance the productivity of solar still. The solar radiations are transmitted through the glass cover and captured by a black painted inner bottom surface of the solar still. Water absorbs the heat and is converted into vapour within the chamber of the solar still.Single slop solar
still is used from past decades but in this study effect of nano-particles on productivity of solar still is
analyzed. Experimental work is performed for the single slope solar still (SS-SS) under climatic conditions
of Jaipur. The use of the nano-particles mixed with black paint increases the temperature of the solar still
basin. The productivity and efficiency of solar still at water depth 0.01 m with nano-particles are 3.48 litre
and 38.65% respectively which are maximum values compared to water depths 0.02 m and 0.03 m. Results
of the study gives 38.09% increment in productivity and 12.18% increment in thermal efficiency when
nano-particles of size 50 nm to 100 nm mixed black paint used at water depth .01 m. To check the
significance of difference in productivity of solar still with and without nano-particle mixed black paint, a
paired t-Test is performed which is conforms that the productivity enhancement due to nano-particle mixed
black paint is significant at 95% confidence interval.
MODELING OF MANUFACTURING OF A FIELDEFFECT TRANSISTOR TO DETERMINE CONDITIONS...antjjournal
In this paper we introduce an approach to model technological process of manufacture of a field-effect
heterotransistor. The modeling gives us possibility to optimize the technological process to decrease length
of channel by using mechanical stress. As accompanying results of the decreasing one can find decreasing
of thickness of the heterotransistors and increasing of their density, which were comprised in integrated
circuits.
OPTICAL BEHAVIOUR OF SYNTHESIZED ZNO NANOTABLETS AND ITS TRANSFORMED NANORODS...antjjournal
We are reporting the preparation of ZnO nanotablets at relatively low temperature (1500C) using zinc acetate [Zn(Ac)2], NaOH, cetyltrimethylammonium bromide (CTAB) by solvothermal method. By adjusting
the molar ratio of the reactants we obtained nanorods and we also obtained the variation of the dimension
of the nanorods using hydrazine hydrate as capping reagent. The prepared samples were morphologically
recognized as well crystallized. The average diameter of the ZnO nanotablets were ranging from 500 to 600 nm and the average thickness of the nanotablets were ranging from 85 to 90 nm. The length of ZnO nanorods were ranging from 300 to several micrometers and breadth of the ZnO nanorods were ranging from 80 to 160 nm. The optical properties of the prepared materials have also been studied with the exhibition of its interesting behavior.
GDG Cloud Southlake #33: Boule & Rebala: Effective AppSec in SDLC using Deplo...James Anderson
Effective Application Security in Software Delivery lifecycle using Deployment Firewall and DBOM
The modern software delivery process (or the CI/CD process) includes many tools, distributed teams, open-source code, and cloud platforms. Constant focus on speed to release software to market, along with the traditional slow and manual security checks has caused gaps in continuous security as an important piece in the software supply chain. Today organizations feel more susceptible to external and internal cyber threats due to the vast attack surface in their applications supply chain and the lack of end-to-end governance and risk management.
The software team must secure its software delivery process to avoid vulnerability and security breaches. This needs to be achieved with existing tool chains and without extensive rework of the delivery processes. This talk will present strategies and techniques for providing visibility into the true risk of the existing vulnerabilities, preventing the introduction of security issues in the software, resolving vulnerabilities in production environments quickly, and capturing the deployment bill of materials (DBOM).
Speakers:
Bob Boule
Robert Boule is a technology enthusiast with PASSION for technology and making things work along with a knack for helping others understand how things work. He comes with around 20 years of solution engineering experience in application security, software continuous delivery, and SaaS platforms. He is known for his dynamic presentations in CI/CD and application security integrated in software delivery lifecycle.
Gopinath Rebala
Gopinath Rebala is the CTO of OpsMx, where he has overall responsibility for the machine learning and data processing architectures for Secure Software Delivery. Gopi also has a strong connection with our customers, leading design and architecture for strategic implementations. Gopi is a frequent speaker and well-known leader in continuous delivery and integrating security into software delivery.
Software Delivery At the Speed of AI: Inflectra Invests In AI-Powered QualityInflectra
In this insightful webinar, Inflectra explores how artificial intelligence (AI) is transforming software development and testing. Discover how AI-powered tools are revolutionizing every stage of the software development lifecycle (SDLC), from design and prototyping to testing, deployment, and monitoring.
Learn about:
• The Future of Testing: How AI is shifting testing towards verification, analysis, and higher-level skills, while reducing repetitive tasks.
• Test Automation: How AI-powered test case generation, optimization, and self-healing tests are making testing more efficient and effective.
• Visual Testing: Explore the emerging capabilities of AI in visual testing and how it's set to revolutionize UI verification.
• Inflectra's AI Solutions: See demonstrations of Inflectra's cutting-edge AI tools like the ChatGPT plugin and Azure Open AI platform, designed to streamline your testing process.
Whether you're a developer, tester, or QA professional, this webinar will give you valuable insights into how AI is shaping the future of software delivery.
UiPath Test Automation using UiPath Test Suite series, part 4DianaGray10
Welcome to UiPath Test Automation using UiPath Test Suite series part 4. In this session, we will cover Test Manager overview along with SAP heatmap.
The UiPath Test Manager overview with SAP heatmap webinar offers a concise yet comprehensive exploration of the role of a Test Manager within SAP environments, coupled with the utilization of heatmaps for effective testing strategies.
Participants will gain insights into the responsibilities, challenges, and best practices associated with test management in SAP projects. Additionally, the webinar delves into the significance of heatmaps as a visual aid for identifying testing priorities, areas of risk, and resource allocation within SAP landscapes. Through this session, attendees can expect to enhance their understanding of test management principles while learning practical approaches to optimize testing processes in SAP environments using heatmap visualization techniques
What will you get from this session?
1. Insights into SAP testing best practices
2. Heatmap utilization for testing
3. Optimization of testing processes
4. Demo
Topics covered:
Execution from the test manager
Orchestrator execution result
Defect reporting
SAP heatmap example with demo
Speaker:
Deepak Rai, Automation Practice Lead, Boundaryless Group and UiPath MVP
Epistemic Interaction - tuning interfaces to provide information for AI supportAlan Dix
Paper presented at SYNERGY workshop at AVI 2024, Genoa, Italy. 3rd June 2024
https://alandix.com/academic/papers/synergy2024-epistemic/
As machine learning integrates deeper into human-computer interactions, the concept of epistemic interaction emerges, aiming to refine these interactions to enhance system adaptability. This approach encourages minor, intentional adjustments in user behaviour to enrich the data available for system learning. This paper introduces epistemic interaction within the context of human-system communication, illustrating how deliberate interaction design can improve system understanding and adaptation. Through concrete examples, we demonstrate the potential of epistemic interaction to significantly advance human-computer interaction by leveraging intuitive human communication strategies to inform system design and functionality, offering a novel pathway for enriching user-system engagements.
Connector Corner: Automate dynamic content and events by pushing a buttonDianaGray10
Here is something new! In our next Connector Corner webinar, we will demonstrate how you can use a single workflow to:
Create a campaign using Mailchimp with merge tags/fields
Send an interactive Slack channel message (using buttons)
Have the message received by managers and peers along with a test email for review
But there’s more:
In a second workflow supporting the same use case, you’ll see:
Your campaign sent to target colleagues for approval
If the “Approve” button is clicked, a Jira/Zendesk ticket is created for the marketing design team
But—if the “Reject” button is pushed, colleagues will be alerted via Slack message
Join us to learn more about this new, human-in-the-loop capability, brought to you by Integration Service connectors.
And...
Speakers:
Akshay Agnihotri, Product Manager
Charlie Greenberg, Host
Neuro-symbolic is not enough, we need neuro-*semantic*Frank van Harmelen
Neuro-symbolic (NeSy) AI is on the rise. However, simply machine learning on just any symbolic structure is not sufficient to really harvest the gains of NeSy. These will only be gained when the symbolic structures have an actual semantics. I give an operational definition of semantics as “predictable inference”.
All of this illustrated with link prediction over knowledge graphs, but the argument is general.
Encryption in Microsoft 365 - ExpertsLive Netherlands 2024Albert Hoitingh
In this session I delve into the encryption technology used in Microsoft 365 and Microsoft Purview. Including the concepts of Customer Key and Double Key Encryption.
UiPath Test Automation using UiPath Test Suite series, part 3DianaGray10
Welcome to UiPath Test Automation using UiPath Test Suite series part 3. In this session, we will cover desktop automation along with UI automation.
Topics covered:
UI automation Introduction,
UI automation Sample
Desktop automation flow
Pradeep Chinnala, Senior Consultant Automation Developer @WonderBotz and UiPath MVP
Deepak Rai, Automation Practice Lead, Boundaryless Group and UiPath MVP
DevOps and Testing slides at DASA ConnectKari Kakkonen
My and Rik Marselis slides at 30.5.2024 DASA Connect conference. We discuss about what is testing, then what is agile testing and finally what is Testing in DevOps. Finally we had lovely workshop with the participants trying to find out different ways to think about quality and testing in different parts of the DevOps infinity loop.
Accelerate your Kubernetes clusters with Varnish CachingThijs Feryn
A presentation about the usage and availability of Varnish on Kubernetes. This talk explores the capabilities of Varnish caching and shows how to use the Varnish Helm chart to deploy it to Kubernetes.
This presentation was delivered at K8SUG Singapore. See https://feryn.eu/presentations/accelerate-your-kubernetes-clusters-with-varnish-caching-k8sug-singapore-28-2024 for more details.
Accelerate your Kubernetes clusters with Varnish Caching
On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work a Single-Stage Multi-path Operational Amplifier, To Increase their Density
1. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 4, No.2, June 2018
DOI: 10.5121/antj.2018.4201 1
ON OPTIMIZATION OF MANUFACTURING OF
FIELD EFFECT HETEROTRANSISTORS
FRAMEWORK A SINGLE STAGE MULTIPATH
OPERATIONAL AMPLIFIER, TO INCREASE
THEIR DENSITY
E.L. Pankratov
Nizhny Novgorod State University,
23 Gagarin avenue, Nizhny Novgorod, 603950, Russia
ABSTRACT
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path
operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure
with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
KEYWORDS
field-effect heterotransistors; single-stage multi-path operational amplifier; optimization of manufacturing.
1. INTRODUCTION
In the present time it is attracted an interest increasing of performance of elements integrated
circuits and increasing of their density. At the same time dimensions of these elements decreases
with decreasing of their density. Dimensions of elements of integrated circuit could be decreases
by manufacturing of them in thin-film heterostructures [1-4]. As an alternative approach for the
decreasing one can use laser and microwave types annealing [5-7]. Using these types of annealing
leads to generation inhomogeneous distribution of temperature. Temperature dependence of
dopant diffusion coefficient and other parameters of process leads to their inhomogeneity due to
inhomogeneity of temperature. The inhomogeneity could leads to decreasing of dimensions of
elements of integrated circuits. Properties of electronic materials could be also changes by using
radiation processing of these materials [8,9].
In this paper we consider a single-stage multi-path operational amplifier described in Ref. [10]
(see Fig.1). We assume, that element of the considered circuit has been manufactured in
heterostructure from Fig. 1. The heterostructure includes into itself a substrate and an epitaxial
layer. The epitaxial layer consist of a main material and several sections manufactured by using
another materials in the main material. The sections should be doped for generation into them
2. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 4, No.2, June 2018
2
required type of conductivity (n or p). Most simple types of doping are diffusion or ion
implantation in the case. Main aim of the paper we analyzing of redistribution of dopant and
radiation defects during the doping to formulate conditions to decrease of dimensions of the
considered circuit.
Fig. 1a. Circuit of a pass transistor single-stage multi-path operational amplifier [10]
Fig. 1b. Heterostructure with substrate and epitaxial layer. The epitaxial layer in-cludes into itself several
sections
3. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 4, No.2, June 2018
3
2. METHOD OF SOLUTION
We calculate distribution of concentration of dopant in space and time by solving the following
equation
( ) =
t
tzyxC
∂
∂ ,,,
( ) ( ) ( )
+
+
=
z
tzyxC
D
zy
tzyxC
D
yx
tzyxC
D
x
CCC
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,,,,,,,,,
(1)
Boundary and initial conditions for the equation could be written as
( ) 0
,,,
0
=
∂
∂
=x
x
tzyxC
,
( ) 0
,,,
=
∂
∂
= xLx
x
tzyxC
,
( ) 0
,,,
0
=
∂
∂
=y
y
tzyxC
, (2)
( ) 0
,,,
=
∂
∂
= yLx
y
tzyxC
,
( ) 0
,,,
0
=
∂
∂
=z
z
tzyxC
,
( ) 0
,,,
=
∂
∂
= zLx
z
tzyxC
,
C (x,y,z,0)=f (x,y,z).
Function C(x,y,z,t) describes distribution of concentration of dopant in space and time; T is the
temperature of annealing; DС is the dopant diffusion coefficient. Dopant diffusion coefficient
could be varying with changing of materials, speed of heating and cooling of heterostructure.
Approximation of dopant diffusion coefficient could be written as [9,11,12]
( ) ( )
( )
( ) ( )
( )
++
+= 2*
2
2*1
,,,,,,
1
,,,
,,,
1,,,
V
tzyxV
V
tzyxV
TzyxP
tzyxC
TzyxDD LC ςςξ γ
γ
. (3)
Here DL (x,y,z,T) is the dependence of dopant diffusion coefficient on coordinate and temperature;
P (x,y,z,T) is the dependence of limit of solubility of dopant diffusion coefficient on coordinate
and temperature; parameter γ should be integer in the interval γ ∈[1,3] [9]; V (x,y,z,t) is the
dependence of distribution of concentration of radiation vacancies on coordinate and time with
the equilibrium distribution V*
. Dependence of dopant diffusion coefficient on dopant
concentration has been discussed in details in [9]. It should be noted, that using infusion of dopant
did not leads to generation radiation defects, i.e. ζ1= ζ2= 0. We determine distributions of
concentrations of point defects on space and time by solving the following system of equations
[11,12]
4. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 4, No.2, June 2018
4
( ) ( ) ( ) ( ) ( ) +
∂
∂
∂
∂
+
∂
∂
∂
∂
=
∂
∂
y
tzyxI
TzyxD
yx
tzyxI
TzyxD
xt
tzyxI
II
,,,
,,,
,,,
,,,
,,,
( ) ( ) ( ) ( ) ( )−−
∂
∂
∂
∂
+ tzyxVtzyxITzyxk
z
tzyxI
TzyxD
z
VII ,,,,,,,,,
,,,
,,, ,
( ) ( )tzyxITzyxk II ,,,,,, 2
,− (4)
( ) ( ) ( ) ( ) ( ) +
∂
∂
∂
∂
+
∂
∂
∂
∂
=
∂
∂
y
tzyxV
TzyxD
yx
tzyxV
TzyxD
xt
tzyxV
VV
,,,
,,,
,,,
,,,
,,,
( ) ( ) ( ) ( ) ( )−−
∂
∂
∂
∂
+ tzyxVtzyxITzyxk
z
tzyxV
TzyxD
z
VIV ,,,,,,,,,
,,,
,,, ,
( ) ( )tzyxVTzyxk VV ,,,,,, 2
,−
Boundary and initial conditions for these equations could be written as
( ) 0
,,,
0
=
∂
∂
=x
x
tzyxρ
,
( ) 0
,,,
=
∂
∂
= xLx
x
tzyxρ
,
( ) 0
,,,
0
=
∂
∂
=y
y
tzyxρ
,
( ) 0
,,,
=
∂
∂
= yLy
y
tzyxρ
,
( ) 0
,,,
0
=
∂
∂
=z
z
tzyxρ
,
( ) 0
,,,
=
∂
∂
= zLz
z
tzyxρ
, ρ (x,y,z,0)=fρ (x,y,z). (5)
Here ρ =I,V; function I (x,y,z,t) describe distribution of concentration of radiation interstitials in
space and time; function Dρ(x,y,z,T) describe distribution of diffusion coefficients of radiation
interstitials and vacancies on coordinate and temperature; squared terms on concentration of
defects (i.e. V2
(x,y,z,t) and I2
(x,y,z,t)) describe dependences of parameter of generation of
divacancies and diinterstitials on coordinate and temperature, respectively; function kI,V(x,y,z,T)
describe distribution of the parameter of recombination of point radiation defects on coordinate
and temperature; function kρ,ρ(x,y,z,T) describe distribution of the parameters of generation of
simplest complexes of point radiation defects on coordinate and temperature.
We calculate dependences of concentrations of divacancies ΦV (x,y,z,t) and diinterstitials ΦI
(x,y,z,t) on coordinate and temperature by solving the following system of equations [11,12]
5. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 4, No.2, June 2018
5
( ) ( ) ( ) ( ) ( ) +
Φ
+
Φ
=
Φ
ΦΦ
y
tzyx
TzyxD
yx
tzyx
TzyxD
xt
tzyx III
II
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,,,
,,,
,,,
,,,
,,,
( ) ( ) ( ) ( ) ( ) ( )tzyxITzyxktzyxITzyxk
z
tzyx
TzyxD
z
III
I
I
,,,,,,,,,,,,
,,,
,,, 2
, −+
Φ
+ Φ
∂
∂
∂
∂
(6)
( ) ( ) ( ) ( ) ( ) +
Φ
+
Φ
=
Φ
ΦΦ
y
tzyx
TzyxD
yx
tzyx
TzyxD
xt
tzyx VVV
VV
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,,,
,,,
,,,
,,,
,,,
( ) ( ) ( ) ( ) ( ) ( )tzyxVTzyxktzyxVTzyxk
z
tzyx
TzyxD
z
VVV
V
V
,,,,,,,,,,,,
,,,
,,, 2
, −+
Φ
+ Φ
∂
∂
∂
∂
Boundary and initial conditions for these equations could be written as
( )
0
,,,
0
=
∂
Φ∂
=x
x
tzyxρ
,
( )
0
,,,
=
∂
Φ∂
= xLx
x
tzyxρ
,
( )
0
,,,
0
=
∂
Φ∂
=y
y
tzyxρ
,
( )
0
,,,
=
∂
Φ∂
= yLy
y
tzyxρ
,
( )
0
,,,
0
=
∂
Φ∂
=z
z
tzyxρ
,
( )
0
,,,
=
∂
Φ∂
= zLz
z
tzyxρ
, (7)
ΦI (x,y,z,0)=fΦI (x,y,z), ΦV (x,y,z,0)=fΦV (x,y,z).
Functions DΦρ(x,y,z,T) describe dependences diffusion coefficients of complexes of radiation
defects on coordinate and temperature; functions kρ(x,y,z,T) describe dependences of parameters
of decay of complexes of radiation defects on coordinate and temperature.
We calculate distributions of concentrations of dopant and radiation defects in space and time by
using method of averaging of function corrections [13] with decreased quantity of iteration steps
[14]. First of all we used solutions of linear Eqs. (1), (4) and (6) and with averaged values of
diffusion coefficients D0L, D0I, D0V, D0ΦI, D0ΦV as initial-order approximations of the considered
concentrations. The solutions could be written as
( ) ( ) ( ) ( ) ( )∑+=
∞
=1
0
1
2
,,,
n
nCnnnnC
zyxzyx
C
tezcycxcF
LLLLLL
F
tzyxC ,
( ) ( ) ( ) ( ) ( )∑+=
∞
=1
0
1
2
,,,
n
nInnnnI
zyxzyx
I
tezcycxcF
LLLLLL
F
tzyxI ,
6. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 4, No.2, June 2018
6
( ) ( ) ( ) ( ) ( )∑+=
∞
=1
0
1
2
,,,
n
nVnnnnC
zyxzyx
C
tezcycxcF
LLLLLL
F
tzyxV ,
( ) ( ) ( ) ( ) ( )∑+=Φ
∞
=
ΦΦ
Φ
1
0
1
2
,,,
n
nnnnn
zyxzyx
I tezcycxcF
LLLLLL
F
tzyx II
I
,
( ) ( ) ( ) ( ) ( )∑+=Φ
∞
=
ΦΦ
Φ
1
0
1
2
,,,
n
nnnnn
zyxzyx
V tezcycxcF
LLLLLL
F
tzyx VV
V
.
Here ( )
++−= 2220
22 111
exp
zyx
n
LLL
tDnte ρρ π ,
( ) ( ) ( ) ( )∫ ∫ ∫=
x y zL L L
nnnn udvdwdwvufvcvcucF
0 0 0
,,ρρ , cn(χ) = cos (π n χ/Lχ).
Approximations of the considered concentrations with higher orders (second, third, ...) have been
calculated framework standard iterative procedure [13,14]. To use the procedure we shall replace
the functions C(x,y,z,t), I(x,y,z,t), V(x,y,z,t), ΦI(x,y, z,t), ΦV(x,y,z,t) in the right sides of the Eqs.
(1), (4) and (6) on the following sums αnρ +ρ n-1(x,y,z,t). Equations for concentrations for
considered concentrations for the second-order could be written as
( ) ( ) ( )
( )
( )[ ]
( )
×
+
+
++=
∗∗
TzyxP
tzyxC
V
tzyxV
V
tzyxV
xt
tzyxC C
,,,
,,,
1
,,,,,,
1
,,, 12
2
2
21
2
γ
γ
α
ξςς
∂
∂
∂
∂
( ) ( ) ( ) ( ) ( )
( )
×
+++
× ∗∗ 2
2
21
1 ,,,,,,
1,,,
,,,
,,,
V
tzyxV
V
tzyxV
TzyxD
yx
tzyxC
TzyxD LL ςς
∂
∂
∂
∂
( )[ ]
( )
( ) ( ) ( )
×+
+
+×
z
tzyxC
TzyxD
zy
tzyxC
TzyxP
tzyxC
L
C
∂
∂
∂
∂
∂
∂α
ξ γ
γ
,,,
,,,
,,,
,,,
,,,
1 1112
( ) ( )
( )
( )[ ]
( )
+
+
++× ∗∗
TzyxP
tzyxC
V
tzyxV
V
tzyxV C
,,,
,,,
1
,,,,,,
1 12
2
2
21 γ
γ
α
ξςς (8)
( ) ( ) ( ) ( ) ( ) +
+
=
y
tzyxI
TzyxD
yx
tzyxI
TzyxD
xt
tzyxI
II
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,,,
,,,
,,,
,,,
,,, 112
7. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 4, No.2, June 2018
7
( ) ( ) ( )[ ] ( )[ ]×++−
+ tzyxVtzyxI
z
tzyxI
TzyxD
z
VII
,,,,,,
,,,
,,, 1212
1
αα
∂
∂
∂
∂
( ) ( ) ( )[ ]2
12,,
,,,,,,,,, tzyxITzyxkTzyxk IIIVI
+−× α (9)
( ) ( ) ( ) ( ) ( ) +
+
=
y
tzyxV
TzyxD
yx
tzyxV
TzyxD
xt
tzyxV
VV
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,,,
,,,
,,,
,,,
,,, 112
( ) ( ) ( )[ ] ( )[ ]×++−
+ tzyxVtzyxI
z
tzyxV
TzyxD
z
VIV
,,,,,,
,,,
,,, 1212
1
αα
∂
∂
∂
∂
( ) ( ) ( )[ ]2
12,,
,,,,,,,,, tzyxVTzyxkTzyxk VVVVI
+−× α
( ) ( ) ( ) ( )
×+
Φ
=
Φ
ΦΦ
TzyxD
yx
tzyx
TzyxD
xt
tzyx
II
II
,,,
,,,
,,,
,,, 12
∂
∂
∂
∂
∂
∂
∂
∂
( ) ( ) ( ) ( )×+
Φ
+
Φ
× Φ
Tzyxk
z
tzyx
TzyxD
zy
tzyx
II
II
I
,,,
,,,
,,,
,,,
,
11
∂
∂
∂
∂
∂
∂
( ) ( ) ( )tzyxITzyxktzyxI I
,,,,,,,,,2
−× (10)
( ) ( ) ( ) ( )
×+
Φ
=
Φ
ΦΦ
TzyxD
yx
tzyx
TzyxD
xt
tzyx
VV
VV
,,,
,,,
,,,
,,, 12
∂
∂
∂
∂
∂
∂
∂
∂
( ) ( ) ( ) ( )×+
Φ
+
Φ
× Φ
Tzyxk
z
tzyx
TzyxD
zy
tzyx
VV
VI
V
,,,
,,,
,,,
,,,
,
11
∂
∂
∂
∂
∂
∂
( ) ( ) ( )tzyxVTzyxktzyxV V
,,,,,,,,,2
−× .
The second-order approximations of concentrations of dopant and radiation defects could be
obtained in the final form by integration of the left and right sides of Eqs.(8)-(10)
( ) ( ) ( )
( )
( )[ ]
( )
∫ ×
+
+
++=
∗∗
t
C
TzyxP
zyxC
V
zyxV
V
zyxV
x
tzyxC
0
12
2
2
212
,,,
,,,
1
,,,,,,
1,,, γ
γ
τα
ξ
τ
ς
τ
ς
∂
∂
8. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 4, No.2, June 2018
8
( ) ( ) ( ) ( )
( )
∫ ×
+++
×
∗∗
t
L
V
zyxV
V
zyxV
y
d
x
zyxC
TzyxD
0
2
2
21
1 ,,,,,,
1
,,,
,,,
τ
ς
τ
ς
∂
∂
τ
∂
τ∂
( ) ( )[ ]
( )
( ) ( )
∫ ×+
+
+×
t
L
C
L TzyxD
z
d
y
zyxC
TzyxP
zyxC
TzyxD
0
112
,,,
,,,
,,,
,,,
1,,,
∂
∂
τ
∂
τ∂τα
ξ γ
γ
( ) ( )
( )
( )[ ]
( )
( ) +
+
+
++× ∗∗
τ
∂
τ∂τα
ξ
τ
ς
τ
ς γ
γ
d
z
zyxC
TzyxP
zyxC
V
zyxV
V
zyxV C ,,,
,,,
,,,
1
,,,,,,
1 112
2
2
21
( )zyxfC ,,+ (8a)
( ) ( ) ( ) ( )
∫ ×+
∫=
t
I
t
I TzyxD
y
d
x
zyxI
TzyxD
x
tzyxI
00
1
2 ,,,
,,,
,,,,,,
∂
∂
τ
∂
τ∂
∂
∂
( ) ( ) ( ) ( ) ×∫−
∫+
×
t
II
t
I Tzyxkd
z
zyxI
TzyxD
z
d
y
zyxI
0
,
0
11
,,,
,,,
,,,
,,,
τ
∂
τ∂
∂
∂
τ
∂
τ∂
( )[ ] ( ) ( ) ( )[ ]×∫ +−++×
t
IVIII zyxITzyxkzyxfdzyxI
0
12,
2
12 ,,,,,,,,,,, ταττα
( )[ ] ττα dzyxVV ,,,12 +× (9a)
( ) ( ) ( ) ( )
∫ ×+
∫=
t
V
t
V TzyxD
y
d
x
zyxV
TzyxD
x
tzyxV
00
1
2 ,,,
,,,
,,,,,,
∂
∂
τ
∂
τ∂
∂
∂
( ) ( ) ( ) ( ) ×∫−
∫+
×
t
VV
t
V Tzyxkd
z
zyxV
TzyxD
z
d
y
zyxV
0
,
0
11
,,,
,,,
,,,
,,,
τ
∂
τ∂
∂
∂
τ
∂
τ∂
( )[ ] ( ) ( ) ( )[ ]×∫ +−++×
t
IVIVI zyxITzyxkzyxfdzyxV
0
12,
2
12 ,,,,,,,,,,, ταττα
( )[ ] ττα dzyxVV ,,,12 +×
( ) ( ) ( ) ( )
∫ ×+
∫
Φ
=Φ ΦΦ
tt
I
I TzyxD
y
d
x
zyx
TzyxD
x
tzyx II
00
1
2 ,,,
,,,
,,,,,,
∂
∂
τ
∂
τ∂
∂
∂
9. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 4, No.2, June 2018
9
( ) ( ) ( ) ( ) ×∫+
∫
Φ
+
Φ
× Φ
t
II
t
II
Tzyxkd
z
zyx
TzyxD
z
d
y
zyx
I
0
,
0
11
,,,
,,,
,,,
,,,
τ
∂
τ∂
∂
∂
τ
∂
τ∂
( ) ( ) ( ) ( )zyxfdzyxITzyxkdzyxI I
t
I ,,,,,,,,,,,
0
2
Φ+∫−× ττττ (10a)
( ) ( ) ( ) ( )
∫ ×+
∫
Φ
=Φ ΦΦ
tt
V
V TzyxD
y
d
x
zyx
TzyxD
x
tzyx VV
00
1
2 ,,,
,,,
,,,,,,
∂
∂
τ
∂
τ∂
∂
∂
( ) ( ) ( ) ( ) ×∫+
∫
Φ
+
Φ
× Φ
t
VV
t
VI
Tzyxkd
z
zyx
TzyxD
z
d
y
zyx
V
0
,
0
11
,,,
,,,
,,,
,,,
τ
∂
τ∂
∂
∂
τ
∂
τ∂
( ) ( ) ( ) ( )zyxfdzyxVTzyxkdzyxV V
t
V ,,,,,,,,,,,
0
2
Φ+∫−× ττττ
We calculate average values of the second-orders approximations of concentrations of dopant and
radiation defects by using the following standard relations [13,14]
( ) ( )[ ]∫ ∫ ∫ ∫ −
Θ
=
Θ
0 0 0 0
122 ,,,,,,
1 x y zL L L
zyx
tdxdydzdtzyxtzyx
LLL
ρρα ρ . (11)
Using the relation (11) with account relations (8a)-(10a) leads to the following average values
α2ρ
( )∫ ∫ ∫=
x y zL L L
C
zyx
С xdydzdzyxf
LLL 0 0 0
2 ,,
1
α , (12)
( ) [{ −+−−+++= 112010200
2
0021001
00
2 41
2
1
IVIIIVVIIIVVIIIV
II
I AAAAAAA
A
ααα
( )
00
0021001
2
1
0 0 0 2
1
,,
1
II
IVVIIIV
L L L
I
zyx A
AAA
xdydzdzyxf
LLL
x y z α+++
−
∫ ∫ ∫− (13a)
( )
4
313
4
2
3
4
2
4
4
42
1
B
AB
A
ByB
yB
AB
B
V
+
−
−
+−
+
=α . (13b)
10. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 4, No.2, June 2018
10
Here
( ) ( ) ( ) ( )∫ ∫ ∫ ∫−Θ
Θ
=
Θ
0 0 0 0
11, ,,,,,,,,,
1 x y zL L L
ji
ba
zyx
abij tdxdydzdtzyxVtzyxITzyxkt
LLL
A ,
( )2
0000
2
00
2
00
2
004 2 VVIIIVIVIV AAAAAB −−= ,
−++= 2
001000
3
0001
2
00003 IVIIIVIVIVIVIV AAAAAAAB
( ) ( ) ( )[ ]−++−+++−− 121224 10100010010000010000
2
00 VVIVIIIIIVIVIVIVVVIIIV AAAAAAAAAAA
2
000100
2
000010 24 IVIVIVIVIIIV AAAAAA +− ,
( ){ ×++++= 00
2
01
2
00
2
1001
2
002 1 IVIVIVIIIVIV AAAAAAB
( )
×−−−−++×
zyx
IIIVIIIIIVIIIVIVIVIVIV
LLL
AAAAAAAAAAA
1
442 2011000010100001000000
( ) ( ) ([{ ++−+++
∫ ∫ ∫× 12122,, 10001001000001
0 0 0
IVIIIIIVIVIVIV
L L L
I AAAAAAAxdydzdzyxf
x y z
)] ( ) ( ) (
−−∫ ∫ ∫+++++ 2000
0 0 0
100101
2
10 2,,
2
12 VVII
L L L
V
zyx
IIIVIVVV AAxdydzdzyxf
LLL
AAAA
x y z
) ( )] ( ) ([ ++−++++++− 122121 1000000110010010010111 IVIIIVIVIIIVIVIIIVIVIV AAAAAAAAAAA
)]}10VVA+ ,
( ) ( )
×∫ ∫ ∫−−++=
x y zL L L
I
x
IVIIIVIVIV xdydzdzyxf
L
AAAAAB
0 0 0
11
2
100101001 ,,
1
812
( )−−++++
−× 00101000010000
2
0100010020 4
1
IIIVIIIVIVIVIVIVIIIVIVII
zy
AAAAAAAAAAAA
LL
11. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 4, No.2, June 2018
11
( ) ( ) ( )
+−−+++∫ ∫ ∫− 112000100101
0 0 0
00
21,,
2
2 IVVVIIIIIVIV
L L L
I
zyx
II
AAAAAAxdydzdzyxf
LLL
A x y z
( )] ( ) ( )[ ]0001001010100100100101 212121 IVIVIIVVIVIIIVIVIIIVIV AAAAAAAAAAA +++−+++++
,
( ) ( +++
−∫ ∫ ∫+= 1001
2
0111
0 0 0
20
2
01000 ,,
1
4 IIIVIVIV
L L L
I
zyx
IIIVII AAAAxdydzdzyxf
LLL
AAAB
x y z
) ( ) ( ) ( )
+−−+++∫ ∫ ∫−+ 112000100101
0 0 0
002
21,,
2
1 IVVVIIIIIVIV
L L L
V
zyx
II
AAAAAAxdydzdzyxf
LLL
A x y z
( )]2
100101 1 IIIVIV AAA +++ ,
6
23 323 32 B
qpqqpqy +++−−+= ,
( )×−= 031 82 BBBq
( )
8
4
21648
2
1
2
320
3
22 BBBBBB −−
++× , ( )[ ] 722823 2
2031 BBBBp −−= ,
2
2
3 48 BByA −+= ,
( ) ( ) ( ) +∫ ∫ ∫ ∫−Θ
Θ
−=
Θ
Φ
0 0 0 0
202 ,,,,,,
1 x y z
I
L L L
I
zyx
II tdxdydzdtzyxITzyxkt
LLL
Aα
( )∫ ∫ ∫+ Φ
x y zL L L
I
zyx
xdydzdzyxf
LLL 0 0 0
,,
1
(14)
( ) ( ) ( ) +∫ ∫ ∫ ∫−Θ
Θ
−=
Θ
Φ
0 0 0 0
202 ,,,,,,
1 x y z
V
L L L
V
zyx
VV tdxdydzdtzyxVTzyxkt
LLL
Aα
( )∫ ∫ ∫+ Φ
x y zL L L
V
zyx
xdydzdzyxf
LLL 0 0 0
,,
1
.
12. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 4, No.2, June 2018
12
Now one can obtain equation for parameter α2C. Form of the equation depends on of parameter γ.
Analysis of distributions of concentrations of dopant and radiation defects in space and time has
been done by using the second-order approximations by using of modified method of averaging
of function corrections (with decreased quantity of iterative steps) of these concentrations. The
considered approximation is usually enough good approximation to analyze qualitatively the
considered concentration and obtain some quantitative results. The analytical calculation results
have been checked comparison of the analytical results with results of numerical simulation.
3. DISCUSSION
Main aim of the section is analysis of distribution of concentration of dopant in space and time in
the considered heterostructure during annealing. Figs. 2 shows distributions of concentrations of
dopants in space, which where infused or implanted in the considered epitaxial layer (see Fig. 2a
and Fig. 2b, respectively) at the same values of annealing time (the same framework each figure).
Larger numbers of curves corresponds to larger difference between dopant diffusion coefficients
in epitaxial layer and substrate. The figures show that inhomogeneity could leads to increasing of
absolute value of gradient of concentration of dopant (i.e. one can obtain increasing sharpness of
the end of doped structure). The increasing leads to decreasing dimensions of the considered
transistors and increasing of homogeneity of concentration of dopant in doped areas.
We choose optimal value annealing time as compromise between increasing of homogeneity of
dopant concentration in doped area and increasing of sharpness of the concentration in
neighborhood of interface between substrate and epitaxial layer (see Fig. 3a for diffusion doping
of materials and Fig. 3b for ion doping of materials) [15-20]. Framework the criteria one shall
approximate real distributions of concentration of dopant by ideal step-wise distribution ψ (x,y,z).
compromise value of annealing time by minimization of the following mean-squared error.
Fig.2a. Distributions of infused dopant concentration in the considered heterostructure. Larger numbers of
curves corresponds to larger difference between dopant diffusion coefficients in epitaxial layer and
substrate
13. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 4, No.2, June 2018
13
Fig.2b. Distributions of implanted dopant concentration in the considered heterostructure. Larger numbers
of curves corresponds to larger difference between dopant diffusion coefficients in epitaxial layer and
substrate
Fig. 3a. Dependences of distributions of concentration of infused dopant on coordinate. Curve 1 is
idealized distribution of dopant. Curves 2-4 are real dependences of concentrations dopant on coordinate
for different values of annealing time. Increasing of number of curve corresponds to increasing of
annealing time
14. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 4, No.2, June 2018
14
Fig.3b. Dependences of distributions of concentration of implanted dopant on coordinate. Curve 1 is
idealized distribution of dopant. Curves 2-4 are real dependences of concentrations dopant on coordinate
for different values of annealing time. Increasing of number of curve corresponds to increasing of
annealing time
Fig.4a. Dependences of dimensionless optimized annealing time of infused dopant on several parameters.
Curve 1 describes dependence of dimensionless optimized annealing time on the value a/L and ξ = γ = 0 for
equal to each other values of dopant diffusion coefficient in all parts of heterostructure. Curve 2 is the
dependence of dimensionless optimal annealing time on value of parameter ε for a/L=1/2 and ξ = γ = 0.
Curve 3 is the dependence of dimensionless optimal annealing time on value of parameter ξ for a/L =1/2
and ε = γ = 0. Curve 4 is the dependence of dimensionless optimal annealing time on value of parameter γ
for a/L=1/2 and ε = ξ = 0
15. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 4, No.2, June 2018
15
( ) ( )[ ]∫ ∫ ∫ −Θ=
x y zL L L
zyx
xdydzdzyxzyxC
LLL
U
0 0 0
,,,,,
1
ψ . (15)
Fig.4b. Dependences of dimensionless optimized annealing time of implanted dopant on several
parameters. Curve 1 describes dependence of dimensionless optimized annealing time on the value a/L and
ξ = γ = 0 for equal to each other values of dopant diffusion coefficient in all parts of heterostructure.Curve
2 is the dependence of dimensionless optimal annealing time on value of parameter ε for a/L=1/2 and ξ = γ
= 0. Curve 3 is the dependence of dimensionless optimal annealing time on value of parameter ξ for a/L
=1/2 and ε = γ = 0. Curve 4 is the dependence of dimensionless optimal annealing time on value of
parameter γ for a/L=1/2 and ε = ξ = 0
We present optimized annealing time on Figs. 4 (Fig. 4a for diffusion type of doping and Fig. 4b
for ion type of doping). It is known, that radiation defects should be annealed after ion
implantation. The annealing leads to spreading of distribution of concentration of dopant. The
ideal spreading leads to achievement of nearest interfaces between materials of heterostructure. If
dopant has no time for the achievement during the annealing, it is attracted an interest additional
annealing of dopant. The situation leads to smaller value of optimal annealing time of implanted
dopant in comparison with diffusion one. At the same time it should be noted, that ion type of
doping leads to decreasing of mismatch-induced stress in heterostructure [21].
4. CONCLUSION
We consider an approach for increasing density of field-effect heterotransistors in a single-stage
multi-path operational amplifier. At the same time one can obtain decreasing of dimensions of the
above transistors. Dimensions of the elements could be decreased by manufacturing of these
elements in a heterostructure with specific structure. The manufacturing is doing by doping of
required areas of the heterostructure by diffusion or ion implantation with future optimization of
annealing of dopant and/or radiation defects.
16. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 4, No.2, June 2018
16
REFERENCES
[1] G. Volovich. Modern Electronics. Issue 2. P. 10-17 (2006).
[2] A. Kerentsev, V. Lanin, Power Electronics. Issue 1. P. 34 (2008).
[3] A.O. Ageev, A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudrik, P.M.
Litvin, V.V. Milenin, A.V. Sachenko. Semiconductors. Vol. 43 (7). P. 897-903 (2009).
[4] N.I. Volokobinskaya, I.N. Komarov, T.V. Matioukhina, V.I. Rechetniko, A.A. Rush, I.V. Falina, A.S.
Yastrebov. Semiconductors. Vol. 35 (8). P. 1013-1017 (2001).
[5] K.K. Ong, K.L. Pey, P.S. Lee, A.T.S. Wee, X.C. Wang, Y.F. Chong, Appl. Phys. Lett. 89 (17),
172111-172114 (2006).
[6] H.T. Wang, L.S. Tan, E. F. Chor. J. Appl. Phys. 98 (9), 094901-094905 (2006).
[7] Yu.V. Bykov, A.G. Yeremeev, N.A. Zharova, I.V. Plotnikov, K.I. Rybakov, M.N. Drozdov, Yu.N.
Drozdov, V.D. Skupov. Radiophysics and Quantum Electronics. Vol. 43 (3). P. 836-843 (2003).
[8] V.V. Kozlivsky. Modification of semiconductors by proton beams (Nauka, Sant-Peterburg, 2003, in
Russian).
[9] V.L. Vinetskiy, G.A. Kholodar', Radiative physics of semiconductors. ("Naukova Dumka", Kiev,
1979, in Russian).
[10] M. Yavari, T. Moosazadeh. Analog. Integr. Circ. Sig. Process. Vol. 79. P. 589-598 (2014).
[11] Z.Yu. Gotra. Technology of microelectronic devices (Radio and communication, Moscow, 1991).
[12] P.M. Fahey, P.B. Griffin, J.D. Plummer. Rev. Mod. Phys. 1989. V. 61. № 2. P. 289-388.
[13] Yu.D. Sokolov. Applied Mechanics. Vol. 1 (1). P. 23-35 (1955).
[14] E.L. Pankratov. The European Physical Journal B. 2007. V. 57, №3. P. 251-256.
[15] E.L. Pankratov. Russian Microelectronics. 2007. V.36 (1). P. 33-39.
[16] E.L. Pankratov. Int. J. Nanoscience. Vol. 7 (4-5). P. 187–197 (2008).
[17] E.L. Pankratov. J. Comp. Theor. Nanoscience. Vol. 7 (1). P. 289-295 (2010).
[18] E.L. Pankratov, E.A. Bulaeva. J. Comp. Theor. Nanoscience. Vol. 10 (4). P. 888-893 (2013).
[19] E.L. Pankratov, E.A. Bulaeva. Int. J. Micro-Nano Scale Transp. Vol. 4 (1). P. 17-31 (2014).
[20] E.L. Pankratov, E.A. Bulaeva. Int. J. Nanoscience. Vol. 11 (5). P. 1250028-1250035 (2012).
[21] E.L. Pankratov, E.A. Bulaeva. J. Comp. Theor. Nanoscience. Vol. 11 (1). P. 91-101 (2014).